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In this work, we develop a symmetry-based classification of Chern phases in honeycomb photonic crystals, considering arbitrary nonreciprocal couplings compatible with energy conservation. Our analysis focuses on crystals formed through nonreciprocal perturbations of photonic graphene. These perturbations, which can have arbitrary spatial variations, are generally described by scalar and vector fields. Using a tight-binding model, we consider the most general nonreciprocal interactions, including gyromagnetic, pseudo-Tellegen, and moving medium responses, and examine how the corresponding nonreciprocal fields influence the crystal's topology. Our findings reveal that nonreciprocal interactions alone are insufficient to induce a topologically nontrivial phase. Instead, a nontrivial p6m component in the nonreciprocal fields is required to open a bandgap and achieve a non-zero Chern number. These results provide a symmetry-based roadmap for engineering photonic topological phases via nonreciprocal perturbations of photonic graphene, offering practical guidelines for designing topological phases in graphene-like photonic crystals., Comment: 47 pages, 8 figures

Despite the recent success of identifying experimental signatures of the orbital Hall effect (OHE), the research on the microscopic mechanisms behind this unique phenomenon is still in its infancy. Here, using a gapped 2D Dirac material as a model system of the OHE, we develop a microscopic theory of orbital transport which captures extrinsic disorder effects non-perturbatively. We show that it predicts several hitherto unknown effects, including (i) a strong dependence of the OHE conductivity with the strength and symmetry of the impurity scattering potential, and (ii) a smooth crossover from intrinsic to extrinsic OHE as a function of the Fermi energy. In contrast to previous (perturbative) studies, the OHE is found to exhibit bona fide diffusive behavior in the dilute impurity limit, which we trace back to the dominance of skew scattering-type processes. Our work unveils the crucial nature of nonperturbative vertex corrections for a correct description of extrinsic orbital Hall transport and confirms common short-range impurities as key enablers of the OHE., Comment: 9 pages, 4 figures (includes supplementary material)

We show that orbital currents can describe the transport of orbital magnetic moments of Bloch states in models where the formalism based on valley current is not applicable. As a case study, we consider Kekul\'e distorted graphene. We begin by analyzing the band structure in detail and obtain the orbital magnetic moment operator for this model within the framework of the modern theory of magnetism. Despite the simultaneous presence of time-reversal and spatial-inversion symmetries, such operator may be defined, although its expectation value at a given energy is zero. Nevertheless, its presence can be exposed by the application of an external magnetic field. We then proceed to study the transport of these quantities. In the Kekul\'e-$O$ distorted graphene model, the strong coupling between different valleys prevents the definition of a bulk valley current. However, the formalism of the orbital Hall effect together with the non-Abelian description of the magnetic moment operator can be directly applied to describe its transport in these types of models. We show that the Kekul\'e-$O$ distorted graphene model exhibits an orbital Hall insulating plateau whose height is inversely proportional to the energy band gap produced by intervalley coupling. Our results strengthen the perspective of using the orbital Hall effect formalism as a preferable alternative to the valley Hall effect, Comment: 8 pages, 3 figures

We study the orbital Hall effect (OHE) in the AC regime using bilayer graphene (BLG) as a prototypical material platform. While the unbiased BLG has gapless electronic spectra, applying a perpendicular electric field creates an energy band gap that can be continuously tuned from zero to high values. By exploiting this flexibility, we demonstrate the ability to control the behavior of AC orbital Hall conductivity. Particularly, we demonstrate that the orbital Hall conductivity at the neutrality point changes its signal at a critical frequency, the value of which is proportional to the perpendicular electric field. For BLG with narrow band gaps, the active frequency region for the AC OHE may extend to a few terahertz, which is experimentally accessible with current technologies. We also consider the introduction of a perpendicular magnetic field in the weak coupling regime using first-order perturbation theory to illustrate how the breaking of time-reversal symmetry enables the emergence of AC charge Hall effect in the charge-doped situation and modifies the AC orbital Hall conductivity. Our calculations suggest that BLG with narrow bandgaps is a practical candidate for investigating time-dependent orbital angular momentum transport., Comment: 11 pages, 9 figures

