1. Interpreting the Presence of an Additional Oxide Layer in Analysis of Metal Oxides–Metal Interfaces in Atom Probe Tomography
- Author
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Mukesh Bachhav, Beatrice Hannoyer, Emmanuelle A. Marquis, Raphaële Danoix, Gorakh Pawar, Yan Dong, François Vurpillot, Frédéric Danoix, Idaho National Laboratory (INL), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), University of Michigan [Ann Arbor], University of Michigan System, Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), and Normandie Université (NU)
- Subjects
Materials science ,Thin layer ,Oxide ,chemistry.chemical_element ,02 engineering and technology ,Atom probe ,010402 general chemistry ,01 natural sciences ,Oxygen ,law.invention ,Metal ,chemistry.chemical_compound ,law ,Physical and Theoretical Chemistry ,business.industry ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,General Energy ,chemistry ,visual_art ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,visual_art.visual_art_medium ,Optoelectronics ,0210 nano-technology ,business ,Layer (electronics) - Abstract
International audience; Atom Probe Tomography (APT) analysis of specimens embedded with metal oxide/metal leads to nonintuitive observations of a very thin layer of oxide at the interface due to oxygen migration under the influence of electric field in metal oxides. Detailed analyses of the FeO/Fe and ZrO2/ZrO interfaces are presented, explaining observation of the interfacial oxide layer with APT. These findings are relevant to the observation made for APT analysis of devices such as resistive switching, solar cells, oxides grown on metal/alloy during oxidation and corrosion wherein metal oxide is in interface with metallic layers. Because the APT technique is based on the application of an electric field on the oxide/metal interface, oxygen ions are driven toward the metal electrode and leads to a reaction with the metal and the formation of the additional interfacial oxide layer. Atomistic simulation performed on the FeO/Fe layer subjected to electric field confirms finding of oxygen migration from the oxide layer toward the oxide/metal interface.
- Published
- 2018
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