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Magnetic kagome materials provide a fascinating playground for exploring the interplay of magnetism, correlation and topology. Many magnetic kagome systems have been reported including the binary FemXn (X=Sn, Ge; m:n = 3:1, 3:2, 1:1) family and the rare earth RMn6Sn6 (R = rare earth) family, where their kagome flat bands are calculated to be near the Fermi level in the paramagnetic phase. While partially filling a kagome flat band is predicted to give rise to a Stoner-type ferromagnetism, experimental visualization of the magnetic splitting across the ordering temperature has not been reported for any of these systems due to the high ordering temperatures, hence leaving the nature of magnetism in kagome magnets an open question. Here, we probe the electronic structure with angle-resolved photoemission spectroscopy in a kagome magnet thin film FeSn synthesized using molecular beam epitaxy. We identify the exchange-split kagome flat bands, whose splitting persists above the magnetic ordering temperature, indicative of a local moment picture. Such local moments in the presence of the topological flat band are consistent with the compact molecular orbitals predicted in theory. We further observe a large spin-orbital selective band renormalization in the Fe d_xy+d_(x^2-y^2 ) spin majority channel reminiscent of the orbital selective correlation effects in the iron-based superconductors. Our discovery of the coexistence of local moments with topological flat bands in a kagome system echoes similar findings in magic-angle twisted bilayer graphene, and provides a basis for theoretical effort towards modeling correlation effects in magnetic flat band systems.

Interplay of superconductivity and density wave orders has been at the forefront of research of correlated electronic phases for a long time. 2H-NbSe$_2$ is considered to be a prototype system for studying this interplay, where the balance between the two orders was proven to be sensitive to band filling and pressure. However, the origin of charge density wave in this material is still unresolved. Here, by using angle-resolved photoemission spectroscopy, we revisit the charge density wave order and study the effects of uniaxial strain on the electronic structure of 2H-NbSe$_2$. Our results indicate previously undetected signatures of charge density waves on the Fermi surface. The application of small amount of uniaxial strain induces substantial changes in the electronic structure and lowers its symmetry. This, and the altered lattice should affect both the charge density wave phase and superconductivity and should be observable in the macroscopic properties., Comment: 9 pages, 6 figures

Renew interest in the charge density wave phase of TiSe$_2$ stems from the realization of its unique driving mechanism, the so called excitonic insulator phase. Existing claims are motivated by model calculations of the band structure. In this study, angle resolved photoemsision spectroscopy and density functional theory for TiSe$_2$ are directly compared. The substantial discrepancies found between the two descriptions cast serious doubts on the exitonic insulator scenario as the correct physical mechanism underlying the periodic lattice distortion at low temperature. In particular, the formation of a valence-conduction hybridization gap in the bulk band structure is not present in the experimental data. Therefore, the origin of the structural transition in TiSe$_2$ cannot be fully explained within the existing theoretical models., Comment: 5 pages, 4 figures

Materials hosting flat electronic bands are a central focus of condensed matter physics as promising venues for novel electronic ground states. Two-dimensional (2D) geometrically frustrated lattices such as the kagome, dice, and Lieb lattices are attractive targets in this direction, anticipated to realize perfectly flat bands. Synthesizing these special structures, however, poses a formidable challenge, exemplified by the absence of solid-state materials realizing the dice and Lieb lattices. An alternative route leverages atomic orbitals to create the characteristic electron hopping of geometrically frustrated lattices. This strategy promises to expand the list of candidate materials to simpler structures, but is yet to be demonstrated experimentally. Here, we report the realization of frustrated hopping in the van der Waals (vdW) intermetallic Pd$_5$AlI$_2$, emerging from orbital decoration of a primitive square lattice. Using angle-resolved photoemission spectroscopy and quantum oscillations measurements, we demonstrate that the band structure of Pd$_5$AlI$_2$ includes linear Dirac-like bands intersected at their crossing point by a flat band, essential characteristics of frustrated hopping in the Lieb and dice lattices. Moreover, Pd$_5$AlI$_2$ is exceptionally stable, with the unusual bulk band structure and metallicity persisting in ambient conditions down to the monolayer limit. Our ability to realize an electronic structure characteristic of geometrically frustrated lattices establishes orbital decoration of primitive lattices as a new approach towards electronic structures that remain elusive to prevailing lattice-centric searches.

