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The relationship of homophobia and gender role conflict to male rape myth acceptance was investigated using a sample of 210 adult men from a Midwestern community. A hierarchical multiple regression analysis was conducted to determine the ability of certain variables to predict adherence to male rape myths. Those variables were homophobia; success, power, and competition attitudes; restrictive affectionate behavior between men; restrictive emotionality; and conflicts between work and family relationships. Results indicated that greater adherence to rape myths was related to homophobia and more success, power, and competitive attitudes. Additionally, older participants and participants with lower levels of education were more likely to endorse greater adherence to rape myths. Implications of this research include the necessity for more research on male rape myth acceptance, for implementation of educational programs and changes in the socialization process to help dispel these myths, and for mental health counselors to provide unbiased and gender-responsive treatment modalities to male victims who seek help.

The sexual assault of men is an important issue that has been underexamined in the counseling literature. Regarding the scope of the problem, the available research suggests that men constitute at least 5% to 10% of all sexual assault victims (Coxell & King, 1996; Forman, 1983; Pino & Meier, 1999). Isely and Gehrenbeck-Shim (1997) found that a group of 172 social service agencies across the United States reported seeing more than 3,600 male sexual assault victims between the years 1972 and 1991, with nearly half of these victims being seen in 1991 alone. Kaufman, Divasto, Jackson, Voorhees, and Christy (1980) reported up to a 10% increase in the number of male victims seeking help in a medical center in New Mexico within a 3-year period. Sorenson, Stein, Siegel, Golding, and Burnam (1987) found that 107 out of 1,480 men interviewed about their past sexual experience (approximately 7%) had experienced at least one incident of a forced or coerced sexual contact as an adult. Struckman-Johnson (1991) found that 34% of a sample of 204 male university students reported having experienced at least one coercive sexual situation since the age of 16. These figures stand in sharp contrast to the typical misperception of many laypersons that sexual assault against men typically occurs only in prison or other institutional settings (Donnelly & Kenyon, 1996) and underscore the fact that sexual assault against men likely occurs with a greater frequency than most people realize. Male rape victims may underreport or fail to report assaults for a variety of reasons including fear of being disbelieved, gender role expectations, lack of available treatment, and sexual identity confusion (Donnelly & Kenyon, 1996; Groth & Burgess, 1980; King, 1992; Mezey & King, 1989). This is an unfortunate state of affairs given that male rape victims have been found to experience difficulties related to sexual assault that are very similar to those experienced by sexually assaulted women, including the occurrence of posttraumatic stress disorder (Rogers, 1997). Male rape victims may feel an increased sense of vulnerability and anger or irritability, confusion over their sexual orientation, a loss of self-respect, emotional distance from others, sexual dysfunction, and rape-related phobia (Mezey & King, 1989). Male rape victims also have a higher likelihood of sustaining more physical injuries in an assault, are often victimized by more than one assailant, and tend to seek medical attention for secondary injuries without reporting the rape (Isely & Gehrenbeck-Shim, 1997; Kaufman et al., 1980). Similar to their female counterparts, when male victims of rape do report assaults, they may encounter "blame the victim" types of attitudes and people who subscribe to various myths surrounding rape. Rape myths have been defined as prejudicial, stereotyped, or false beliefs about rape, rape victims, or rapists, and acceptance of rape myths is associated with such factors as gender role stereotyping, sexual conservatism, and an acceptance of interpersonal violence (Burr, 1980, 1991). Greater acceptance of rape myths has also been associated with a greater willingness to attribute blame to a victim of sexual assault (Kopper, 1996). Investigators (cf. Gilmartin-Zena, 1988) have also found sex differences in the acceptance of rape myths and willingness to assign blame to the victim for a rape, with women significantly more likely to reject rape myths than are men and men being more willing to attribute blame to victims of sexual assault than are women (e.g., Cowan & Curtis, 1994; McCaul, Veltum, Boyechko, & Crawford, 1990; Schult & Schneider, 1991). Whatley and Riggio (1993) investigated the effect of sex on willingness to attribute blame to a male rape victim and found that men more than women tended to blame male rape victims. In addition to sex, the amount of physical resistance exerted by a sexual assault victim during a rape has also been shown to influence both the amount of blame people are willing to assign to the victim for the attack and the extent to which people view the assault as a crime (cf. …

A new electrode structure with two additional middle-electrodes running in-between the interdigitated electrodes, is presented. With this structure, the voltage drops at these middle-electrodes are measured as well as the conductivity of a screen printed n-type WO 3 /TiO 2 mixed oxide layer. The gas-sensing properties to NO x , CH x and CO are determined at 300 °C. It is shown that with this four-point structure, different sensor regions, namely the pure semiconducting layer and the interface electrode/semiconductor, can be separated and different gas-sensing properties can be determined for this regions. Additionally, by evaluating the signals at the middle-electrodes, single gases in gas mixtures can be detected and discriminated.

We present a fabrication process for a family of thermal microsensors and microactuators based on a porous silicon sacrificial layer technology. In contrast to previous work on porous-silicon-based micromachining processes, our process is modularized into a complementary metal-oxide semiconductor (CMOS) compatible front-end and a sensor- or actuator-specific back-end module. The front-end module yields silicon hotplate structures which can be fabricated in typical CMOS foundries. Such hotplates are characterized by high mechanical strength and good thermal insulation. High levels of thermal insulation are attained by employing extremely deep sacrificial layers approaching the wafer thickness. We show that different kinds of thermal microsensors and microactuators can be produced using identical front-end modules. The adaptation of the microstructures to different application needs can be performed in a small number of sensor- or actuator-specific back-end processes. We propose that such modularization schemes allow small- and medium-sized companies, with specialized application know-how and access to limited-size markets, to benefit from the mass fabrication capabilities of modern silicon foundries.

