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132 results on '"Radic, N."'

37. Photoconductivity transients and photosensitization phenomena in semi-insulating GaAs

Author

Santic, B., Desnica, U.V., Radic, N., Desnica, D., and Pavlovic, M.

Subjects
Photoconductivity -- Models, Gallium arsenide semiconductors -- Optical properties, Transients (Electricity) -- Research, Physics
Abstract

A new model for characterizing photoconductivity transients and photosensitization due to low-intensity light in semi-insulating GaAs was presented. The model did not require the metastability of EL2 or other defects and was capable of determining the values of capture cross sections for dominant traps. It was shown that the lifetime of free carriers was a time-dependent quantity which was primarily determined by the trapping processes.

Published
1993

45. Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix

Author

Buljan, M., Radic, N., Sancho-Paramon, J., Janicki, V., Grenzer, J., Bogdanovic-Radovic, I., Siketic, Z., Ivanda, M., Utrobicic, A., Huebner, R., Weidauer, R., Vales, V., Endres, J., Car, T., Jercinovic, M., Rosko, J., Bernstorff, S., Holy, V., Buljan, M., Radic, N., Sancho-Paramon, J., Janicki, V., Grenzer, J., Bogdanovic-Radovic, I., Siketic, Z., Ivanda, M., Utrobicic, A., Huebner, R., Weidauer, R., Vales, V., Endres, J., Car, T., Jercinovic, M., Rosko, J., Bernstorff, S., and Holy, V.

Abstract

We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2 O3 /Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells.

Published
2015

46. Efficiency and competition in the investment banking industry

Author

Radic, N

Subjects
Settore SECS-P/11 - Economia degli Intermediari Finanziari, net inflows, corporate and investment banks (CIB), chief executive officer (CEO), distribution free approach - parametric approach (DFA), Herfindhal index of concentration, capital risk exposure (CAR), bank asset size (BAS), boutique investment banks (BIB), European Union, CONC, foreign direct investment (FDI), asset diversification
Published
2010

47. Self-assembled growth of Ni nanoparticles in amorphous alumina matrix

Author

Jercinovic, M., Radic, N., Buljan, M., Grenzer, J., Delac-Marion, I., Kralj, M., Bogdanovic-Radovic, I., Hübner, R., Dubcek, P., Salamon, K., Bernstorff, S., Jercinovic, M., Radic, N., Buljan, M., Grenzer, J., Delac-Marion, I., Kralj, M., Bogdanovic-Radovic, I., Hübner, R., Dubcek, P., Salamon, K., and Bernstorff, S.

Abstract

We present the formation of an ordered three-dimensional lattice of Ni nanocrystals in an amorphous alumina matrix by a self-assembly process. The self-assembled growth achieved by single-step magnetron sputtering deposition of a Ni/Al2O3 multilayer is driven by surface morphology effects. The influence of the Ni layer thickness on the Ni particle size, separation, and quality of ordering is examined. The quality of Ni nanoparticles ordering in alumina is compared to their ordering in a silica matrix. The obtained results are important for the understanding of the self-assembly process of metallic particles in amorphous matrices and the applications of such materials.

Published
2014

50. GISAXS study of SiO/SiO2 superlattice

Author

Kovacevic, I., Pivac, B., Dubcek, P., Radic, N., Bernstorff, S., Slaoui, A., Institut d'Electronique du Solide et des Systèmes (InESS), Université Louis Pasteur - Strasbourg I-Centre National de la Recherche Scientifique (CNRS), and Jung, Marie-Anne

Subjects
GISAXS, SiO, SiO2, superlattice
Abstract

The correlation between the structural and optoelectronic properties of Si nanocrystals prepared by a variety of methods is still unresolved problem.

Published
2005

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