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The exaltation of the photodegradation performance of dichalcogenide MoS2 grown on top of silver nanoparticles (Ag‐NPs) is reported on. The fabricated MoS2 nanosheets nucleate vertically from Ag‐NPs seeds, enabling the growth of both metallic and semiconductor phases 1T/2H‐MoS2. Findings reveal remarkable enhancement of the Raman scattering and an exceptional broadband optical absorption attributed to plasmonic effects induced by the presence of both metallic 1T‐MoS2 and Ag‐NPS at 2H‐MoS2 interfaces. To leverage this effect, photodegradation tests are conducted to remove methyl orange pollutant. Notably, results reveal a significant increase in photodegradation efficiency and rate constant, reaching up to 120% and 550% over pristine 2H‐MoS2, respectively. This finding underscores the role of Ag‐NPs and 1T‐MoS2 tandem to unlock the superior photodegradation properties of vertically aligned 2H‐MoS2 toward methyl orange, paving the way for the development of dichalcogenide‐based hybrid photocatalyst for wastewater treatment and environmental remediation. [ABSTRACT FROM AUTHOR]

In integrated photonic circuits, microring resonators are essential building blocks but are susceptible to phase errors due to fabrication imperfections and optical power fluctuations. Conventional active phase tuning methods are power-intensive and challenging to integrate into densely packed photonic chips. This study proposes a solution by integrating a thin 2D layer of In4/3P2Se6 (InPSe) onto silicon microring resonators (Si-MRR). This approach mitigates sensitivity to laser power and achieves non-volatile wavelength trimming. Under bias voltage, the device exhibits electro-optic behavior, offering a non-volatile phase trimming rate of −2.62 pm/V to −4.62 pm/V, corresponding to InPSe thicknesses of 45 nm to 120 nm. Low optical losses of 0.0091 to 0.0361 dB/μm were also measured, corresponding to thicknesses of 30 nm to 120 nm. The devices demonstrate stable in-situ resonance wavelength stabilization and bidirectional trimming, ensuring cyclic stability for non-volatile phase control. This advancement enhances the performance of silicon photonics across diverse applications, facilitating high-capacity, high-power operation in compact designs. [ABSTRACT FROM AUTHOR]

Pulsed‐laser‐deposition (PLD) is used to deposit MoS2 thin films at substrate temperatures (Td) ranging from 25 to 700 °C. A Td = 500 °C is identified as the optimal temperature that yields MoS2 films consisting of highly‐crystallized 2H‐MoS2 phase with a strong (002) preferential orientation, a direct optical bandgap (Eg) of ∼1.4 eV and a strong photoresponse of ∼1500%. Raman spectroscopy revealed that the degree of vertical alignment of MoS2 layers in the films also reaches its maximum at Td = 500 °C. High‐resolution‐transmission‐electron‐microscopy has provided a clear‐cut evidence that the PLD‐MoS2 films predominantly consist of vertically aligned MoS2 layers over all the film thickness of ∼90 nm, enabling those "3D" films to behave as a direct‐bandgap "2D‐MoS2" with exceptional optoelectronic properties. Indeed, at Td = 500 °C, the PLD‐MoS2 based photodetectors (PDs) devices are shown to exhibit the highest responsivity (R) and detectivity (D*) values (125 mA W−1 and 9.2 × 109 Jones, respectively) ever reported for large area (≥ 1 cm2) MoS2‐based PDs operating at a voltage as low as 1 V. For the first time, a constant‐plus‐linear relationship between Eg, R, and D* of the PDs and the degree of vertical alignment of the MoS2 layers is established. Such a correlation is fundamental for the controlled growth of PLD‐MoS2 films and the tuning of their properties in view of their integration with standard large‐scale‐integration processing. [ABSTRACT FROM AUTHOR]

Aiming to improve the photocatalytic properties of transition metal perovskites to be used as robust photoanodes, [LaFeO3]1−x/[SrTiO3]x nanocomposites (LFO1−x/STOx) are considered. This hybrid structure combines good semiconducting properties and an interesting intrinsic remanent polarization. All the studied samples were fabricated using a solid-state method followed by high-energy ball milling, and they were subsequently deposited by spray coating. The synthesized compounds were demonstrated to possess orthorhombic (Pnma) and cubic (Pm 3 ¯ m) structures for LFO and STO, respectively, with an average grain size of 55–70 nm. The LFO1−x/STOx nanocomposites appeared to exhibit high visible light absorption, corresponding to band gaps of 2.17–3.21 eV. Our findings show that LFO0.5/STO0.5 is the optimized heterostructure; it achieved a high photocurrent density of 11 μA/cm2 at 1.23 V bias vs. RHE and an applied bias photo-to-current efficiency of 4.1 × 10−3% at 0.76 V vs. RHE, as demonstrated by the photoelectrochemical measurements. These results underline the role of the two phases intermixing LFO and STO at the appropriate content to yield a high-performing photoanode ascribed to efficient charge separation and transfer. This suggests that LFO0.5/STO0.5 could be a potential candidate for the development of efficient photoanodes for hydrogen generation via photoelectrocatalytic water splitting. [ABSTRACT FROM AUTHOR]

