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The ionization region model (IRM) is applied to explore working gas rarefaction in high power impulse magnetron sputtering discharges operated with graphite, aluminum, copper, titanium, zirconium, and tungsten targets. For all cases the working gas rarefaction is found to be significant, the degree of working gas rarefaction reaches values of up to 83%. The various contributions to working gas rarefaction, including electron impact ionization, kick-out by the sputtered species or hot argon atoms, and diffusion, are evaluated and compared for the different target materials, and over a range of discharge current densities. The relative importance of the various processes varies between different target materials. In the case of a graphite target with argon as the working gas at 1 Pa, electron impact ionization (by both primary and secondary electrons) is the dominating contributor to working gas rarefaction, with over 90% contribution, while the contribution of sputter wind kick-out is small < 10 %. In the case of copper and tungsten targets, the kick-out dominates, with up to ∼60% contribution at 1 Pa. For metallic targets the kick-out is mainly due to metal atoms sputtered from the target, while for the graphite target the small kick-out contribution is mainly due to kick-out by hot argon atoms and to a smaller extent by carbon atoms. The main factors determining the relative contribution of the kick-out by the sputtered species to working gas rarefaction appear to be the sputter yield and the working gas pressure., QC 20240627

In magnetron sputtering, only a fraction of the sputtered target material leaving the ionization region is directed toward the substrate. This fraction may be different for ions and neutrals of the target material as the neutrals and ions can exhibit a different spread as they travel from the target surface toward the substrate. This difference can be significant in high power impulse magnetron sputtering (HiPIMS) where a substantial fraction of the sputtered material is known to be ionized. Geometrical factors or transport parameters that account for the loss of produced film-forming species to the chamber walls are needed for experimental characterization and modeling of the magnetron sputtering discharge. Here, we experimentally determine transport parameters for ions and neutral atoms in a HiPIMS discharge with a titanium target for various magnet configurations. Transport parameters are determined to a typical substrate, with the same diameter (100 mm) as the cathode target, and located at a distance 70 mm from the target surface. As the magnet configuration and/or the discharge current are changed, the transport parameter for neutral atoms xi(tn) remains roughly the same, while transport parameters for ions xi(ti) vary greatly. Furthermore, the relative ion-to-neutral transport factors, xi(ti)/xi(tn), that describe the relative deposited fractions of target material ions and neutrals onto the substrate, are determined to be in the range from 0.4 to 1.1., QC 20230110

The high power impulse magnetron sputtering (HiPIMS) discharge brings about increased ionization of the sputtered atoms due to an increased electron density and efficient electron energization during the active period of the pulse. The ionization is effective mainly within the electron trapping zone, an ionization region (IR), defined by the magnet configuration. Here, the average extension and the volume of the IR are determined based on measuring the optical emission from an excited level of the argon working gas atoms. For particular HiPIMS conditions, argon species ionization and excitation processes are assumed to be proportional. Hence, the light emission from certain excited atoms is assumed to reflect the IR extension. The light emission was recorded above a 100 mm diameter titanium target through a 763 nm bandpass filter using a gated camera. The recorded images directly indicate the effect of the magnet configuration on the average IR size. It is observed that the shape of the IR matches the shape of the magnetic field lines rather well. The IR is found to expand from 10 and 17 mm from the target surface when the parallel magnetic field strength 11 mm above the racetrack is lowered from 24 to 12 mT at a constant peak discharge current., QC 20230821

The ionization region model (IRM) is applied to model a high power impulse magnetron sputtering discharge with a tungsten target. The IRM gives the temporal variation of the various species and the average electron energy, as well as internal discharge parameters such as the ionization probability and the back-attraction probability of the sputtered species. It is shown that an initial peak in the discharge current is due to argon ions bombarding the cathode target. After the initial peak, the W+ ions become the dominating ions and remain as such to the end of the pulse. We demonstrate how the contribution of the W+ ions to the total discharge current at the target surface increases with increased discharge voltage for peak discharge current densities J (D,peak) in the range 0.33-0.73 A cm(-2). For the sputtered tungsten the ionization probability increases, while the back-attraction probability decreases with increasing discharge voltage. Furthermore, we discuss the findings in terms of the generalized recycling model and compare to experimentally determined deposition rates and find good agreement., Funding Agencies|Icelandic Research Fund [196141]; Free State of Saxony; European Regional Development Fund [100336119]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]

