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The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects. [ABSTRACT FROM AUTHOR]

Organic–inorganic hybrid perovskite quantum wells exhibit electronic structures with properties intermediate between those of inorganic semiconductors and molecular crystals. In these systems, periodic layers of organic spacer molecules occupy the interstitial spaces between perovskite sheets, thereby confining electronic excitations to two dimensions. Here, we investigate spectroscopic line broadening mechanisms for phonons coupled to excitons in lead-iodide layered perovskites with phenyl ethyl ammonium (PEA) and azobenzene ethyl ammonium (AzoEA) spacer cations. Using a modified Elliot line shape analysis for the absorbance and photoluminescence spectra, polaron binding energies of 11.2 and 17.5 meV are calculated for (PEA)2PbI4 and (AzoEA)2PbI4, respectively. To determine whether the polaron stabilization processes influence the dephasing mechanisms of coupled phonons, five-pulse coherent Raman spectroscopies are applied to the two systems under electronically resonant conditions. The prominence of inhomogeneous line broadening mechanisms detected in (AzoEA)2PbI4 suggests that thermal fluctuations involving the deformable organic phase broaden the distributions of phonon frequencies within the quantum wells. In addition, our data indicate that polaron stabilization primarily involves photoinduced reorganization of the organic phases for both systems, whereas the impulsively excited phonons represent less than 10% of the total polaron binding energy. The signal generation mechanisms associated with our fifth-order coherent Raman experiments are explored with a perturbative model in which cumulant expansions are used to account for time-coincident vibrational dephasing and polaron stabilization processes. [ABSTRACT FROM AUTHOR]

Gallium nitride (GaN)- based lasers are extensively employed in display, lighting, and communication applications due to their visible laser emission. Despite notable advancements in their performance and reliability, sustained device functionality over extended periods remains a challenge. Among the diverse mechanisms contributing to degradation, the deterioration of quantum wells poses a persistent obstacle. In this study, we investigated the atomic-level degradation of quantum wells within GaN-based laser diodes utilizing atom probe microscopy. Our analysis revealed a substantial increase in indium fluctuation, accompanied by the formation of indium protrusions at the quantum well interfaces, which provides a credible explanation for the observed increase in FWHM (full width at half maximum) of the spontaneous spectra of lasers following prolonged operation. Additionally, magnesium analysis yielded no evidence of diffusion into the quantum well region. Combined with prior studies, we attribute the degradation of quantum wells primarily to the formation of indium-related non-radiative recombination centers. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D)/three-dimensional (3D) halide perovskite heterostructures have been extensively studied for their ability to combine the outstanding long-term stability of 2D perovskites with the superb optoelectronic properties of 3D perovskites. While current studies mostly focus on vertically stacked 2D/3D perovskite heterostructures, a theoretical understanding regarding the optoelectronic properties of 2D/3D perovskite lateral heterostructures is still lacking. Herein, we construct a series of 2D/3D perovskite lateral heterostructures to study their optoelectronic properties and interfacial charge transfer using density functional theory (DFT) calculations. We find that the band alignments of 2D/3D heterostructures can be regulated by varying the quantum-well thickness of 2D perovskites. Moreover, decreasing the 2D component ratio in 2D/3D heterostructures can be favorable to form type-I band alignment, whereas a large component ratio of 2D perovskites tends to form type-II band alignment. We can improve the amount of charge transfer at the 2D/3D perovskite interfaces and the light absorption of 2D perovskites by increasing quantum-well thickness. These present findings can provide a clear designing principle for achieving 3D/2D perovskite lateral heterostructures with tunable optoelectronic properties. [ABSTRACT FROM AUTHOR]

The static electric dipole–dipole coupling between donor–acceptor pairs (DAPs) in wide-bandgap semiconductors has recently emerged as a means of realizing a quantum science platform through optically controllable, long-range interactions between defects in the solid state. In this work, we generalize DAPs to consider arbitrary dopant populations and demonstrate that the charge of the NV center in diamond is well suited for quantum science. Explicitly, we leverage experimental results [see Z. Yuan et al., PRR 2, 033263 (2020)] to show that shallow NV centers can be efficiently initialized to a given relative population of the negative and neutral charge states and that modulating the surface termination would allow for control of the timescale over which the initialization and subsequent computations would occur. Furthermore, we argue that the observation of electroluminescence from the neutral charge state of the NV center [see N. Mizuochi et al., Nat. Photon. 6, 299 (2012)], but not from the negative charge state, implies the ability to interface with the NV center's charge in a manner analogous to the spin interface enabled by the spin-state dependent fluorescence of the NV center. [ABSTRACT FROM AUTHOR]

In this paper, mole fraction dependent strain in a III-nitride alloy and its effects on built-in polarization and quantized states in multi-quantum-wells (MQWs) have been investigated. The internal electric field arising out of spontaneous and piezoelectric polarizations in the presence of strain has been calculated. Then, the energy eigenvalues and wavefunctions of carriers in the modified potential well configurations have been computed by solving a time-independent Schrödinger equation using a finite difference method. Next, the overlap integrals between the wavefunctions of bound states in conduction and valence bands, an important consideration for optical transitions, have been computed and plotted. The results are shown taking three nitride-based MQW structures InGaN/GaN, GaN/AlGaN, and InGaN/InAlN as examples. The study helps choose suitable mole fractions for the improved and desired performance of the nitride MQW based devices. [ABSTRACT FROM AUTHOR]

Asymmetric quantum wells (AQWs) utilizing interband transitions enhance second-order susceptibility over a wide wavelength range compared to natural crystals. The nonlinear susceptibility is further enhanced in AQWs with type-II band alignment as compared to type-I band alignment, a result of the larger interband charge shift. This enhancement is demonstrated in this work by analyzing three type-I and type-II AQW designs based on the lattice-matched InP/AlGaInAs materials systems using the envelope wavefunction approximation. The calculated interband second-order susceptibility tensor elements in type-II structures range between 20 and 1.60 × 103 pm/V for nearly resonant optical rectification and difference frequency generation applications at near-infrared and terahertz wavelengths, an improvement of nearly 1 order of magnitude over the type-I structures and 1–2 orders of magnitude over natural crystals such as LiNbO3, KTiOPO4 (KTP), or GaAs. A factor of 2–3 further enhancement of the tensor elements is achieved by optimizing the well widths and band offsets of the type-II asymmetric quantum wells. The type-II structure can be implemented in other material systems spanning the longwave infrared to visible wavelengths, enhancing nonlinear susceptibility for various applications, including photonic integrated circuits. [ABSTRACT FROM AUTHOR]

