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2. GEMAS: The geochemical mapping of agricultural and grazing land soils of Europe

Author

Vivo B. De, Albanese S., Lima A., Cicchella D., Dinelli E., Valera P., Reimann C., Birke M., and Demetriades A.

Subjects
Heavy metals, GEMAS project, grazing land, agricultural soil, Environmental sciences, GE1-350
Abstract

The GEMAS project started in 2008 with a joint field campaign of almost all geological surveys in Europe in cooperation with some external organizations. 2211 samples of agricultural soil and 2118 samples from land under permanent grass cover were collected from a large part of Europe over a total area of about 5 million sqkm. Analysis of 53 chemical elements were carried out and The initial results indicate that nature, geology and climate are the major driving forces for the mapped distribution of element patterns at the European scale. Once completed, this project will deliver good quality and comparable exposure data of metals in agricultural and grazing land soil.

Published
2013
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31. Pouring the Remaining Melt as a Method to Reduce the Red-Zone in the Top Region of mc-Silicon Ingots

Author

Bähr, T., Ghosh, M., Hamacher, M., Kranert, C., and Reimann, C.

Subjects
Feedstock, Crystallisation, Wafering, Defect Engineering, Silicon Materials and Cells
Abstract

38th European Photovoltaic Solar Energy Conference and Exhibition; 334-338, Completing our investigations on different melt removal techniques presented at previous PVSEC we installed an appliance in our SCU-G1 furnace for pouring the impurity-enriched silicon melt at the top of the ingot at the end of crystallization. With this method any amount of silicon melt between 0 and 25% (compared to the original mass of the G1 ingot) can be removed completely within a few seconds. Thus, the top surface of the growing crystal can be freed from the impurity enriched melt immediately and completely before the end of the regular crystallization process. This can be detected by optical investigation of the ingot’s top surface. However, in all of our experiments a top red-zone of at least 1.7 cm thickness in the mc-Si ingot remained. Compared to reference ingots, where no melt was removed, no significant thickness reduction was achieved. A deeper analysis of the minority charge carrier lifetime by a diffusion model [9] revealed that, typically, the Fei content in the ingot’s top region was reduced by a factor of about 3 compared to reference ingots. Yet, this seems to be not enough to affect the thickness of the top red zone. We suppose additional contamination of the ingot via the gas phase to be a reason for this behavior.

Published
2021
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32. Influence of an Active Crystal Cooling Device on the Shape of the Phase Boundary in Mono Ingots Grown by the Czochralski Technique

Author

Mosel, F., Denisov, A.V., Hess, K., Klipp, B., Sennova, N., Kranert, C., Trempa, M., Reimann, C., and Friedrich, J.

Subjects
Feedstock, Crystallisation, Wafering, Defect Engineering, Silicon Materials and Cells
Abstract

38th European Photovoltaic Solar Energy Conference and Exhibition; 339-346, In Cz-Si the shape of the crystallization front, which is essentially controlled by the interaction of the various convection phenomena, determines the radial distribution of the crystal properties and is the subject of numerous publications. In our former investigations [1] on the limits of the pull speed in the Czochralski process, we were able to determine a clear influence of an active crystal cooling on the extent of the deflection of the phase boundary in the growing crystal. In order to investigate the influence of the crystal cooling element on the shape of the interface in more detail, two different series of crystal growth experiments were carried out and interpreted with 2D numerical simulations. For this purpose the shapes of the phase boundaries of the grown crystals were made visible by means of LPS measurements and compared with the calculated interface shapes. In one of the two series, the influence of a certain crystal cooling element in connection with the growth configuration was investigated. In the other series, the influence of different crystal cooling elements on the phase boundary was examined. Based on the heat flux balance at the crystallization front, the essential parameters for stable crystal growth conditions were evaluated. For all experiments performed, the cooling rate of the growing crystal in its growth environment were calculated from the point of view of the distribution of intrinsic defects.

