35 results on '"Rasheed, Umbreen"'
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2. Revealing structural, elastic, optoelectronic and thermoelectric properties of lead-free Ba2XTiO6 (X = Hf, Ce, Te) double perovskite for solar cells applications
3. Theoretical insight into physical characteristics of lead-free perovskites Rb2TlSbX6 (X = Cl, Br, I) for optoelectronic devices
4. First-principles study of structural, mechanical, optoelectronic and thermoelectric properties of lead-free Cs2BSnX6 (B = Mg, Cu; X = Cl, Br, I) for photo responsive RRAM devices
5. Exploration of lead-free novel double perovskite halides Na2TlBiX6 (X = Cl, Br, I) for flexible memory devices: Using DFT approach
6. Quantum capacitance engineering in homo and hetero bilayer structure of blue phosphorene electrode for supercapacitor applications: Using ab-initio calculation
7. Role of oxygen vacancy in controlling the resistive switching mechanism for the development of conducting filaments in response of homo and hetero electrodes: Using DFT approach
8. ab initio study of quantized conduction mechanism in trilayered heterostructure for scaled down memory device applications
9. First principle investigation of metallic ion conduction mechanisms in oxide materials for optical responsive storage devices
10. Theoretical insight of confinement of filament in SrMoO3 electrode by compositional control for memory devices
11. Electrocatalytic behavior of Ni-Co-Fe3O4 nanospheres for efficient oxygen evolution reaction
12. Theoretical expolartion of site selective Perovskites for the application of electronic and optoresponsive memory devices
13. Semiconductor Optical Memory Devices
14. First-principles study of structural, mechanical, optoelectronic and thermoelectric properties of lead-free Cs2BSnX6 (B = Mg, Cu; X = Cl, Br, I) for photo responsive RRAM devices.
15. First principle investigation of polaronic resistive switching behavior in titania based memristors with different charge states
16. First principles investigation of physically conductive bridge filament formation of aluminum doped perovskite materials for neuromorphic memristive applications
17. First principles investigation of oxygen vacancies filaments in polymorphic Titania and their role in memristor's applications
18. Correction: Revealing structural, elastic, optoelectronic and thermoelectric properties of lead-free Ba2XTiO6 (X = Hf, Ce, Te) double perovskite for solar cells applications.
19. Structural, electronic and optical properties of transition metal doped Hf1-xTMxO2 (TM = Co, Ni and Zn) using modified TB-mBJ potential for optoelectronic memristors devices
20. Theoretical occurrence of quantized chemistry of conduction mechanism in layered perovskite for the application of Resistive Random Access Memory devices.
21. A First Principle Study of Graphene/Metal-Oxides as Nano-Composite Electrode Materials for Supercapacitors
22. An ab initio investigation of the structural, mechanical, electronic, optical, and thermoelectric characteristics of novel double perovskite halides Cs2CaSnX6 (X = Cl, Br, I) for optically influenced RRAM devices
23. Correction: An ab initio investigation of the structural, mechanical, electronic, optical, and thermoelectric characteristics of novel double perovskite halides Cs2CaSnX6 (X = Cl, Br, I) for optically influenced RRAM devices
24. Theoretical Investigation of Origin of Quantized Conduction in 2D Layered Ruddleson–Popper Perovskite Heterostructure for the RRAM Applications
25. An insight into structural, electronic and optical characteristics of Mo1-xMxO3 (M = Zr, Y, ZrY) for the formation of conducting filaments in optoelectronic memory devices: A first principles study
26. An ab initio investigation of the structural, mechanical, electronic, optical, and thermoelectric characteristics of novel double perovskite halides Cs2CaSnX6 (X = Cl, Br, I) for optically influenced RRAM devices.
27. Theoretical Exploration of Site Selective Perovskites for the Application of Flexible Optoresponsive Memory Devices
28. Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications
29. Improved resistive switching characteristics of a multi-stacked HfO2/Al2O3/HfO2 RRAM structure for neuromorphic and synaptic applications: experimental and computational study.
30. Introduction and Significant Parameters for Layered Materials
31. A first-principles study of Cu and Al doping in ZrO2 for RRAM device applications
32. An ab initio study of spectroscopic and thermodynamic characteristics of MgH2 and TiC systems
33. Correction: An ab initio investigation of the structural, mechanical, electronic, optical, and thermoelectric characteristics of novel double perovskite halides Cs 2 CaSnX 6 (X = Cl, Br, I) for optically influenced RRAM devices.
34. An ab initio investigation of the structural, mechanical, electronic, optical, and thermoelectric characteristics of novel double perovskite halides Cs 2 CaSnX 6 (X = Cl, Br, I) for optically influenced RRAM devices.
35. Improved resistive switching characteristics of a multi-stacked HfO 2 /Al 2 O 3 /HfO 2 RRAM structure for neuromorphic and synaptic applications: experimental and computational study.
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