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Studies into scatterings of photonic structures have been so far overwhelmingly focused on their dependencies on the spatial and spectral morphologies of the incident waves. In contrast, evolutions of scattering properties through another parameter space of incident directions (momentum space) has not attracted sufficient attention, with the underlying general governing rules still unrevealed. Here, from the perspective of quasi‐normal modes (QNMs), the momentum‐space scattering extremizations with respect to varying incident directions of plane waves are investigated. It is revealed that for effective single‐QNM excitations, scatterings are maximized exactly along those directions where the QNM radiation reaches its maximum, with matched incident and radiation polarizations. For an arbitrary direction, when the incident polarization is tuned to be orthogonal to that of the mode radiation, the QNM cannot be excited and thus the scatterer becomes invisible with null scatterings. The principles revealed are protected by fundamental laws of reciprocity and energy conservation (optical theorem), which can be further expanded and applied for other branches of wave physics. [ABSTRACT FROM AUTHOR]

In this paper, we systematically investigated the influence of adhesive residue existing in deterministic transfer process upon graphene, and put forward a rapid and effective way named ultraviolet-ozone (UVO) treatment to reduce this negative effect. Results indicate that this adhesive residue may cause poor contact between metal and graphene, thus greatly degrading the performance of the device. However, this unpleasant influence could be reduced effectively by adopting UVO treatment. This work may be helpful to fabricate higher performance functional devices based on two-dimensional materials by removal of the adhesive residue. A combination of mechanical exfoliation and deterministic transfer technique is mostly adopted to fabricate 2D (two-dimensional) heterostructure samples. However, the PVA (polyvinyl alcohol) sacrificial polymer layer may not be totally removed in the preparation of heterostructures, thus greatly degrading the performance of the device. In this paper, we have successfully removed the adhesive residue by applying ultraviolet-ozone treatment. This work may be helpful to fabricate higher performance functional devices based on 2D materials by removal of the adhesive residue. [ABSTRACT FROM AUTHOR]

Two-dimensional layered heterostructures show great potential to develop optoelectronic systems. Here, we have investigated the photoresponse properties of two contact interfaces in few-layer graphene–WSe 2 heterostructures. The photoresponsivity of graphene–WSe 2 contact interface is about 2.67 mA/W, and the photoresponsivity of WSe 2 –metal contact interface is about 0.2 mA/W. Photocurrent images show that the two contact interfaces behave differently under drain voltage from − 0.5 V to 0.5 V. The photoresponsivity of one contact interface increases with the drain voltage, and that of the other decreases with the drain voltage. Experimental results and band diagram studies prove that the photoresponse properties of contact interfaces are tuned by small drain voltage. This study will be beneficial for understanding the effect of drain voltage on the heterostructures. [ABSTRACT FROM AUTHOR]

Abstract: Single-electron tunneling devices based on self-assembled gold nanoparticles have been fabricated. Two main transport mechanisms were found to interpret the conductive behaviors of the devices. One is attributed to the electron emission, and the other is depended on the bias tunneling with asymmetrical tunnel barriers. The resemblant Coulomb Blockade response was measured at room temperature. The charging energy is estimated to be much larger than the thermal energy. The Coulomb Island sizes calculated from the experimental data are consistent with the size range of the gold nanoparticles used in the self-assembly fabrication. [Copyright &y& Elsevier]

The mesoporous silica thin films (MSTFs) synthesized by evaporation-induced self-assembly were loaded with gold nanoparticles (GNPs). The TEM and XRD characterizations showed that the template of MSTF possessed a well-ordered mesostructure, and GNPs can be well crystallized in the thin film by neutralization and hydrogen-reduction reactions. The z-scan technique was used for studying the nonlinear optical properties of the GNPs/MSTF nanocomposite. The results showed that this kind of material was possessed of a relatively feeble nonlinear absorption but an obvious nonlinear refraction. The nonlinear refractive index was estimated to be 7.9 × 10−11 cm2/W and the theoretical fitting well matched with the measured data. [ABSTRACT FROM AUTHOR]