Published
2021
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33. Design concepts for the Cherenkov Telescope Array CTA: an advanced facility for ground-based high-energy gamma-ray astronomy

Author

Actis, M., Agnetta, G., Aharonian, F., Akhperjanian, A., Aleksić, J., Aliu, E., Allan, D., Allekotte, I., Antico, F., Antonelli, L. A., Antoranz, P., Aravantinos, A., Arlen, T., Arnaldi, H., Artmann, S., Asano, K., Asorey, H., Bähr, J., Bais, A., Baixeras, C., Bajtlik, S., Balis, D., Bamba, A., Barbier, C., Barceló, M., Barnacka, A., Barnstedt, J., Barres de Almeida, U., Barrio, J. A., Basso, S., Bastieri, D., Bauer, C., Becerra, J., Becherini, Y., Bechtol, K., Becker, J., Beckmann, V., Bednarek, W., Behera, B., Beilicke, M., Belluso, M., Benallou, M., Benbow, W., Berdugo, J., Berger, K., Bernardino, T., Bernlöhr, K., Biland, A., Billotta, S., Bird, T., Birsin, E., Bissaldi, E., Blake, S., Blanch, O., Bobkov, A. A., Bogacz, L., Bogdan, M., Boisson, C., Boix, J., Bolmont, J., Bonanno, G., Bonardi, A., Bonev, T., Borkowski, J., Botner, O., Bottani, A., Bourgeat, M., Boutonnet, C., Bouvier, A., Brau-Nogué, S., Braun, I., Bretz, T., Briggs, M. S., Brun, P., Brunetti, L., Buckley, J. H., Bugaev, V., Bühler, R., Bulik, T., Busetto, G., Buson, S., Byrum, K., Cailles, M., Cameron, R., Canestrari, R., Cantu, S., Carmona, E., Carosi, A., Carr, J., Carton, P. H., Casiraghi, M., Castarede, H., Catalano, O., Cavazzani, S., Cazaux, S., Cerruti, B., Cerruti, M., Chadwick, P. M., Chiang, J., Chikawa, M., Cieślar, M., Ciesielska, M., Cillis, A., Clerc, C., Colin, P., Colomé, J., Compin, M., Conconi, P., Connaughton, V., Conrad, J., Contreras, J. L., Coppi, P., Corlier, M., Corona, P., Corpace, O., Corti, D., Cortina, J., Costantini, H., Cotter, G., Courty, B., Couturier, S., Covino, S., Croston, J., Cusumano, G., Daniel, M. K., Dazzi, F., Angelis, A. de, de Cea del Pozo, E., de Gouveia Dal Pino, E. M., de Jager, O., de la Calle Pérez, I., De La Vega, G., De Lotto, B., de Naurois, M., de Oña Wilhelmi, E., de Souza, V., Decerprit, B., Deil, C., Delagnes, E., Deleglise, G., Delgado, C., Dettlaff, T., Di Paolo, A., Di Pierro, F., Díaz, C., Dick, J., Dickinson, H., Digel, S. W., Dimitrov, D., Disset, G., Djannati-Ataï, A., Doert, M., Domainko, W., Dorner, D., Doro, M., Dournaux, J.-L., Dravins, D., Drury, L., Dubois, F., Dubois, R., Dubus, G., Dufour, C., Durand, D., Dyks, J., Dyrda, M., Edy, E., Egberts, K., Eleftheriadis, C., Elles, S., Emmanoulopoulos, D., Enomoto, R., Ernenwein, J.-P., Errando, M., Etchegoyen, A., Falcone, A. D., Farakos, K., Farnier, C., Federici, S., Feinstein, F., Ferenc, D., Fillin-Martino, E., Fink, D., Finley, C., Finley, J. P., Firpo, R., Florin, D., Föhr, C., Fokitis, E., Font, Ll., Fontaine, G., Fontana, A., Förster, A., Fortson, L., Fouque, N., Fransson, C., Fraser, G. W., Fresnillo, L., Fruck, C., Fujita, Y., Fukazawa, Y., Funk, S., Gäbele, W., Gabici, S., Gadola, A., Galante, N., Gallant, Y., García, B., García López, R. J., Garrido, D., Garrido, L., Gascón, D., Gasq, C., Gaug, M., Gaweda, J., Geffroy, N., Ghag, C., Ghedina, A., Ghigo, M., Gianakaki, E., Giarrusso, S., Giavitto, G., Giebels, B., Giro, E., Giubilato, P., Glanzman, T., Glicenstein, J.