In this study, we investigate the tradespace between the improvement of mid-infrared light-emitting diode efficiency through microcavity enhancement vs reduction of Auger recombination for different W-superlattice thicknesses. Several sample designs are modeled and then grown and fabricated to test the tradespace at different W-superlattice thicknesses down to the quantum well limit. In a half-cavity, with a single reflector from the top metal contact, intermediate thickness W-superlattices gave the highest efficiencies, outperforming those in the W-quantum well limit across the entire measured current range. Experimentally, we report wallplug efficiencies of 0.4% for a room temperature 3.2 μm device. W-superlattices of intermediate thickness were also found to be optimal for a full-cavity device with a bottom distributed Bragg reflector added. The resonant full cavity did strongly improve the peak spectral radiance, with a measured increase of four to five times for a 3.6 μm device, and a value that is >250 times larger than previously reported. [ABSTRACT FROM AUTHOR]

Wurtzite ScxAl1−xN/GaN (x = 0.13–0.18) multi-quantum wells grown by molecular beam epitaxy on c-plane GaN are found to exhibit remarkably strong and narrow near-infrared intersubband absorption in the technologically important 1.8–2.4 μm range. Band structure simulations reveal that, for GaN wells wider than 3 nm, the quantized energies are set by the steep triangular profile of the conduction band caused by intrinsic polarization fields. As a result, the intersubband transition energies provide unique and direct access to essential ScAlN polarization parameters. Measured infrared absorption indicates that the spontaneous polarization difference of the presumed lattice-matched Sc0.18Al0.82N/GaN heterostructure is smaller than the theoretically calculated value. The intersubband transition energies are relatively insensitive to the barrier alloy composition indicating negligible variation of the net polarization field in the probed 0.13–0.18 Sc composition range. [ABSTRACT FROM AUTHOR]

A wire-on-well (WoW) structure was fabricated using InGaAs/GaAs/GaAsP superlattice device growth technology. This structure modifies the local concentration of carriers in the quantum well and lengthens the carrier lifetime to increase carrier transport efficiency. However, the reason for this remains unclear. Therefore, we investigated the detailed carrier transition properties using photoluminescence (PL) and photoreflectance measurements. Regarding the PL spectra at 4 K, two characteristic peaks at 1.39 and 1.34 eV were observed. Both transitions are attributed to the recombination between the first quantum level of the electron (e1) and that of the heavy hole (hh1). We also discussed the carrier distribution in the WoW structure and found that the maximum carrier existing probabilities for e1 and hh1 are located at different positions. The less overlapping of the wavefunctions causes low transition probability and results in the observed long carrier lifetime. An additional prominent result in the WoW structure is the blue shift attributed to the 1.34 eV PL peak induced by increasing laser excitation power. We found that the blue shift occurred by the screening of the electric field caused by the compressive strain, as in the case of the quantum-confined Stark effect. [ABSTRACT FROM AUTHOR]

Nonvolatile memory using intersubband transitions and quantum-well electron accumulation in GaN/AlN resonant tunneling diodes (RTDs) is a promising candidate for high-speed nonvolatile memory operating on a picosecond timescale. This memory has been fabricated on sapphire(0001) substrates to date because of the high affinity between the nitride materials and the substrate. However, the fabrication of this memory on Si(111) substrates is attractive to realize hybrid integration with Si devices and nonvolatile memory and three-dimensional integration such as chip-on-wafer and wafer-on-wafer. In this study, GaN/AlN RTDs are fabricated on a Si(111) substrate using metal-organic vapor phase epitaxy. The large strain caused by the differences in the thermal expansion coefficients and lattice constants between the Si(111) substrate and nitride materials are suppressed by a growth technique based on the insertion of low-temperature-grown AlGaN and thin AlN layers. The GaN/AlN RTDs fabricated on Si(111) substrates show clear GaN/AlN heterointerfaces and a high ON/OFF ratio of >220, which are equivalent to those for devices fabricated on sapphire(0001) substrates. However, the nonvolatile memory characteristics fluctuate by repeated write/erase memory operations. Evaluation of the ON/OFF switching time and endurance characteristics indicates that the instability of the nonvolatile memory characteristics is caused by electron leakage through deep levels in the quantum-well structure. Possible methods for suppressing this are discussed with an aim of realizing high-speed and high-endurance nonvolatile memory. [ABSTRACT FROM AUTHOR]

A band design of a quantum cascade laser with a generation frequency higher than 6 THz and an active region based on four GaAs/Al0.14Ga0.86As quantum wells is proposed. Calculations were carried out based on the solution of the Schrödinger equation taking into account the dephasing of quantum states, as well as a closed system of balance equations. The temperature dependences of the gain at frequencies of 6.3–6.6 THz were calculated for the proposed quantum cascade laser with a double metal waveguide. Features of the proposed laser structure include two injection quantum wells and the suppression of non-radiative transitions between laser levels. According to calculations, this provides the maximum operating temperature of up to 81 K at 6.4 THz. The results of this study open up the way for quantum cascade lasers based on GaAs/AlGaAs to operate at frequencies above 6 THz. [ABSTRACT FROM AUTHOR]

The authors investigate the influence of local polarization on the thermoelectric properties of monolayer MoS2 using a tight-binding approach. It is found that strain-induced polarization in armchair monolayer MoS2 can be easily embedded to strongly enhance the thermoelectric efficiency ZT for quantum wells. The structure we proposed can achieve a figure of merit ZT of 0.8 at room temperature in an armchair MoS2 nanoribbon, and ZT achieves 1 at 500 K. The results facilitate insight and understanding of strain modulated thermoelectric properties of monolayer MoS2 nanodevices, provide theoretical guidance for experiments, and indicate their great potential in thermoelectric devices. [ABSTRACT FROM AUTHOR]

