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We have developed a theory of dimensional quantization for nanostructures, both one-dimensional and zero-dimensional, constructed from monoatomic layers of transition metal dichalcogenides (TMDCs). This theory has enabled us to derive expressions for the energy spectra of charge carriers in both even and odd states (relative to coordinate inversion), as these states occur within quantum-confined lines and points of the TMDC monoatomic layers, dependent on their geometric dimensions. Our numerical analysis provides a detailed exploration of the quantum-confined energy states of electrons within these nanostructures, offering insights into their potential applications in advanced nanoelectronic devices. This work not only advances our understanding of the energy characteristics of TMDC monoatomic layers but also contributes to the broader field of material science by exploring the effects of dimensional quantization on electronic properties. [ABSTRACT FROM AUTHOR]

The dependence of the transparency coefficient of a five-layer two-barrier structure on the electron energy and the ratio of the widths of two neighboring potential barriers is calculated. It is shown that the extremum of the transparency coefficient significantly depends on the geometric dimensions of the structure layers. In a symmetric five-layer two-barrier semiconductor structure, the condition for the occurrence of "resonant" electron transitions is defined. It is demonstrated that the mechanism of such (resonant) transitions is explained by the interference of de Broglie waves of electrons in the potential well, where the phases of de Broglie waves are determined by the geometric dimensions of the structure, and their amplitudes - by the ratio of the carrier energy to the height of the potential barrier. It has been established that with an increase in the effective mass of charge carriers, the number of intersections of the quantities fR(ξ) and (1-2ξ) /ξ-ξ² increases. These intersections determine the dimensionally-quantized levels where electrons are localized. [ABSTRACT FROM AUTHOR]

A quantitative theory of two-photon linear-circular dichroism caused between the subbands of light and heavy holes of the valence band and conduction band is constructed, which takes into account the admixture of valence band states to the conduction band states and the temperature dependence of the band gap (Eg(T)) in semiconductors of tetrahedral symmetry in the multiband Kane model. It is shown that the type of oscillatory angular dependence or the amplitude values of the probabilities of two-photon optical transitions depend on the state of light polarization. This is due to the fact that, under the influence of linearly polarized light, alignment along the pulse occurs, and under the action of circularly polarized light, the moments of current carriers are oriented. It has been determined that the probability of two-photon optical transitions from the heavy hole subband to the conduction band of semiconductors at a fixed temperature increases with increasing frequency, passes through a maximum, and sharply decreases regardless of the degree of polarization of light, as well as the band gap. [ABSTRACT FROM AUTHOR]

This study investigates the kinetic properties of both symmetrical and asymmetrical multilayer and nano-sized semiconductor structures. We develop a theoretical framework using various models and mathematical methods to solve the Schrödinger matrix equation for a system of electrons, taking into account the Bastard condition, which considers the difference in the effective masses of current carriers in adjacent layers. We analyze tunnel-coupled electronic states in quantum wells separated by a narrow tunneltransparent potential barrier. Our findings provide insights into the electronic properties of semiconductor structures, which are crucial for applications in micro- or nanoelectronics and other areas of solid-state physics. [ABSTRACT FROM AUTHOR]