-F., Gochna, M., Golev, V., Gómez Berisso, M., González, A., González, F., Grañena, F., Graciani, R., Granot, J., Gredig, R., Green, A., Greenshaw, T., Grimm, O., Grube, J., Grudzińska, M., Grygorczuk, J., Guarino, V., Guglielmi, L., Guilloux, F., Gunji, S., Gyuk, G., Hadasch, D., Haefner, D., Hagiwara, R., Hahn, J., Hallgren, A., Hara, S., Hardcastle, M. J., Hassan, T., Haubold, T., Hauser, M., Hayashida, M., Heller, R., Henri, G., Hermann, G., Herrero, A., Hinton, J. A., Hoffmann, D., Hofmann, W., Hofverberg, P., Horns, D., Hrupec, D., Huan, H., Huber, B., Huet, J.-M., Hughes, G., Hultquist, K., Humensky, T. B., Huppert, J.-F., Ibarra, A., Illa, J. M., Ingjald, J., Inoue, Y., Inoue, S., Ioka, K., Jablonski, C., Jacholkowska, A., Janiak, M., Jean, P., Jensen, H., Jogler, T., Jung, I., Kaaret, P., Kabuki, S., Kakuwa, J., Kalkuhl, C., Kankanyan, R., Kapala, M., Karastergiou, A., Karczewski, M., Karkar, S., Karlsson, N., Kasperek, J., Katagiri, H., Katarzyński, K., Kawanaka, N., Kȩdziora, B., Kendziorra, E., Khélifi, B., Kieda, D., Kifune, T., Kihm, T., Klepser, S., Kluźniak, W., Knapp, J., Knappy, A. R., Kneiske, T., Knödlseder, J., Köck, F., Kodani, K., Kohri, K., Kokkotas, K., Komin, N., Konopelko, A., Kosack, K., Kossakowski, R., Kostka, P., Kotuła, J., Kowal, G., Kozioł, J., Krähenbühl, T., Krause, J., Krawczynski, H., Krennrich, F., Kretzschmann, A., Kubo, H., Kudryavtsev, V. A., Kushida, J., La Barbera, N., La Parola, V., La Rosa, G., López, A., Lamanna, G., Laporte, P., Lavalley, C., Le Flour, T., Le Padellec, A., Lenain, J.-P., Lessio, L., Lieunard, B., Lindfors, E., Liolios, A., Lohse, T., Lombardi, S., Lopatin, A., Lorenz, E., Lubiński, P., Luz, O., Lyard, E., Maccarone, M. C., Maccarone, T., Maier, G., Majumdar, P., Maltezos, S., Małkiewicz, P., Mañá, C., Manalaysay, A., Maneva, G., Mangano, A., Manigot, P., Marín, J., Mariotti, M., Markoff, S., Martínez, G., Martínez, M., Mastichiadis, A., Matsumoto, H., Mattiazzo, S., Mazin, D., McComb, T. J. L., McCubbin, N., McHardy, I., Medina, C., Melkumyan, D., Mendes, A., Mertsch, P., Meucci, M., Michałowski, J., Micolon, P., Mineo, T., Mirabal, N., Mirabel, F., Miranda, J. M., Mirzoyan, R., Mizuno, T., Moal, B., Moderski, R., Molinari, E., Monteiro, I., Moralejo, A., Morello, C., Mori, K., Motta, G., Mottez, F., Moulin, E., Mukherjee, R., Munar, P., Muraishi, H., Murase, K., Murphy, A. StJ., Nagataki, S., Naito, T., Nakamori, T., Nakayama, K., Naumann, C., Naumann, D., Nayman, P., Nedbal, D., Niedźwiecki, A., Niemiec, J., Nikolaidis, A., Nishijima, K., Nolan, S. J., Nowak, N., O’Brien, P. T., Ochoa, I., Ohira, Y., Ohishi, M., Ohka, H., Okumura, A., Olivetto, C., Ong, R. A., Orito, R., Orr, M., Osborne, J. P., Ostrowski, M., Otero, L., Otte, A. N., Ovcharov, E., Oya, I., Oziȩbło, A., Paiano, S., Pallota, J., Panazol, J. L., Paneque, D., Panter, M., Paoletti, R., Papyan, G., Paredes, J. M., Pareschi, G., Parsons, R. D., Paz Arribas, M., Pedaletti, G., Pepato, A., Persic, M., Petrucci, P. O., Peyaud, B., Piechocki, W., Pita, S., Pivato, G., Płatos, Ł., Platzer, R., Pogosyan, L., Pohl, M., Pojmański, G., Ponz, J. D., Potter, W., Prandini, E., Preece, R., Prokoph, H., Pühlhofer, G., Punch, M., Quel, E., Quirrenbach, A., Rajda, P., Rando, R., Rataj, M., Raue, M., Reimann, C., Reimann, O., Reimer, A., Reimer, O., Renaud, M., Renner, S., Reymond, J.