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225 results on '"Ramdane, Abderrahim"'

1. Noise-induced broadening of a quantum-dash laser optical frequency comb

Author

Borodkin, Aleksei I., Kovalev, Anton V., Giudici, Massimo, Huyet, Guillaume, Ramdane, Abderrahim, Marconi, Mathias, and Viktorov, Evgeny A.

Subjects
Physics - Optics
Abstract

Single-section quantum dash semiconductor lasers have attracted much attention as an integrated and simple platform for the generation of THz-wide and flat optical frequency combs in the telecom C-band. In this work, we present an experimental method allowing to increase the spectral width of the laser comb by the injection of a broadband optical noise from an external semiconductor optical amplifier that is spectrally overlapped with the quantum dash laser comb. The noise injection induces an amplification of the side modes of the laser comb which acquire a fixed phase relationship with the central modes of the comb. We demonstrate a broadening of the laser comb by a factor of two via this technique., Comment: 4 pages, 4 figures

Published
2023
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2. Coherent WDM transmission using quantum-dash mode-locked laser diodes as multi-wavelength source and local oscillator

Author

Kemal, Juned N., Marin-Palomo, Pablo, Panapakkam, Vivek, Trocha, Philipp, Wolf, Stefan, Merghem, Kamel, Lelarge, Francois, Ramdane, Abderrahim, Randel, Sebastian, Freude, Wolfgang, and Koos, Christian

Subjects
Physics - Applied Physics, Electrical Engineering and Systems Science - Signal Processing, Physics - Optics
Abstract

Quantum-dash (QD) mode-locked laser diodes (MLLD) lend themselves as chip-scale frequency comb generators for highly scalable wavelength-division multiplexing (WDM) links in future data-center, campus-area, or metropolitan networks. Driven by a simple DC current, the devices generate flat broadband frequency combs, containing tens of equidistant optical tones with line spacings of tens of GHz. Here we show that QD-MLLDs can not only be used as multi-wavelength light sources at a WDM transmitter, but also as multi-wavelength local oscillators (LO) for parallel coherent reception. In our experiments, we demonstrate transmission of an aggregate data rate of 4.1 Tbit/s (23x45 GBd PDM-QPSK) over 75 km standard single-mode fiber (SSMF). To the best of our knowledge, this represents the first demonstration of a coherent WDM link that relies on QD-MLLD both at the transmitter and the receiver.

Published
2019
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3. Comb-based WDM transmission at 10 Tbit/s using a DC-driven quantum-dash mode-locked laser diode

Author

Marin-Palomo, Pablo, Kemal, Juned N., Trocha, Philipp, Wolf, Stefan, Merghem, Kamel, Lelarge, François, Ramdane, Abderrahim, Freude, Wolfgang, Randel, Sebastian, and Koos, Christian

Subjects
Electrical Engineering and Systems Science - Signal Processing, Physics - Optics
Abstract

Chip-scale frequency comb generators have the potential to become key building blocks of compact wavelength-division multiplexing (WDM) transceivers in future metropolitan or campus-area networks. Among the various comb generator concepts, quantum-dash (QD) mode-locked laser diodes (MLLD) stand out as a particularly promising option, combining small footprint with simple operation by a DC current and offering flat broadband comb spectra. However, the data transmission performance achieved with QD-MLLD was so far limited by strong phase noise of the individual comb tones, restricting experiments to rather simple modulation formats such as quadrature phase shift keying (QPSK) or requiring hard-ware-based compensation schemes. Here we demonstrate that these limitations can be over-come by digital symbol-wise phase tracking algorithms, avoiding any hardware-based phase-noise compensation. We demonstrate 16QAM dual-polarization WDM transmission on 38 channels at an aggregate net data rate of 10.68 Tbit/s over 75 km of standard single-mode fiber. To the best of our knowledge, this corresponds to the highest data rate achieved through a DC-driven chip-scale comb generator without any hardware-based phase-noise reduction schemes.

