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International audience; This paper presents several innovative solutions in the view of transferring gate signal orders for power semiconductor devices. While considering both monolithic and heterogeneous integration approaches, three different solutions are presented both theoretically and experimentally. The first integration scheme for the required signal insulation unit is based on integrated optical detectors; optical detectors are designed, fabricated and characterized when integrated within vertical power semiconductor devices and within a CMOS gate driver. The DC and AC performances of the first prototypes are compatible with the requirements and specifications for power converters. As a complementary and competitive integration approach, integrated coreless transformers within CMOS gate drivers are designed and characterized. A particular experimental investigation of high frequency coupling is described. A CMOS gate driver containing both a coreless transformer and other necessary functions is applied to a buck converter. Such an integrated circuit is then used to drive a high side and low side power transistor.

International audience; This paper presents a detailed analysis of racetrack resonators on silicon on insulator substrates. Both the temperature effects and the particularities of silicon nanophotonics are considered throughout the approach. This paper provides a detailed description of the numerical modeling and its application to different designs, while providing several charts and fitting equations. The results presented in this paper can be applied to three major applications: Thermo-optical tuning of optical resonators, thermo-optical modulator and wide range/high sensitivity temperature sensors. While quantifying the temperature effects, this paper also provides useful answers on how critical the temperature parameter is in the optical cavity behaviour.

This paper demonstrates an accurate measurement procedure to characterize the DC and AC performance of an optical detector designed for monolithic integration with a 600 V vertical power MOS transistor. The spectral quantum efficiency (QE) from 400 nm up to 1 μm wavelengths has been measured. A QE of 26% in the 450 nm - 520 nm wavelength range was achieved. The developed setup and measurement procedures can be used for diced samples, packaged devices, and on-wafer probing (maximum size: 4” wafers); furthermore, it is equipped with temperature control. The integrated optical detectors (IOD) key phenomena have been investigated for a wide range of wavelengths and biasing conditions, both experimentally and numerically. Simulation results as well as experimental results are presented and compared.

We demonstrate wavelength tuning of silicon-on-insulator racetrack resonators, induced by the by the creation of defects via ion implantation. This presents a method to alter the resonant wavelength after fabrication, albeit with increased optical loss.

We present a study on the effects of inert ion implantation of Silicon-On-Insulator (SOI) racetrack resonators. Selective ion implantation was used to create deep-level defects within a portion of the resonator. The resonant wavelength and round-trip loss were deduced for a range of sequential post-implantation annealing temperatures from 100 to 300 °C. As the devices were annealed there was a concomitant change in the resonance wavelength, consistent with an increase in refractive index following implantation and recovery toward the pre-implanted value. A total shift in resonance wavelength of ~2.9 nm was achieved, equivalent to a 0.02 increase in refractive index. The excess loss upon implantation increased to 301 dB/cm and was reduced to 35 dB/cm following thermal annealing. In addition to providing valuable data for those incorporating defects within resonant structures, we suggest that these results present a method for permanent tuning (or trimming) of ring resonator characteristics.

We have demonstrated uniform and sampled Bragg gratings in silicon-on-insulator strip waveguides with symmetric sidewall corrugations. The fabrication is based on 193-nm deep ultraviolet lithography using a single mask. The measured reflection spectra of sampled gratings exhibit ten usable peaks spaced by 4.2 nm, and show good agreement with theoretical predictions.

We demonstrate the design and performance of Bragg gratings on silicon-on-insulator waveguides. Two structures for achieving the modulation of the effective index of refraction are described. The grating fabrication is based on deep ultra-violet lithography using a single mask. The thermal tunability of the devices is demonstrated.

We present a novel design of a wavelength-selective reflector using a microring resonator integrated with a low-loss, low-crosstalk waveguide crossing. Functioning as a reflective notch filter, it can be used for optical communications and for sensor applications. The device is simulated using the transfer-matrix method combined with a two-dimensional finite-difference mode solver and is fabricated by a CMOS-compatible silicon-on-insulator technology. The measurement shows an extinction ratio greater than 25 dB and a resonance-wavelength temperature dependence of 0.09 nm/K.

We demonstrate the design and performance of a silicon-on-insulator ring-resonator reflector with a low-loss, low-crosstalk waveguide crossing. The device is simulated using the transfer-matrix method and a 2D finite-difference mode solver. It functions as a reflective-type notch filter and can be used for optical communications or thermal, biochemical, or other sensors. An extinction ratio of over 25 dB is observed experimentally.

A 1550 InGaAsP-InP multiple-quantum-well (MQW) transistor laser is numerically modeled. The proposed structure has a deep-ridge waveguide and asymmetric doping profile in the base (i.e. only the part below QWs of the base is doped) which provides good optical and electrical confinement and effectively reduces the lateral leakage current and optical absorption. The important physical models and parameters are discussed and validated by modeling a conventional ridge-waveguide laser diode and comparing the results with the experiment. The simulation results of the transistor laser demonstrate a low threshold (< 10 mA) and a > 25 % slope efficiency with the current gain of 2 ~ 4. The optical saturation and voltage-controlled operation are also demonstrated. Copyright 2009 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Milwaukee, ETATS-UNIS, 18-/09/2016 - 22/09/2016; Temperature measurement of semiconductor components is essential, in particular to evaluate performances and to propose health monitoring of power modules.ThermoSensitive Electrical Parameters (TSEPs) are widely used to estimate a representative temperature of these components, mainly in non-operating conditions, different from the real environment of the latter (offline measurements). Nevertheless, some TSEPs may be adapted to online temperature measurements, in operating conditions of power converters. It is however difficult to evaluate the accuracy of those TSEPs. This paper presents an instrumented chip dedicated to estimate the temperature in power electronic modules under functional constraints. Thus, it offers a reliable and robust tool for temperature measurements in power electronic converters. Preliminary results presented in this paper concern the technological process of realization and demonstrate the good functioning of this instrumented chip under power dissipation and switching conditions.

International audience; To solve the galvanic isolation challenges in drivers related to gate signal transfer to power transistors, an optical detector was monolithically integrated within a 600 V vertical power transistor without any modifications in the fabrication process. After fabricating an initial prototype, preliminary static and dynamic characterization results have been investigated. The fabricated devices showed responsivities of 0.046 A/W at 0 V bias and 0.15 A/W at 15 V reverse bias and a bandwidth of at least 800 kHz when triggered with a 525 nm wavelength LED at an optical power in the microwatt range.