Here, we present an in-depth theoretical analysis of the linear electrooptic effect in low-symmetry three-dimensional (3D) conductive materials with large Berry curvature dipoles. Our study identifies two distinct kinetic contributions to the linear electrooptic effect: a gyrotropic Hermitian (conservative) piece and a non-Hermitian term that can originate optical gain. We concentrate on the study of 3D materials belonging to the 32 ($D_3$) point group subject to a static electric bias along the trigonal axis. Our investigation shows that doped trigonal tellurium has promising properties, with its gyrotropic electrooptic response offering the potential for realizing electrically-biased electromagnetic isolators and inducing significant optical dichroism. Most notably, it is demonstrated that under sufficiently large static electric bias, tellurium's non-Hermitian electrooptic response may lead to optical gain. Using first-principles calculations, it is shown that n-doped tellurium is particularly promising, as it can host significantly larger Berry curvature dipoles than the more common p-doped tellurium., Comment: 38 pages, 9 figures

Materials with Berry curvature dipoles (BDs) support a non-Hermitian electro-optic (EO) effect that is investigated here for lasing at terahertz (THz) frequencies. Such a system is here conceived as a stack of low-symmetry 2D materials. We show that a cavity made of such a material supports a nonreciprocal growing mode with elliptical polarization that generates an unstable resonance leading to self-sustained oscillations. Notably, we demonstrate that the chiral nature of the gain derived from the Berry dipole allows for the manipulation of the laser light's handedness by a simple reversal of the electric field bias.

We investigate a generalized multi-orbital tight-binding model on a triangular lattice, a system prevalent in a wide range of two-dimensional materials, and particularly relevant for simulating transition metal dichalcogenide monolayers. We show that the interplay between spin-orbit coupling and different symmetry-breaking mechanisms leads to the emergence of four distinct topological phases [Eck, P., \textit{et al.}, Phys. Rev. B, 107 (11), 115130 (2023)]. Remarkably, this interplay also triggers the orbital Hall effect with distinguished characteristics. Furthermore, by employing the Landauer-B\"uttiker formula, we establish that in the orbital Hall insulating phase, the orbital angular momentum is carried by edge states present in nanoribbons with specific terminations. We also show that, as expected, they do not have topological protection against the disorder of the edge states belonging to a first-order topological insulator.

Phosphorene, a monolayer of black phosphorus, is a two-dimensional material that lacks a multivalley structure in the Brillouin zone and has negligible spin-orbit coupling. This makes it a promising candidate for investigating the orbital Hall effect independently of the valley or spin Hall effects. To model phosphorene, we utilized a DFT-derived tight-binding Hamiltonian, which is constructed with the pseudo atomic orbital projection method. For that purpose, we use the PAOFLOW code with a newly implemented internal basis that provides a fairly good description of the phosphorene conduction bands. By employing linear response theory, we show that phosphorene exhibits a sizable orbital Hall effect with strong anisotropy in the orbital Hall conductivity for the out-of-plane orbital angular momentum component. The magnitude and sign of the conductivity depend upon the in-plane direction of the applied electric field. These distinctive features enable the observation of the orbital Hall effect in this material unambiguously. The effects of strain and of a perpendicularly applied electric field on the phosphorene orbital-Hall response are also explored. We show that a supplementary electric field applied perpendicular to the phosphorene layer in its conductive regime gives rise to an induced in-plane orbital magnetization., Comment: 8 pages, 5 figures

Photonic platforms invariant under parity ($\mathcal{P}$), time-reversal ($\mathcal{T}$), and duality ($\mathcal{D}$) can support topological phases analogous to those found in time-reversal invariant ${\mathbb{Z}_2}$ electronic systems with conserved spin. Here, we demonstrate the resilience of the underlying spin Chern phases against non-Hermitian effects, notably material dissipation. We identify that non-Hermitian, $\mathcal{P}\mathcal{D}$-symmetric, and reciprocal photonic insulators fall into two topologically distinct classes. Our analysis focuses on the topology of a $\mathcal{P}\mathcal{D}$-symmetric and reciprocal parallel-plate waveguide (PPW). We discover a critical loss level in the plates that marks a topological phase transition. The Hamiltonian of the $\mathcal{P}\mathcal{T}\mathcal{D}$-symmetric system is found to consist of an infinite direct sum of Kane-Mele type Hamiltonians with a common band gap. This structure leads to the topological charge of the waveguide being an ill-defined sum of integers due to the particle-hole symmetry. Each component of this series corresponds to a spin-polarized edge state. Our findings present a unique instance of a topological photonic system that can host an infinite number of edge states in its band gap.