Compared with well-developed free space polarization converters, polarization conversion between TE and TM modes in the waveguide is generally considered to be caused by shape birefringence, like curvature, morphology of waveguide cross section and scattering. Here, we study the polarization conversion mechanism in 1-THz-FSR X-cut lithium niobate microrings with multiple-resonance condition, that is the conversion can be implemented by birefringence of waveguides, which will also introduce an avoided-mode crossing. In the experiment, we find that this mode crossing results in severe suppression of one sideband in local nondegenerate four-wave mixing and disrupts the cascaded four-wave mixing on this side. Simultaneously, we propose one two-dimensional method to simulate the eigenmodes (TE and TM) in X-cut microrings, and the mode crossing point. This work will provide one approach to the design of polarization converters and simulation for monolithic photonics integrated circuits, and may be helpful to the studies of missed temporal dissipative soliton formation in X-cut lithium niobate rings. [ABSTRACT FROM AUTHOR]

Violet phosphorus (VP), a novel two-dimensional (2D) nanomaterial, boasts structural anisotropy, a tunable optical bandgap, and superior thermal stability compared with its allotropes. Its multifunctionality has sparked widespread interest in the community. Yet, the VP's air susceptibility impedes both probing its intrinsic features and device integration, thus making it of urgent significance to unveil the degradation mechanism. Herein, we conduct a comprehensive study of photoactivated degradation effects on VP. A nitrogen annealing method is presented for the effective elimination of surface adsorbates from VP, as evidenced by a giant surface-roughness improvement from 65.639 nm to 7.09 nm, enabling direct observation of the intrinsic morphology changes induced by photodegradation. Laser illumination demonstrates a significant thickness-thinning effect on VP, manifested in the remarkable morphological changes and the 73% quenching of PL intensity within 160 s, implying its great potential for the efficient selected-area etching of VP at high resolution. Furthermore, van der Waals passivation of VP using 2D hexagonal boron nitride (hBN) was achieved. The hBN-passivated channel exhibited improved surface roughness (0.512 nm), reduced photocurrent hysteresis, and lower responsivity (0.11 A/W @ 450 nm; 2 μW), effectively excluding adsorbate-induced electrical and optoelectrical effects while disabling photodegradation. Based on our experimental results, we conclude that three possible factors contribute to the photodegradation of VP: illumination with photon energy higher than the bandgap, adsorbed H2O, and adsorbed O2. [ABSTRACT FROM AUTHOR]

Due to the lack of true ship angular flexure data, it is difficult to evaluate its measurement error of the angular velocity matching method in practice. In this paper, the cause of the measurement error of the ship flexure angle is analyzed in theory, and an evaluation method for the ship angular flexure measurement error based on the principle of relevance is proposed. The proposed method provides a prediction formula to describe the estimation error of the static flexure angle based on the off-diagonal elements of the error covariance matrix P in Kalman filtering. In addition, the optimized coefficient F is introduced to make the prediction error range better describe the real error variation. The optimized coefficient F ensures that the proposed formula has good prediction effects in all three directions. Simulations based on the actual measured ship flexure data are carried out, and the simulation results verify the capability of the prediction formula. The proposed method can be used in the evaluation of the ship flexure measurement error. [ABSTRACT FROM AUTHOR]

This paper presents an comprehensive study of light trapping and absorption enhancement in graphene through metallic plasmonic structures and shows a strategy to realize both ultrabroadband and strong absorption enhancement. Three different plasmonic absorber designs are investigated by numerical simulations. The excitation of localized plasmons in the metallic structures significantly enhances the interactions between graphene and light at the resonances. By employing a splitted cross design for plasmonic resonant antennas and integrating two types of sub-antennas with different sizes, more than 30% of optical absorption in monolayer graphene is realized in a ultrabroad spectral range from 780 to 1760 nm. This enhancement functionality can be translated to any wavelength band from ultraviolet to terahertz ranges by modifying the geometric design of the plasmonic structure and can be applied for other two dimensional materials and their heterogeneous structures. It may significantly improve the efficiency of optical devices such as broadband photodetectors and solar cells based on graphene and other two-dimensional materials. [ABSTRACT FROM AUTHOR]