-M., Rhode, W., Ribó, M., Ribordy, M., Rico, J., Rieger, F., Ringegni, P., Ripken, J., Ristori, P., Rivoire, S., Rob, L., Rodriguez, S., Roeser, U., Romano, P., Romero, G. E., Rosier-Lees, S., Rovero, A. C., Roy, F., Royer, S., Rudak, B., Rulten, C. B., Ruppel, J., Russo, F., Ryde, F., Sacco, B., Saggion, A., Sahakian, V., Saito, K., Saito, T., Sakaki, N., Salazar, E., Salini, A., Sánchez, F., Sánchez Conde, M. Á., Santangelo, A., Santos, E. M., Sanuy, A., Sapozhnikov, L., Sarkar, S., Scalzotto, V., Scapin, V., Scarcioffolo, M., Schanz, T., Schlenstedt, S., Schlickeiser, R., Schmidt, T., Schmoll, J., Schroedter, M., Schultz, C., Schultze, J., Schulz, A., Schwanke, U., Schwarzburg, S., Schweizer, T., Seiradakis, J., Selmane, S., Seweryn, K., Shayduk, M., Shellard, R. C., Shibata, T., Sikora, M., Silk, J., Sillanpää, A., Sitarek, J., Skole, C., Smith, N., Sobczyńska, D., Sofo Haro, M., Sol, H., Spanier, F., Spiga, D., Spyrou, S., Stamatescu, V., Stamerra, A., Starling, R. L. C., Stawarz, Ł., Steenkamp, R., Stegmann, C., Steiner, S., Stergioulas, N., Sternberger, R., Stinzing, F., Stodulski, M., Straumann, U., Suárez, A., Suchenek, M., Sugawara, R., Sulanke, K. H., Sun, S., Supanitsky, A. D., Sutcliffe, P., Szanecki, M., Szepieniec, T., Szostek, A., Szymkowiak, A., Tagliaferri, G., Tajima, H., Takahashi, H., Takahashi, K., Takalo, L., Takami, H., Talbot, R. G., Tam, P. H., Tanaka, M., Tanimori, T., Tavani, M., Tavernet, J.-P., Tchernin, C., Tejedor, L. A., Telezhinsky, I., Temnikov, P., Tenzer, C., Terada, Y., Terrier, R., Teshima, M., Testa, V., Tibaldo, L., Tibolla, O., Tluczykont, M., Todero Peixoto, C. J., Tokanai, F., Tokarz, M., Toma, K., Torres, D. F., Tosti, G., Totani, T., Toussenel, F., Vallania, P., Vallejo, G., van der Walt, J., van Eldik, C., Vandenbroucke, J., Vankov, H., Vasileiadis, G., Vassiliev, V. V., Vegas, I., Venter, L., Vercellone, S., Veyssiere, C., Vialle, J. P., Videla, M., Vincent, P., Vink, J., Vlahakis, N., Vlahos, L., Vogler, P., Vollhardt, A., Volpe, F., von Gunten, H. P., Vorobiov, S., Wagner, S., Wagner, R. M., Wagner, B., Wakely, S. P., Walter, P., Walter, R., Warwick, R., Wawer, P., Wawrzaszek, R., Webb, N., Wegner, P., Weinstein, A., Weitzel, Q., Welsing, R., Wetteskind, H., White, R., Wierzcholska, A., Wilkinson, M. I., Williams, D. A., Winde, M., Wischnewski, R., Wiśniewski, Ł., Wolczko, A., Wood, M., Xiong, Q., Yamamoto, T., Yamaoka, K., Yamazaki, R., Yanagita, S., Yoffo, B., Yonetani, M., Yoshida, A., Yoshida, T., Yoshikoshi, T., Zabalza, V., Zagdański, A., Zajczyk, A., Zdziarski, A., Zech, A., Ziȩtara, K., Ziółkowski, P., Zitelli, V., Zychowski, P., and The CTA Consortium