The orbital magnetoelectric effect (OME) generically refers to the appearance of an orbital magnetization induced by an applied electric field. Here, we show that nanoribbons of transition metal dichalcogenides (TMDs) with zigzag (ZZ) edges may exhibit a sizeable OME activated by an electric field applied along the ribbons' axis. We examine nanoribbons extracted from a monolayer (1L) and a bilayer (2L) of MoS$_2$ in the trigonal (H) structural phase. Transverse profiles of the induced orbital angular momentum accumulations are calculated to first order in the longitudinally applied electric field. Our results show that close to the nanoribbon's edge-state crossings energy, the orbital angular momentum accumulations take place mainly around the ribbons' edges. They have two contributions: one arising from the orbital Hall effect (OHE) and the other consists in the OME. The former is transversely anti-symmetric with respect to the principal axis of the nanoribbon, whereas the latter is symmetric, and hence responsible for the resultant orbital magnetization induced in the system. We found that the orbital accumulation originating from the OHE for the 1L-nanoribbon is approximately half that of a 2L-nanoribbon. Furthermore, while the OME can reach fairly high values in 1L-TMD nanoribbons, it vanishes in the 2L ones that preserve spatial inversion symmetry.The microscopic features that justify our findings are also discussed., Comment: 17 pages, 19 figures

Graphene-based superlattices offer a new materials playground to exploit and control a higher number of electronic degrees of freedom, such as charge, spin, or valley for disruptive technologies. Recently, orbital effects, emerging in multivalley band structure lacking inversion symmetry, have been discussed as possible mechanisms for developing orbitronics. Here, we report non-local transport measurements in small gap hBN/graphene/hBN moir\'e superlattices which reveal very strong magnetic field-induced chiral response which is stable up to room temperature. The measured sign dependence of the non-local signal with respect to the magnetic field orientation clearly indicates the manifestation of emerging orbital magnetic moments. The interpretation of experimental data is well supported by numerical simulations, and the reported phenomenon stands as a formidable way of in-situ manipulation of the transverse flow of orbital information, that could enable the design of orbitronic devices., Comment: 5 pages, 5 figures and supplementary information

Semiconductor transistors are essential elements of electronic circuits as they enable, for example, the isolation or amplification of voltage signals. While conventional transistors are point-type (lumped-element) devices, it may be highly interesting to realize a distributed transistor-type optical response in a bulk material. Here, we show that low-symmetry two-dimensional metallic systems may be the ideal solution to implement such a distributed-transistor response. To this end, using the semiclassical Boltzmann equation approach, we characterize the optical conductivity of a two-dimensional material under a static electric bias. It is found that similar to the nonlinear Hall effect, the electron transport depends on the Berry curvature dipole. Our analysis reveals that the electro-optic effect modifies the optical conductivity of the material, breaking the electromagnetic reciprocity and yielding a dynamical response that imitates that of a transistor but in a distributed volume. Furthermore, the effective conductivity tensor can be non-Hermitian, opening the possibility of optical gain. To maximize the non-Hermitian response, we explore the specific case of strained twisted bilayer graphene. Our analysis reveals that the optical gain for incident light transmitted through the biased system depends on the light polarization, and can be quite large, especially for multilayer configurations.

Monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase have been recently classified as higher-order topological insulators (HOTI), protected by $C_3$ rotation symmetry. In addition, theoretical calculations show an orbital Hall plateau in the insulating gap of TMDs, characterized by an orbital Chern number. We explore the correlation between these two phenomena in TMD monolayers in two structural phases: the noncentrosymmetric 2H and the centrosymmetric 1T. Using density functional theory, we confirm the characteristics of 2H-TMDs and reveal that 1T-TMDs are identified by a $\mathbb{Z}_4$ topological invariant. As a result, when cut along appropriate directions, they host conducting edge-states, which cross their bulk energy-band gaps and can transport orbital angular momentum. Our linear response calculations thus indicate that the HOTI phase is accompanied by an orbital Hall effect. Using general symmetry arguments, we establish a connection between the two phenomena with potential implications for spin-orbitronics., Comment: 5 pages, 4 figures

