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For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of breakdown performance of planar GaN-on-Si MOS capacitors. The analysis is carried out on capacitors processed on different GaN bulk doping (6E18 Si/cc, 6E17 Si/cc and 2.5E18 Mg/cc, p-type), different structures (planar, trench-like) and different geometries (area, perimeter and shape). We demonstrate that (i) capacitors on p-GaN have better breakdown performance; (ii) the presence of a trench structure significantly reduces breakdown capabilities; (iii) breakdown voltage is dependent on area, with a decreasing robustness for increasing dimensions; (iv) breakdown voltage is independent of shape (rectangular, circular). TCAD simulations, in agreement with the measurements, illustrate the electric field distribution near breakdown and clarify the results obtained experimentally., Comment: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][Research for GaN technologies, devices, packages and applications to address the challenges of the future GaN roadmap][UltimateGaN][826392]

The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and 24 hours stress tests. Firstly, DC and EL characterization at room temperature are summarized, then the parametric evolution during hot-electron step stress tests at the semi-on state was compared, the assumption for the degradation mechanism is that hot-electrons activated the pre-existing traps in the buffer, attenuate the electric field in the gate drain access region and damaging the gate contact, the parametric evolution during constant stresses is discussed., Comment: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][EUGANIC][EDA Contract B 1447 IAP1 GP][5G_GaN_2]

The reliability of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration was investigated by means of different stress tests. Firstly, DC and pulsed I-V characterization at room temperature are discussed, then drain step stress tests at different gate voltages are compared, afterwards, the constant stress at different bias points are discussed. Results show that the high C HEMTs showed reduced DIBL, smaller leakage current, as well as decreased electric field, leading to an improved robustness during on-state stress testing, with respect to the reference ones. Failure modes during constant voltage stress consists in a decrease of drain current and transconductance, accelerated by temperature and electric field., Comment: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][EUGANIC][EDA Contract B 1447 IAP1 GP][5G_GaN_2]

We consider an exit-time minimum problem with a running cost, $l\geq 0$ and unbounded controls. The occurrence of points where $l=0$ can be regarded as a transversality loss. Furthermore, since controls range over unbounded sets, the family of admissible trajectories may lack important compactness properties. In the first part of the paper we show that the existence of a $p_0$-minimum restraint function provides not only global asymptotic controllability (despite non-transversality) but also a state-dependent upper bound for the value function (provided $p_0>0$). This extends to unbounded dynamics a former result which heavily relied on the compactness of the control set. In the second part of the paper we apply the general result to the case when the system is polynomial in the control variable. Some elementary, algebraic, properties of the convex hull of vector-valued polynomials' ranges allow some simplifications of the main result, in terms of either near-affine-control systems or reduction to weak subsystems for the original dynamics., Comment: arXiv admin note: text overlap with arXiv:1503.03448

The paper analyzes a Lagrangian system which is controlled by directly assigning some of the coordinates as functions of time, by means of frictionless constraints. In a natural system of coordinates, the equations of motions contain terms which are linear or quadratic w.r.t.time derivatives of the control functions. After reviewing the basic equations, we explain the significance of the quadratic terms, related to geodesics orthogonal to a given foliation. We then study the problem of stabilization of the system to a given point, by means of oscillating controls. This problem is first reduced to the weak stability for a related convex-valued differential inclusion, then studied by Lyapunov functions methods. In the last sections, we illustrate the results by means of various mechanical examples., Comment: 52 pages, 4 figures