Van der Waals epitaxy growth of two-dimensional materials promise controllable fabrication of novel artificial heterostructures. Here, we report molecular beam epitaxy growth of continuous molybdenum ditelluride (MoTe 2 ) films on graphene substrates with good stoichiometry in both 2H and 1T′ phases. Post-growth annealing reveal phase transition suppressed in Te-rich atmosphere, through in-situ scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy. Our results suggest a new route to fabricate atomically ultrathin MoTe 2 lateral heterophase homojunctions, showing potential applications in future lateral thin-film transistors. [ABSTRACT FROM AUTHOR]

Explorations of indefinite nanocavities have attracted surging interest in the past few years as such cavities enable light confinement to exceptionally small dimensions, relying on the hyperbolic dispersion of their consisting medium. Here, we propose and study indefinite graphene nanocavities, which support ultra-compressed mode volumes with confinement factors up to 10 9 . Moreover, the nanocavities we propose manifest anomalous scaling laws of resonances and can be effectively excited from the far field. The indefinite graphene cavities, based on low dimensional materials, present a novel rout to squeeze light down to the nanoscale, rendering a more versatile platform for investigations into ultra-strong light–matter interactions at mid-infrared to terahertz spectral ranges. [ABSTRACT FROM AUTHOR]

A very attractive advantage of graphene is that its Fermi level can be regulated by electrostatic bias doping. It is of great significance to investigate and control the spatial location of graphene emission for graphene thermal emitters, in addition to tuning the emission intensity and emission spectrum. Here, we present a detailed theoretical model to describe the graphene emission characteristics versus gate voltages. The experimentally observed movement of the emission spot and temperature distribution of graphene emitters are basically in agreement with those from the theoretical model. Our results provide a simple method to predict the behavior of graphene emitters that is beneficial for achieving the spatial dynamic regulation of graphene infrared emission arrays. [ABSTRACT FROM AUTHOR]

Van der Waals heterojunctions, formed by stacking two-dimensional materials with various structural and electronic properties, opens a new way to design new functional devices for future applications and provides an ideal research platform for exploring novel physical phenomena. In this work, bilayer graphene/WS2/metal heterojunctions (GWMHs) with vertical architecture were designed and fabricated. The tunneling current–bias voltage (It − Vb) properties of GWMHs can be tuned by 5 × 106 times in magnitude for current increasing from 0.2 nA to 1 mA with applied bias voltage increasing from 10 mV to 2 V. Moreover, the transfer properties of GWMHs exhibit n-type conduction at Vb = 0.1 V and bipolar conduction at Vb = 2 V; these findings are explained well by direct tunneling (DT) and Fowler–Nordheim tunneling (FNT), respectively. The results show the great potential of GWMHs for high-power field-effect transistors (FETs) and next-generation logic electronic devices. [ABSTRACT FROM AUTHOR]

As the important electric loss of a graphene resonator, intrinsic current loss has received increasing attention, but the existing research is limited to qualitative analysis and approximate calculation. Based on the microscopic behavior of carriers, we have accurately established the calculation model of induced current loss, which is in good agreement with the existing experimental results. Compared with the previous models, the model in this work can not only fit the inverse V-shaped Q − Vdc curve well but also be compatible with the V-shaped Q − Vdc curve, which is beyond the reach of the previous models. In addition, the calculation results show that selecting the appropriate gate voltage combination when stimulating the graphene resonator can increase the quality factor by nearly 1–2 orders of magnitude. Furthermore, we reasonably explain the importance of DC gate voltage applied in the experiment compared with the case of non-DC gate voltage. This work realizes the accurate calculation of intrinsic current loss and is of great significance for reducing the intrinsic current loss in the practical application of graphene resonators. [ABSTRACT FROM AUTHOR]

