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Sleeping is essential for student physical as well as mental health. Sleep disturbance is distressing state that affect quality of work. Objective: To determine the sleep disturbance in DPT students. Methods: This observational study recruited 884 participants out of which 800 filled the questionnaire with mean age 21.54 ±1.76 from different medical universities and medical colleges of Punjab. Non probability convenient sampling technique was used. Both male and female students of all the years of DPT were included. Students with psychiatric illness, chronic medical illness, smoking and taking drugs excluded from the study. The effects of insomnia were checked by Athens Insomnia Scale (AIS) questionnaire. For data analysis SPSS version 26 was used. Results: Mean age of the physical therapy students was 21.54 ±1.76. Out of 800, 61.75% students were insomniac. Most of the students had unsatisfactory sleep quality (55.87%), awakening at the night time (62%), and day time sleepiness (76.25%). Conclusion: According to present study prevalence of sleep disturbance was very high among physical therapy students

In this paper, the global complexities of a stochastic virus transmission framework featuring adaptive response and Holling type II estimation are examined via the non-local fractal-fractional derivative operator in the Atangana-Baleanu perspective. Furthermore, we determine the existence-uniqueness of positivity of the appropriate solutions. Ergodicity and stationary distribution of non-negative solutions are carried out. Besides that, the infection progresses in the sense of randomization as a consequence of the response fluctuating within the predictive case's equilibria. Additionally, the extinction criteria have been established. To understand the reliability of the findings, simulation studies utilizing the fractal-fractional dynamics of the synthesized trajectory under the Atangana-Baleanu-Caputo derivative incorporating fractional-order $ \alpha $ and fractal-dimension $ \wp $ have also been addressed. The strength of white noise is significant in the treatment of viral pathogens. The persistence of a stationary distribution can be maintained by white noise of sufficient concentration, whereas the eradication of the infection is aided by white noise of high concentration.

The structural and electronic properties of h-BN sheet implanted with X atoms (X = lithium (Li), beryllium (Be), aluminum (Al), carbon (C), and silicon (Si)) have been investigated to tune its band gap to amend its insulating behavior toward semiconducting material employing density functional theory (DFT). It has been observed that on replacing nitrogen or boron (N/B) atom with impurity atom, several impurity levels appear in band gap dividing big gap into small energy gaps, albeit to a different extent, depending upon the dopant element and substitutional site. The lowest value of band gap falls as low as 2.27 eV as compared to 4.63 eV of pristine h-BN in addition to the appearance of states at the Fermi level. Additionally; geometrical, interaction of foreign elements with the host material, and stability issues are discussed. These results are affable for its usage in transistor-based devices and to explore its new applications in high-power electronic and optoelectronic devices.

The structural and electronic properties of h-BN sheet implanted with X atoms (X = lithium (Li), beryllium (Be), aluminum (Al), carbon (C), and silicon (Si)) have been investigated to tune its band gap to amend its insulating behavior toward semiconducting material employing density functional theory (DFT). It has been observed that on replacing nitrogen or boron (N/B) atom with impurity atom, several impurity levels appear in band gap dividing big gap into small energy gaps, albeit to a different extent, depending upon the dopant element and substitutional site. The lowest value of band gap falls as low as 2.27 eV as compared to 4.63 eV of pristine h-BN in addition to the appearance of states at the Fermi level. Additionally; geometrical, interaction of foreign elements with the host material, and stability issues are discussed. These results are affable for its usage in transistor-based devices and to explore its new applications in high-power electronic and optoelectronic devices.

We investigated the geometrical and electronic properties of copper-doped MoS2 by first principles calculations. The doping is done by Cu substitution with Mo (1 to 4 atoms) accompanied by study of S vacancies. Our outcomes show that the concentration of doping and vacancy of S leads to determine and finely tune the band gap in the range of 0.16 to 1.95 eV. This fine tuning of band gap results due to variation in concentration of impurity, changing dopant site, and production of S vacancies. The resulting arrangements show significant charge redistribution on replacement of local atoms with foreign atoms dictated by electronegativity determined from the Bader analysis. In addition, bonding mechanism occurring due to substitution of foreign elements is discussed. These results give pleasing data regarding fine desired value of the band gap of the MoS2 which helps its utilization in semiconductor and other opto-electronic devices in addition to understanding the electrical conductivity.

Hexagonal boron nitride (h-BN), with insulating band gap (> 6 eV) 2D material, has attracted extensive attentions. To discover potential applications in optoelectronic devices, modulation in electrical conductivity (n or p type) plays a significant role. In this paper, the structural and electronic properties of energetically stable doped boron nitride monolayer via ab initio calculations have been reported. Our basic focus is on fine tuning of the band gap with replacement of a number of elements by varying the dopant site. Our results show the opportunity to induce a reduced band gap values with smaller concentration of dopants, and also show many interesting physical properties with better structural stabilities, in X-doped BN sheet (X = P, S, O, F, Cl).

We investigated the geometrical and electronic properties of copper-doped MoS

Based on first-principles density functional theory (DFT) calculations using VASP, we investigate the effect of beryllium (Be) doping on band gap of hexagonal boron nitride sheet. The systems were investigated by changing the concentration of dopants from 3.125% to 12.5%. Additionally, rectangular and hexagonal configurations for doping at nitrogen (N) sites were examined to ascertain doping site importance. We inspected that the concentration of impurity atoms is as important as the substitutional site to tune the band-gap to some desired level. In our system, a maximum of 4Be atoms as impurity can be accommodated. The impurity atoms being electron deficient cause Fermi level to shift downward. A minimum band gap can be achieved on maximum allowable impurity concentration. Appearance of impurity lines caused by doping at Fermi energy, show the changed behaviour of the system from insulator to semi-conductor/conductor. Our results help to offer the opportunity to modify the band-gap of h-BN sufficiently for its employment in diverse electronic devices.

First principles DFT calculations have been performed to investigate the geometrical and electronic properties, and charge transfer mechanism of different impurities doped/adsorbed in graphene. The results indicate that Be and Mg doping significantly alter the structural and electronic properties of graphene. Studying different configurations of doping/adsorption of Mg, Be and Br we computed a variety of band-gap values, maximum being 0.48 eV. Badar charge analysis indicates that the substitution of impurities leads to valance charge transmission based upon the electronegativity of the atoms. The different band-gap values obtained in our investigations seem sufficient for use of graphene in optoelectronic and such devices where graphene is disable for its use to switch on/off devices.

Graphene, being a gapless semiconductor, cannot be used in pristine form for optoelectronic applications such as solar cells. Therefore, it is necessary to tune a band-gap in pristine graphene. Density functional theory calculations have been performed to investigate the structural, electronic, and charge transfer mechanism of different impurities doped/adsorbed in graphene sheet. The results indicate that Al and Be doping can significantly modify the structural and electronic properties of graphene. Replacement of single C atom with Al atom induces a band-gap of 0.40 eV. Adopting different arrangements of Al, Be and Br employing doping and adsorption techniques we computed a variety of band-gap values, maximum value being 0.82 eV. Badar charge analysis indicates that the valence charge transmission takes place from less electronegative atoms towards atoms having higher electronegativity. The adsorption/doping of impurity atoms induce band-gap values in a significant wide range, which seems sufficient for its use in optoelectronic devices. Our results offer the opportunity to tune the electronic band structure of graphene for desired applications.