Published
2011
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34. Methodology to Determine Bulk Crystal Quality in Terms of Carrier Lifetime without Wafering

Author

Müller, M., Weber, A., Kropp, A.I., Ehrl, M., Urban, T., Häussermann, P., Neubert, B., Albrecht, A., Seidel, S., Otto, R., Dadzis, K., Menzel, R., Trempa, M., Kranert, C., Reimann, C., and Heitmann, J.

Subjects
Feedstock, Crystallisation, Wafering, Defect Engineering, Silicon Materials and Cells
Abstract

37th European Photovoltaic Solar Energy Conference and Exhibition; 449-451, A methodology is proposed to evaluate bulk silicon crystal quality without wafering, which supports the development and optimization of crystal growth techniques. A process sequence is developed to passivate thick slices from silicon crystals as well as silicon wafers. It consists of saw-damage removal, a RCA clean, an atomic layer deposited Al2O3 and annealing. Samples with dimensions in the range of 30 – 163 mm length and width, and 0.1 – 2.0 mm thickness can be processed. The methodology is successfully applied to evaluate the bulk carrier lifetime for potential estimations of advanced crystallization techniques and the determination of local interstitial iron, e.g. due to crucible in-diffusion.

Published
2020
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35. Limitations of the Growth Rate of Silicon Mono Ingots Grown by the Czochralski Technique

Author

Mosel, F., Denisov, A.V., Klipp, B., Sennova, N., Kranert, C., Jung, T., Trempa, M., Reimann, C., and Friedrich, J.

Subjects
Feedstock, Crystallisation, Wafering, Defect Engineering, Silicon Materials and Cells
Abstract

37th European Photovoltaic Solar Energy Conference and Exhibition; 468-473, In the PV industry, cost pressure subsists in the entire production chain of PV modules, affecting the further development of high-performance cell concepts and the manufacture of suitable high quality substrate crystals. The improvement of the quality of monocrystalline silicon ingots, grown by the Czochralski technique, while increasing productivity and reducing crystallization costs, is a major challenge. The reductions in production costs can be achieved by increasing growth rate and melt volumes. Both options were shown at EUPVSEC 2016 [1]. In this contribution we have investigated the basic limitations of the pull rate in the Czochralski process. As part of our investigations we have grown several crystals beyond the pulling speed limit resulting in a loss of the cylindrical shape of the ingot, often described as twisting or spiral growth. We performed these crystal growth experiments in various crystal growing configurations using different process parameters. We have analyzed the boundary conditions by means of numerical simulation calculations and compared the results with the crystal growth experiments. From this, we have derived diagrams that allow an estimation of the pull rate limit for the different growth conditions. We have found a simple relationship between the growth rate and the deflection of the phase boundary allowing the growth conditions to be assessed in terms of the stability criteria mentioned above. We show that by the application of an active crystal cooler during the growth process in combination with a suitable inner heat shield the deflection of the growth interface can be influenced. This fact can be used to realize a higher pull speed and to influence the material quality of the growing crystal.

