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In this paper we recall and comment, aiming to help understanding, the model assumptions underlying the undertaking specific parameter (USP) method 1 as defined in the Solvency II regulation. In addition we propose an adjusted standard deviation estimator which also take into account the (estimated) portfolio volume of the solvency year under consideration. Moreover we present a closed-form formula for approximating the USP and provide some numerical examples based on real data showing the goodness of the approximation. This is a useful result for practicing actuaries since it allows to approximate the USP without performing any numerical optimization.

With the recent advances made in monochromation of electron sources and Cs-correction, the point resolution of the transmission electron microscope (TEM) has been extended into the sub-Angstrom regime. This development has led to an important consequence—that specimen preparation has become a more critical issue for the materials scientist. Nanoscale artifacts that could be tolerated a few years ago when imaging in the 0.1–0.15 nm range can no longer be allowed. An example is hydrocarbon contamination, which although only a few monolayers thick, obscures the area of interest. Other examples include residual deformation and oxidation following traditional mechanical methods. Ion-based methods may induce amorphization and implantation defects, depending on the type of ion, its energy, and the particular protocol that is used.

A packaged device based on a ball grid array or other design presents a challenge to the failure analyst. Accessing one of the metal levels from the topside requires decapsulation by either a wet, predominantly dry (RIE) or a completely dry (mechanical) treatment. To reveal the details of the gate including the gate oxide, new approaches to selective etch delineation by RIE are required. This article presents an automated sample preparation method for packaged microelectronic materials by combining plasma cleaning, ion beam etching, reactive ion etching and ion beam sputter coating. A single etch gas chemistry was effective in phase delineation by RIE. Future work to further delineate the gate oxides could support accurate metrology by means of FESEM rather than field emission transmission electron microscope.

The SiLK resins, composed of aromatic hydrocarbons, are a family of highly cross-linked thermoset polymers with isotropic dielectric properties. Patterning of SiLK for high aspect ratio copper interconnects has depended on reactive ion etching with oxygen/nitrogen gas mixtures. Reactive ion etching is therefore also accomplished with reducing plasmas such as nitrogen/hydrogen. An additional plasma cleaning step can be inserted after the reactive ion etching (RIE) step, so that any residual contamination is removed prior to imaging or final sputter coating. Automated sample preparation of microelectronic materials containing high and low-k dielectrics for FESEM is accomplished in this article by combining these techniques: plasma cleaning, ion beam etching, and reactive ion etching. A single RIE chemistry was effective in etching both dielectrics as well as delineating the other phases present.

Since its introduction as a complement to the Focused Ion Beam (FIB) in 2004, an increasing number of applications have been developed for use of a concentrated Ar ion beam with a diameter on the order of 1 μm. [1 – 11] The material systems that have benefited from such a technique have included metallics, nonmetallics and ceramics. The material properties studied have ranged from those of the bulk to those which vary on the atomic scale. Knowledge of single, multiple and layered phase chemistries has been enhanced. The identification of interphase interfaces in highly ordered crystalline materials has also been aided. Following final FIB milling with 2 5keV Ga ions, thin (0.5 – 2 nm) damaged surface layers are detected during subsequent electron microscopy. [12] These layers contain amorphous material and implanted Ga ions, with the distribution dependent upon the particular specimen and preparation protocol. Unless the damaged layer thickness can be reduced or eliminated, artifacts will occur during imaging and analysis in the transmission electron microscope (TEM). The effect is more severe if the specimen is viewed at the higher resolution possible with aberration correction. A survey of the significant improvements gained in image quality and analytical results will be presented. A majority of these results were obtained using a subset of the possible operating conditions: Ion Beam Diameter = 1 – 4 μm, Ion Beam Energy = 100 – 1000 eV, Incident Angles = ±10 . The specimen was maintained at a temperature between 25 and -175C depending on the application.

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Analysis of the integrated circuits of a microelectronic device depends on delayering. Focused ion beam (FIB) or broad ion beam (BIB) milling are effective complementary methods of delayering. FIB provides higher removal rates, but is limited in the effective area that can be revealed per unit time, while BIB provides lower removal rates, but has the advantage with respect to the size of the field of view produced. Microstructural features and the appearance of defects were identified and tracked for two model systems: Cu vias and Cu TSVs (through-silicon vias).

Standard analytical practice in the semiconductor industry depends on fast, efficient and reliable sample preparation prior to FESEM. “In lens” imaging technology and orientation mapping (EBSD) demand sample surfaces free of physical damage and residual contamination. An integrated preparation tool has been developed that incorporates the functionality necessary for argon – oxygen plasma cleaning, ion beam etching (IBE), reactive ion beam etching (RIBE), reactive ion etching (RIE), and ion beam sputter coating (IBSC). Control, monitoring and sequential automation of the processes is accomplished through a novel combination of software and hardware. FESEM results for Al and Cu based microelectronic materials will be discussed, as well as EBSD results for bulk metals. Improvements in throughput and subsequent materials characterization will be demonstrated.