The fabrication of structures with dimensions down to the submicron range is already well known in standard microelectronics. There is however an additional exponentially increasing interest in the realisation of such nanostructures not only for basic research but also for industrial application in form of so called micro electromechanically machined systems (MEMS) and biological and medical use. But due to the 3D-structures in these MEMS as well as the application of material not compatible to CMOS-technology more sophisticated technology is necessary than e.g. for standard microelectronics. The corresponding lithographic, wet and plasma etching problems are discussed. Especially for basic research and thin film characterisation there exsists an interesting novel microsystem, the scanning probe microscope (spm). A sensor, e.g. cantilever with tip of nanometer apex, is scanned over the substrate and the substrate tip interaction is recorded. This system allows to measure the mechanical, thermal, electrical, magnetic and optical properties of the substrate with highest possible lateral resolution, often down to the atomic level. But the reproducable fabrication of the corresponding sensors with acceptable performances is a high technological challenge and needs new applications of thin films. This will be demonstrated for passive and active spm-sensors.

This paper describes the scientific objectives and the basic concept of the instrument MIDAS, which has been selected for the preliminary payload of the Rosetta Orbiter. The instrument is considered essential for this mission as, for the first time, it has the capability of three dimensional imaging of interplanetary and pristine cometary particles in the nanometer to micrometer range. According to cometary dust models and experience gained from Giotto and VEGA, it appears that there is an abundance of particles in this size range, which also covers the building blocks of pristine interplanetary dust particles. Some models assume that they consist of silicate core particles (0.1 – 0.2 μm diameter) and ≈ 0.01 μm refractory organic mantles. The instrument will collect and image particles by atomic force microscopy and provide morphological and statistical information on the dust population, including texture, shape, size and flux. MIDAS is based on an atomic force microscope (AFM), a type of scanning microprobe capable of three-dimensional imaging of small structures. The instrument features a dust collector wheel with ≈200 facets on its perimeter, each providing hundreds of independent scan areas of up to 50 by 50 μm. The dust collector points to the comet and collects particles drifting outward from the cometary surface. Although the AFM is a proven laboratory technology, MIDAS will be its first application in space. An extensive design verification programme has been initiated.

This paper reports on the development of a dry etching based HARMS-Technology which will offer the potential to manufacture micro-engines, micro-turbines, micro-sensors, micro-actuators, and electronic circuits onto a single silicon IC chip. This technology is based on the highly anisotropic and selective dry etching of Si-monocrystals. The suitability of reactive ion etching for the fabrication of micro electro mechanical systems (MEMS) has been evaluated by characterising the change of lateral dimensions vs. depth in etching deep structures in silicon. Fluorine, chlorine and bromine containing gases have provided the basis for this investigation. A conventional planar RIE (Reactive Ion Etching) reactor has been used, in some cases with magnetic field enhancement or ICP (Inductive Coupled Plasma) Source and low substrate temperature. For reactive ion etching based on Cl2 or Cl2/HBr plasma a slightly “positive” (top wider than bottom) slope is achieved when etching structures with a depth of several 10 μm, whereas a “negative” slope is obtained when etching with an SF6/CCl2F2 based plasma. Pattern transfer with vertical walls is obtained for reactive ion etching based on SF6 (with O2 added) when maintaining the substrate at low temperature (in range ≈−100 °C). Further optimisation of plasma chemistries and reactive ion etching procedures should result in runouts in the order or 0.1 μm/100 μm depth in Si as well as in organic materials. Etching processes for HARMST is demonstrated in the realisation in Si microturbine. Axes or stators (nonmoving parts) are etched into the initial Si-wafer. The movable parts (rotors, beams, etc.) are prepared from electro-chemically etched Si-membranes with defined thicknesses that, all movable parts are created lithographically on the SiNxOy surface. This is followed by dry etching the mono-crystalline Si-membrane down to the SiNxOy sacrificial layer on the back side of the membrane by an RIE-process. The wafer with the movable parts is flipped onto the wafer with the already etched axis and then positioned and centred. The SiNxOy-sacrificial layer is then dissolved by a chemical wet or vapour etch process. Subsequent bonding with a Pyrex glass wafer seals the parts.

The properties of a Pd—Au complex in n-type Si are investigated by DLTFS (deep level transient Fourier spectroscopy) techniques. In n-type Si the energy level of the Pd—Au complex is slightly shifted with isochronal annealing and does not display stable properties. The defect reaction of Pd—Au is explained by an “enhanced kick-out” mechanism represented by the reaction equation Aui + Pds Aus + Pdi, where interstitially diffusing gold replaces substitutional palladium. This reaction is similar to the Au—Rh defect reaction. The results of the investigations of the properties of the Pd—Au complex in p-type Si will be published later. Die elektrischen Eigenschaften des Pd—Au-Komplexes in n-Si werden mit dem DLTFS (deep level transient Fourier spectroscopy) Verfahren untersucht. Die Energieniveaus dieses Komplexes in n-Si verschieben sich bei Temperung und sind bei hohen Temperaturen nicht stabil. Die Pd—Au-Reaktion wird durch den “enhanced kick-out” Mechanismus erklart, der durch die Reaktionsgleichung Aui + Pds Aus + Pdi beschrieben wird, wobei interstitiell diffundierendes Gold substitutionelles Pd ersetzt. Diese Reaktion entspricht der Au—Rh-Reaktion. Die Ergebnisse der elektrischen Eigenschaften des Pd—Au-Komplexes in p-Si werden demnachst veroffentlicht.