Published
2020
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36. Behavior of Particle Depots in Molten Silicon During Float-Zone Growth in Strong Magnetic Fields

Author

Jauss, T, Croell, A, SorgenFrei, T, Azizi, M, Reimann, C, Friedrich, J, and Volz, M. P

Subjects
Solar Physics
Abstract

Solar cells made from directionally solidified silicon cover 57% of the photovoltaic industry's market [1]. One major issue during directional solidification of silicon is the precipitation of foreign phase particles. These particles, mainly SiC and Si3N4, are precipitated from the dissolved crucible coating, which is made of silicon nitride, and the dissolution of carbon monoxide from the furnace atmosphere. Due to their hardness and size of several hundred micrometers, those particles can lead to severe problems during the wire sawing process for wafering the ingots. Additionally, SiC particles can act as a shunt, short circuiting the solar cell. Even if the particles are too small to disturb the wafering process, they can lead to a grit structure of silicon micro grains and serve as sources for dislocations. All of this lowers the yield of solar cells and reduces the performance of cells and modules. We studied the behaviour of SiC particle depots during float-zone growth under an oxide skin, and strong static magnetic fields. For high field strengths of 3T and above and an oxide layer on the sample surface, convection is sufficiently suppressed to create a diffusive like regime, with strongly dampened convection [2, 3]. To investigate the difference between atomically rough phase boundaries and facetted growth, samples with [100] and [111] orientation were processed.

Published
2014

37. Behavior of Particle Depots in Molten Silicon During Float-Zone Growth in Strong Static Magnetic Fields

Author

Jauss, T, SorgenFrei, T, Croell, A, Azizi, M, Reimann, C, Friedrich, J, and Volz, M. P

Subjects
Solar Physics
Abstract

In the photovoltaics industry, the largest market share is represented by solar cells made from multicrystalline silicon, which is grown by directional solidification. During the growth process, the silicon melt is in contact with the silicon nitride coated crucible walls and the furnace atmosphere which contains carbon monoxide. The dissolution of the crucible coating, the carbon bearing gas, and the carbon already present in the feedstock, lead to the precipitation of silicon carbide, and silicon nitride, at later stages of the growth process. The precipitation of Si3N4 and SiC particles of up to several hundred micrometers in diameter leads to severe problems during the wire sawing process for wafering the ingots. Furthermore the growth of the silicon grains can be negatively influenced by the presence of particles, which act as nucleation sources and lead to a grit structure of small grains and are sources for dislocations. If doped with Nitrogen from the dissolved crucible coating, SiC is a semi conductive material, and can act as a shunt, short circuiting parts of the solar cell. For these reasons, the incorporation of such particles needs to be avoided. In this contribution we performed model experiments in which the transport of intentionally added SiC particles and their interaction with the solid-liquid interface during float zone growth of silicon in strong steady magnetic fields was investigated. SiC particles of 7μm and 60μm size are placed in single crystal silicon [100] and [111] rods of 8mm diameter. This is achieved by drilling a hole of 2mm diameter, filling in the particles and closing the hole by melting the surface of the rod until a film of silicon covers the hole. The samples are processed under a vacuum of 1x10(exp -5) mbar or better, to prevent gas inclusions. An oxide layer to suppress Marangoni convection is applied by wet oxidation. Experiments without and with static magnetic field are carried out to investigate the influence of melt convection on the distribution of particles and their incorporation into the crystal. The field strengths applied by a superconducting magnet are 1T, 3T, 4.5T, and 5T. The increase in field strength dampens the melt flow, and so this study provides comparative data to the crystal growth experiment to be carried out onboard the sounding rocket mission TEXUS 51, where purely diffusive growth condition will be achieved under microgravity conditions.