Population densities of excited states of argon atoms in a high power impulse magnetron sputtering (HiPIMS) discharge are examined using a global discharge model and a collisional-radiative model. Here, the ionization region model (IRM) and the Orsay Boltzmann equation for electrons coupled with ionization and excited states kinetics (OBELIX) model are combined to obtain the population densities of the excited levels of the argon atom in a HiPIMS discharge. The IRM is a global plasma chemistry model based on particle and energy conservation of HiPIMS discharges. OBELIX is a collisional-radiative model where the electron energy distribution is calculated self-consistently from an isotropic Boltzmann equation. The collisional model constitutes 65 individual and effective excited levels of the argon atom. We demonstrate that the reduced population density of high-lying excited argon states scales with (p*)(-6), where p * is the effective quantum number, indicating the presence of a multistep ladder-like excitation scheme, also called an excitation saturation. The reason for this is the dominance of electron impact processes in the population and de-population of high-lying argon states in combination with a negligible electron-ion recombination., QC 20220224

The magnetic field is a key feature that distinguishes magnetron sputtering from simple diode sputtering. It effectively increases the residence time of electrons close to the cathode surface and by that increases the energy efficiency of the discharge. This becomes apparent in high power impulse magnetron sputtering (HiPIMS) discharges, as small changes in the magnetic field can result in large variations in the discharge characteristics, notably the peak discharge current and/or the discharge voltage during a pulse. Here, we analyze the influence of the magnetic field on the electron density and temperature, how the discharge voltage is split between the cathode sheath and the ionization region, and the electron heating mechanism in a HiPIMS discharge. We relate the results to the energy efficiency of the discharge and discuss them in terms of the probability of target species ionization. The energy efficiency of the discharge is related to the fraction of pulse power absorbed by the electrons. Ohmic heating of electrons in the ionization region leads to higher energy efficiency than electron energization in the sheath. We find that the electron density and ionization probability of the sputtered species depend largely on the discharge current. The results suggest ways to adjust electron density and electron temperature using the discharge current and the magnetic field, respectively, and how they influence the ionization probability., QC 20211028

Magnetron sputtering combines a glow discharge with sputtering from a target that simultaneously serves as a cathode for the discharge. The electrons of the discharge are confined between overarching magnetic field lines and the negatively biased cathode. As the target erodes during the sputter process, the magnetic field strengthens in the cathode vicinity, which can influence discharge parameters with the risk of impairing reproducibility of the deposition process over time. This is of particular concern for high-power impulse magnetron sputtering (HiPIMS) as the discharge current and voltage waveforms vary strongly with the magnetic field strength. We here discuss ways to limit the detrimental effect of target erosion on the film deposition process by choosing an appropriate mode of operation for the discharge. The goal is to limit variations of two principal flux parameters, the deposition rate and the ionized flux fraction. As an outcome of the discussion, we recommend operating HiPIMS discharges by maintaining the peak discharge current constant., QC 20220707

The ionization region model (IRM) is applied to model a high power impulse magnetron sputtering discharge in argon with a graphite target. Using the IRM, the temporal variation of the various species and the average electron energy, as well as internal parameters such as the ionization probability, back-attraction probability, and the ionized flux fraction of the sputtered species, is determined. It is found that thedischarge develops into working gas recycling and most of the discharge current at the cathode target surface is composed of Ar+ ions, which constitute over 90% of the discharge current, while the contribution of the C+ ions is always small (<5%), even for peak current densities close to 3 A cm(-2). For the target species, the time-averaged ionization probability is low, or 13-27%, the ion back-attraction probability during the pulse is high (>92%), and the ionized flux fraction is about 2%. It is concluded that in the operation range studied here it is a challenge to ionize carbon atoms, that are sputtered off of a graphite target in a magnetron sputtering discharge, when depositing amorphous carbon films., QC 20211220