Metalorganic vapour-phase epitaxy (MOVPE) growth experiments for GaAs and (AlGa)As have been performed as a function of growth temperature and V/III ratio using the new alternative precursor diethyl-tert-butylarsin (DEtBAs) in combination with trimethylgallium (TMGa) and trimethylaluminium (TMAl). The incorporation of deep traps has been investigated by means of photoluminescence (PL) and deep level transient Fourier spectroscopy (DLTFS). In (AlGa)As layers grown with DEtBAs a drastic reduction of the deep broad band luminescence between 1.5 and 2 eV is observed in dependence of the growth conditions. A probably deep complex defect involving an As vacancy is observed in (AlGa)As layers grown with DEtBAs. In GaAs layers grown with DEtBas or AsH 3 the dominant deep trap is the EL2 defect. Deep level photoluminescence studies show a reduced incorporation of the EL2 defect as compared to AsH 3 grown layers, due to the smaller V/III ratio. The obtained low deep defect concentration in particular for GaAs layers underlines the great potential of the model precursor DEtBAs as substitute for the highly toxic AsH 3 in MOVPE

The performance of the AZ PF 514 positive resist in single-layer electron-beam lithography (EBL) and reactive ion etching (RIE) has been investigated. The fabrication possibilities of silicon micromechanical parts and structures with nanometer details are presented. The basic lithographic and pattern transfer properties are discussed.

The anisotropic magnetic resistance effect (AMR), i.e. the change in the electrical resistance of thin ferromagnetic films (e.g. Permalloy) with respect to the direction and amplitude of an external magnetic field is exploited for the fabrication of sensors sensitive for the measurement of lengths, distances, angles, electrical currents, and magnetic fields. The effect is described in a good approximation by R=R0-ΔR sin2 (ϕ) with ϕ the angle between the electrical current {ie47-1} and the magnetic field {ie47-2} in the thin film. The commercial application of this effect however makes great demands on the fabrication technology. The possibility of its optimization with respect to the sensitivity, and sensor stability (temperature dependence, offset, offset drift, hysteresis) is discussed in some detail.

The International Rosetta Mission is set for a rendezvous with Comet 67 P/Churyumov-Gerasimenko in 2014. On its 10 year journey to the comet, the spacecraft will also perform a fly-by of the two asteroids Stein and Lutetia in 2008 and 2010, respectively. The mission goal is to study the origin of comets, the relationship between cometary and interstellar material and its implications with regard to the origin of the Solar System. Measurements will be performed that shed light into the development of cometary activity and the processes in the surface layer of the nucleus and the inner coma. The Micro-Imaging Dust Analysis System (MIDAS) instrument is an essential element of Rosetta's scientific payload. It will provide 3D images and statistical parameters of pristine cometary particles in the nm-μm range from Comet 67P/Churyumov-Gerasimenko. According to cometary dust models and experience gained from the Giotto and Vega missions to 1P/Halley, there appears to be an abundance of particles in this size range, which also covers the building blocks of pristine interplanetary dust particles. The dust collector of MIDAS will point at the comet and collect particles drifting outwards from the nucleus surface. MIDAS is based on an Atomic Force Microscope (AFM), a type of scanning microprobe able to image small structures in 3D. AFM images provide morphological and statistical information on the dust population, including texture, shape, size and flux. Although the AFM uses proven laboratory technology, MIDAS is its first such application in space. This paper describes the scientific objectives and background, the technical implementation and the capabilities of MIDAS as they stand after the commissioning of the flight instrument, and the implications for cometary measurements.

The microimaging dust analysis system (MIDAS) will be part of the payload of ESA’s Rosetta spacecraft4 to explore comet Wirtanen between 2011 and 2013. The launch of the spacecraft will take place in early 2003. MIDAS is based on an atomic force microscope, a technique which has made rapid progress in recent years after the discovery of the principle in 1986 by Binnig et al.1 The main scientific objective of MIDAS concerns the microtextural and statistical analysis of cometary dust grains and the project will resolve surface features with a spatial resolution of 4 nm in x and y direction and better than 1 nm in the z-direction. The comparative simplicity and robustness of the technique lends itself to space applications. The capabilities of the instrument are tailored to studies of the cometary environment and will provide an insight into the physical properties of dust grains that are not accessible otherwise. The prominent anticipated results are the size and texture of individual cometary grains and their building blocks in the range 4 nm to 5 μm. In preparation of the mission, a comprehensive measurement program of cosmic spherules and interplanetary dust grains has been initiated in order to build up experience in analyzing extraterrestrial particles with this technique. We present a description of the microscope and initial results from our AFM measurements on extraterrestrial material.

The reproducible micromachining of hollow metal tips on Si cantilevers and their applicability to scanning probe microscopy techniques are described. Provided with apertures below 130 nm and hollow pyramidal tips proved to be highly suited probes for scanning near‐field optical microscopy (SNOM). First results of combined SFM/SNOM measurements together with scanning electron microscopy (SEM) photographs of the new sensors are presented. The SNOM images show a resolution of about 100 nm demonstrating the usefulness of these probes.