Published
2014

39. Use of GEMAS data for risk assessment of cadmium in European agricultural and grazing land soil under the REACH Regulation

Author

Birke, M., Reimann, C., Oorts, K., Uwe, R., Alecos, D., Dinelli, E., Ladenberger, A., Halamić, J., Mateja, G., Jähne Klingberg, F., Andersson, M., Baritz, R., Batista, M. J., Bel Ian, A., Cicchella, D., De Vos, W., Duris, M., Dusza Dobek, A., Eggen, O. A., Eklund, M., Ernsten, V., Filzmoser, P., Flight, D. M. A., Forrester, S., Fügedi, U., Gilcucis, A., Gregorauskiene, V., De Groot, W., Gulan, A., Haslinger, E., Hayoz, P., Hoogewerff, J., Hrvatovic, H., Husnjak, S., Janik, L., Jordan, G., Kaminari, M., Kirby, J., Klos, V., Kwecko, P., Kuti, L., Locutura, J., Lucivjansky, P., Mann, A., Mackovych, D., Mclaughlin, M., Malyuk, B. I., Maquil, R., Meuli, R. G., Mol, G., Negrel, P., ’Connor, P. O, Ottesen, R. T., Pasnieczna, A., Petersell, V., Pfleiderer, S., Ponavi c, M., Prazeres, C., Radusinovic, S., Salpeteur, I., Scanlon, R., Schedl, A., Scheib, A., Schoeters, I., Sefcik, P., Sellersjo, E., Slaninka, I., Soriano Disla, J. M., Sorsa, A., Svrkota, R., Stafilov, T., Tarvainen, T., Tendavilov, V., Valera, P., Verougstraete, V., Vidojevic, D., Zomeni, Z., Zissimos, A., ALBANESE, STEFANO, DE VIVO, BENEDETTO, LIMA, ANNAMARIA, Birke, M., Reimann, C., Oorts, K., Uwe, R., Alecos, D., Dinelli, E., Ladenberger, A., Halamić, J., Mateja, G., Jähne Klingberg, F., Albanese, Stefano, Andersson, M., Baritz, R., Batista, M. J., Bel Ian, A., Cicchella, D., DE VIVO, Benedetto, De Vos, W., Duris, M., Dusza Dobek, A., Eggen, O. A., Eklund, M., Ernsten, V., Filzmoser, P., Flight, D. M. A., Forrester, S., Fügedi, U., Gilcucis, A., Gregorauskiene, V., De Groot, W., Gulan, A., Haslinger, E., Hayoz, P., Hoogewerff, J., Hrvatovic, H., Husnjak, S., Janik, L., Jordan, G., Kaminari, M., Kirby, J., Klos, V., Kwecko, P., Kuti, L., Lima, Annamaria, Locutura, J., Lucivjansky, P., Mann, A., Mackovych, D., Mclaughlin, M., Malyuk, B. I., Maquil, R., Meuli, R. G., Mol, G., Negrel, P., ’Connor, P. O, Ottesen, R. T., Pasnieczna, A., Petersell, V., Pfleiderer, S., Ponavi c, M., Prazeres, C., Radusinovic, S., Salpeteur, I., Scanlon, R., Schedl, A., Scheib, A., Schoeters, I., Sefcik, P., Sellersjo, E., Slaninka, I., Soriano Disla, J. M., Sorsa, A., Svrkota, R., Stafilov, T., Tarvainen, T., Tendavilov, V., Valera, P., Verougstraete, V., Vidojevic, D., Zomeni, Z., Zissimos, A., Birke, Manfred, Reimann, Clemen, Oorts, Koen, Rauch, Uwe, Demetriades, Aleco, Dinelli, Enrico, Ladenberger, Anna, Halamić, Josip, Gosar, Mateja, and Jähne-Klingberg, Fabian