We apply the ionization region model (IRM) and the Orsay Boltzmann equation for electrons coupled with ionization and excited states kinetics (OBELIX) model to study the electron kinetics of a high power impulse magnetron sputtering (HiPIMS) discharge. In the IRM the bulk (cold) electrons are assumed to exhibit a Maxwellian energy distribution and the secondary (hot) electrons, emitted from the target surface upon ion bombardment, are treated as a high energy tail, while in the OBELIX the electron energy distribution is calculated self-consistently using an isotropic Boltzmann equation. The two models are merged in the sense that the output from the IRM is used as an input for OBELIX. The temporal evolutions of the particle densities are found to agree very well between the two models. Furthermore, a very good agreement is demonstrated between the bi-Maxwellian electron energy distribution assumed by the IRM and the electron energy distribution calculated by the OBELIX model. It can therefore be concluded that assuming a bi-Maxwellian electron energy distribution, constituting a cold bulk electron group and a hot secondary electron group, is a good approximation for modeling the HiPIMS discharge., QC 20210601

The possibility to optimize a high-power impulse magnetron sputtering (HiPIMS) discharge through mixing two different power levels in the pulse pattern is investigated. Standard HiPIMS pulses are used to create the ions of the film-forming material. After each HiPIMS pulse an off-time follows, during which no voltage (or, optionally, a reversed voltage) is applied, letting the remaining ions in the magnetic trap escape towards the substrate. After these off-times, a long second pulse with lower amplitude, in the dc magnetron sputtering range, is applied. During this pulse, which is continued up to the following HiPIMS pulse, mainly neutrals of the film-forming material are produced. This pulse pattern makes it possible to achieve separate optimization of the ion production, and of the neutral atom production, that constitute the film-forming flux to the substrate. The optimization process is thereby separated into two sub-problems. The first sub-problem concerns minimizing the energy cost for ion production, and the second sub-problem deals with how to best split a given allowed discharge power between ion production and neutral production. The optimum power split is decided by the lowest ionized flux fraction that gives the desired film properties for a specific application. For the first sub-problem we describe a method where optimization is achieved by the selection of five process parameters: the HiPIMS pulse amplitude, the HiPIMS pulse length, the off-time, the working gas pressure, and the magnetic field strength. For the second sub-problem, the splitting of power between ion and neutral production, optimization is achieved by the selection of the values of two remaining process parameters, the HiPIMS pulse repetition frequency and the discharge voltage of the low-power pulse., QC 20210301

The sideways (radial) deposition rate and ionized flux fraction in a high power impulse magnetron sputtering (HiPIMS) discharge are studied and compared to a dc magnetron sputtering (dcMS) discharge, while the magnetic field strength | B | and degree of balancing are varied. A significant deposition of the film forming material perpendicular to the target surface is observed for both sputter techniques. This sideways deposition decreases with increasing axial distance from the target surface. The sideways deposition rate is always the highest in dc operation, while it is lower for HiPIMS operation. The magnetic field strength has a strong influence on the sideways deposition rate in HiPIMS but not in dcMS. Furthermore, in HiPIMS operation, the radial ion deposition rate is always at least as large as the axial ion deposition rate and often around two times higher. Thus, there are a significantly higher number of ions traveling radially in the HiPIMS discharge. A comparison of the total radial as well as axial fluxes across the entire investigated plasma volume between the target and the substrate position allows for revised estimates of radial over axial flux fractions for different magnetic field configurations. It is here found that the relative radial flux of the film forming material is greater in dcMS compared to HiPIMS for almost all cases investigated. It is therefore concluded that the commonly reported reduction of the (axial) deposition rate in HiPIMS compared to dcMS does not seem to be linked with an increase in sideways material transport in HiPIMS., QC 20200525