Using an effective Dirac model, we study the orbital Hall effect (OHE) in bilayers of transition metal dichalcogenides with 2H stacking (2H-TMD). We use first-order perturbation theory in the interlayer coupling of the bilayer system to obtain analytical expressions for the orbital Hall conductivity in the linear response regime. We use two distinct descriptions of the orbital angular momentum (OAM) operator: The first one is the intra-atomic approximation that considers only the intrasite contribution to the OAM [Cysne et al. Phys. Rev. Lett. 126, 056601 (2021)]. The second one uses the Berry-phase formula of the orbital (valley) magnetic moment to describe the OAM operator [Bhowal and Vignale, Phys. Rev. B 103, 195309 (2021)]. This approach includes both intersite and intrasite contributions to the OAM. Our results suggest that the two approaches agree qualitatively in describing the OHE in bilayers of 2H-TMDs, although they present some quantitative differences. We also show that interlayer coupling plays an essential role in understanding the OHE in the unbiased bilayer of 2H-TMD. This coupling causes the Bloch states to become bonding (antibonding) combinations of states of individual layers, demanding the consideration of the non-Abelian structure of the orbital magnetic moment to the occurrence of OHE. As we discuss throughout the work, the emerging picture of transport of OAM in the unbiased bilayer of 2H-TMDs based on OHE is very different from the usual picture based on the valley Hall effect, shedding new lights on previous experimental results. We also discuss the effect of the inclusion of a gate-voltage bias in the bilayer system. Our work gives support to recent theoretical predictions on OHE in two-dimensional materials., Comment: 16 pages, 3 figures, 2 appendix

To calculate the conductivity of a material having full knowledge of its composition is a reasonably simple task. To do the same in reverse, i.e., to find information about the composition of a device from its conductivity response alone, is very challenging and even more so in the presence of disorder. An inversion methodology capable of decoding the information contained in the conductivity response of disordered structures has been recently proposed but despite claims of generality and robustness, the method has only been used with 2D systems possessing relatively simple electronic structures. Here we put these claims to the test and generalise the inversion method to the case of monolayer MoS$_2$, a material whose electronic structure is far more complex and elaborate. Starting from the spectral function that describes the DC conductivity of a disordered sample of a single layered MoS$_2$ containing a small concentration of randomly dispersed vacancies, we are able to invert the signal and find the exact composition of defects with an impressive degree of accuracy. Remarkably, equally accurate results are obtained with the optical conductivity. This is indicative of a methodology that is indeed suitable to extract composition information from different 2D materials, regardless of their electronic structure complexity. Calculated conductivity results were used as a proxy for their experimental counterpart and were obtained with an efficient quantum transport code (KITE) based on a real-space multi-orbital tight-binding model with parameters generated by density functional theory., Comment: Main: 7 pages, 3 figures Suplemental Material: 2 pages, 4 figures Accepted and in process of being published in New Journal of Physics

Graphene hybrids, made of thin insulators, graphene, and metals can support propagating acoustic plasmons (AGPs). The metal screening modifies the dispersion relation of usual graphene plasmons leading to slowly propagating plasmons, with record confinement of electromagnetic radiation. Here, we show that a graphene monolayer, covered by a thin dielectric material and an array of metallic nanorods can be used as a robust platform to emulate the Su-Schrieffer-Heeger model. We calculate the Zak's phase of the different plasmonic bands to characterise their topology. The system shows bulk-edge correspondence: strongly localized interface states are generated in the domain walls separating arrays in different topological phases. We find signatures of the nontrivial phase which can directly be probed by far-field mid-IR radiation, hence allowing a direct experimental confirmation of graphene topological plasmons. The robust field enhancement, highly localized nature of the interface states, and their gate-tuned frequencies expand the capabilities of AGP-based devices., Comment: 5 pages, 4 figures

Terahertz polarizers are essential for advanced spectroscopic systems but face challenges like low transmission, short bandwidths and low extinction ratios. This study demonstrates the development of ultrabroadband THz polarizers using nanoimprint lithography, achieving high performance through double-wire-grid polarizer (DWGP) structures on cyclic olefin copolymer (COC) substrates. Compared to silicon-based alternatives, the polymer DWGPs demonstrated over twice the TM-polarized transmittance across the 0.1 - 25 THz range. The degree of polarization exceeded 98% in a 0.1-16 THz range, with a maximum extinction ratio above 65.4 dB at 4.2 THz. Simultaneous characterization of materials using THz time-domain spectroscopy (THz-TDS) and Fourier-transform infrared spectroscopy (FTIR) covered extended frequency ranges of 0.1 - 40 THz and 0.9 - 20 THz, respectively. Nanofabricated polymer DWGP revealed the superior optical properties, including enhanced TM transmittance and reduced TE leakage when compared to Si DWGP. Additionally, the fabricated polymer polarizers showcased cost-effectiveness, scalability, and durability, offering a sustainable alternative to conventional Si-based polarizers. The significant developments demonstrated in this study position polymer-based DWGPs as significant components for THz imaging, sensing, and wireless communication systems, paving the way for next-generation technologies., Comment: 19 pages, 9 figures