The authors report on a downstream PECVD (plasma-enhanced chemical vapor deposition) apparatus which allows low-temperature deposition of passivating and insulating films on III/V materials using silico organics as source compounds. In combination with an arrangement for the measurement of the integral photoluminescence signal, this apparatus allows process control and optimization in view of the electronic properties of the semiconductor surface. This technique allows deposition of silicon dioxide at a temperature below 150 degrees C. C(V) and I(V) measurements performed on SiO/sub 2//Si MIS capacitors showed the electronic characteristics of the oxide films to be satisfactory; C(V) curves of SiO/sub 2//InP capacitors revealed that the InP surface is not degraded by the deposition process. >

Results of a study of the suitability of various insulators in combination with various deposition techniques for the passivation of InP surfaces are presented. It is shown that among the techniques investigated, the best results were obtained with the remote plasma-enhanced chemical vapor deposition (PECVD) technique. The benefits of integral photoluminescence measurements for judging the influence of a variety of process steps during InP passivation on the semiconductor surface are discussed. >

A novel type of micromachined thermal mass flow sensor has been developed which is characterised by enhanced mechanical and thermal stability. For its realisation /spl beta/-SiC films were heteroepitaxially deposited onto pre-processed silicon wafers. After structuring the surface /spl beta/-SiC films to form heater and temperature sensing elements, porous silicon was formed in predetermined parts of the silicon substrate to form flow channels. The so formed devices are able to detect bidirectional flows of air with a temporal resolution of 2-3 msec. Due to the excellent mechanical and thermal stability of the /spl beta/-SiC heater and temperature sensing elements, the devices are able to sustain extremely harsh environmental and operating conditions: firstly, flows of pressurised air could be sustained without inflicting mechanical damage to the micromachined /spl beta/-SiC bridges, secondly, several hours of thermal cleaning at white glow in ambient air could be endured before breakages due to thermal oxidation occurred.

The demand to increase the bandwidth of very large scale integrated circuits for future applications in computer and communication electronics has led to device structure dimensions in the sub-micrometer range. The ability of the device materials to withstand stress due to the growing electrical and thermal loading will be of particular importance. The design optimization as well as the material analysis thus demand analytical tools with high lateral resolution, high bandwidth capability, and high sensitivity. In this paper we demonstrate that scanning probe microscopy (SPM) employing integrated probes is a promising candidate for not only imaging topography but simultaneously electrical and thermal device properties. For voltage contrast imaging a coplanar waveguide cantilever was designed and fabricated to be used in high frequency scanning electrical force microscopy (HFSEFM). Additionally it is demonstrated that an in a tip of a cantilever probe integrated Schottky diode is useful for thermal surface imaging with highest temperature resolution in scanning thermal microscopy (SThM). The batch fabrication processes of both probes will be briefly introduced. Fabricated probes are characterized and first results obtained with these novel probes are presented.

Quasi-monolithic integration technology (QMIT) is a new alternative to monolithic circuit fabrication for microwave and millimeter wave integrated circuits. Static thermal analysis of the standard QMIT structure has already been performed and the effects of different factors and parameters such as epoxy thermal conductivity, distance between active device and Si substrate (W), front side substrate metallization and heat spreader on the back side have been described (Joodaki et al, 2000). In the first structure (or standard structure) of QMIT, the holes in which the active devices are placed have been created by using conventional wet etching of silicon in KOH. It is well known that by using dry etching, the hole dimensions on the front side of the Si-wafer are more uniform, accurate and reproducible. There are two other possible structures, by using full dry etching, and through a combination of wet etching and dry etching. In this paper, a 2D finite element (FE) static heat transfer simulation has been used to find the best structure among these three structures and optimise its geometry and all its physical properties for lower thermal resistance, which makes it possible to use QMIT for high power microwave circuit applications. The results show that a combination of dry etching and wet etching gives a lower thermal resistance than the other two and with backside plating of 275 /spl mu/m gold as a heat spreader, epoxy thermal conductivity of 4 W/m.K and W of 5 /spl mu/m, a thermal resistance of less than 10/spl deg/C/W is possible.

It is well known that thermal stress not only effects the reliability and life time of the packaging but also the device characteristics, which is crucial in microwave and millimeter wave design. A three dimensional finite element (3DFE) thermal stress simulator, scanning probe microscopy (SPM) measurements and nanometer surface profiler (DEKTAK) accompanied with a Peltier element (PE) have been used to determine the thermal stress distribution in the standard structure of QMIT. In this method by measuring and mapping the surface profile of Si-wafer around the embedded devices using SPM and DEKTAK the induced thermal stress is determined. Effects of different parameters such as baking temperature, power dissipation of the embedded GaAs-FET, geometry and elastic properties of thermal conductive epoxy have been described in detail. In all simulations a new model of QMIT with a minimum-number of nodes has been introduced. Remarkable agreement between calculated and measured displacements created by thermal stress was found.

In this paper, application of scanning probe microscopy (SPM) and nanometer surface profiler of DEKTAK for determination of thermal stress in standard structure of QMIT is described. A three dimension finite element (3DFE) thermal stress simulator, a scanning probe microscopy measurements and nanometer surface profiler accompanied with a Peltier element (PE) have been used to determine the thermal stress distribution in the standard structure of QMIT. In this method by measuring and mapping the surface profile of Si-wafer around the embedded devices using SPM and DEKTAK the induced thermal stress is determined. Effects of different parameters such as baking temperature, power dissipation of the embedded GaAs-FET, geometry and elastic properties of thermal conductive epoxy have been described in details. Remarkable agreement between calculated and measured displacements created by thermal stress was found.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

This work presents the detailed description of the formation process of the silicon microreactors and micromechanical structures which will dominate the near future. The description is based mainly on the author’s experience and includes a description of the dry etching of silicon by means of different halogen plasmas. The well established methods of microsystem technology allow the cheap and fast production of silicon based microtools in large numbers via batch processing.

A new silicon based, planar hybrid technology is being developed to address limitations associated with packaging and interconnections. The approach combines the advantages of both hybrid and monolithic technologies. Microwave transistor chips (e.g. GaAs FETs) are glued with an epoxy resin in openings micromachined in a high resistivity silicon substrate with a vertical precision of better than 2 ?m and lateral tolerances less than 10 ?m. Air bridge technology and thin film techniques are then used to provide the necessary interconnections. Preliminary results show very promising high frequency properties of this assembly.