The authors investigate the influence of local polarization on the thermoelectric properties of monolayer MoS2 using a tight-binding approach. It is found that strain-induced polarization in armchair monolayer MoS2 can be easily embedded to strongly enhance the thermoelectric efficiency ZT for quantum wells. The structure we proposed can achieve a figure of merit ZT of 0.8 at room temperature in an armchair MoS2 nanoribbon, and ZT achieves 1 at 500 K. The results facilitate insight and understanding of strain modulated thermoelectric properties of monolayer MoS2 nanodevices, provide theoretical guidance for experiments, and indicate their great potential in thermoelectric devices. [ABSTRACT FROM AUTHOR]

The coupling of an electron gas confined by a harmonic potential and submitted to a strong magnetic field tilted in relation to the confining direction creates an excitation called here magneto-polariton. This work describes the origin of this excitation and calculates the energy eigenvalues for different tilted angles. It presents the reasons leading to the crossings and repulsions of the energy bands, the degeneracy of the states, the way the Fermi levels change with the magnetic field, the influence of an external electric field, and how the Hall resistance plateaus change with the change in the tilted angle. [ABSTRACT FROM AUTHOR]

This review concentrates on the microstructure of InxGa1−xN layers and quantum wells (QWs) in relation to their optical properties. The microstructure of InxGa1−xN, with a constant In(x) concentration, shifts with layer thickness. Only layers below 100 nm for x = 0.1 are nearly defect-free. A photoluminescence peak is observed at 405 nm, in line with ∼10% In, suggesting band-edge luminescence. Layers with greater thickness and In content present a corrugated surface with numerous structural defects, including V-defects, causing redshifts and multi-peaks in photoluminescence up to 490 nm. These defects, resembling those in GaN, lead to a corrugated sample surface. Atomic force microscopy shows a 3.7-fold larger corrugation in samples with 20 QWs compared to those with 5 QWs measured on 2 × 2 μm2 areas. Like in GaN, dual growth on different crystallographic planes results in varied QW thicknesses, influencing optical traits of devices made from InxGa1−xN layers. The purpose of this review and the chosen subject is to highlight the significant contribution of Wladek Walukiewicz and his group to the current research on the properties of InxGa1−xN, which are crucial alloys in the field of optoelectronics. [ABSTRACT FROM AUTHOR]

GaN/AlxGa1−xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6–8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such excitons are known to be spatially indirect due to the presence of the internal electric field which spatially separates the electron and hole wave functions. The growth conditions were optimized in view of minimizing the photoluminescence peak broadening. In particular, the impact of growth temperature (up to 900 °C) on the surface morphology, structural, and photoluminescence properties was studied. The diffusion of indirect excitons on the scale of tens of micrometers was measured with a micro-photoluminescence setup equipped with a spatially resolved detection. A dedicated model and its analysis allow us to extract from these measurements the exciton diffusion constant and to conclude on the optimum growth conditions for the GaN/AlxGa1−xN quantum well structures suited for studies of quantum collective effects in indirect exciton liquids. [ABSTRACT FROM AUTHOR]

Alkali metal dosing has nowadays been extensively used in angle-resolved photoemission spectroscopy (ARPES) for the in situ surface electron doping of materials to provide access to the unoccupied states. This technique also gives rise to nontrivial physical phenomena, such as the appearance of quantum well states and effects due to alkali metal intercalation. Here, we uncovered a previously unobserved type of electronic behavior induced by alkali metal dosing. By employing ARPES to study the evolution of the electronic structure of the Ti2O3 thin film upon rubidium (Rb) dosing, we found that the electron chemical potential of the system remains unchanged throughout the process. Interestingly, a series of electron-like band dispersions first appear with Rb dosing. A further increase in the Rb dosage leads to the eventual disappearance of the electron-like bands and the emergence of a set of hole-like bands. Our finding enriches the phenomenology brought about by alkali metal surface dosing, suggesting a novel functionality of this popular surface doping technique. [ABSTRACT FROM AUTHOR]

The effect of the GaAsP strain-compensating layer on type-II GaAs1−xSbx/InyGa1−yAs was investigated. GaAsSb/InGaAs multiple quantum wells (MQWs) without and with GaAsP strain-compensating layers were grown by molecular beam epitaxy. Increasing Sb or In compositions can extend photoluminescence (PL) emission at longer wavelength along with the highly induced compressive strain in the QWs. The power-dependent PL measured at low temperature reveals the type-II band characteristics of the GaAs1−xSbx/InyGa1−yAs system. A detailed analysis of the experimental data reveals that the GaAsP layers compensate the compressive strain of GaAsSb/InGaAs. The type-II QWs with GaAsP layers, (8 nm) GaAs0.84Sb0.16/(2.5 nm) In0.3Ga0.7As/(10 nm) GaAs0.85P0.15, emits PL at ∼1.1 μm, up to 210 K, while the PL of those strained sample without GaAsP vanishes at lower temperature. In view of the described sample, x-ray diffraction (XRD) analysis along with the simulation shows the validity of the procedure, resulting in nearly matched parameters of QW thicknesses and material compositions—(8.9 nm) GaAs0.835Sb0.165/(2.3 nm) In0.3Ga0.7As/(10.3 nm) GaAs0.85P0.15, with those of the designed QW. The thicknesses of QW from the TEM image, (8.6 nm) GaAsSb/(3.1 nm) InGaAs/(10.1 nm) GaAsP, agree well with the XRD results. [ABSTRACT FROM AUTHOR]

We introduce a multiple-carrier-lifetime model (MCLM) for light-emitting diodes (LEDs) with non-uniform carrier distribution, such as in multiple-quantum-well (MQW) structures. By employing the MCLM, we successfully explain the modulation response of V-pit engineered MQW LEDs, which exhibit an S21 roll-off slower than −20 dB/decade. Using the proposed model and employing a gradient descent method, we extract effective recombination and escape lifetimes by averaging the carrier behavior across the quantum wells. Our results reveal slower effective carrier recombination and escape in MQW LEDs compared with LEDs emitting from a single QW, indicating the advantages of lower carrier density achieved through V-pit engineering. Notably, the effective carrier recombination time is more than one order of magnitude lower than the effective escape lifetime, suggesting that most carriers in the quantum wells recombine, while the escape process remains weak. To ensure the reliability and robustness of the MCLM, we subject it to a comprehensive threefold validation process. This work confirms the positive impact of spreading carriers into several quantum wells through V-pit engineering. In addition, the MCLM is applicable to other LEDs with a non-uniform carrier distribution, such as micro-LEDs with significant surface recombination and non-uniform lateral carrier profiles. [ABSTRACT FROM AUTHOR]

