1. Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors
- Author
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Estrada-Real, Ana, Paradisanos, Ioannis, Wiecha, Peter R., Poumirol, Jean-Marie, Cuche, Aurelien, Agez, Gonzague, Lagarde, Delphine, Marie, Xavier, Larrey, Vincent, Müller, Jonas, Larrieu, Guilhem, Paillard, Vincent, and Urbaszek, Bernhard
- Subjects
Physics - Optics ,Condensed Matter - Materials Science - Abstract
Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling between a MoSe2 monolayer and the near-field of dielectric nanoresonators. Through a comparison of dark-field (DF) scattering spectroscopy and photoluminescence excitation experiments (PLE), we show that the MoSe2 absorption can be enhanced via the near-field of a nanoresonator. We demonstrate spectral tuning of the absorption via the geometry of individual Mie resonators. We show that we indeed access the optical near-field of the nanoresonators, by measuring a spectral shift between the typical near-field resonances in PLE compared to the far-field resonances in DF scattering. Our results prove that using MoSe2 as an active probe allows accessing the optical near-field above photonic nanostructures, without the requirement of highly complex near-field microscopy equipment., Comment: Main paper and supplement
- Published
- 2022
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