In high power impulse magnetron sputtering (HiPIMS) operation, there are basically two goals: a high ionized flux fraction of the sputtered target material and a high deposition rate. In this work, it is demonstrated that the former always comes at the cost of the latter. This makes a choice necessary, referred to as the HiPIMS compromise. It is here proposed that this compromise is most easily made by varying the discharge current amplitude, which opens up for optimization of additionally four external process parameters: the pulse length, the working gas pressure, the magnetic field strength, and the degree of magnetic unbalance to achieve the optimum combination of the ionized flux fraction and the deposition rate. As a figure of merit, useful for comparing different discharges, ( 1 - beta t ) is identified, which is the fraction of ionized sputtered material that escapes back-attraction toward the cathode target. It is shown that a discharge with a higher value of ( 1 - beta t ) always can be arranged to give better combinations of ionization and deposition rate than a discharge with a lower ( 1 - beta t ). Maximization of ( 1 - beta t ) is carried out empirically, based on data from two discharges with Ti targets in Ar working gas. These discharges were first modeled in order to convert measured plasma parameters to values of ( 1 - beta t ). The combined effects of varying the different process parameters were then analyzed using a process flow chart model. The effect of varying the degree of unbalance in the studied range was small. For the remaining three parameters, it is found that optimum is achieved by minimizing the magnetic field strength, minimizing the working gas pressure, and minimizing the pulse length as far as compatible with the requirement to ignite and maintain a stable discharge., QC 20200525

High power impulse magnetron sputtering (HiPIMS) is an ionized physical vapour deposition technique. While HiPIMS provides a high flux of metal ions to the substrate, the disadvantage is a reduced deposition rate compared to direct current magnetron sputtering (dcMS) at equal average power. This is mainly due to the high target back-attraction probability of the metal ions with typical values in the range 70%-90% during the pulse. In this work, we investigate how to reduce this effect by quantifying the contribution of the metal ion flux after each HiPIMS pulse, a period also known as afterglow. Without a negative potential on the target at this stage of the HiPIMS process, the back-attracting electric field disappears allowing remaining ions to escape the ionization region. In order to analyze the fate of the film-forming ions, we extend the time-dependent ionization region model (IRM) by adding consideration of an afterglow. This approach allows to distinguish between fluxes from the ionization region during the pulse and during the afterglow. We show that by shortening the pulse length of a titanium HiPIMS discharge, the contribution to the outward flux of film-forming species from the afterglow increases significantly. The IRM predicts a gain in deposition rate of 46% and 47% for two discharges with different peak discharge currents, when using 40 mu s compared to 100 mu s-long pulses at the same average power. This is without compromising the ionized flux fraction that remains constant for the range of pulse lengths investigated here., QC 20200608

We explored the effect of magnetic field strength (Formula presented.) and geometry (degree of balancing) on the deposition rate and ionized flux fraction (Formula presented.) in dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) when depositing titanium. The HiPIMS discharge was run in two different operating modes. The first one we refer to as “fixed voltage mode” where the cathode voltage was kept fixed at 625 V while the pulse repetition frequency was varied to achieve the desired time average power (300 W). The second mode we refer to as “fixed peak current mode” and was carried out by adjusting the cathode voltage to maintain a fixed peak discharge current and by varying the frequency to achieve the same average power. Our results show that the dcMS deposition rate was weakly sensitive to variations in the magnetic field while the deposition rate during HiPIMS operated in fixed voltage mode changed from 30% to 90% of the dcMS deposition rate as (Formula presented.) decreased. In contrast, when operating the HiPIMS discharge in fixed peak current mode, the deposition rate increased only slightly with decreasing (Formula presented.). In fixed voltage mode, for weaker (Formula presented.), the higher was the deposition rate, the lower was the (Formula presented.). In the fixed peak current mode, both deposition rate and (Formula presented.) increased with decreasing (Formula presented.). Deposition rate uniformity measurements illustrated that the dcMS deposition uniformity was rather insensitive to changes in (Formula presented.) while both HiPIMS operating modes were highly sensitive. The HiPIMS deposition rate uniformity could be 10% lower or up to 10% higher than the dcMS deposition rate uniformity depending on (Formula presented.) and in particular the magnetic field topology. We related the measured quantities, the deposition rate and ionized flux fraction, to the ionization probability (Formula presented.) and the back attr, QC 20240705