The effect of inserting a nm-scale layer of Zn(Si,Ge)N2 into an AlGaN quantum well structure designed for light emission in the wavelength range from 255 to 305 nm is investigated here. The enhanced confinement of the hole within the quantum well results in an enhancement of the overlap of the hole and electron wave functions, resulting in an enhancement of the radiative recombination rate. In this theoretical calculation, for emission at a 270 nm wavelength, the enhancement in the wavefunction overlap can reach a factor of 7 when compared to an AlGaN quantum well device specifically engineered for optimal emission at the identical wavelength. Increases of almost an order of magnitude in both the peak spontaneous emission intensity and the radiative recombination rate are predicted. The peak emission wavelength can be tuned from 255 to 305 nm by adjusting the width and/or the composition of the inserted layer. The proposed structures provide a route to higher efficiency ultraviolet practical light emitting diodes and lasers. [ABSTRACT FROM AUTHOR]

The semiconductor quantum well based on mercury telluride is characterized by two distinct phases: conventional insulating phase and topological insulating phase with helical edge states. The system undergoes a topological quantum phase transition from one phase to the other, tuned by the critical geometric parameters of the quantum well. It is shown that the quantum states in each phase exhibit distinct flavors of Bloch oscillations, depending strongly on the geometric parameters and crystal momentum of the system. In particular, the group and Berry velocities and the real-space trajectories exhibit pronounced Bloch oscillations. Interestingly, the x - and y -components of the group velocity are interchanged by interchanging their corresponding components of the crystal momentum. In addition, a Gaussian wave packet undergoes distinct time evolution in each quantum phase of the HgTe quantum well. Moreover, the effects of applied in-plane electric and transverse magnetic fields are determined within the framework of Newtonian mechanics, leading to the geometric visualization of such an oscillatory motion. We find that in the presence of both applied in-plane electric and transverse magnetic fields simultaneously, the system undergoes a dynamic phase transition between confined and de-confined states, tuned by the relative strength of the fields. It is argued that the distinct Bloch oscillations originate from the peculiar band structure of HgTe quantum wells in each quantum phase. Furthermore, we find that the direct-current drift velocity in each quantum phase exhibits negative differential conductivity, a hallmark of the Bloch oscillation regime. [ABSTRACT FROM AUTHOR]

The high built-in polarization field is a fingerprint of III-nitride heterostructures. Alloy composition and doping profile significantly affect the magnitude of the electric field present in subsequent layers, but the sign of the electric field is usually defined by substrate polarity and external bias. Here, we propose to utilize acceptor and donor doping concentrations exceeding 1020 cm−3 to obtain a high junction field that can solely abolish built-in polarization for a polar (0001) InGaN/GaN quantum well (QW). We have used photoluminescence (PL), time-resolved PL (TRPL), and contactless electroreflectance in order to gain insight into the strength of the electric field present in the grown heterostructures. Good match between expected and measured electric field values was obtained. A dramatic decrease in the luminescence lifetime for a flat QW was confirmed using TRPL. The presented results open a way to realize devices that profit from the low built-in field, like photodetectors, using abundant polar substrates. [ABSTRACT FROM AUTHOR]

The quantum well diode (QWD) performs a dual role, functioning both as an emitter and a detector due to its unique feature of spectral overlap between emission and detection spectra. This dual functionality positions QWDs as promising candidates in the realm of multifunctional sensors. Furthermore, the well-established maturity of optical fiber communication, grounded in its intrinsic property of total reflection, makes it an ideal transmission medium for QWD sensing signals. Leveraging the coexisting emission and detection capabilities of QWDs, we have constructed a sensing system in this article. This system utilizes a QWD, which is stimulated to emit light, with the emitted light traveling through a specified length of optical fiber. A specialized load-bearing film, featuring an aluminum membrane on its rear to act as a mirror and an object of known weight on its front, induces deformation in the film, thereby altering the characteristics of the reflected light. This modulated light is subsequently captured by the QWD via the optical fiber, enabling the computation of the weight of the object. In this article, the QWD's emission peak is around 522 nm, and its detection range extends from 370 to 530 nm. Furthermore, by employing the appropriate approach, integrating QWD with optical fibers can be extended to sensing and measuring various physical quantities such as temperature, solution concentration, wind speed, and more. The advantages of QWDs include cost-effectiveness, multifunctionality, portability, and environmental friendliness. This technology represents a promising avenue for sensor control in the era of the Internet of Things. [ABSTRACT FROM AUTHOR]

We have studied the epitaxial growth of Si thin films on the Cd(0001) surface using low-temperature scanning tunneling microscopy. When deposited at low temperatures (100 K), Si atoms form dendritic islands with triangular shapes, indicating the existence of anisotropic edge diffusion in the process of Si film growth. After annealing to elevated temperatures, the triangular dendritic Si islands become hexagonal compact islands. Moreover, the 2D Si islands located on two different substrate terraces exhibit different heights due to the influence of quantum-well states in Cd(0001) films. Based on high-resolution scanning tunneling microscopy images, it is observed that the first, second, and third Si layers show the pseudomorphic 1 × 1 structure. In particular, the first and second layer islands reveal the opposite triangles, indicating the hexagonal close-packed stacking of Si atoms. These results provide important information for the growth of pristine Si films on metal substrates and the understanding of Si–metal interaction. [ABSTRACT FROM AUTHOR]