Abstract: Electron-beam mediated substitutional doping of monolayer MoS2 was recently demonstrated, opening a new way to modify its properties. Using first-principles calculations, the structural, electronic and magnetic properties of monolayer MoS2 doped with nonmetal and transition-metal atoms are investigated. All dopants are strongly bound to the structures, inducing interesting magnetic behaviors. While all H, B, N and F-doped monolayers have magnetic moment of 1.0 , V, Cr, Mn, Fe and Co-doped ones attain 1.0, 4.0, 3.0, 3.0 and 1.0 , respectively. Additionally, MoS2 undergoes transition from semiconductor to half-metal in the presence of H, B or Cr doping. [Copyright &y& Elsevier]

[Display omitted] • Surface treatment method of nitrogen plasma combined with vacuum thermal annealing effectively restore clean surfaces of hydrophilic violet phosphorus. • Thickness etching to violet phosphorus can be achieved by nitrogen plasma treatment. • Nitrogen atom incorporation and resultant non-destructive p-doping to violet phosphorus emerge during the nitrogen plasma treatment. • High-performance violet phosphorus photodetectors with excellent sensitivity can be fabricated by nitrogen plasma treatment. Violet phosphorus (VP), a recently developed kind of layered material, features exotic in-plane anisotropy, alluring thickness-dependent bandgap, and better thermal stability than its phosphorus allotropes. Such a broad variety of functionalities indicates VP is a promising candidate for advanced nanophotonics. However, its hydrophilic surface-induced air instability hinders further exploration and extensive device integration for photodetection and beyond. Herein, we report the successful restoration of the clean VP surfaces through nitrogen plasma combined with vacuum thermal annealing. Via manipulation of plasma excitation power, we can also achieve thickness etching and nondestructive p-doping to VP, paving the way for fabrication and engineering of VP photodetectors. As a proof-of-concept, plasma-treated VP photodetectors have been fabricated. Stemming from the plasma treatment-induced p-doping and hole trapping centers, the VP photodetectors exhibit giant photoresponse enhancement, reaching a high responsivity of 1.923 A/W, and is dramatically improved by 1300% compared with that before plasma treatments, which envisions high-sensitivity photodetection for next-generation more-than-Moore optoelectronics. [ABSTRACT FROM AUTHOR]

Non-reciprocal phenomena generated by optical nonlinear effects without the requirement of external bias have important applications in modern photonics. In this paper, an optical nonlinear metasurface based on monolayer graphene integrated silicon resonant gratings is proposed. It is numerically confirmed that this type of metasurface can excite high-Q guided mode resonances in the communication band with normal incidence. Significant optical Kerr effect is achieved in the metasurface through high third-order polarization coefficient of graphene, and by changing the width and depth of the grating, the nonlinear effect of the metasurface can be effectively controlled to realize the application under different illumination conditions. In addition, remarkable non-reciprocity phenomenon is realized at an incident intensity of 0.085 G W / m 2. As an example, with a forward transmittance of 0.732 and a backward transmittance of 0.025, an optical diode is implemented at 1549.1 n m. Image 1 [ABSTRACT FROM AUTHOR]

The stellar/inertial integrated navigation system, which combines the inertial navigation system (INS) and the star tracker, can restrain the accumulated INS errors. In the traditional loosely coupled stellar/inertial integration method, the star tracker needs to observe more than two navigation stars on an image for attitude determination and to use the attitude information as the observation to estimate the systematic errors of the INS. However, under strong background radiation conditions, the star number in the field of view (FOV) usually drops below 3; thus, the loosely coupled method fails to work. To overcome this difficulty, an improved tightly coupled stellar/inertial integration method based on the observation of the star centroid prediction error (SCPE) is proposed in this paper. It calculates the difference between the extracted star centroid and the predicted star centroid, namely, the SCPE, as the observation and then estimates the INS errors with a Kalman filter. Numerical simulations and ground experiments are conducted to validate the feasibility of the tightly coupled method. It is proved that the proposed method, which makes full use of all star observation information, can improve the navigation accuracy compared with the loosely coupled method and is more robust when there are not enough stars in the FOV. [ABSTRACT FROM AUTHOR]