This paper focuses mainly on the development of dry etching for structures of high aspect ratios, which will offer the potential to manufacture micro-sensors, micro-engines, micro-turbines, micro-actuators, and electronic circuits onto a single IC silicon chip. This technology is based on the highly anisotropic and selective dry etching of Simonocrystals. The suitability of reactive ion etching for the fabrication of micro electro mechanical systems (MEMS) has been evaluated by characterising the change of lateral dimensions vs. depth in etching deep structures in silicon. Fluorine, chlorine -and bromine-containing gases have provided the basis for this investigation. A conventional planar RIE (Reactive Ion Etching) reactor has been used, in some cases with magnetic field enhancement or with the ICP (Inductive Coupled Plasma) Source and low substrate temperatures. For reactive ion etching based on Cl2 or Cl2/HBr plasma, a slightly “positive” (top wider than bottom) slope is achieved when structures are etched with a depth of several 10 pm, whereas a “negative” slope is obtained when etching with an SF6/CCl2F2 based plasma. Pattern transfer with vertical walls is obtained for reactive ion etching based on SF6 (with O2 added) when maintaining the substrate at Iow temperature (in range ≈-100–). Further optimization of plasma chemistries and reactive ion etching procedures should result in runout depths of the order of 0.1 µm/100 gm in Si as well as in organic materials. Etching processes are demonstrated in the realisation in Si microturbine. Axles or stators (nonmoving parts) are etched into the original Si-wafer. The movable parts (rotors, beams, etc.) are prepared from electrochemically etched Si-membranes with defined thicknesses. Then all movable parts are created lithographically on the SiNxOy surface. This is followed by dry etching the mono-crystalline Si-membrane down to the SiNxOy sacrificial layer on the back side of the membrane by an RIE-process. The wafer with the movable parts is flipped onto the wafer with the already etched axle and then positioned and centred. The SiNxOy sacrificial layer is then dissolved by a chemical wet or vapour etch process. Subsequent bonding with a Pyrex glass wafer seals the parts. The topic of lithography (masked ion beam lithography, MIBL), which delivers high resolution and large focus depths as well as e-beam lithography with tunnel-tips, is also addressed in this paper.

Accurate characterization and modeling of microwave active devices is a prerequisite for reliable microwave circuit design. A new silicon micro-test-fixture which offers the possibility of (re-)using accurately characterized microwave GaAs FETs in final circuits is presented. In this way, device tolerances are eliminated resulting in accurately predictable microwave performances. The technological requirements that must be fulfilled to facilitate the re-usability of commercially available GaAs FET transistor chips and the required processing procedure are discussed. For device characterization purposes, microtest-fixtures are micromachined on a high resistivity silicon (MRS) wafer which is also suitable as a microwave substrate. After characterization and modeling of the microwave device, the required passive circuitry for the intended application can be realized on the same wafer incorporating the pre-tested device and using distributed coplanar components. The proposed technology minimizes the required lengths of bond wire interconnects between the chip and the passive circuit and offers the possibility of realizing planar interconnects using air-bridge technology.

This report presents a novel method for the production of force transducers for scanning microscopy using piezoelectric polymers as sensitive materials.

Static thermal analyses for the earlier concept and the enhanced quasi-monolithic integration technology (QMIT) are performed in detail. The effects of several parameters such as the properties of the materials involved and different geometries in all possible structures are described. Simulation results confirm a very low thermal resistance for the enhanced QMIT structure and highlight its superiority to the earlier concept of QMIT structures. This leads to a longer lifetime, a higher reliability and a better performance of the packaging.

Stencil masks are key to charged particle projection lithography, in particular for ion projection lithography. To fulfill pattern printing requirements in the sub-70 nm regime, excellent thickness uniformity and thermal emissivity control are critical parameters for high quality stencil mask fabrication. We propose and demonstrate a technique based on infrared variable angle spectroscopic ellipsometry (IR-VASE) to measure these parameters with adequate accuracy and precision. The refractive index of the Si membrane was evaluated using a Sellmeier dispersion model combined with a Drude model. Because of its spectral range from 2 to 33 μm, the IR-VASE method is sensitive to the thickness of layers as well as to the concentration and profile of Si membrane doping.

Scanning force microscopy (SFM), operated in the attractive imaging mode, enables the precise measurement of the force between tip and sample over a tip–sample distance ranging from contact to tens of nanometers. The basic long range interactions (>1 nm: i.e., hydrodynamic, electrostatic, van der Waals, and capillary forces) between tip and sample have been measured and will be discussed. Each force leads to a different mode of operation in profiling samples. The most critical part of the SFM is the force sensor. Exact knowledge of the sensor properties is required for the interpretation of SFM measurements. We have used micromachined silicon sensors consisting of a monolithic silicon cantilever with integrated silicon tip and have performed a detailed characterization of the tip geometry and resonance properties. Examples of surface images on different samples (conductors, insulators and biological materials) and structures, ranging from atomic steps up to several microns high features, have been investi...

The advantages of a DLTS method—the DLTFS method—are presented. In this technique the capacitance-time transients are digitalized, and the discrete Fourier coefficients are formed via numerical Fourier transformation. These coefficients can be used to calculate amplitude and time constant of the transients for discrete trap levels in various ways, thus giving control of the results. This permits automatic control of measuring parameters (e.g. choice of period width and temperature values), automatic evaluation during measurement (e.g. impurity concentration, activation energy and capture cross section), and high measuring accuracy. In contrast to the usual DLTS technique a temperature dependence of the amplitude, leading to errors especially in CC-DLTS and current-DLTS measurements, does not present a source of error. The good noise suppression is a further advantage of the DLTFS method.