Quantification and control of the fraction of ionization of the sputtered species are crucial in magnetron sputtering, and in particular in high-power impulse magnetron sputtering (HiPIMS), yet proper definitions of the various concepts of ionization are still lacking. In this contribution, we distinguish between three approaches to describe the degree (or fraction) of ionization: the ionized flux fraction F-flux, the ionized density fraction F-density, and the fraction a of the sputtered metal atoms that become ionized in the plasma (sometimes referred to as probability of ionization). By studying a reference HiPIMS discharge with a Ti target, we show how to extract absolute values of these three parameters and how they vary with peak discharge current. Using a simple model, we also identify the physical mechanisms that determine F-flux, F-density, and a as well as how these three concepts of ionization are related. This analysis finally explains why a high ionization probability does not necessarily lead to an equally high ionized flux fraction or ionized density fraction., QC 20181106

Infrequent, bursty, electromagnetic, whistler-mode wave packets, excited spontaneously in the laboratory by an electron beam from a hot cathode, appear transiently, each with a time duration tau around similar to 1 mu s. The wave packets have a center frequency f(W) that is broadly distributed in the range 7 MHz < f(W) < 40 MHz. They are excited in a region with separate electrostatic (es) plasma oscillations at values of f(hf), 200 MHz < f(hf) < 500 MHz, that are hypothesized to match eigenmode frequencies of an axially localized hf es field in a well-defined region attached to the cathode. Features of these es-eigenmodes that are studied include: the mode competition at times of transitions from one dominating es-eigenmode to another, the amplitude and spectral distribution of simultaneously occurring es-eigenmodes that do not lead to a transition, and the correlation of these features with the excitation of whistler mode waves. It is concluded that transient coupling of es-eigenmode pairs at f(hf) such that vertical bar f(1, hf) - f(2, hf)vertical bar = f(W) < f(ge) can explain both the transient lifetime and the frequency spectra of the whistler-mode wave packets (f(W)) as observed in lab. The generalization of the results to bursty whistler-mode excitation in space from electron beams, created on the high potential side of double layers, is discussed., QC 20171130

The oxygen dynamics in a reactive Ar/O2high power impulse magnetron sputtering discharge hasbeen studied using a new reactive ionization region model. The aim has been to identify thedominating physical and chemical reactions in the plasma and on the surfaces of the reactoraffecting the oxygen plasma chemistry. We explore the temporal evolution of the density of theground state oxygen molecule O2ðX1RgÞ, the singlet metastable oxygen molecules O2ða1DgÞandO2ðb1RgÞ, the oxygen atom in the ground state O(3P), the metastable oxygen atom O(1D), thepositive ions Oþ2and Oþ, and the negative ion O. We furthermore investigate the reaction ratesfor the gain and loss of these species. The density of atomic oxygen increases significantly as wemove from the metal mode to the transition mode, and finally into the compound (poisoned) mode.The main gain rate responsible for the increase is sputtering of atomic oxygen from the oxidizedtarget. Both in the poisoned mode and in the transition mode, sputtering makes up more than 80%of the total gain rate for atomic oxygen. We also investigate the possibility of depositingstoichiometric TiO2in the transition mode., QC 20170410