The luminescence efficiency of AlxGa1−xN quantum dots (QDs) and quantum wells (QWs), buried in AlN cladding layers and emitting in the ultraviolet range between 234 and 310 nm, has been investigated. The growth and optical properties have been done using similar aluminum composition (varying from 0.4 to 0.75) for both QDs and QWs. In order to compare as much as possible the optical properties, the QWs were fabricated with a growth time tuned such that the QW width is similar to the average height of the QDs. The photoluminescence (PL) showed emission ranging from 4 to 5.4 eV, putting into evidence differences in terms of full width at half maximum, PL intensity, and asymmetry of the line shape between QDs and QWs. The results show shorter wavelengths and a slightly narrower PL linewidth for QWs. To determine the light emission dependence with the electric field direction in the crystal, the evolutions of the emission diagrams for all samples were recorded along two orthogonal directions, namely, the "in-plane" (growth) and the "on-side" directions, from which the light emission was collected. For the whole QDs and QWs samples' series, the shapes of the emission diagram indicate emission in both in-plane and on-side directions, as evidenced by intra-valence band mixings caused by strain effects combined with the anisotropic Coulomb interactions that are particularly contributing to the polarization at wavelengths below 260 nm. Furthermore, the degree of polarization, determined for each sample, showed good agreement with results from the literature. [ABSTRACT FROM AUTHOR]

The polarization-induced quantum confined Stark effect has been recognized as a significant factor contributing to the Internal Quantum Efficiency (IQE) droop in light-emitting diodes (LEDs). This study focuses on the design of LEDs by investigating the InAlN/AlGaN interface. By incorporating InAlN quantum wells, a polarization-matched (PM) multi-quantum well (MQW) LED architecture was developed. While the flat conduction and valence bands on PM MQWs indicate an improved recombination rate, it is crucial to examine the impact on IQE, considering carrier confinement and injection efficiency influenced by the band offsets. This paper presents a numerical analysis comparing two LEDs emitting at 245 and 275 nm, respectively. The results demonstrate that the PM LED operating at 275 nm exhibits enhanced performance, benefiting from high probability density overlap. Conversely, the PM LED emitting at 245 nm demonstrates poor confinement, resulting in an overall low performance, regardless of polarization matching. [ABSTRACT FROM AUTHOR]

We present a setup for fast, low-bias (≤ 1 mV) DC transport measurements with μs time resolution for high ohmic resistance (≈ 20 k Ω) semiconducting samples. We discuss the circuitry and instrumentation for the measurement approach that can be applied to any kind of semiconductor device or (gated) two-dimensional material and demonstrate the main measurement artifacts in typical measurements by means of circuit simulation. Based on the latter, we present a simple two-step protocol for eliminating the measurement artifacts reliably. We demonstrate the technique by measuring the transitions between quantum Hall plateaus in the HgTe quantum wells and resolve plateaus as short-lived as 100 μs. [ABSTRACT FROM AUTHOR]

The characteristic polytype behaviors of SiC and accompanying low stacking fault energies are known to cause engineering issues, including polytype inclusions and bipolar degradation. The dependence of the relative stability of SiC polytypes and stacking fault energies on excess carrier concentration was investigated using first-principles calculations. The relative energy of 2H-, 4H-, and 6H-SiC to 3C-SiC increased with the excess electrons over 2 × 1019 cm−3, while the energy variation with excess holes was small. The stacking fault energies in 4H-SiC also exhibited a significant decrease with excess electrons over 1.0 × 1019 cm−3, whereas this change was minor with excess holes. These excess carrier dependencies were attributed to variations in the bandgap between polytypes. The energy level of the excess electrons was at the conduction band minimum; this was lowest in 3C-SiC, which had the lowest bandgap energy. Consequently, the energy of 3C-SiC with excess electrons was lower than that of other polytypes. Conversely, the valence band maximum lacked electrons when excess holes were present, resulting in a small difference among the Fermi levels of the polytypes. Hence, the energy difference between the SiC polytypes was similar for excess holes. Similarly, the stacking faults in SiC exhibited quantum-well structures by incorporating other polytypes with different bandgaps. With excess electrons, the Fermi level within the stacking faults was lower than that in the bulk crystals. Consequently, the stacking fault energy decreased for the same reason that the energy in 3C-SiC decreased under excess electron conditions. [ABSTRACT FROM AUTHOR]

This paper presents a novel physics-based analytical model for the injection recombination current in micro-light emitting diodes (μLEDs) with multiple quantum wells (MQWs), specifically excluding trap-assisted tunneling contributions at low forward voltages. The model simplifies the complex MQW structure by representing MQWs as a single equivalent quantum well (EQW). The μLED current is attributed to the recombination of injected holes and electrons within this EQW. Key parameters of the model encompass the EQW's position within the depletion region, hole diffusion coefficient, series resistance, and thermal resistance of the device. Experimental validation of the model is performed using current–voltage characteristics obtained from InGaN/GaN QW μLEDs. [ABSTRACT FROM AUTHOR]

Strain-related piezoelectric polarization is detrimental to the radiative recombination efficiency for InGaN-based long wavelength micro-LEDs. In this paper, partial strain relaxation of InGaN multiple quantum wells (MQWs) on the wafer scale has been demonstrated by adopting a partially relaxed InGaN superlattice (SL) as the pseudo-substrate. Such a pseudo-substrate was obtained through an electro-chemical etching method, in which a sub-surface InGaN/InGaN superlattice was etched via threading dislocations acting as etching channels. The degree of strain relaxation in MQWs was studied by x-ray reciprocal space mapping, which shows an increase of the in-plane lattice constant with the increase of etching voltage used in fabricating the pseudo-substrate. The reduced strain in the InGaN SL pseudo-substrate was demonstrated to be transferable to InGaN MQWs grown on top of it, and the engineering of the degree of strain relaxation via porosification was achieved. The highest relaxation degree of 44.7% was achieved in the sample with the porous InGaN SL template etched under the highest etching voltage. Morphological and structural properties of partially relaxed InGaN MQWs samples were investigated with the combination of atomic force and transmission electron microscopy. The increased porosity of the InGaN SL template and the newly formed small V-pits during QW growth are suggested as possible origins for the increased strain relaxation of InGaN MQWs. [ABSTRACT FROM AUTHOR]