The interface properties Of anodically oxidized GaAs MIS capacitors have been investigated by means of a computer controlled measuring set-up. DLTS, C(t) and C(U) measurements have been performed, The measurement of CLF anil CHF at the same bond-bending allows a reliable determination of the interface state density. The distribution of interface states shows a minimum which can occur at different energies in the band gap. Additionally, from CHF (U) the interface charge has been calculated which allowed a distinction between donor and acceptor typo interface states. The results of DLTS and (C(t) measurements are influenced by the width of the filling pulses. This effect is interpreted an n carrier drift into the insulating layer.

Dealing with carrier injection into semiconductors one has to distinguish betweeen that into a region with a locally fixed space charge (e.g. minority carrier injection into the pnp punch through diode, or majority carrier injection into a diode with deep levels) and that into a region without a locally fixed space charge (e.g. majority carrier injection into the nvn or pπp diode). In both cases various boundary conditions can be realized (cf. space charge, barrier or emission limited currents). For all these cases a general formula for the frequency dependence of the small-signal admittance will be given. Sensitive microwave techniques are presented to study the transit time effects occurring in the high frequency region of the small-signal admittance. Experimental results for majority carrier injection into high resistivity uncompensated silicon are given with θD-product of transit time and dielectric relaxation frequency as a parameter. Good agreement between theoretical and experimental results is achieved. Bei der Ladungstragerinjektion in Halbleitern hat man zwischen derjenigen in ein Gebiet mit ortsfester Raumladung (z. B. Minoritatstragerinjektion bei der pnp Baritt-Diode oder auch bei der Majoritatstragerinjektion in Dioden mit Traps) und derjenigen in ein Gebiet ohne ortsfeste Raumladung (z. B. Majoritatstragerinjektion in der nvn oder pπp Diode) zu unterscheiden. In beiden Fallen konnen die verschiedensten Randbedingungen (z. B. Raumladungs-, Barrieren- und Emissionsbegrenzung) realisiert sein. Es wird fur alle diese Falle eine allgemeine Formel fur den Frequenzgang der Kleinsignaladmittanz angegeben. Es werden Mikrowellenmesverfahren vorgestellt, die es gestatten, die im Hochfrequenzgebiet auftretenden Laufzeiteffekte nachzuweisen. Der Frequenzgang der Kleinsignaladmittanz wird mit dem Produkt θD aus Laufzeit und dielektrischer Relaxationsfrequenz als Parameter an hochohmigen unkompensiertem Silizium fur die Majoritatstragerinjektion gemessen und vollstandige Ubereinstimmung zwischen Theorie und Experiment gefunden.

The main problems occurring during the trench etching in a chlorine containing RIE process are considered: (1) deposition of contaminating films on the trench sidewalls, (2) micro masking effects of those contaminations leading to the so called “black silicom”, and (3) “trenching effects” on the bottom of the trench cell. By means of SIMS and Auger measurements it is shown that the contaminating films on the trench walls are formed by unsaturated B x Cl y species from the BCl 3 plasma. By the same analytical methods it is obtained that the so called black silicon occurring in a pure Cl 2 plasma is caused by micro masking by Al-, Si- oxide clusters which stem from surface adsorbed oxygen and the alumina covered cathode. Furthermore it is observed that the trenching effect occurring with Cl 2 plasma can be significantly reduced by adding BCl 3 . BCl 3 reduces the number of Cl + 2 ions and therefore favours the formation of passivating species on the surface to be etched. This passivating layer in return reduces the trench formation at the bottom.

The value of the capture rate cn and the capture cross section σn of the gold acceptor level is determined from single injection SCLC measurements at high resistivity Au-compensated n+–i–n+-Si samples. By means of a single and double pulse method the time dependence of the current is measured for the capture and reemission of electrons by the Au-acceptor level. The capture and emission time constant τ and τe were calculated according to the SRH model. From the temperature dependence of τe the activation energy Ec–EAu was determined. The obtained value of cn agrees quite well with that given by Bemski whereas the value given by Fairfield and Gokhale cannot be confirmed. The value of cn calculated from the emission rate e given by Sah is too large by a factor of about four. An hochohmigen goldkompensierten n+–i–n+-Siliziumproben wurden der Einfangs-koeffizient cn und der Wirkungsquerschnitt σn des Goldakzeptorniveaus bestimmt. Mit Hilfe einer Einfach- und einer Doppelimpulsmesmethode wurde der Strom-Zeitverlauf fur den Einfang und die Reemission von Elektronen durch das Akzeptorniveau gemessen. Ausgehend vom Modell von Shockley, Read und Hall wurde der Strom-Zeitverlauf berechnet und aus dem Vergleich mit dem Experiment die Einfang- und Emissionszeit-konstante bestimmt. Aus der Temperaturabhangigkeit der Emissionszeitkonstanten wurde die Aktivierungsenergie Ec–EAu bestimmt. Der ermittelte Wert fur cn stimmt recht gut mit dem von Bemski angegebenen uberein, last sich jedoch nicht mit dem von Fairfield und Gokhale bestimmten in Einklang bringen. Aus dem von Sah angegebenen Wert fur e ergibt sich ein um den Faktor vier groserer Wert fur cn.

The temporal and spatial propagation of heat in a dielectric medium has been studied by observing the thermal expansion using a differential laser interferometer which was initially built for profilometry. It is demonstrated that topographical and thermal information can be obtained simultaneously. Measurements were compared with calculations using a simple model and found to be in good agreement.