Subjects
Pollution, agricultural soil, grazing land soil, risk assessment, REACH, cadmium, Soil test, media_common.quotation_subject, chemistry.chemical_element, 010501 environmental sciences, 010502 geochemistry & geophysics, Agricultural soil, 01 natural sciences, Ecology and Environment, Geochemistry and Petrology, Grazing, Environmental Chemistry, Risk assessment, 0105 earth and related environmental sciences, media_common, Hydrology, Cadmium, business.industry, Forestry, Expert group, Chemistry, chemistry, Agriculture, Soil water, Earth Sciences, business, Grazing land soil
Abstract

Over 4000 soil samples were collected for the “Geochemical Mapping of Agricultural and Grazing Land Soil of Europe” (GEMAS) project carried out by the EuroGeoSurveys Geochemistry Expert Group. Cadmium concentrations are reported for the

Published
2016

49. Further Tests of Methods to Reduce the Red-Zone in the Top Region of mc-Silicon Ingots

Author

Bähr, T., Ghosh, M., Kranert, C., Reimann, C., and Morche, C.

Subjects
Feedstock, Crystallisation, Wafering, Defect Engineering, Silicon Materials and Cells
Abstract

36th European Photovoltaic Solar Energy Conference and Exhibition; 335-340, Following our investigations presented at the last PVSEC we continued our efforts of reduce the top redzone in multicrystalline silicon ingots for photovoltaic application. We improved the method of melt removal from the top of the growing ingot by vacuum suction via pipes in our G1 lab furnace in order to increase the high carrier lifetime volume fraction. With our vacuum suction device, up to 15% of the melt (compared to the original mass of the G1 ingot) can be removed within a few seconds. Thus, the surface of the growing crystal can be freed from a highly impurity enriched melt before the end of the regular crystallization process by stopping the crystal growth immediately. However, in all of our experiments a top red-zone of at least 1.7 cm in the mc-Si ingot remained. Compared to a reference ingot, where no melt was removed, no significant change by our treatment was achieved. We suppose additional contamination of the ingot via the gas phase to be a reason for this behavior. As further experiments show, the thickness of the red-zone can mainly be influenced by the thermal conditions and the duration of the cool down process after crystallization.

Published
2019
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50. Cost Effective Growth of Silicon Mono Ingots by the Application of Active Crystal Cooling in Combination with Large Melt Volumes in Cz-Puller

Author

Mosel, F., Denisov, A.V., Klipp, B., Sennova, N., Kunert, R., Zobel, F., Dold, P., Trempa, M., Reimann, C., and Friedrich, J.

Subjects
Feedstock, Crystallisation, Wafering, Defect Engineering, Silicon Materials and Cells
Abstract

36th European Photovoltaic Solar Energy Conference and Exhibition; 345-351, In the PV industry, there is still a sustained cost pressure in the entire production chain of PV modules. Incidentally, the demand for ever higher efficiencies is another challenge to the material quality in substrate production on the one hand and cell technology on the other hand. For the production of monocrystalline silicon ingots by the Cz process, this means the demand for an extremely productive technology of crystal pulling systems as well as for cost-saving processes. Based on these considerations, a mobile recharge system was developed that allows for the multipulling technique that is the sequential pulling of several crystals from a single crucible. This mobile feeding system offers the unique possibility to serve several Cz-pullers time delayed, which means less investment. In addition, an active crystal cooling device has been developed, which can be retrofitted and allows a significant increase in the pull speed. The combination of active crystal cooling with multipulling enables a strong reduction in production costs of silicon crystals. Another way to reduce costs is to use larger melt weights (primary loadings) to minimize unproductive crystal growing process times (neck, shoulder, cone phase). When increasing the primary loadings, however, the process stability must be taken into account. This raises the question to what extent large melt volumes with the resulting turbulent convection phenomena can be controlled without the use of magnetic fields to dampen the convection phenomena.

Published
2019
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