Published
2019
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4. A multi-GHz chaotic optoelectronic oscillator based on laser terminal voltage

Author

Chang, C. Y., Choi, Daeyoung, Locquet, A., Merghem, Michael J. Wishon K., Ramdane, Abderrahim, Lelarge, Francois, Martinez, A., and Citrin, D. S.

Subjects
Physics - Applied Physics
Abstract

A multi-GHz chaotic optoelectronic oscillator based on an external cavity semiconductor laser (ECL) is demonstrated. Unlike standard optoelectronic oscillators for microwave applications, we do not employ the dynamic light output incident on a photodiode to generate the microwave signal, but instead generate the microwave signal directly by measuring the terminal voltage V (t) of the laser diode of the ECL under constant-current operation, thus obviating the photodiode entirely.

Published
2017
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5. Tunable X-band optoelectronic oscillators based on external-cavity semiconductor lasers

Author

Chang, C. Y., Wishon, Michael J., Choi, Daeyoung, Dong, Junliang, Merghem, K., Ramdane, Abderrahim, Lelarge, Francois, Martinez, A., Locquet, A., and Citrin, D. S.

Subjects
Physics - Applied Physics
Abstract

Laser diodes with optical feedback can exhibit periodic intensity oscillations at or near the relaxation-oscillation frequency. We demonstrate optoelectronic oscillators based on external-cavity semiconductor lasers in a periodic dynamical regime tunable over the entire X-band. Moreover, unlike standard optoelectronic oscillators, we need not employ the time-dependent optical intensity incident on a photodiode to generate the microwave signal, but rather have the option of generating the electrical microwave signal directly as a voltage $V(t)$ at the laser-diode injection terminals under constant current operation; no photodiode need be involved, thus circumventing optical-to-electrical conversion. We achieve a timing jitter of $\lesssim 10$ ps and a quality factor of $\gtrsim 2\times 10^5$ across the entire X-band, that ranges from 6.79 GHz to 11.48 GHz. Tuning is achieved by varying the injection current $J$.

Published
2017
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8. Electrically injected parity-time symmetric distributed feedback laser diodes (DFB) for telecom applications

Author

Brac de la Perrière Vincent, Gaimard Quentin, Benisty Henri, Ramdane Abderrahim, and Lupu Anatole

Subjects
complex-coupled laser diodes, distributed feedback lasers, optical feedback, parity-time symmetry, Physics, QC1-999
Abstract

The new paradigm of parity-time symmetry in quantum mechanics has readily been applied in the field of optics with numerous demonstrations of exotic properties in photonic systems. In this work, we report on the implementation of single frequency electrically injected distributed feedback (DFB) laser diodes based on parity-time symmetric dual gratings in a standard ridge waveguide configuration. We demonstrate enhanced modal discrimination for these devices as compared with index or gain coupled ones, fabricated in the same technology run. Optical transmission probing experiments further show asymmetric amplification in the light propagation confirming the parity-time symmetry signature of unidirectional light behavior. Another asset of these complex coupled devices is further highlighted in terms of robustness to optical feedback.

Published
2021
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9. Towards a monolithic optical cavity for atom detection and manipulation

Author

Gleyzes, Sébastien, Amili, Abdelkrim El, Cornelussen, Ronald, Lalanne, Philippe, Westbrook, Christoph I, Aspect, Alain, Estève, Jérôme, Moreau, Gauthier, Martinez, Antony, Lafosse, Xavier, Ferlazzo, Laurence, Harmand, Jean-Christophe, Mailly, Dominique, and Ramdane, Abderrahim

Subjects
Quantum Physics
Abstract

We study a Fabry-Perot cavity formed from a ridge waveguide on a AlGaAs substrate. We experimentally determined the propagation losses in the waveguide at 780 nm, the wavelength of Rb atoms. We have also made a numerical and analytical estimate of the losses induced by the presence of the gap which would allow the interaction of cold atoms with the cavity field. We found that the intrinsic finesse of the gapped cavity can be on the order of F ~ 30, which, when one takes into account the losses due to mirror transmission, corresponds to a cooperativity parameter for our system C ~ 1.