It is shown, that only taking into account the time dependence of the local electrical field ℰ(t) yields a complete understanding of the transient behaviour of sclc-diodes with deep levels. Due to this time dependence of ℰ(t) a rearrangement of the space charge distribution at t = 0 to t ∞ takes place effecting that at t ∞ nearly the whole space charge is located within 1/10 of the sample length and that the electric field is equal to U/L in nearly 90% of the sample. The time for the current reaching its steady state value after applying a voltage step is therefore mainly determined by the emission time constant and not by the capture time constant as usually supposed. Es wird gezeigt, das ein vollstandiges Verstandnis der transienten Eigenschaften von sclc-Dioden mit einem tiefen Storniveau nur dann erreicht wird, wenn die Zeitabhangigkeit der lokalen elektrischen Feldstarke mit berucksichtigt wird. Aufgrund dieser Zeitabhangigkeit der elektrischen Feldstarke tritt eine Umverteilung der Raumladung beim Ubergang von t = 0 zu t ∞ ein. Diese Umverteilung bewirkt, das bei t ∞ nahezu die gesamte Raumladung auf einen Bereich von etwa 1/10 der Probenlange konzentriert ist und das das elektrische Feld in nahezu 90% der Probe gleich U/L ist. Daher wird die Zeit, die vergeht, bis der Strom nach Anlegen eines Spannungssprungs seinen stationaren Wert erreicht hat, hauptsachlich von der Emissionszeitkonstante und nicht allein, wie gewohnlich angenommen wird, von der Einfangzeitkonstante bestimmt.

An improved model of the nonequilibrium behaviour of MIS varactors is presented taking into account the charge exchange of interface states with both bands. C–V curves were calculated for donor and acceptor type interface states of typical distribution in energy. By means of the proposed model the bulk minority carrier generation time constant can be measured and related with semiconductor bulk properties. This allows one to distinguish between interface states acting with the conduction band and those interacting with the valence band. A possible experimental proof of the presented model as well as its limitations are discussed in detail.

Theoretical and experimental investigations on the small signal behavior of sclc-diodes containing deep levels were performed. The experimental results were obtained from high resistivity Au-compensated n + in + -silicon samples. The measurements of the frequency dependent conductance and capacitance are consistent with theory up to frequencies ω T >1. From the bias dependence of the capacitance a method is deduced to determine the capture time constant easily and with high accuracy and, if the trap concentration is already known, the capture cross section. The value obtained for the gold acceptor level agrees well with that determined by means of transient current measurements.

DLTS measurements on the gold donoe and acceptor level in p-type silicon and reported. From the experimental data it must be concluded that the gold donor and the acceptor level are caused by the same defect, that the acceptor level lying 0.546eV below the conduction band is temperature independently pinned to the conduction band and that the hole capture cross section of the acceptor level P A is temperature independent in the measured range of 215 to 345 K.

The diffusion of B and As from polycrystalline Si into single‐crystal Si during rapid optical annealing (ROA) has been investigated. Samples were characterized by secondary ion mass spectrometry, transmission electron microscopy, and sheet resistance measurements. It is demonstrated that very shallow diffusion profiles in the single‐crystal Si can be formed by ROA. At 1050 °C/5 s, for instance, a junction depth of ∼35 nm is obtained for As diffusion. The effect of polycrystalline Si/mono‐Si interface treatment on the dopant diffusion and the polycrystalline Si grain structure will be discussed.

At high resistivity gold compensated n+−i−n+-silicon samples the values of c and c/cn were determined. These values were obtained from a current controlled negative resistance (CCNR) occuring at the steady state I–U characteristic without using the unknown magnitude of the spin degeneracy factor g and the values of p1 and n1. The CCNR is caused by double injection filaments arising in space charge limited current (sclc) diodes. The origin of these filaments is given. The formation of these current filaments takes a certain delay time TD, which allows by means of pulse measurements to separate the single and double injection behavior. The corresponding conditions are given. The comparison of the values of cn (determined from the single injection behaviour), c, and c/cn with those in the literature shows that the main difference results from different values of the activation energies and of g. The value of cn = 9.8 × 10−9 cm3 s−1 and c/cn = 2.6 agrees well with that given by Bemski, Zimmermann, and Braun and Grimmeiss, whereas the values given by Sah et al, and by Fairfield and Gokhale could not be confirmed. An hochohmigen goldkompensierten n+−i−n+-Siliziumproben wurden die Werte von c sowie c/cn bestimmt. Diese Werte wurden mit Hilfe eines in der stationaren I–U-Kurve auftretenden stromkontrollierten negativen differentiellen Widerstandes (CCNR) bestimmt. Dabei werden der unbekannte Wert fur den Spinentartungsfaktor g und auch die noch in der Diskussion befindlichen Werte fur n1 and p1 nicht benutzt. Der CCNR ruhrt von Doppel-injektions-Stromfilamenten her. Die Ursache fur das Auftreten dieser Filamente wird diskutiert. Da die Ausbildung dieser Filamente eine bestimmte Zeit TD benotigt, ist es moglich, Einfachinjektionsverhalten und Doppelinjektionsverhalten voneinander zu trennen. Die zugehorigen Bedingungen werden angegeben. Der Vergleich der Werte von cn, sowie c und c/cn mit Literaturwerten zeigt, das die hauptsachlichen Unterschiede durch die verschiedenen Werte fur die entsprechenden Aktivierungsenergien und von g herruhren. Der Wert von cn = 9,8 × 10−9 cm3 s−1 sowie der Quotient c/cn = 2,6 stimmen gut mit den von Bemski, Zimmermann, sowie von Braun und Grimmeiss angegebenen uberein. Die Werte von Sah et al. sowie von Fairfield und Gokhale hingegen konnen nicht bestatigt werden.

