98 results on '"Ran, Junxue"'
Search Results
2. Strain-induced polarization modulation at GaN/Ti interface for flexible thin-film sensor
3. Flow Modulation Epitaxy of Thick Boron Nitride Epilayers and Wafer-Level Exfoliation
4. Selective area grown photonic integrated chips for completely suppressing the Stokes shift.
5. Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration.
6. Controlled exfoliation of wafer-scale single-crystalline AlN film on MOCVD-grown layered h-BN.
7. Near vacuum-ultraviolet aperiodic oscillation emission of AlN films
8. High-Temperature Annealing Assisted High-Quality Semipolar (112̅2) AlN Film for Vacuum Ultraviolet Detectors.
9. Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures.
10. Strain modulated luminescence in green InGaN/GaN multiple quantum wells with microwire array by piezo-phototronic effect
11. Temperature-dependent current transport in quasi-vertical Pt/AlN/Al0.6Ga0.4N heterostructure Schottky barrier diodes with significant improved forward characteristic
12. Three dimensional truncated-hexagonal-pyramid vertical InGaN-based white light emitting diodes based on β-Ga2O3
13. Improved barrier homogeneity in Pt/Al0.75Ga0.25N Schottky barrier diodes by graphene interlayer
14. Semipolar (11–22) AlN Grown on m-Plane Sapphire by Flow-Rate Modulation Epitaxy for Vacuum-Ultraviolet Photodetection
15. Temperature-dependent current transport in quasi-vertical Pt/AlN/Al0.6Ga0.4N heterostructure Schottky barrier diodes with significant improved forward characteristic.
16. Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD
17. Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD
18. The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure
19. The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD
20. Growth temperature dependences of InN films grown by MOCVD
21. Structural and optical properties of Al x Ga1 − x N/Al y Ga1 − y N multiple quantum wells for deep ultraviolet emission
22. Al x Ga1-x N solar-blind photodetectors grown by low pressure MOCVD
23. Characteristics of high Al content AlxGa1−xN grown by metalorganic chemical vapor deposition
24. AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD
25. MOCVD-grown high-mobility Al 0.3Ga 0.7N/AlN/GaN HEMT structure on sapphire substrate
26. Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD
27. Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates
28. Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD
29. Deep-ultraviolet aperiodic-oscillation emission of AlGaN films
30. Vacuum-Ultraviolet Photovoltaic Detector
31. Producing deep UV-LEDs in high-yield MOVPE by improving AlN crystal quality with sputtered AlN nucleation layer
32. Neutron Irradiation Effect in Two-Dimensional Electron Gas of AlGaN/GaN Heterostructures
33. Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes
34. Growth and Characterization of AlGaN/AlN/GaN HEMT Structures with a Compositionally Step-Graded AlGaN Barrier Layer
35. The difference of Si doping efficiency in GaN and AlGaN in GaN‐based HBT structure
36. Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices
37. High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system
38. High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system
39. Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD
40. Theoretical design and performance of InxGa1−xN two-junction solar cells
41. Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD
42. AlGaN/GaN/InGaN/GaN DH‐HEMTs structure with an AlN interlayer grown by MOCVD
43. Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
44. The influence of 1nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure
45. Properties of Al y Ga 1– y N/Al x Ga 1– x N/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure
46. Photovoltaic effects in InGaN structures with p-n junctions
47. Structural and optical properties of InGaN/GaN multiple quantum wells structure for ultraviolet emission
48. Simulation of In0.65Ga0.35N single-junction solar cell
49. MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate
50. MOCVD grown AlGaN/AlN/GaN HEMT structure with compositionally step-graded AlGaN barrier layer
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.