Published
2009
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14. Fabrication of μLEDS for light fidelity optical transmission

Author

Dogheche, Karim, Alshehri, Bandar, ABDULRAHMANE, Namarig Taha, Ramdane, Abderrahim, Dogheche, El Hadj, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Optoélectronique - IEMN (OPTO - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], [SPI]Engineering Sciences [physics], LED, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, photonics, Gallium nitride, light fidelity
Abstract

International audience; The recent years have announced the emergence of novel photonic technologies based on III-nitrides semiconductors. Gathering the progress in materials maturity and the advance in manufacturing process, Solid-State Lighting based upon GaN-based light-emitting diodes (LEDs) has emerged as one the dominant technology for indoor/outdoor lighting as in hospital and transportation. In addition, the opportunity to apply LED for indoor/outdoor communication is a research innovation for the community. We have developed the proper design and the clean room fabrication of micro sized visible LEDs based on InGaN/GaN multiple quantum wells (MQWs) grown on sapphire substrates. A PIN configuration is selected for the design. Global experiments have been conducted by reducing the LED dimension (from 300 to 5μm) to lower the capacitance, the internal electric field of InGaN MQWs and therefore to increase the LED’s emission efficiency. Optical and electrical characterizations of the fabricated samples have performed to extract the cut-off frequency. Measurements are performed under reverse bias both in the dark and under illumination by a laser source. Experimental results have demonstrated that a frequency bandwidth of respectively 300MHz and 1.5GHz could be attain for a 100μm and 25μm size structures.

Published
2021

15. High-performance InP-based quantum dash semiconductor mode-locked lasers for optical communications

Author

Duan, Guang-Hua, Shen, Alexandre, Akrout, Akram, Dijk, Frederic van, Lelarge, Francois, Pommereau, Frederic, LeGouezigou, Odile, Provost, Jean-Guy, Gariah, Harry, Blache, Fabrice, Mallecot, Franck, Merghem, Kamel, Martinez, Anthony, and Ramdane, Abderrahim

Subjects
Semiconductor lasers -- Research, Laser communication systems -- Research, Indium -- Research, Laser and infrared communication, Science and technology, Telecommunications industry
Abstract

Indium phosphide-based quantu m dash mode-locked lasers designed for optical telecomunications applications are designed. These generate picosecond pulses at different repetition frequencies with low timing jitter and can be used to achieve all-optical clock recovery.

Published
2009

16. Electrically injected parity-time symmetric DFB lasers for telecom applications

Author

Brac de la Perrière, Vincent, Gaimard, Quentin, Benisty, Henri, Ramdane, Abderrahim, Lupu, Anatole, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and Institut d'Optique Graduate School (IOGS)

Subjects
complex coupled laser diodes, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], distributed feedback lasers, Physics::Optics, parity-time symmetry, optical feedback
Abstract

International audience; The new paradigm of parity-time symmetry in quantum mechanics has readily been applied in the field of optics with numerous demonstrations of exotic properties in photonic systems. In this work we report on the implementation of single frequency electrically injected DFB lasers based on Parity-Time symmetric dual gratings in a standard ridge waveguide configuration. We demonstrate enhanced modal discrimination for these devices as compared with index or gain coupled ones, fabricated in the same technology run. Optical transmission probing experiments further show asymmetric amplification in the light propagation confirming the Parity-Time symmetry signature of unidirectional light behavior. Another asset of these complex coupled devices is further highlighted in terms of robustness to optical feedback.

Published
2021
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17. Electrical injection-locking dynamics of a frequency-modulated comb

Author

Ossiander, Marcus, primary, Auth, Dominik, additional, Hillbrand, Johannes, additional, Gaimard, Quentin, additional, Kazakov, Dmitry, additional, Piccardo, Marco, additional, Ramdane, Abderrahim, additional, Capasso, Federico, additional, Schwarz, Benedikt, additional, and Breuer, Stefan, additional

Published
2021
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20. Electrically injection-locked quantum dash frequency-modulated comb

Author

Ossiander, Marcus, primary, Auth, Dominik, additional, Hillbrand, Johannes, additional, Gaimard, Quentin, additional, Kazakov, Dmitry, additional, Piccardo, Marco, additional, Ramdane, Abderrahim, additional, Capasso, Federico, additional, Schwarz, Benedikt, additional, and Breuer, Stefan, additional