The finite momentum superconducting pairing states (FMPs), where Cooper pairs carry non-zero momentum, are believed to give rise to exotic physical phenomena including the pseudogap phase of cuprate high-Tc superconductors and Majorana fermions in topological superconductivity. FMPs can emerge in intertwined electronic liquids with strong spin-spin interactions or be induced by lifting the spin degeneracy under magnetic field as originally proposed by Fulde-Ferrell and Larkin-Ovchinnikov. In quantum materials with strong Ising-type spin-orbit coupling, such as the 2D transition metal dichalcogenides (TMDs), the spin degree of freedom is frozen enabling novel orbital driven FMPs via magnetoelectric effect. While evidence of orbital driven FMPs has been revealed in bilayer TMDs, its realization in 3D bulk materials remains an unresolved challenge. Here we report experimental signatures of FMP in a locally noncentrosymmetric bulk superconductor 4Hb-TaS2. Using hard X-ray diffraction and angle-resolved photoemission spectroscopy, we reveal unusual 2D chiral charge density wave (CDW) and weak interlayer hopping in 4Hb-TaS2. Below the superconducting transition temperature, the upper critical field, Hc2, linearly increases via decreasing temperature, and well exceeds the Pauli limit, thus establishing the dominant orbital pair-breaking mechanism. Remarkably, we discover a field-induced superconductivity-to-superconductivity transition that breaks continuous rotational symmetry of the s-wave uniform pairing in the Bardeen-Cooper-Schrieffer theory down to the six-fold rotation symmetry. Combining with a Ginzburg-Landau free energy analysis that incorporates magnetoelectric effect, our observations provide strong evidence of orbital driven FMP in the 3D quantum heterostructure 4Hb-TaS2.

Topology and correlations are fundamental concepts in modern physics, but their simultaneous occurrence within a single quantum phase is exceptionally rare. In this study, we present the discovery of such a phase of matter in Ta2Pd3Te5, a semimetal where the Coulomb interaction between electrons and holes leads to the spontaneous formation of excitonic bound states below T=100 K. Our spectroscopy unveils the development of an insulating gap stemming from the condensation of these excitons, thus giving rise to a highly sought-after correlated quantum phase known as the excitonic insulator. Remarkably, our scanning tunneling microscopy measurements reveal the presence of gapless boundary modes in the excitonic insulator state. Their magnetic field response and our theoretical calculations suggest a topological origin of these modes, rendering Ta2Pd3Te5 as the first experimentally identified topological excitonic insulator in a three-dimensional material not masked by any structural phase transition. Furthermore, our study uncovers a secondary excitonic instability below T=5 K, which differs from the primary one in having finite momentum. We observe unprecedented tunability of its wavevector by an external magnetic field. These findings unlock a frontier in the study of novel correlated topological phases of matter and their tunability.

We report the topological electronic structure, magnetic, and magnetotransport properties of a noncentrosymmetric compound GdAlSi. Magnetic susceptibility shows an antiferromagnetic transition at $T_\mathrm{N}$ = 32 K. In-plane isothermal magnetization exhibits an unusual hysteresis behavior at higher magnetic field, rather than near zero field. Moreover, the hysteresis behavior is asymmetric under positive and negative magnetic fields. First-principles calculations were performed on various magnetic configurations, revealing that the antiferromagnetic state is the ground state, and the spiral antiferromagnetic state is a close competing state. The calculations also reveal that GdAlSi hosts multiple Weyl points near the Fermi energy. The band structure measured by angle-resolved photoemission spectroscopy (ARPES) shows relatively good agreement with the theory, with the possibility of Weyl nodes slightly above the Fermi energy. Within the magnetic ordered state, we observe an exceptionally large anomalous Hall conductivity (AHC) of ~ 1310 $\Omega^{-1}$cm$^{-1}$ at 2 K. Interestingly, the anomalous Hall effect persists up to room temperature with a significant value of AHC (~ 155 $\Omega^{-1}$cm$^{-1}$). Our analysis indicates that the large AHC originates from the Berry curvature associated with the multiple pairs of Weyl points near Fermi energy., Comment: 10 pages, 6 figures, Accepted for publication in Phys. Rev. B

Epitaxially grown RuO2 films on TiO2 (110) exhibit significant in-plane strain anisotropy, with a compressive strain of - 4.7% along the [001] crystalline direction and a tensile strain of +2.3% along [1-10]. As the film thickness increases, anisotropic strain relaxation is expected. By fabricating Hall bar devices with current channels along two in-plane directions <001> and <1-10>, we revealed anisotropic in-plane transport in RuO2/TiO2 (110) films grown via solid-source metal-organic molecular beam epitaxy approach. For film thicknesses (t_film) < 3.6 nm, the resistivity along <001> exceeds that along <1-10> direction at all temperatures. With further decrease in film thicknesses, we uncover a transition from metallic to insulating behavior at t_film <2.1 nm. Our combined temperature- and magnetic field-dependent electrical transport measurements reveal that this transition from metallic to insulating behavior is driven by electron-electron interactions., Comment: 15 pages

Here we present the family of titanium-based kagome metals of the form LnTi$_3$Bi$_4$ (Ln: La...Gd$^{3+}$, Eu$^{2+}$, Yb$^{2+}$). Single crystal growth methods are presented alongside detailed magnetic and thermodynamic measurements. The orthorhombic (Fmmm) LnTi$_3$Bi$_4$ family of compounds exhibit slightly distorted titanium-based kagome nets interwoven with zig-zag lanthanide-based (Ln) chains. Crystals are easily exfoliated parallel to the kagome sheets and angular resolved photoemission (ARPES) measurements highlight the intricacy of the electronic structure in these compounds, with Dirac points existing at the Fermi level. The magnetic properties and the associated anisotropy emerge from the quasi-1D zig-zag chains of Ln, and impart a wide array of magnetic ground states ranging from anisotropic ferromagnetism to complex antiferromagnetism with a cascade of metamagnetic transitions. Kagome metals continue to provide a rich direction for the exploration of magnetic, topologic, and highly correlated behavior. Our work here introduces the LnTi$_3$Bi$_4$ compounds to augment the continuously expanding suite of complex and interesting kagome materials.