Summary form only given. The magnetron sputtering discharge is a highly successful tool for deposition of thin films and coatings. It has been applied for various industrial applications for over four decades. Sustaining a plasma in a magnetron sputtering discharge requires energy transfer to the plasma electrons. In the past, the magnetron sputtering discharge has been assumed to be maintained by cathode sheath acceleration of secondary electrons emitted from the target, upon ion impact. These highly energetic electrons then either ionize the atoms of the working gas directly or transfer energy to the local lower energy electron population that subsequently ionizes the working gas atoms. This leads to the well-known Thornton equation, which in its original form is formulated to give the minimum required voltage to sustain the discharge. However, recently we have demonstrated that Ohmic heating of electrons outside the cathode sheath is typically of the same order as heating due to acceleration across the sheath in dc magnetron sputtering (dcMS) discharges. The secondary electron emission yield γsee is identified as the key parameter determining the relative importance of the two processes. In the case of dcMS Ohmic heating is found to be more important than sheath acceleration for secondary electron emission yields below around 0.1. For the high power impulse magnetron sputtering (HiPIMS) discharge we find that direct Ohmic heating of the plasma electrons is found to dominate over sheath acceleration by typically an order of magnitude, or in the range of 87 - 99 % of the total electron heating. A potential drop of roughly 100 - 150 V, or 15 - 25% of the discharge voltage, always falls across the plasma outside the cathode sheath., QC 20181214

The combined processes of self-sputter (SS)-recycling and process gas recycling in high power impulse magnetron sputtering (HiPIMS) discharges are analyzed using the generalized recycling model (GRM). The study uses experimental data from discharges with current densities from the direct current magnetron sputtering range to the HiPIMS range, and using targets with self-sputter yields Y-SS from approximate to 0.1 to 2.6. The GRM analysis reveals that, above a critical current density of the order of J(crit) approximate to 0.2 A cm(-2), a combination of self-sputter recycling and gas-recycling is generally the case. The relative contributions of these recycling mechanisms, in turn, influence both the electron energy distribution and the stability of the discharges. For high self-sputter yields, above Y-SS approximate to 1, the discharges become dominated by SS-recycling, contain few hot secondary electrons from sheath energization, and have a relatively low electron temperature T-e. Here, stable plateau values of the discharge current develop during long pulses, and these values increase monotonically with the applied voltage. For low self-sputter yields, below Y-SS approximate to 0.2, the discharges above J(crit) are dominated by process gas recycling, have a significant sheath energization of secondary electrons and a higher T-e, and the current evolution is generally less stable. For intermediate values of YSS the discharge character gradually shifts between these two types. All of these discharges can, at sufficiently high discharge voltage, give currents that increase rapidly in time. For such cases we propose that a distinction should be made between 'unlimited' runaway and 'limited' runaway: in unlimited runaway the current can, in principle, increase without a limit for a fixed discharge voltage, while in limited runaway it can only grow towards finite, albeit very high, levels. For unlimited runway Y-SS > 1 is found to be a necessary criterion, independen, QC 20171211

The time-dependent plasma discharge ionization region model (IRM) has been under continuous development during the past decade and used in several studies of the ionization region of high-power impulse magnetron sputtering (HiPIMS) discharges. In the present work, a complete description of the most recent version of the IRM is given, which includes improvements, such as allowing for returning of the working gas atoms from the target, a separate treatment of hot secondary electrons, addition of doubly charged metal ions, etc. To show the general applicability of the IRM, two different HiPIMS discharges are investigated. The first set concerns 400 μs long discharge pulses applied to an Al target in an Ar atmosphere at 1.8 Pa. The second set focuses on 100 μs long discharge pulses applied to a Ti target in an Ar atmosphere at 0.54 Pa, and explores the effects of varying the magnetic field strength. The model results show that -ions contribute negligibly to the production of secondary electrons, while -ions effectively contribute to the production of secondary electrons. Similarly, the model results show that for an argon discharge with Al target the contribution of Al+-ions to the discharge current at the target surface is over 90% at 800 V. However, at 400 V the Al+-ions and Ar+-ions contribute roughly equally to the discharge current in the initial peak, while in the plateau region Ar+-ions contribute to roughly of the current. For high currents the discharge with Al target develops almost pure self-sputter recycling, while the discharge with Ti target exhibits close to a 50/50 combination of self-sputter recycling and working gas-recycling. For a Ti target, a self-sputter yield significantly below unity makes working gas-recycling necessary at high currents. For the discharge with Ti target, a decrease in the B-field strength, resulted in a corresponding stepwise increase in the discharge resistivity., QC 20180112