Semiconducting molybdenum disulfide (MoS2) has drawn a lot of attention for its exceptional electronic and optoelectronic properties. Despite the potential advantages, the large contact resistance at the metal–MoS2 interfaces has been one of the biggest obstacles for the realization of ideal MoS2 transistors. One solution to improve the metal–MoS2 interfaces is to use the graphene electrodes. Here, we provide a selective etching method for fabricating graphene-contacted MoS2 transistors. It has been proved that the graphene could be totally etched with Ar+ plasma treatment, and the multilayer MoS2 flake can also be reduced layer by layer with Ar+ plasma treatment. By etching graphene selectively in graphene–MoS2 heterostructures, one can obtain graphene-contacted MoS2 transistors successfully. The transistor reported in this paper shows an on–off ratio about 106 and a carrier mobility about 42 cm2 V−1 s−1. This selective etching method would be beneficial for some other graphene-contacted electronic devices. [ABSTRACT FROM AUTHOR]

The twist-angle dependence of exciton absorption in a molybdenum disulfide (MoS2)/graphene heterostructure (MGH) is reported. Using photoluminescence (PL) spectroscopy, we found that, as the twist angle increased, the MGH demonstrated an enhancement of PL intensity and a peak position blueshift, indicating that the exciton radiative recombination was positively correlated with the twist angle. In addition, optical reflectance measurements were performed in order to investigate the exciton absorption in the MGH. It was found that the reflectance of MGH samples was twist-angle dependent at wavelengths of 620 and 670 nm, which corresponds to the PL peak positions of MoS2. This was attributed to the change in interlayer charge transfer for different twist angles. Our findings confirm the tunability of the electronic structure in MGHs via the interlayer twist, which enriches our understanding of interlayer coupling and is important for the future development of electronic and optoelectronic devices based on 2D material heterostructures. [ABSTRACT FROM AUTHOR]

Atomically thin molybdenum disulfide (MoS 2) has been treated as a promising optoelectronic material, due to its strong photoluminescence (PL) emission. Here, we demonstrate the tunability of the PL properties of bilayer MoS 2 through interlayer twist. The PL emission peak position, full-width-at-half-maximum (FWHM) and intensity are found to be dependent on the twisted angle, which reach their extremum for the twisted angle around 40°. This PL modulation is attributed to the change of the interlayer coupling between the adjacent MoS 2 layers. In addition, peak A splitting of PL spectra is found in twisted bilayer MoS 2 , due to the doping effect from substrate. These results enrich our understanding of the relationship between PL emission and interlayer coupling, which is significant for optical and electrical applications of twisted bilayer MoS 2 (tBLM). • A systematic investigation on twisted angles dependence of PL emission of tBLM. • The PL emission properties were found to be dependent on the twisted angles. • Exotic peak splitting of A is also observed. • This PL modulation is attributed to the change of the interlayer coupling. [ABSTRACT FROM AUTHOR]

Based on the first-principles calculations, we investigate the magnetic and electronic properties of α-graphyne nanoribbons (NRs). We show that all the armchair α-graphyne NRs are nonmagnetic semiconductors with band gaps as a function of ribbon widths. The zigzag α-graphyne NRs are found to have magnetic semiconducting ground state with ferromagnetic ordering at each edge and opposite spin orientation between the two edges. Under the application of transverse electric field, we further predict the existence of half-metallicity in the zigzag NRs which strongly depends on the width of the ribbon. [ABSTRACT FROM AUTHOR]

