196 results on '"Quillec, M."'
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2. The InGaAlAs System for Strained and Unstrained Heterostructures on InP Substrate
3. Controlled steam oxidation of AlInAs for microelectronics and optoelectronics applications
4. Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys.
5. The proteoglycan skeleton of the Kurloff body as evidenced by Cuprolinic Blue staining
6. Wet thermal oxidation of AlAsSb alloys lattice matched to lnP
7. Kurloff cell ultrastructure after combined formaldehyde-cetylpyridinium chloride fixation and high-iron diamine staining
8. Kinematic versus dynamic approaches of x-ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells
9. Theoretical comparison of GaInAs/GaAlInAs and GaInAs/GaInAsP quantum well lasers
10. Collagen-associated sulphated proteoglycans. Ultrastructure after formaldehyde-cetylpyridinium chloride fixation
11. Making Semiconductor Materials for Optoelectronics
12. The InGaAlAs System for Strained and Unstrained Heterostructures on InP Substrate
13. Oxide confining layer on an InP substrate
14. Structural Characterization of Superlattices by X-Ray Diffraction
15. Direct Measurement of Impurity and Damage Distribution in Ion Implanted ZnTe by Cathodo and Photoluminescence
16. Growth and characterization of InxGa1-xAs/InyGa1-yAs strained-layer superlattice on InP substrate.
17. Wet thermal oxidation of AlAsSb alloys lattice matched to InP.
18. Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy.
19. Growth conditions and characterization of InGaAs/GaAs strained layers superlattices.
20. Simulation of the boron build-up formation during melting laser thermal annealing
21. Large boron-interstitial cluster modelling in BF3 plasma implanted silicon
22. Defect evolution and dopant activation in laser annealed Si and Ge
23. Electrical characterization of high purity InGaAsP alloys
24. Auto lattice matching effect for allnas grown by MBE at high substrate temperature
25. The Kurloff cell: Its differentiation in the blood and lymphatic system
26. Scanning electron microscopy of pure Kurloff cell suspensions: Observation of an extrusion process
27. Extended defects in ion-implanted si during nanosecond laser annealing
28. Large boron-interstitial cluster modelling in BF3 plasma implanted silicon
29. Simulation of the boron build-up formation during melting laser thermal annealing
30. Melt depth and time variations during pulsed laser thermal annealing with one and more pulses
31. Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach
32. Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-amorphised silicon
33. BF[sub 3] PIII modeling: Implantation, amorphisation and diffusion
34. BF3 PIII modeling: Implantation, amorphisation and diffusion.
35. Large boron-interstitial cluster modelling in BF3 plasma implanted silicon.
36. MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
37. +55°C pulse lasing at 1.56 [micro sign]m of all-monolithic InGaAlAs/InP vertical cavity lasers
38. Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
39. Low threshold InGaAlAs monolithic vertical cavity bistable device at 1.5 μm wavelength
40. Monolithic vertical cavity device lasing at 1.55 [micro sign]m in InGaAlAs system
41. Superlattice effects induced by atomic ordering onGaxIn1−xP Raman modes
42. Puits quantiques et superréseaux à base de III-V pour l'optoélectronique: fabrication et usages
43. Very low chirping of InGaAs-InGaAlAs MQW DFB BRS lasers under 10 Gbit/s modulation
44. Cryogenic investigation of gate leakage and RF performances down to 50 K of 0.2 μm AlInAs/GaInAs/InP HEMTs
45. High speed ultralow chirp 1.55 μm MBE grown GaInAs/AlGaInAs MQW DFB lasers
46. Interest in AlGaInAs on InP for optoelectronic applications
47. Effect of channel strain on the electrical characteristics of InGaAs/InAlAs HEMTs.
48. A Study Of Charge Control In n- And p-type Lattice Matched And Strained Channel MODFETs With GaAs And InP Substrates.
49. On the origin of the semi-insulating behaviour of low-temperature In/sub 0.52/Al/sub 0.48/As grown by molecular beam epitaxy.
50. Anomalous optical behaviour of LT-AlInAs related to anisotropic composition modulation.
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