Profiles of the spin and orbital angular momentum accumulations induced by a longitudinally applied electric field are explored in nanoribbons of $p$-band systems with a honeycomb lattice. We show that nanoribbons with zigzag borders can exhibit orbital magnetoelectric effects. More specifically, we have found that purely orbital magnetization oriented perpendicularly to the ribbon may be induced in these systems by means of the external electric field, when sublattice symmetry is broken. The effect is rather general and may occur in other multi-orbital materials., Comment: 10 pages, 4 figures

It has been recently shown that monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase exhibit relatively large orbital Hall conductivity plateaus within their energy band gaps, where their spin Hall conductivities vanish. However, since the valley Hall effect (VHE) in these systems also generates a transverse flow of orbital angular momentum it becomes experimentally challenging to distinguish between the two effects in these materials. The VHE requires inversion symmetry breaking to occur, which takes place in the TMD monolayers, but not in the bilayers. We show that a bilayer of 2H-MoS$_2$ is an orbital Hall insulator that exhibits a sizeable OHE in the absence of both spin and valley Hall effects. This phase can be characterised by an orbital Chern number that assumes the value $\mathcal{C}_{L}=2$ for the 2H-MoS$_2$ bilayer and $\mathcal{C}_{L}=1$ for the monolayer, confirming the topological nature of these orbital-Hall insulator systems. Our results are based on density functional theory (DFT) and low-energy effective model calculations and strongly suggest that bilayers of TMDs are highly suitable platforms for direct observation of the orbital Hall insulating phase in two-dimensional materials. Implications of our findings for attempts to observe the VHE in TMD bilayers are also discussed., Comment: 7 pages, 4 figures + Supplementary material

Plasmonic excitations such as surface-plasmon-polaritons (SPPs) and graphene-plasmons (GPs), carry large momenta and are thus able to confine electromagnetic fields to small dimensions. This property makes them ideal platforms for subwavelength optical control and manipulation at the nanoscale. The momenta of these plasmons are even further increased if a scheme of metal-insulator-metal and graphene-insulator-metal are used for SPPs and GPs, respectively. However, with such large momenta, their far-field excitation becomes challenging. In this work, we consider hybrids of graphene and metallic nanostructures and study the physical mechanisms behind the interaction of far-field light with the supported high momenta plasmon modes. While there are some similarities in the properties of GPs and SPPs, since both are of the plasmon-polariton type, their physical properties are also distinctly different. For GPs we find two different physical mechanism related to either GPs confined to isolated cavities, or large area collective grating couplers. Strikingly, we find that although the two systems are conceptually different, under specific conditions they can behave similarly. By applying the same study to SPPs, we find a different physical behavior, which fundamentally stems from the different dispersion relations of SPPs as compared to GPs. Furthermore, these hybrids produce large field enhancements that can also be electrically tuned and modulated making them the ideal candidates for a variety of plasmonic devices., Comment: 9 pages, 4 figures

Acoustic-graphene-plasmons (AGPs) are highly confined electromagnetic modes, carrying large momentum and low loss in the mid-infrared/Terahertz spectra. Owing to their ability to confine light to extremely small dimensions, they bear great potential for ultra-strong light-matter interactions in this long wavelength regime, where molecular fingerprints reside. However, until now AGPs have been restricted to micron-scale areas, reducing their confinement potential by several orders-of-magnitude. Here, by utilizing a new type of graphene-based magnetic-resonance, we realize single, nanometric-scale AGP cavities, reaching record-breaking mode-volume confinement factors of $\thicksim5\cdot10^{-10}$. This AGP cavity acts as a mid-infrared nanoantenna, which is efficiently excited from the far-field, and electrically tuneble over an ultra-broadband spectrum. Our approach provides a new platform for studying ultra-strong-coupling phenomena, such as chemical manipulation via vibrational-strong-coupling, and a path to efficient detectors and sensors, in this challenging spectral range.