The purpose of this work was to study bias error in acceleration-based transfer alignment, which is probably caused by cross-correlation between the dynamic lever-arm and the linear motion of a ship. A new prediction model for the cross-correlation-caused error is proposed in this paper. We adopt the Bernoulli-Euler Beam as a simplified ship hull-girder model to verify the existence of the cross-correlation. Then, the mathematical mechanism and the prediction model of the bias error are deduced via the ordinary least squares theory. Three factors influence the bias error in the prediction model: the amplitude of the dynamic lever arm acceleration, the amplitude of the ship motion acceleration, and the cross-correlation between them. Simulation experiments are then conducted to test the influence of the factors. The results show that the mechanism analysis is reasonable, and the bias error prediction model is in agreement with the experimental results. Thus, the proposed prediction model has the potential to deduce the bias error in high-accuracy transfer alignment. [ABSTRACT FROM AUTHOR]

Graphene photodetectors are highly attractive owing to its ultra-fast and wide-range spectral response from visible to infrared benefit from the superior carrier mobility and the linear dispersion with zero bandgap of graphene. The application of graphene photodetectors however is seriously limited by the low intrinsic responsivity in the order of ∼10 mA/W. Here, we demonstrate photogating field-effect transistors based on pure monolayer graphene with simple device structures. The light absorption in the heavily n-doped silicon/silicon oxide (Si/SiO2) substrate generates an additional photovoltage that effectively modulates the conductance of graphene, leading to room temperature graphene photodetectors with high responsivity of ∼500 A/W for 450 nm light and ∼4 A/W for 1064 nm light, respectively. The generated photocurrent changes with applied gate voltage and shows a strongly nonlinear power dependence. Meanwhile, the photoresponse of graphene exhibits a cut-off wavelength of ∼1100 nm, confirming the dominance photogating effect caused by light absorption in Si/SiO2 substrate. Considering the great compatibility of graphene to Si technology, our result paves a way for high-performance chip-integrated photodetectors. [ABSTRACT FROM AUTHOR]

Actively tunable metasurfaces have widespread applications in optics from light modulation, beam steering to LiDAR and many others. Recently, lithium niobate (LN) based metasurfaces have attracted significant attention for their great potentials in integrated electro-optically tunable metadevices. However, the hardness and chemical inactivity of LN make it difficult to process, which severely limits the quality (Q) factors and performance of LN based metasurfaces. In this paper, a type of high Q etchless LN resonant metasurface is experimentally demonstrated. The metasurface shows a measured Q factor of 563 around the telecom wavelength and even higher Q factors are expected to be realized using similar designs in the future. This work represents an important progress for LN resonant metasurfaces and paves the way for the development of high performance electro-optically tunable LN metadevices. • Demonstrate a type of high-Q LN resonant metasurface in telecom wavelength range. • Uses a dielectric-loaded design with subwavelength patterns. • The LN is etchless to avoid the fabrication difficulty. • The measured Q factor of 563 is almost one order higher than the previous work. • Paves the way for the development of high performance EO tunable LN metadevices. [ABSTRACT FROM AUTHOR]

2H phase Molybdenum ditelluride (MoTe2) is a layered two-dimensional (2D) semiconductor that has recently gained extensive attention for its intriguing properties, demonstrating great potential for nanoelectronics and optoelectronics. Optimizing the electric contacts to MoTe2 is a critical step for realizing high performance devices. Here, we demonstrate Co/hBN tunnel contacts to few-layer MoTe2. In sharp contrast to the p-type conduction of Co contacted MoTe2, Co/hBN tunnel contacted MoTe2 devices show clear n-type transport properties. Our first principles calculation reveals that the inserted few-layer hBN strongly interacts with Co and significantly reduces its work-function by ∼1.2 eV, while MoTe2 itself has a much weaker influence on the work-function of Co. This allows us to build MoTe2 diodes using the mixed Co/hBN and Co contact architecture, which can be switched from p-n type to n-p type by changing the gate-voltage, paving the way for engineering multi-functional devices based on atomically thin 2D semiconductors. [ABSTRACT FROM AUTHOR]