Published
2021
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21. Mode Locked Laser Phase Noise Reduction Under Optical Feedback for Coherent DWDM Communication

Author

Verolet, Theo, primary, Aubin, Guy, additional, Lin, Yi, additional, Browning, Colm, additional, Merghem, Kamel, additional, Lelarge, Francois, additional, Calo, Cosimo, additional, Delmade, Amol, additional, Mekhazni, Karim, additional, Giacoumidis, Elias, additional, Shen, Alexandre, additional, Barry, Liam, additional, and Ramdane, Abderrahim, additional

Published
2020
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25. Phonon scattering by impurities in semiconductors

Author

Ramdane, Abderrahim

Subjects
530, QC170 Atomic physics. Constitution and properties of matter
Abstract

Thermal conductivity measurements have been used to study the low lying energy levels of Cr ions in GaAs. Strong resonant phonon scattering was observed in semi-insulating (SI) and p-type samples, which is attributed to Cr 2+ or Cr 3+ ions, while the scattering in the n-type samples additional to that in undoped material was very small. From the computer fits of the thermal conductivity, zero-field ground state splittings have been deduced. A splitting at ~ 23 cm -1 is attributed to Cr 3+ ions, others at ~ 0.7 cm and 4.9 cm are due to Cr 2+. The phonon scattering in the n-type samples did not show any magnetic field dependence while big effects were observed in SI and p-type ones. This seems consistent with the results of the zero-field work. The effect of uniaxial stress on the phonon scattering has been measured in the temperature range ~2-15 K. Again no effects were seen in n-type material. The results for SI and p-type material are interpreted in terms of a static Jahn-Tellereffect of Cr 2+ ions. A preliminary investigation was made of the effect on the phonon scattering of sub-band-gap illumination. In an-type sample, the decay in the increase in the thermal resistivity produced by photoexcitation showed two parts. The first part with a characteristic time of ~ 1 hour is attributed to electron-capture at Cr 2+ ions. The second decay was very slow (persistent) with a characteristic time T » 10 5 s. This effect has tentatively been attributed to the occurrence of large lattice relaxation. The phonon scattering by the Cr ions is found to be consistent with the 'double acceptor' model for Cr in GaAs. Another model where er can act as a hole trap is discussed. Finally the effect of high magnetic fields on the thermal conductivity of acceptors in Ge was measured. From this and previous results, the g-values describing the ra8 ground state were found to be much lower than the predicted ones. A Thermally Detected EPR apparatus was designed and constructed in an attempt to check on the ground state structure of p-Ge and also p-Si but no results were obtained. This is believed to be due to the very large line widths resulting from strain splitting of the ra8 ground state.

Published
1980

26. Electro-optical analysis of 30% InGaN/GaN MQW LED devices

Author

Bozkurt, Kutsal, Özdemir, Orhan, Kuruoğlu, Neslihan Ayarci, Alshehri, Bandar, Dogheche, Karim, Gaimard, Quentin, Ramdane, Abderrahim, Dogheche, El Hadj, Yildiz Technical University (YTU), Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Optoélectronique - IEMN (OPTO - IEMN)

Subjects
[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], [SPI]Engineering Sciences [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

27. Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings.

Author

Papatryfonos, Konstantinos, Saladukha, Dzianis, Merghem, Kamel, Joshi, Siddharth, Lelarge, Francois, Bouchoule, Sophie, Kazazis, Dimitrios, Guilet, Stephane, Le Gratiet, Luc, Ochalski, Tomasz J., Huyet, Guillaume, Martinez, Anthony, and Ramdane, Abderrahim

Subjects
SEMICONDUCTOR lasers, QUANTUM dash lasers, BRAGG gratings, WAVEGUIDE lasers, WAVELENGTHS
Abstract

Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 lm and exhibit a threshold current of 65mA for a 600 lm long cavity, and a room temperature continuous wave output power per facet >5mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 lm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of j~40 cm-1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers. [ABSTRACT FROM AUTHOR]

Published
2017
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28. Model of Ni-63 battery with realistic PIN structure.

