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The electrochemical capacitance voltage technique has been used on highly boron doped SiGe and Si layers. Although the boron concentration is constant over the space charge depth, the 1/C2 versus voltage curves are not linear. They indeed present a negative curvature. This can be explained by the existence of deep acceptors which ionise under a high electric field (large inverse voltage) and not at a low inverse voltage. The measured doping concentration in the electrochemical capacitance voltage increases strongly as the inverse voltage increases. Thanks to a comparison with the boron concentration measured by secondary ions mass spectrometry, we show that the relevant doping concentrations in device layers are obtained for small inverse voltage in agreement with the existence of deep acceptors. At the large inverse voltage, the measured doping can be more than twice larger than the boron concentration measured with a secondary ion mass spectroscopy. [ABSTRACT FROM AUTHOR]

Research was conducted to examine the wet thermal oxidation of a strained balanced superlattice structure that was epitaxially developed on InP and includes high Al content layers. The oxidation kinetics were considered as a function of oxidation duration and temperature. Results indicate the usefulness of the structure as a confining layer for monolithic long wavelength vertical cavity surface emitting layers.

Presents a study which considered the growth and characterization of indium[sub x]gallium[sub 1-x]arsenide/indium[sub y]gallium[sub 1-y] strained-layer superlattice on indium phosphide substrate. Discussion of the growth; X-ray characterization; Optical characterization.

Wet thermal oxidation of AlAsSb was investigated. The oxidation kinetics was studied as a function of temperature and oxidation duration. An expression to allow accurate determination of the oxide depth for any temperature and time was established. Secondary ion mass spectrometry profiles and x-ray diffraction were used to demonstrate that an interfacial layer, composed of pure Sb and As and textured on InP, is formed during the oxidation process. [ABSTRACT FROM AUTHOR]

Investigates the growth and characterization of aluminum compound lattice matched in indium phosphide grown by molecular-beam epitaxy. Crystalline quality of the compound; Methodology of the study; Discussion on the result of the study.

BF3 plasma immersion ion implantation (PIII) is a promising technique in the race for highly boron doped P+/N ultra-shallow junctions (USJs) in complementary metal oxide semiconductor (CMOS) silicon technologies. Implantation conditions used in BF3 PIII lead to high super-saturations (≥1 × 1020 cm-3) of both boron and silicon interstitial atoms in the implantation region. In such conditions, very large loop-shaped boroninterstitial clusters (BICs) are formed during subsequent thermal anneals, as confirmed by transmission electron microscopy (TEM) measurements. In this study, amorphizing BF3 PIII implants (10 keV, 5 × 1015 cm-2) followed by different thermal anneals were carried out in order to investigate the large BICs precipitation. A 'large BICs' model based on moments approach allowed to reproduce the experimental data including boron diffusion profiles (obtained by SIMS) and boron electrical activation obtained by Hall effect sheet resistance measurements. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]