Abstract: Semiconducting molybdenum ditelluride (2H‐MoTe2), a fast‐emerging 2D material with an appropriate band gap and decent carrier mobility, is configured as field‐effect transistors and is the focus of substantial research interest, showing hole‐dominated ambipolar characteristics. Here, carrier modulation of ambipolar few‐layer MoTe2 transistors is demonstrated utilizing magnesium oxide (MgO) surface charge transfer doping. By carefully adjusting the thickness of MgO film and the number of MoTe2 layers, the carrier polarity of MoTe2 transistors from p‐type to n‐type can be reversely controlled. The electron mobility of MoTe2 is significantly enhanced from 0.1 to 20 cm2 V−1 s−1 after 37 nm MgO film doping, indicating a greatly improved electron transport. The effective carrier modulation enables to achieve high‐performance complementary inverters with high DC gain of >25 and photodetectors based on few‐layer MoTe2 flakes. The results present an important advance toward the realization of electronic and optoelectronic devices based on 2D transition‐metal dichalcogenide semiconductors. [ABSTRACT FROM AUTHOR]

Non-uniform photocurrent is usually generated at the overlapped region of the heterostructures, and its potential applications may be hindered by the spatial uniformity issue of the device photoresponse. Here, nearly a uniform photoresponse at the overlapped region of the thermally oxidized Ni and molybdenum disulphide (MoS2) heterostructures is obtained. Further characterizations reveal that several nanometers Ni is rightly under the NiOx layer formed at the surface of the film in the oxidation process. The heterostructures based on layered MoS2/NiOx/Ni with highly conductive bottom Ni show a high uniform photoresponse with an external quantum efficiency (EQE) of 1.4% at 532 nm. Moreover, successful integration of multiple devices suggests a great priority for such a structure for highly integrated uniform photodetectors. [ABSTRACT FROM AUTHOR]

Coulomb blockade mediated field-emission current was observed in single-electron tunneling devices based on self-assembled gold nanoparticles at 300 K. According to Raichev's theoretical model, by fixing a proper geometric distribution of source, island and drain, the transfer characteristics can be well explained through a combination of Coulomb blockade and field emission. Coulomb blockade and field emission alternately happen in our self-assembled devices. The Coulomb island size derived from the experimental data is in good agreement with the average size of the gold nanoparticles used in the device. The integrated tunneling can be adjusted via a gate electrode. [ABSTRACT FROM AUTHOR]

2D transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light-matter interactions. To fully explore their potential in photoconductive detectors, high responsivity is required. Here, high responsivity phototransistors based on few-layer rhenium disulfide (ReS2) are presented. Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88 600 A W−1, which is a record value compared to other individual 2D materials with similar device structures and two orders of magnitude higher than that of monolayer MoS2. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few-layer ReS2 flakes. It further enables the detection of weak signals, as successfully demonstrated with weak light sources including a lighter and limited fluorescent lighting. Our studies underscore ReS2 as a promising material for future sensitive optoelectronic applications. [ABSTRACT FROM AUTHOR]

A novel method for dynamic measurement of deflections of the vertical (DOVs) by using the integration of inertial navigation system (INS) and global navigation satellite system (GNSS) has been proposed. Since the attitude errors of INS/GNSS integrated system are directly related to DOV, it is expected that DOV can be also estimated via the observation of INS/GNSS attitude errors. First, an attitude reference decoupled from DOV is constructed with the raw gyroscope data of the INS for INS/GNSS attitude error calculation. Then, DOV and various systematic errors including attitude reference error and inertial sensor errors are accurately modeled. The long-wavelength components of DOV are given by global gravity model, and the short-wavelength components are modeled as derivative second-order Gauss–Markov processes. Finally, DOV and systematic errors are simultaneously estimated by a Kalman smoother with the observation of INS/GNSS attitude error. A ship-borne survey campaign is conducted to validate the feasibility of the proposed method. Four sets of DOV data were obtained by two INS/GNSS integrated navigation systems along with two repeated survey lines. The experimental results show that the internal accuracy of the four sets of DOV data can reach better than 0.35″(1σ). When wavenumber correlation filter (WCF) algorithm is applied to the DOV data obtained by each system along the repeated lines, the DOV estimates from the two systems show good consistency, and the internal accuracy can be improved to about 0.2″(1σ). [ABSTRACT FROM AUTHOR]