This work is devoted to finding the optimal parameters of the HgTe/CdHgTe multi-quantum-well structure for the generation of two-dimensional plasmon-phonons under optical excitation. It is shown that a decrease in the bandgap and an increase in the number of quantum wells lead to two consequences. The first is a decrease in the nonequilibrium carrier threshold concentration and the threshold power density of optical excitation required for the plasmon-phonon gain. The second is a significant (tens of times) decrease in the effective refractive index of the generated plasmon-phonons, which improves the output of the plasmon-phonon radiation from the edge of the structure. The value of the optimal bandgap and the optimal number of quantum wells in the structure for plasmon-phonon gain are discussed. [ABSTRACT FROM AUTHOR]

Quantum well AlGaN/AlN/GaN high electron mobility transistor (HEMT) devices are a unique kind of semiconductor device that make use of a heterostructure made up of layers of different materials. In this study, the operational characteristics and performance optimization of HEMT devices, with a specific emphasis on the behavior of three‐quantum‐well (3QW) HEMT devices, are explored. The impact of gate voltage is explored and is observed that higher gate voltages result in lower pinch‐off voltages and higher saturation drain currents. In these findings, valuable insights for optimizing circuit designs and ensuring dependable operation across a range of electronic applications are offered. In addition, In this study, the device's ability to detect changes in gate voltage and its nonlinear characteristics is emphasized, providing valuable information for improving the device's performance. Additionally, the benefits of HEMT devices with negative threshold voltages are explored. Devices utilizing AlGaN/AlN/GaN structures demonstrate exceptional performance characteristics, such as rapid switching capabilities, high energy efficiency, and low noise performance, making them well suited for a wide range of scientific and technological applications. Finally, when comparing a QW HEMT device at different drain bias conditions (Vd = 1 V and Vd = 5 V), noticeable variations suggesting improved performance with higher drain bias. [ABSTRACT FROM AUTHOR]

Understanding quantum systems is of significant importance for assessing the performance of quantum hardware and software, as well as exploring quantum control and quantum sensing. An efficient representation of quantum states enables realizing quantum state tomography with minimal measurements. In this study, we propose an alternative approach to state tomography that uses tensor network representations of mixed states through locally purified density operators and employs a classical data postprocessing algorithm requiring only local measurements. Through numerical simulations of one-dimensional pure and mixed states and two-dimensional pure states up to size 8 × 8, we demonstrate the efficiency, accuracy, and robustness of our proposed methods. Experiments on the IBM and Quafu Quantum platforms complement these numerical simulations. Our study opens avenues in quantum state tomography for two-dimensional systems using tensor network formalism. Quantum state tomography is a fundamental tool for assessing the performance of quantum hardware and plays a crucial role in advancing quantum information processing. The authors present a method based on tensor network representations and local measurements, demonstrating accuracy and efficiency in characterizing noisy quantum states. [ABSTRACT FROM AUTHOR]

Numerical and analytical results of a study of the single-particle entropy of a quasi-two-dimensional electron gas with allowance for the nonparabolicity of the dispersion are presented. The dependence of the single-particle entropy on the chemical potential of the gas at and far from the resonance points is analysed. It is shown that at low temperatures, the nonparabolicity of the band gives a small correction to the single-particle entropy. Both at and far from the resonance point, this correction is proportional to the product of the nonparabolicity coefficient and temperature α T. The influence of the broadening of the size quantization levels on the single-particle entropy is estimated numerically. The results obtained are presented for different temperatures of the degree of nonparabolicity of the conduction band and the magnitude of broadening. [ABSTRACT FROM AUTHOR]

This paper explores the propagation loss in waveguides on directly bonded InP/Si substrates, using numerical simulations to understand the effect of voids within the waveguide structure. Using COMSOL Multiphysics, we developed a model to simulate light propagation, focusing on how void characteristics such as diameter and angle influence the propagation loss. Our findings reveal a correlation between void dimensions and the increased threshold current density in separate confinement heterostructure multiple quantum well laser diodes, thereby providing insights into optimizing waveguide design for enhanced laser performance on InP/Si substrates. This research underscores the critical role of substrate bonding quality in minimizing internal losses and improving device efficiency. [ABSTRACT FROM AUTHOR]

We discuss the electrical properties of molecular beam epitaxy (MBE) grown, modulation doped, Ge1− x Sn x quantum well devices. A consequence of the epitaxial growth process is that electronic disorder is introduced even in modulation doped quantum well structures and electrical transport properties that are characteristic of a high level of disorder are apparent. MBE growth of this material also results in the surface segregation of elemental β -Sn in the way that has been observed utilizing other epitaxial growth methods. A thermally activated, p-type mobility is a clear feature of the electrical properties with generally temperature independent hole densities ∼1012 cm−2 from the measured Hall effect and coming from the modulation doping. We present a discussion of Hall effect measurements in this disordered regime. The percolation carrier density in MBE modulation doped GeSn is in the region of ∼1 × 1012 cm−2 although Hall measurements in this regime are difficult to quantify when the resistivity >(h / e 2). In this notation h is Planck's constant and e is the unit of charge. Conductivities (σ) as low as ∼0.028 × (e 2/ h) × square can be measured in the four-contact ac configuration and the temperature dependence indicates a mobility edge in these p-type devices below ∼2 × 1012 cm−2. At lower temperatures (<∼1 K) the presence of a Coulomb gap can be determined using dc transport, constant voltage measurements where small ac current excitation is not available experimentally. This two-contact configuration can determine σ down to ∼10−6 × (e 2/ h), deep into the localization regime, revealing a hopping conductivity dominated system. We discuss the relevance of these electrical properties for MBE grown GeSn devices. [ABSTRACT FROM AUTHOR]

HgTe has been considered to be one of the most versatile topological materials. Depending on the in‐plane strain, Weyl and Dirac semi‐metal, as well as topological insulator phases, are feasible. Here, for the first time it is reported, that an InAs:S substrate promotes an initial 2D growth of a ZnTe thin layer and subsequent high crystalline quality ZnTe/CdTe superlattices serve as a smooth and continuous virtual substrate for the growth of (Cd,Hg)Te/HgTe/(Cd,Hg)Te heterostructures with unstrained quantum well HgTe (topological insulator) and compressively strained bulk HgTe (Weyl semimetal) by molecular beam epitaxy. Compared with the superlattices previously grown on GaAs substrates, the quantum well and bulk heterostructures exhibit homogeneous surfaces with root mean square roughnesses of 0.88–0.93 nm, which is three times lower than those observed for 3D islands (2.7–3.4 nm) on GaAs substrates. Additionally, magnetotransport measurements confirm high electronic quality and demonstrate that the S‐doped InAs substrate can be used as an effective back gate. These results manifest a (big) step forward toward the improvement of micro‐ and nanometer‐sized top‐ and back‐gated device fabrication on topological materials. [ABSTRACT FROM AUTHOR]