Layered transition metals dichalcogenides such as MoS2 and WS2 have shown a tunable bandgap, making them highly desirable for optoelectronic applications. Here, we report on one-step chemical vapor deposited MoS2, WS2 and MoxW1-xS2 heterostructures incorporated into photoconductive devices to be examined and compared in view of their use as potential photodetectors. Vertically aligned MoS2 nanosheets and horizontally stacked WS2 layers, and their heterostructure form MoxW1-xS2, exhibit direct and indirect bandgap, respectively. To analyze these structures, various characterization methods were used to elucidate their properties including Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectrometry and high-resolution transmission electron microscopy. While all the investigated samples show a photoresponse in a broad wavelength range between 400 nm and 700 nm, the vertical MoS2 nanosheets sample exhibits the highest performances at a low bias voltage of 5 V. Our findings demonstrate a responsivity and a specific detectivity of 47.4 mA W−1 and 1.4 × 1011 Jones, respectively, achieved by MoxW1-xS2. This study offers insights into the use of a facile elaboration technique for tuning the performance of MoxW1-xS2 heterostructure-based photodetectors. [ABSTRACT FROM AUTHOR]

Controlled fabrication and maneuvering of nanostructures has been of great interest in nanotechnology because of the potential applications it could deliver. In this study, we demonstrate the in situ fabrication and manipulation method of nanopillars made of a Pt-C composite by means of electron induced bending. Hereafter, we propose novel experiments contributing to unfold the mechanisms responsible for the bending process. Our results confirm that this bending is due to the phase transformation of the as-grown Pt-C nanopillars induced by the electron beam irradiation. The optimized beam energy and the beam irradiation dose necessary for the bending have been experimentally determined and corroborated by Monte Carlo simulations. The results further advance the understanding of electron matter interaction and pave the way for designing 3D nanostructures for various applications. [ABSTRACT FROM AUTHOR]

Despite the wide applications of Short-Wave Infrared (SWIR) imaging, standard imaging materials require lattice matching and complex fabrication techniques which are relatively expensive. In this work, 50 nm thick amorphous indium telluride (In2Te3) films are RF sputtered on a silicon (Si/SiO2) substrate at 300 °C. The films are used to fabricate back-gated field-effect photodetectors (PDs). The In2Te3 detectors exhibit a broad wavelength response from 406 nm to 1600 nm and a photo responsivity of 0.44 AW− under 1310 nm excitation at 5 V bias. Furthermore, an n-type behavior with an electron field-effect mobility of 1.15 cm2V−1s−1 is observed. We also evaluated the frequency response of the PDs under 1310 nm modulated light, a 3dB cut-off frequency of ~0.97 MHz is measured. Further, the device exhibits specific detectivity of $1.32\times 10^{{9}}$ Jones and very good stability at ambient conditions. [ABSTRACT FROM AUTHOR]

A chemically vapor deposited MoS2 nanosheets (NSs) is aged in the laboratory at ambient and at 40% average humidity for ~36 months. Nanorods of few microns in length and few nanometers in diameter are found to grow from the MoS2 seeds. They have been growing as a result of the chemical reaction between the MoS2 NSs and ambient O2 and moisture, they exhibit an amorphous phase structure in the stoichiometric form of MoO3. Density functional theory simulations further reveal the role of H2O and O2 in the transformation of the MoS2 NSs. The adsorption energy of O2 molecules on the MoS2 sites is Ead = −1.09 eV as compared to lowest absolute Ead = −0.10 eV of H2O indicating the favorable adsorption of O2 and subsequent Mo oxidation. This study provides valuable insight into the aging phenomenon of MoS2 exposed to O2 and moisture which might limit their application. [ABSTRACT FROM AUTHOR]

Tungsten disulfide nanosheets were successfully prepared by one-step chemical vapor deposition using tungsten oxide and thiourea in an inert gas environment. The size of the obtained nanosheets was subsequently reduced down to below 20 nm in width and 150 nm in length using high-energy ball milling, followed by 0.5 and 1 wt% graphene loading. The corresponding vibrational and structural characterizations are consistent with the fabrication of a pure WS2 structure for neat sampling and the presence of the graphene characteristic vibration modes in graphene@WS2 compounds. Additional morphological and crystal structures were examined and confirmed by high-resolution electron microscopy. Subsequently, the investigations of the optical properties evidenced the high optical absorption (98%) and lower band gap (1.75 eV) for the graphene@WS2 compared to the other samples, with good band-edge alignment to water-splitting reaction. In addition, the photoelectrochemical measurements revealed that the graphene@WS2 (1 wt%) exhibits an excellent photocurrent density (95 μA/cm2 at 1.23 V bias) compared with RHE and higher applied bias potential efficiency under standard simulated solar illumination AM1.5G. Precisely, graphene@WS2 (1 wt%) exhibits 3.3 times higher performance compared to pristine WS2 and higher charge transfer ability, as measured by electrical impedance spectroscopy, suggesting its potential use as an efficient photoanode for hydrogen evolution reaction. [ABSTRACT FROM AUTHOR]