We show that H-phase transition metal dichalcogenides (TMDs) monolayers such as MoS$_2$ and WSe$_2$, are orbital Hall insulators. They present very large orbital Hall conductivity plateaus in their semiconducting gap, where the spin Hall conductivity vanishes. Our results open the possibility of using TMDs for orbital current injection and orbital torque transfers that surpass their spin-counterparts in spin-orbitronics devices. The orbital Hall effect (OHE) in TMD monolayers occurs even in the absence of spin-orbit coupling. It can be linked to exotic momentum-space Dresselhaus-like orbital textures, analogous to the spin-momentum locking in 2D Dirac fermions that arise from a combination of orbital attributes and lattice symmetry., Comment: main text with 6 pages and 3 figures, and a Supplementary material

The orbital-Hall effect (OHE), similarly to the spin-Hall effect (SHE), refers to the creation of a transverse flow of orbital angular momentum that is induced by a longitudinally applied electric field. For systems in which the spin-orbit coupling (SOC) is sizeable, the orbital and spin angular momentum degrees of freedom are coupled, and an interrelationship between charge, spin and orbital angular momentum excitations is naturally established. The OHE has been explored mostly in metallic systems, where it can be quite strong. However, several of its features remain unexplored in two-dimensional (2D) materials. Here, we investigate the role of orbital textures for the OHE displayed by multi-orbital 2D materials. We predict the appearance of a rather large orbital Hall effect in these systems both in their metallic and insulating phases. In some cases, the orbital Hall currents are larger than the spin Hall ones, and their use as information carriers widens the development possibilities of novel spin-orbitronic devices.

The fabrication of bismuthene on top of SiC paved the way for substrate engineering of room temperature quantum spin Hall insulators made of group V atoms. We perform large-scale quantum transport calculations in these 2d materials to analyse the rich phenomenology that arises from the interplay between topology, disorder, valley and spin degrees of freedom. For this purpose, we consider a minimal multi-orbital real-space tight-binding hamiltonian and use a Chebyshev polynomial expansion technique. We discuss how the quantum spin Hall states are affected by disorder, sublattice resolved potential and Rashba spin-orbit coupling.

The Haldane model on a honeycomb lattice is a paradigmatic example of a system featuring quantized Hall conductivity in the absence of an external magnetic field, that is, a quantum anomalous Hall effect. Recent theoretical work predicted that the anomalous Hall conductivity of massive Dirac fermions can display Shubnikov-de Haas (SdH) oscillations, which could be observed in topological insulators and honeycomb layers with strong spin--orbit coupling. Here, we investigate the electronic transport properties of Chern insulators subject to high magnetic fields by means of accurate spectral expansions of lattice Green's functions. We find that the anomalous component of the Hall conductivity displays visible SdH oscillations at low temperature. \textcolor{black}{The effect is shown to result from the modulation of the next-nearest neighbour flux accumulation due to the Haldane term,} which removes the electron--hole symmetry from the Landau spectrum. To support our numerical findings, we derive a long-wavelength description beyond the linear ('Dirac cone') approximation. Finally, we discuss the dependence of the energy spectra shift for reversed magnetic fields with the topological gap and the lattice bandwidth.

We consider theoretically the influence of crystalline fields on the electronic structure of graphene placed on a layered material with reduced symmetry and large spin-orbit coupling (SOC). We use a perturbative procedure combined with the Slater-Koster method to derive the low-energy effective Hamiltonian around the $K$ points and estimate the magnitude of the effective couplings. Two simple models for the envisaged graphene-substrate hybrid bilayer are considered, in which the relevant atomic orbitals hybridize with either top or hollow sites of the graphene honeycomb lattice. In both cases, the interlayer coupling to a crystal-field-split substrate is found to generate highly anisotropic proximity spin-orbit interactions, including in-plane 'spin-valley' coupling. Interestingly, when an anisotropic intrinsic-type SOC becomes sizeable, the bilayer system is effectively a quantum spin Hall insulator characterized by in-plane helical edge states robust against Bychkov-Rashba effect. Finally, we discuss the type of substrate required to achieve anisotropic proximity-induced SOC and suggest possible candidates to further explore crystal field effects in graphene-based heterostructures., Comment: 9 pages, 5 figures

We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). By analysing the spin-splitting of the quantum Hall states as a function of magnetic field and gate-voltage, we obtain different scaling laws that can be used to characterise the spin-orbit coupling in experiments. Furthermore, we employ a real-space quantum transport approach to calculate the quantum Hall conductivity and investigate the robustness of the QHE to disorder introduced by hydrogen impurities. For that purpose, we combine first-principles calculations and a genetic algorithm strategy to obtain a graphene-only Hamiltonian that models the impurity.