The optical properties of wurtzite violet InGaN/GaN coupled quantum well (QW) structures are experimentally studied using photoluminescence (PL) and electroluminescence (EL) spectroscopy. Two emission peaks, referred to as Peak H and Peak L, are observed in both PL and EL spectra, due to the ground state splitting induced by the well coupling. Experimental PL and EL results reveal that coupled QWs show different optical responses due to the different variation in the electric field inside the QW structure. Since the direction of the polarization electric field of the as-grown well/barrier layers is different, the external electric field applied by electrodes can change the energy band alignment between the well and the barrier layers, thus adjusting the coupling between the wells. Our results provide relevant information to improve our understanding of the optical properties of InGaN/GaN QWs and to develop novel optoelectronic devices. [ABSTRACT FROM AUTHOR]

This work reports on the possibility of sustaining a stable operation of polarization-doped InGaN light emitters over a particularly broad temperature range. We obtained efficient emission from InGaN light-emitting diodes between 20 K and 295 K and from laser diodes between 77 K and 295 K under continuous wave operation. The main part of the p-type layers was fabricated from composition-graded AlGaN. To optimize injection efficiency and improve contact resistance, we introduced thin Mg-doped layers of GaN (subcontact) and AlGaN (electron blocking layer in the case of laser diodes). In the case of LEDs, the optical emission efficiency at low temperatures seems to be limited by electron overshooting through the quantum wells. For laser diodes, a limiting factor is the freeze-out of the magnesium-doped electron blocking layer for temperatures below 160 K. The GaN:Mg subcontact layer works satisfyingly even at the lowest operating temperature (20 K). [ABSTRACT FROM AUTHOR]

We demonstrated GaN-based resonant tunneling diode (RTD) oscillators employing monolithic microwave integrated circuits. The GaN-based RTDs with a GaN quantum well and AlN double barriers were grown on freestanding c-plane semi-insulating GaN substrates using metal–organic chemical vapor deposition. The circuit components, including an RTD, a coplanar waveguide, a metal–insulator–metal capacitor, and shunt resistors, were monolithically fabricated on the GaN substrate. The circuits oscillated at a fundamental frequency of 17 GHz, which closely matched an estimated frequency using a three-dimensional electromagnetic simulator and a circuit simulator. This study contributes to the advancement of semiconductor high-frequency devices for millimeter wave and terahertz applications. [ABSTRACT FROM AUTHOR]

Two‐dimensional (2D) perovskite solar cells (PSCs) exhibit better stability compared with three‐dimensional PSCs. However, fundamental questions remain over the chemical phase space in the 2D perovskite framework. Here, phase distribution of alternating cations in the interlayer space 2D perovskite (GA(MA)nPbnI3n+1) is regulated by using potassium salt to control the assembly behavior of colloidal particles and manage the growth of quantum well. The strong affinity between the spacer cation and sulfonate can slow down the intercalation of organic spacer cations to provide a time window for the insertion of MA+, which is conducive to forming high n phase to facilitate the charge transportation. During the crystallization process, potassium salt is extruded to the grain boundary and produce a passivation effect. In this case, the ion migration channels and inlet of water and oxygen are cut off, which is beneficial for the stability of PSCs. A power conversion efficiency of 20.90% is obtained in this work, to the best knowledge, which is the highest PCE for all reported GA(MA)3Pb3I10 perovskite and the large‐area device (1.01 cm2) shows a high efficiency of 18.73 %. Besides, the devices deliver good humidity stability. [ABSTRACT FROM AUTHOR]

Highly efficient and spectrally pure single photon sources are desirable in fundamental studies of quantum physics and in many varied applications like in quantum metrology and quantum cryptography. 2D semiconductor colloidal quantum wells (CQWs) are quite appropriate as nanoscale photon sources because of their giant oscillator strengths and large absorption cross sections. The integration of such sources with dielectric metasurfaces exhibiting narrow resonances provides an excellent platform for highly efficient light‐matter interactions and the development of on‐chip light sources with high spectral purity. Here details on the use of capillary filling method are reported to achieve photonic coupling of CQWs to a metasurface resonator (MSR) featuring a square‐lattice geometry of holes on a slab‐waveguide to achieve strongly enhanced and almost spectrally pure emission of ≈3% of the original out‐of‐plane emission line‐width of the quantum emitters at room temperature. Long‐range exciton‐mediated photon transport facilitated by in‐plane slab waveguide modes is demonstrated and a theoretical basis to explain all the experimental data including that in terms of the MSR‐modified Lamb shifts and Purcell decays is provided. The results demonstrate a new platform with emergent photonic properties and suggest possibility of their use in on‐chip photonic quantum information processing. [ABSTRACT FROM AUTHOR]

The present study examines the electronic and optical properties of Rosen-Morse quantum wells, which exhibit hyperbolic and exponential potential profiles, subjected to intense laser fields and electric fields. Calculations are performed within the framework of the effective mass and parabolic band approximations. To determine the eigenvalues of electrons confined in these potentials, the diagonalization method was employed, utilizing orthonormal base functions that are solutions of an infinite square quantum well. To calculate the total absorption coefficient, including linear and nonlinear terms for transitions between the lowest two energy levels, a combination of the standard density matrix formalism and the perturbation expansion method was employed. Our results indicate that intense laser field is a valuable tool for controlling the confinement potential of low-dimensional systems, enabling the appropriate tuning of these systems. While the electric field applied only to symmetrical structures breaks the symmetry and causes the peaks in the absorption spectrum to shift to red, a blue shift of the absorption peaks was achieved with the combined effect of the selected geometric shapes of the quantum wells and the electric field. Therefore, it is hoped that the obtained results will provide important improvements in device applications with a suitable choice of both fields and structure parameters. [ABSTRACT FROM AUTHOR]

