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The phosphorescence of [Ru(bhq)(CO) 2 Cl(L)] (L=PEt 3 , p -toluidine and piperidine) in glassy rigid solution and in crystals are observed. We have further obtained zero-field splittings by the method of optical detection of magnetic resonance. The location of the spectrum, lifetime, and the zero-field splittings all indicate that the emission is from the ligand localized 3 ππ* state.

We developed FRAM(FRAM is a registered trademark of Ramtron International Corporation that stands for FeRAM) technologies that are fully compatible with half-micron CMOS logic's. The technologies achieve 1T/1C FRAM cell 12.5um 2 in a size and 68k-FRAM embedded 8bit-MCU. The CMOS transistors work at 5V for a cell operation and 3V for a logic operation. We did not use a COB to employ a present CMOS processing, and used the local interconnect to reduce a chip size. We used the W plug to contact to deep diffusion layers through high-aspect contact holes. The CMP planarization was used to relax PZT deposition and Pt etching. To prevent the process degradation of PZT, we used single Al wiring with SOG as an interlayer dielectric. The cover dielectric was formed with plasma TEOS-CVD without SiN to prevent the process degradation at this case. The SiN cover will be indispensable in real products. These technologies achieved a cell size 6.95× 1.8=12.5(um 2 ) for 1T/1C and 4.2× 6.5=27.3(um 2 ) for 2T/2C that are the smallest cell size in FRAM's that do not use a COB structure and a poly-plug as a storage.