We consider spin-dependent scatterers with large scattering cross-sections in graphene -a Zeeman-like and an intrinsic spin-orbit coupling impurity- and show that a gated ring around them can be engineered to produce an effcient control of the spin dependent transport, like current spin polarization and spin Hall angle. Our analysis is based on a spin-dependent partial-waves expansion of the electronic wave-functions in the continuum approximation, described by the Dirac equation., Comment: 9 pages, 8 figures

Theoretical predictions and recent experimental results suggest one can engineer spin Hall effect in graphene by enhancing the spin-orbit coupling in the vicinity of an impurity. We use a Chebyshev expansion of the Kubo-Bastin formula to compute the spin conductivity tensor for a tight-binding model of graphene with randomly distributed impurities absorbed on top of carbon atoms. We model the impurity-induced spin-orbit coupling with a graphene-only Hamiltonian that takes into account three different contributions~\cite{Gmitra2013} and show how the spin Hall and longitudinal conductivities depend on the strength of each spin-orbit coupling and the concentration of impurities. Additionally, we calculate the real-space projection of the density of states in the vicinity of the Dirac point for single and multiple impurities and correlate these results with the conductivity calculations., Comment: 8 pages, 8 figures

We consider resonant scatterers with large scattering cross-sections in graphene that are produced by a gated disk or a vacancy, and show that a gated ring can be engineered to produce an efficient electron cloak. We also demonstrate that this same scheme can be applied to tune the direction of electron flow. Our analysis is based on a partial-wave expansion of the electronic wave-functions in the continuum approximation, described by the Dirac equation. Using a symmetrized version of the massless Dirac equation, we derive a general condition for the cloaking of a scatterer by a potential with radial symmetry. We also perform tight-binding calculations to show that our findings are robust against the presence of disorder in the gate potential., Comment: 11 pages

We describe an efficient numerical approach to calculate the longitudinal and transverse Kubo conductivities of large systems using Bastin's formulation. We expand the Green's functions in terms of Chebyshev polynomials and compute the conductivity tensor for any temperature and chemical potential in a single step. To illustrate the power and generality of the approach, we calculate the conductivity tensor for the quantum Hall effect in disordered graphene and analyze the effect of the disorder in a Chern insulator in Haldane's model on a honeycomb lattice., Comment: 5 pages, 3 figures and a supplementary material (3 pages)

We address the nature of the disordered state that results from the adsorption of adatoms in graphene. For adatoms that sit at the center of the honeycomb plaquette, as in the case of most transition metals, we show that the ones that form a zero-energy resonant state lead to Anderson localization in the vicinity of the Dirac point. Among those, we show that there is a symmetry class of adatoms where Anderson localization is suppressed, leading to an exotic metallic state with large and rare charge droplets, that localizes only at the Dirac point. We identify the experimental conditions for the observation of the Anderson transition for adatoms in graphene., Comment: 8 pages, 5 figures, 2 appendixes, Final version

We investigate the effect of temperature on the dynamic properties of magnetic vortices in small disks. Our calculations use a stochastic version of the Landau-Lifshitz-Gilbert (LLG) equation, valid for finite temperatures well below the Curie critical temperature. We show that a finite temperature induces a vortex precession around the center of the disk, even in the absence of other excitation sources. We discuss the origin and implications of the appearance of this new dynamics. We also show that a temperature gradient plays a role similar to that of a small constant magnetic field., Comment: 4 pages, 3 figures

We developed a method to calculate the magnetoresistance of magnetic nanostructures. We discretize a magnetic disk in small cells and numerically solve the Landau-Lifshitz-Gilbert (LLG) equation in order to obtain its magnetization profile. We consider a anisotropic magnetoresistance (AMR) that depends on the local magnetization as the main source of the magnetoresistance. We then use it as an input to calculate the resistance and current distribution numerically, using a relaxation method. We show how magnetoresistance measurements can be useful to obtain information on the magnetic structure. Additionally, we obtain non-homogeneous current distributions for different magnetic configurations in static and dynamical regimes., Comment: 6 pages, 6 figures