This work will explore the generations of quantum nonlocalities (as entanglement, Bellnonlocality, and steerability) for two quantum wells (excitons) in dissipative microcavities containing a linear optical medium. An optical fiber links the microcavities. The generated two‐exciton nonlocalities are explored by using Bell inequality, steering inequality, and entanglement of formation. For initial correlated and uncorrelated states, the ability of the excitation–photon–fiber interactions to produce new generation and robustness of the two‐exciton nonlocality is investigated under the effects of the couplings of the exciton–photon and fiber–photon interactions as well as of the dissipations and the optical susceptibility. It is found that increasing the optical susceptibility enhances the regularity and amplitudes, reduces the frequencies of two‐exciton nonlocality dynamics, and supports dissipation degradations. For the initial uncorrelated state, decreasing the difference between the exciton–photon and fiber–photon couplings enhances the generations of the nonlocalities. For the initial correlated state, increasing the exciton–photon and fiber–photon couplings enhances the nonlocality conservation. For open microcavites, increasing the exciton–photon and fiber–photon couplings and the difference between them supports the nonlocality degradations resulting from the external environment dissipations. [ABSTRACT FROM AUTHOR]

This study presents a quantum well model using the transfer matrix technique to analyze the charge transfer characteristics of nanostructure sequences in both DNA and superlattices. The unconfined state, or unbound state, above the quantum well is used to investigate carrier behaviors in a semiconductor nanostructure. These analytical approaches can be extended to enhance the understanding of charge transfer in DNA nanostructures with periodic and aperiodic sequences. Experimental validation was conducted through photoreflectance spectroscopy on nanostructures within the semiconductor superlattices. Furthermore, the study's findings were compared with earlier research by Li et al. on the thermoelectric effect and its dependence on molecular length and sequences in single DNA molecules. The results showed agreement, offering novel insights into charge transfer and transport in DNA nanostructures across various sequence types. [ABSTRACT FROM AUTHOR]

Quasi‐2D perovskites have attracted significant attention because of their environmental robustness and superior long‐term stability compared with their 3D counterparts. However, they typically consist of a mixture of multiple quantum wells with different optoelectrical properties, which degrades the electronic properties and hinders further electronic applications. Here, to challenge this issue, a surface p‐doping strategy involving the introduction of a thiophene‐containing polymer onto the surface of quasi‐2D tin perovskites is reported. The tin ions in the perovskites effectively interact with the sulfur atoms in the thiophene moieties, thereby generating hole carriers and inducing p‐doping. The resulting doped quasi‐2D perovskites exhibit excellent surface crystallinity, lower trap density, and enhanced charge carrier transport capability along the perovskite semiconductor channels. Consequently, the doped quasi‐2D tin perovskite‐based transistors exhibit a high field‐effect mobility of 53 cm2V−1s−1 (7 cm2V−1s−1 for the control device) and an outstanding on/off ratio (>107), together with superior operational stability. [ABSTRACT FROM AUTHOR]

Solid‐state infrared sources designed to emit wavelengths above 2 µm often face challenges in achieving high emission efficiency, minimizing power consumption, and reducing fabrication costs. In response, a 2.4 µm wavelength light emitting diode (LED) is developed using metamorphic In0.83Ga0.17As/InAs0.3P0.65Sb0.05 multiple quantum well (MQW) heterostructures. The substantial conduction (94 meV) and valence band offsets (300 meV) within this type‐I MQW LED architecture result in strong carrier confinement, improving electron and hole wavefunction overlap. Despite a notable lattice mismatch of 2.0% between the MQWs and InP substrate, the resulting LED wafer exhibits exceptionally low surface roughness (1.1 nm) and well‐defined, sharp interfaces within the heterostructures. Furthermore, this MQW LED exhibits favorable emission properties, including a low turn‐on field, minimal efficiency droop, and stable emission wavelength across varying injection currents. These advancements underscore the potential of such short‐wave infrared emitters for scalable applications in fields such as inspection, optical on‐chip communication, and biomedical diagnostics. [ABSTRACT FROM AUTHOR]

An isotopically enriched 28Si/SiGe undoped heterostructure is a promising platform for Si-based qubits due to the long coherence time by reducing 29Si isotopes with non-zero nuclear spins. Carriers in the buried Si quantum well (QW) of the Si/SiGe heterostructures could tunnel to the oxide/Si interface, increasing charge noise and leading to charge instability. In this work, we investigate the tunneling effects on carrier distribution and transport properties in an isotopically enriched 28Si/SiGe undoped heterostructure and its transient characteristics by controlling the hold time of gate biasing under different drain biases. By holding the gate bias for a longer time, the drain is reduced since more carriers in the buried QW tunnel to the oxide interface. Furthermore, under a larger drain bias, more carriers can move across the Si/SiGe heterojunction to the oxide interface and are trapped, resulting in a stronger current reduction, which is explained by a lucky electron model. [ABSTRACT FROM AUTHOR]

Excitons are expected to be a high‐efficiency emission source in UV light‐emitting devices. However, the damping of the excitonic laser oscillation has been reported under conditions where the excitonic states are expected to be populated in the conventional theory. In order to understand the exciton dynamics under the thermal nonequilibrium state, a theoretical model including various energy species in semiconductors such as electrons, phonons, and photons is required. Herein, a 2D phononic–excitonic–radiative model is constructed to analyze the exciton dynamics in a 2D system. 2D excitons with four principal quantum number states and the continuum in the lowest energy level of the AlN/GaN/AlN quantum wells are considered. It is found that the 2D phonon significantly augments the excitation transition rate. When the high recombination rate corresponding to stimulated emission is considered, the exciton binding energy of 108 meV is not enough to reduce the population in the high‐order discreet states and the continuum states, while the binding energy of 215 meV corresponding to the one monolayer GaN has an advantage of reducing these populations. The analysis of population flux has an advantage in discussing the increase in the kinetic energy transfer to the 1S exciton. [ABSTRACT FROM AUTHOR]