The long range electronic modulations recently discovered in the geometrically frustrated kagome lattice have opened new avenues to explore the effect of correlations in materials with topological electron flat bands. The observation of the lattice response to the emergent new phases of matter, a soft phonon mode, has remained elusive and the microscopic origin of charge density waves (CDWs) is still unknown. Here, we show, for the first time, a complete melting of the ScV$_ 6$Sn$_ 6$ (166) kagome lattice. The low energy phonon with propagation vector $\frac{1}{3} \frac{1}{3} \frac{1}{2}$ collapses at 98 K, without the emergence of long-range charge order, which sets in with a propagation vector $\frac{1}{3} \frac{1}{3} \frac{1}{3}$. The CDW is driven (but locks at a different vector) by the softening of an overdamped phonon flat plane at k$_z$=$\pi$. We observe broad phonon anomalies in momentum space, pointing to (1) the existence of approximately flat phonon bands which gain some dispersion due to electron renormalization, and (2) the effects of the momentum dependent electron-phonon interaction in the CDW formation. Ab initio and analytical calculations corroborate the experimental findings to indicate that the weak leading order phonon instability is located at the wave vector $\frac{1}{3} \frac{1}{3} \frac{1}{2}$ of a rather flat collapsed mode. We analytically compute the phonon frequency renormalization from high temperatures to the soft mode, and relate it to a peak in the orbital-resolved susceptibility, obtaining an excellent match with both ab initio and experimental results, and explaining the origin of the approximately flat phonon dispersion. Our data report the first example of the collapse of a softening of a flat phonon plane and promote the 166 compounds of the kagome family as primary candidates to explore correlated flat phonon-topological flat electron physics., Comment: 10 pages, 4 figures

We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$ films, with field effect mobility up to 23,000 cm$^{2}$V$^{-1}$s$^{-1}$ achieved. Switching the ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$, from which we extract the RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering., Comment: 15 pages, 6 figures

Hysteretic magnetoresistance (MR) is often used as a signature of ferromagnetism in conducting oxide thin films and heterostructures. Here, magnetotransport is investigated in a non-magnetic uniformly La-doped SrSnO3 film grown using hybrid molecular beam epitaxy. A 12 nm La:SrSnO3/2 nm SrSnO3/GdScO3 (110) film with insulating behavior exhibited a robust hysteresis loop in the MR at T < 5 K accompanied by an anomaly at ~ +/- 3 T at T < 2.5 K. Furthermore, MR with the field in-plane yielded a value exceeded 100% at 1.8 K. Using detailed temperature-, angle- and magnetic field-dependent resistance measurements, we illustrate the origin of hysteresis is not due to magnetism in the film but rather is associated with the magnetocaloric effect of the GdScO3 substrate. Given GdScO3 and similar substrates are commonly used in complex oxide research, this work highlights the importance of thermal coupling to processes in the substrates which must be carefully accounted for in the data interpretation for thin films and heterostructures utilizing these substrates.

A seemingly simple oxide with a rutile structure, RuO2 has been shown to possess several intriguing properties ranging from strain-stabilized superconductivity to a strong catalytic activity. Much interest has arisen surrounding the controlled synthesis of RuO2 films but, unfortunately, utilizing atomically-controlled deposition techniques like molecular beam epitaxy (MBE) has been difficult due to the ultra-low vapor pressure and low oxidation potential of Ru. Here, we demonstrate the growth of epitaxial, single-crystalline RuO2 films on different substrate orientations using the novel solid-source metal-organic (MO) MBE. This approach circumvents these issues by supplying Ru using a pre-oxidized solid metal-organic precursor containing Ru. High-quality epitaxial RuO2 films with bulk-like room-temperature resistivity of 55 micro-ohm-cm were obtained at a substrate temperature as low as 300 C. By combining X-ray diffraction, transmission electron microscopy, and electrical measurements, we discuss the effect of substrate temperature, orientation, film thickness, and strain on the structure and electrical properties of these films. Our results illustrating the use of novel solid-source MOMBE approach paves the way to the atomic-layer controlled synthesis of complex oxides of stubborn metals, which are not only difficult to evaporate but also hard to oxidize., Comment: 21 pages including 6 figures

By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase epitaxy (MOVPE). High magnetic field Hall effect measurements (H = +/-90 kOe) showed non-linear Hall resistance for T < 150 K revealing two-band conduction. Further analyses revealed carrier freeze-out characteristics in both bands yielding donor state energies of ~ 33.7 and ~ 45.6 meV. The former is consistent with the donor energy of Si in \b{eta}-Ga2O3 whereas the latter suggests a residual donor state, likely associated with a DX center. This study provides a critical insight into the impurity band conduction and the defect energy states in \b{eta}-Ga2O3 using high-field magnetotransport measurements., Comment: 14 pages