Within the high-frequency and microwave range the small-signal admittance of semiconductor diodes is determined by transit time effects, i.e. conductance and capacitance exhibit periodical variations with frequency. From measurements of maxima and minima the transit time is obtained. In case of ohmic contacts majority carrier injection occurs and space charge limited currents (SCLC) are observed. From experimental values of the transit time the majority carrier mobility is derived. In case of Schottky contacts on the same material minority carriers are injected under punchthrough conditions (MSM-BARITT-diode). Then from experimental values of the transit time the minority carrier mobility is determined. Finally bias variation yields the velocity-field characteristics of both minority and majority carrier mobilities of the same material. For 12 kΩ cm n-type silicon low-field values μP = 390 cm2 V−1 s−1 and μn = 1360 cm2 V−1 s−1 are obtained. Im Hochfrequenz- und Mikrowellenbereich wird die Kleinsignal-Admittanz von Halbleiter-Dioden durch Laufzeiteffekte bestimmt, der Leitwert und die Kapazitat zeigen periodische Schwankungen in Abhangigkeit von der Frequenz. Daher kann aus Messungen der Maxima und Minima die Laufzeit experimentell bestimmt werden. Im Fall ohmscher Kontakte findet Majori-tatstrager-Injektion statt, und raumladungsbegrenzte Strome werden beobachtet. Aus den expe-rimentellen Werten fur die Laufzeit wird die Majoritatstrager-Beweglichkeit bestimmt. Im Fall von Schottky-Kontakten auf demselben Material werden unter „punchthrough”-Bedingungen Minoritatstrager injiziert. Dann wird aus der Laufzeit die Minoritatstrager-Beweglichkeit berechnet. Daruber hinaus liefert die Anderung der Diodenvorspannung die Feldstarkeabhangigkeit der Beweglichkeit von Minoritatstrager und Majoritatstrager. Fur kleine Feldstarken werden fur 12 kΩ cm-n-Silizium folgende Werte erhalten:μP = 390 cm2V−1 s−1, μn = 1360 cm2 V−1 s−1.

The parameters of the gold donor level inp-type silicon are determined from the temperature dependence of the free carrier concentration and from DLTS measurements. The entropy-factorX T is determined to be 20±2. In addition, the capture cross-section for holes σ p =5.5×10−15 cm2 and the reaction enthalpyH T −H v =0.35eV for the exchange of holes between the gold donor level and the valence band are obtained in the present investigation.

The temperature independence of the capture cross-section of the neutral Au-acceptor level for electrons in silicon, σn, in the range of 172 to 316 K is found. The measurements were performed at high-resistivity, Au-compensated single-injection SCLC diodes by means of a pulse and a small-signal capacitance method. In der vorliegenden Arbeit wird die Temperaturunabhangigkeit des Wirkungsquerschnitts σn des neutralen Au-Akzeptorniveaus fur Elektronen in Silizium im Temperaturbereich 172 bis 316 K nachgewiesen. Die Messungen wurden an hochohmigen Au-kompensierten Einfachinjektions-SCLC-Dioden mit Hilfe einer Puls- und einer Kleinsignal-Kapazitatsmethode durchgefuhrt.

The I–U characteristics of p +in + diodes containing deep levels show a negative differential resistance (n.d.r.) region. At such diodes relaxation oscillations (r.o.) occur, which are discussed for the first time in the present paper. The r.o. are a very general phenomenon. The reasons are given, why a point by point measurement right into the n.d.r. region of the I–U characteristic is sometimes possible and sometimes not due to the occurrence of r.o. The attainable amplitudes of the r.o. are very high, thus an application in switching devices may be possible. The switching time is in the order of magnitude of the carrier lifetime. A theoretical explanation of the processes taking place inside the diodes cannot yet be given. But it will be shown, that, contrary to the usual assumption, even in “long” pin-diodes 1. the recombination processes mainly take place in regions close to the contacts and not in the “i” region and that therefore 2. the diffusion cannot be neglected. Die I–U-Kennlinien von p +in +-Dioden weisen negative differentielle Widerstands-(n.d.W.)-bereiche auf. An solchen Dioden werden unter bestimmten Bedingungen Kippschwingungen (K.S.) beobachtet, uber die in der vorliegenden Arbeit zum ersten Male berichtet wird. Es werden die Grunde dafur angegeben, das manchmal eine punktweise Messung der I–U-Kennlinien in den n.d.W.-Bereich hinein moglich ist und manchmal nicht, da die K.S. auftreten. Die erreichbaren Amplituden der K.S. sind so gros, das an eine Verwendung zu Schaltzwecken gedacht werden kann. Die Schaltzeiten liegen in der Grose der Lebensdauer der Ladungstrager. Ein theoretisches Verstandnis der Vorgange im Probeninneren konnte bisher noch nicht erreicht werden. Es wird jedoch gezeigt, das nicht, wie bisher allgemein angenommen, die Rekombination hauptsachlich in der „i” Zone stattfindet, sondern das auch in „langen” pin-Dioden 1. die Rekombination ausschlieslich in Kontaktnahe stattfindet und das daher auch 2. die Diffusion nicht vernachlassigt werden darf.

Constant‐capacitance deep‐level transient spectroscopy measurements performed on InP‐SiO2 metal‐insulator‐semiconductor capacitors are reported for the first time. Two types of samples have been used, one of epitaxial InP with a free‐electron concentration n=1.4×1015 cm−3 and covered with an ‘‘undoped’’ SiO2 insulating layer, the other of bulk material with n=1016 cm−3 and covered with an HCl‐‘‘doped’’ SiO2 dielectric. Extensive experiments have been performed and a model has been proposed which successfully explains the corresponding results. This model is based on the assumption of a spatial and energetical distribution of interface states within the dielectric. The interaction of these traps with the conduction band takes place via a tunneling process during the capture of electrons and by a tunneling followed by a thermally activated transition during the emission process. The interface state density has been found to be about 1012 cm−2 eV−1 in the energy range between about 0.2 and 0.5 eV below the c...