A new reactive ionization region model (R-IRM) is developed to describe the reactive Ar/O-2 high power impulse magnetron sputtering (HiPIMS) discharge with a titanium target. It is then applied to study the temporal behavior of the discharge plasma parameters such as electron density, the neutral and ion composition, the ionization fraction of the sputtered vapor, the oxygen dissociation fraction, and the composition of the discharge current. We study and compare the discharge properties when the discharge is operated in the two well established operating modes, the metal mode and the poisoned mode. Experimentally, it is found that in the metal mode the discharge current waveform displays a typical non-reactive evolution, while in the poisoned mode the discharge current waveform becomes distinctly triangular and the current increases significantly. Using the R-IRM we explore the current increase and find that when the discharge is operated in the metal mode Ar+ and Ti+ -ions contribute most significantly (roughly equal amounts) to the discharge current while in the poisoned mode the Ar+ -ions contribute most significantly to the discharge current and the contribution of O+ -ions, Ti+ -ions, and secondary electron emission is much smaller. Furthermore, we find that recycling of atoms coming from the target, that are subsequently ionized, is required for the current generation in both modes of operation. From the R-IRM results it is found that in the metal mode self-sputter recycling dominates and in the poisoned mode working gas recycling dominates. We also show that working gas recycling can lead to very high discharge currents but never to a runaway. It is concluded that the dominating type of recycling determines the discharge current waveform., QC 20161129

Sustaining a plasma in a magnetron discharge requires energization of the plasma electrons. In this work, Ohmic heating of electrons outside the cathode sheath is demonstrated to be typically of the same order as sheath energization, and a simple physical explanation is given. We propose a generalized Thornton equation that includes both sheath energization and Ohmic heating of electrons. The secondary electron emission yield gamma(SE) is identified as the key parameter determining the relative importance of the two processes. For a conventional 5 cm diameter planar dc magnetron, Ohmic heating is found to be more important than sheath energization for secondary electron emission yields below around 0.1., QC 20170102

Summary form only given. The understanding of the current waveform for the non-reactive HiPIMS discharge is now rather well established [1,2]. It is described by a rise in the current to an initial peak and then a drop followed by a stable plateau. The drop is a result of a strong gas compression due to the sudden large flux of atoms from the target. For the reactive HiPIMS discharge striking differences are observed and those seem to depend on the mode of operation, the reactive gas and the target material. The discharge current waveform changes in shape as well as in the peak value when the target surface enters the poisoned mode. For Ar/O2 discharge with Ti target the discharge current waveform varies with oxygen partial pressure and pulse repetition frequency [3]. For the higher repetition frequencies the familiar nonreactive current waveform is observed. As the repetition frequency is lowered there is an increase in the current which transits into a different waveform as the repetition frequency is decreased further. The waveform observed at low repetition frequency is similar to the one observed at high reactive gas flow rate. Similarly, the current waveform in the reactive Ar/N2 HiPIMS discharge with Ti target is highly dependent on the pulse repetition frequency and the current is found to increase significantly as the frequency is lowered [4]. However, the discharge current keeps its shape and it remains as for the non-reactive case as the current increases. These findings will be compared with results for various combinations of gas mixtures and targets found in the literature [5]. Furthermore, we explore the current waveform in reactive HiPIMS using the ionization region model (IRM) [6] of the reactive Ar/O2 discharge with a Ti target. We discuss the current waveform development and how the discharge composition varies between metal and poisoned mode., QC 20170202