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International audience; A promising way to tailor the chemical and electronic properties of graphene layers is the doping of the carbon honeycomb using heteroatoms such as nitrogen or boron. In the domain of electrochemical sensor, this may allow to control both conductivity and chemical activity. Nitrogen doped graphene was produced by the thermal annealing of nitrogen doped amorphous carbon (a-C:N) deposited either on a nickel thin film on a silicon substrate or between the silicon substrate and the nickel catalyst layer. The a-C:N thin films were produced by femtosecond pulsed laser ablation of graphite in nitrogen, while the nickel thin film was thermally evaporated. The nitrogen content and bonding configuration in the produced films were evaluated by XPS spectroscopy, with a particular attention to the ratio of pyridinic and pyrrolic bondings, the former being more interesting to control the conductivity and chemical activity of the film. The structure of the graphene was studied through microRaman spectroscopy using Raman mapping. Those results were compared to the electrochemical properties of the produced N-doped graphene films, studied through cyclic voltammetry using ferrocene as a redox probe. Electron transfer properties are compared to non-doped graphene films, which have already shown promising electrografting perspectives for advanced compound detection (1).(1) P. Fortgang et al., ACS Applied Materials and Interfaces 8 (2016) 1424-1433