In this paper, a novel two-axis differential resonant accelerometer based on graphene with transmission beams is presented. This accelerometer can not only reduce the cross sensitivity, but also overcome the influence of gravity, realizing fast and accurate measurement of the direction and magnitude of acceleration on the horizontal plane. The simulation results show that the critical buckling acceleration is 460 g, the linear range is 0–89 g, while the differential sensitivity is 50,919 Hz/g, which is generally higher than that of the resonant accelerometer reported previously. Thus, the accelerometer belongs to the ultra-high sensitivity accelerometer. In addition, increasing the length and tension of graphene can obviously increase the critical linear acceleration and critical buckling acceleration with the decreasing sensitivity of the accelerometer. Additionally, the size change of the force transfer structure can significantly affect the detection performance. As the etching accuracy reaches the order of 100 nm, the critical buckling acceleration can reach up to 5 × 104 g, with a sensitivity of 250 Hz/g. To sum up, a feasible design of a biaxial graphene resonant accelerometer is proposed in this work, which provides a theoretical reference for the fabrication of a graphene accelerometer with high precision and stability. [ABSTRACT FROM AUTHOR]

Graphene absorbers have attracted lots of interest in recent years. They provide huge potential for applications such as photodetectors, modulators, and thermal emitters. In this letter, we design a high-quality (Q) factor resonant graphene absorber based on the phase change material Sb2S3. In the proposed structure, a refractive index grating is formed at the subwavelength scale due to the periodical distributions of amorphous and crystalline states, and the structure is intrinsically flat. The numerical simulation shows that nearly 100% absorption can be achieved at the wavelength of 1550 nm, and the Q factor is more than hundreds due to the loss-less value of Sb2S3 in the near-infrared region. The absorption spectra can be engineered by changing the crystallization fraction of the Sb2S3 as well as by varying the duty cycle of the grating, which can be employed not only to switch the resonant wavelength but also to achieve resonances with higher Q factors. This provides a promising method for realizing integrated graphene optoelectronic devices with the desired functionalities. [ABSTRACT FROM AUTHOR]

Abstract: We present our study on elastic constants and electronic structures of two-dimensional monolayer MoS2 under elastic strain using the first-principles calculations. The in-plane stiffness and Poissonʼs ratio calculated in the harmonic elastic strain range are found to be 123 N/m and 0.25, indicating that monolayer MoS2 is much softer than graphene. With the uniform strain applied, it is shown that the band gap of monolayer MoS2 undergoes a descent trend as strain increasing. Simultaneously, it is accompanied by two characteristic transitions, namely, direct-to-indirect transition at strain of 0.01 and semiconductor-to-metal transition at strain of 0.10. Furthermore, the effective mass of carriers is also modulated by the applied strain. [Copyright &y& Elsevier]

Abstract: We have demonstrated a high performance piezoelectric nanogenerator by scanning a diamond-coated conductive tip on ZnO nanorod arrays in an AFM system with contact-mode. About 95% ZnO nanorods generate piezoelectric current due to the excellent mechanical and electrical properties of the tip. The tip''s nitrogen-doped diamond coating is the key factor to maintain effective physical contact and electrical contact to ZnO nanorods, leading to efficient piezoelectric generation. Rectifying n+–n heterojunction is formed when the nitrogen-doped diamond tip contacted with a ZnO nanorod, which plays an important role in accumulating and releasing piezoelectric charges of the piezoelectric nanogenerator. Our research indicates that conductive diamond film is an ideal electrode for this type of piezoelectric nanogenerator. [Copyright &y& Elsevier]

The coupling strength between two-dimensional (2D) materials and substrate plays a vital role on thermal transport properties of 2D materials. Here we systematically investigate the influence of vacuum thermal annealing on the temperature-dependence of in-plane Raman phonon modes in monolayer graphene supported on silicon dioxide substrate via Raman spectroscopy. