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Ion irradiation combined with nanoindentation is a promising tool to study irradiation-induced hardening of nuclear materials including reactor pressure vessel (RPV) steels. For RPV steels, the major sources of hardening are nm-sized irradiation-induced dislocation loops and solute atom clusters, both representing barriers for dislocation glide. The dispersed barrier hardening (DBH) model provides a link between the irradiation-induced nanofeatures and hardening. However, a number of details of the DBH model still require consideration. These include the role of the unirradiated microstructure, the proper treatment of the indentation size effect (ISE), and the appropriate superposition rule of individual hardening contributions. In the present study, two well characterized RPV steels, each ion-irradiated up to two different levels of displacement damage, were investigated. Dislocation loops and solute atom clusters were characterized by transmission electron microscopy and atom probe tomography, respectively. Nanoindentation with a Berkovich indenter was used to measure indentation hardness as a function of the contact depth. In the present paper, the measured hardening profiles are compared with predictions based on different DBH models. Conclusions about the appropriate superposition rule and the consideration of the ISE (in terms of geometrically necessary dislocations) are drawn.

Mainly the original data for model establishment.

Surface-directed and preferentially oriented assemblies of nanomaterials can enable enhanced applications in e.g. catalysis or sensing. Coordination polymers, which can be even conducting, could be suitable materials for this purpose because of their facile surface anchoring. Hence, we coassembled rhodium paddle-wheel building blocks with bi- or trifunctional linkers in dip coatings that were produced by layer-by-layer approach on silicon wafers functionalized by thin nanocrystalline gold surfaces. These gold surfaces were decorated with a self-assembled monolayer (SAM) for coordination and binding to the Rh-units. As linkers, pyrazine, triazine and melamine were used, leading to rectangularly-shaped, hexagonally-shaped or needle-like crystals, respectively. The coordination polymers were produced by repeated dipping into the linker and paddle-wheel solution, each followed by a cleaning step. The crystals growth was followed by atomic force microscopy (AFM) grazing incidence small-angle X-ray scattering (GISAXS) and grazing incidence wide-angle X-ray scattering (GIWAXS). AFM and GISAXS revealed the shape and size of the crystals. GIWAXS disclosed their preferred orientation. It turned out that the automated dipping procedure does not lead to a strong alignment of crystallites along the dipping direction for the pyrazine-based deposits. However, these crystals are preferentially oriented with respect to the substrate normal direction. The crystallographic direction and the degree of the alignment depend on the number of deposition cycles. In the early phases of the deposition process, predominantly “lying” crystals were detected. With increasing number of the deposition cycles, the fraction of “standing” crystals became dominant. These crystals are oriented with their {010} directions perpendicular to the surface of the substrate. Still, “lying” and some tilted crystals were detected additionally. The study gives a deeper structural understanding of crystallite assem

The compositional, optical and structural stability of transparent conductive oxide SnO2:Ta (1.25 at.% Ta) thin films at 650 °C and 800 °C in air was studied under isothermal conditions. After the high-temperature treatment, the element composition and the optical spectra of the material were unchanged. The X-ray diffraction confirmed the conservation of a single rutile-type phase. Two strong Raman lines located out of the SnO2 phonon range indicated point defects in the material, which were identified as Sn vacancies and O interstitials by theoretical calculations. These point defects were partially healed out during the high-temperature treatment, without affecting the transmittance and reflectance of the material. Our study demonstrates an exceptional high in-air stability of Ta-doped SnO2 and encourages it for applications in fields, where transparent conductive oxides with high-temperature and oxidation stability are required. These are, e.g., selective transmitters for concentrated solar power or electrodes for dye-sensitized solar cells and dynamic random-access memories.

The transparent conductive tantalum doped tin oxide is a potential candidate for applications in concentrated solar power technology, dye-sensitized solar cells and dynamic random access memories [1], [2], [3]. In all these fields, high-temperature stability in air is mandatory to preserve its functionality. In this work we demonstrate the compositional and structural in-air-stability of SnO2:Ta thin films at 650 °C and 800 °C for 12 hours. While the element composition and optical spectra were unchanged and the X-ray diffractograms revealed the conservation of a single-phase rutile-type crystal structure, some strong Raman lines of SnO2:Ta underwent substantial changes upon tempering. Quantum ab initio calculations of pristine and Ta-doped SnO2 with systematically varied point defects indicated that preferentially Sn vacancies and excess O atoms are responsible for these strong and unexpected Raman signatures. These defects are partially healed during high-temperature exposure, but that does not affect the functionality of SnO2:Ta as transparent conductor under these harsh conditions. This study provides a comprehensive understanding of crystal and defect structure of Ta-doped SnO2 prior to and after high temperature treatment in air for the first time and encourages its application in different fields where high-T stability, transparency and conductivity are required. [1] F. Lungwitz et al., Transparent conductive tantalum doped tin oxide as selectively solar-transmitting coating for high temperature solar thermal applications, Solar Energy Mater. Solar Cells 199, 84 (2019), doi: 10.1016/j.solmat.2019.03.012 [2] R. Ramarajan, et al. Large-area spray deposited Ta-doped SnO2 thin film electrode for DSSC application, Solar Energy 211, 547-559 (2020), doi:10.1016/j.solener.2020.09.042. [3] C. J. Cho, et al. Ta-Doped SnO2 as a reduction-resistant oxide electrode for DRAM capacitors, Journal of