We investigate the effect of single and multiple impurities on the Zeeman-localized, spin polarized bound states in dilute magnetic semiconductor hybrid system. Such bound states appear whenever a dilute magnetic semiconductor showing giant Zeeman effect is exposed to an external magnetic field showing nanoscale inhomogeneity. We consider the specific example of a superconductor-dilute magnetic semiconductor hybrid, calculate the energy spectrum and the wave functions of the bound states in the presence of a single impurity, and monitor the evolution of the bound state as a function of the impurity strength and impurity location with respect to the center of the Zeeman trapping potential. Our results have important experimental implications as they predict robust spin textures even for than than ideal samples. We find that for all realistic impurity strengths the Zeeman bound state survives the presence of the impurity. We also investigate the effect of a large number of impurities and perform ensemble averages with respect to the impurity locations. We find that the spin polarized Zeeman bound states are very robust, and they remain bound to the external field inhomogeneity throughout the experimentally relevant region of impurity concentration and scattering strength., Comment: 9 pages, 9 figures. submitted to Physical Review B

We investigate the effect of the magnetic anisotropy ($K_z$) on the static and dynamic properties of magnetic vortices in small disks. Our micromagnetic calculations reveal that for a range of $K_z$ there is an enlargement of the vortex core. We analyze the influence of $K_z$ on the dynamics of the vortex core magnetization reversal under the excitation of a pulsed field. The presence of $K_z$, which leads to better resolved vortex structures, allows us to discuss in more details the role played by the in-plane and perpendicular components of the gyrotropic field during the vortex-antivortex nucleation and annihilation., Comment: 4 pages, 4 figures

We explore the possibility of using the inhomogeneous magnetic field carried by an Abrikosov vortex in a type-II superconductor to localize spin-polarized textures in a nearby magnetic semiconductor quantum well. We show how Zeeman-induced localization induced by a single vortex is indeed possible, and use these results to investigate the effect of a periodic vortex array on the transport properties of the magnetic semiconductor. In particular, we find an unconventional Integer Quantum Hall regime, and predict directly testable experimental consequences due to the presence of the periodic spin polarized structure induced by the superconducting vortex lattice in the magnetic semiconductor., Comment: 12 pages, 15 figures

The continuous need for miniaturization and increase in device speed exerts pressureon the electronics industry to explore new avenues of information processing. One possibility is to use the spin to store, manipulate and carry information. Indeed,spintronics may hold the promise of providing such a new paradigm. However, all spintronics applications are faced with formidable challenges in attempting to find fastand efficient ways to create, transport, detect, control and manipulate spin textures and currents. Here we show how most of these operations can be performed in arelatively simple manner in a hybrid system consisting of a superconducting (SC) film and a paramagnetic diluted magnetic semiconductor (DMS) quantum well (QW). Ourproposal is based on the observation that the inhomogeneous magnetic fields of the SC create local spin and charge textures in the DMS, leading to effects such as Blochoscillations, an unusual Quantum Hall Effect, etc. We exploit the recent progress in manipulating magnetic flux bundles (vortices) in superconductors and show howthese can create, manipulate and control the spin textures in DMS., Comment: 13 pages, 4 figures

The effect of strong disorder on the one-dimensional Kondo necklace model is studied using a perturbative real-space renormalization group approach which becomes asymptotically exact in the low energy limit. The phase diagram of the model presents a random quantum critical point separating two phases; the {\em random singlet phase} of a quantum disordered XY chain and the random Kondo phase. We also consider an anisotropic version of the model and show that it maps on the strongly disordered transverse Ising model. The present results provide a rigorous microscopic basis for non-Fermi liquid behavior in disordered heavy fermions due to Griffiths phases., Comment: 4 pages, 4 figures

In this paper we investigate the magnetic properties of heavy fermions in the antiferromagnetic and dense Kondo phases in the framework of the Kondo necklace model. We use a mean field renormalization group approach to obtain a temperature versus Kondo coupling $(T-J)$ phase diagram for this model in qualitative agreement with Doniach's diagram, proposed on physical grounds. We further analyze the magnetically disordered phase using a two-sites approach. We calculate the correlation functions and the magnetic susceptibility that allow to identify the crossover between the spin-liquid and the local moment regimes, which occurs at a {\em coherence} temperature., Comment: 5 figures

We study the influence of short range antiferromagnetic correlations between local $f$-electrons on the transport and thermodynamic properties of Kondo insulators, as first proposed by Coqblin et al. for metallic heavy fermions. The inter-site magnetic correlations produce an effective bandwidth for the $f$-electrons. They are treated on the same footing as the local Kondo correlations such that two energy scales appear in our approach. We discuss the competition between these two scales on the physical properties., Comment: 13 pages, 13 figures. To be published in Physics Letters A