Author

Munson IV, Charles E., Arif, Muhammad, Streque, Jeremy, Belahsene, Sofiane, Martinez, Anthony, Ramdane, Abderrahim, El Gmili, Youssef, Salvestrini, Jean-Paul, Voss, Paul L., and Ougazzaden, Abdallah

Subjects
ELECTRON-hole droplets, ELECTRIC batteries, ENERGY development, SCANNING electron microscopes, RADIOACTIVE substances
Abstract

GaN, with its wide bandgap of 3.4 eV, has emerged as an efficient material for designing high-efficiency betavoltaic batteries. An important part of designing efficient betavoltaic batteries involves a good understanding of the full process, from the behavior of the nuclear material and the creation of electron-hole pairs all the way through the collection of photo-generated carriers. This paper presents a detailed model based on Monte Carlo and Silvaco for a GaN-based betavoltaic battery device, modeled after Ni-63 as an energy source. The accuracy of the model is verified by comparing it with experimental values obtained for a GaN-based p-i-n structure under scanning electron microscope illumination. [ABSTRACT FROM AUTHOR]

Published
2015
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33. Coherent WDM transmission using quantum-dash mode-locked laser diodes as multi-wavelength source and local oscillator

Author

Kemal, Juned N., primary, Marin-Palomo, Pablo, additional, Panapakkam, Vivek, additional, Trocha, Philipp, additional, Wolf, Stefan, additional, Merghem, Kamel, additional, Lelarge, François, additional, Ramdane, Abderrahim, additional, Randel, Sebastian, additional, Freude, Wolfgang, additional, and Koos, Christian, additional

Published
2019
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38. Frequency measurement using noise setup for III-nitrides based photodiode

Author

Alshehri, Bandar, Dogheche, Karim, Ramdane, Abderrahim, Decoster, Didier, Dogheche, El Hadj, Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Optoélectronique - IEMN (OPTO - IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Abstract

Symposium B - Optical devicespaper B.01.44; International audience

Published
2017

43. Simple dispersion estimate for single-section quantum-dash and quantum-dot modelocked laser diodes

Author

Ó Dúill, Seán P., Murdoch, Stuart G., Watts, Regan T., Rosales, Ricardo, Ramdane, Abderrahim, Landais, Pascal, and Barry, Liam P.

Subjects
Photonics, Optical communication, Mode-locked lasers, Semiconductor lasers, Laser theory, Dispersion, Femtosecond phenomena
Abstract

The optical outputs of single-section quantum-dash and quantum-dot mode-locked lasers (MLL) are well-known to exhibit strong group velocity dispersion. Based on careful measurements of the spectral phase of the pulses from these MLLs, we confirm that the difference in group delay between the modes at either end of the MLL spectrum equals the cavity roundtrip time. This observation allows us to deduce an empirical formula relating the accumulated dispersion of the output pulse to the spectral extent and free-spectral-range of the MLL. We find excellent agreement with previously reported dispersion measurements of both quantum-dash and quantum-dot MLLs over a wide range of operating conditions.

Published
2016

44. Local Parity-Time Symmetry Functional Devices for Integrated Optics (Orale)

Author

Dubrovina, Natalia, De La Perriere, Vincent Brac, BENISTY, H., Ramdane, Abderrahim, Lupu, Anatole, Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Fabry / Naphel, Laboratoire Charles Fabry (LCF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS), Laboratoire de photonique et de nanostructures (LPN), and Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016

47. WDM Orthogonal Subcarrier Multiplexing Based on Mode-Locked Lasers

Author

Gutierrez, Fernando A., primary, Martin, Eamonn P., additional, Perry, Philip, additional, Ellis, Andrew D., additional, Anthur, Aravind, additional, Panapakkam, Vivek, additional, Gaimard, Quentin, additional, Merghem, Kamel, additional, Lelarge, Francois, additional, Ramdane, Abderrahim, additional, and Barry, Liam P., additional

Published
2017
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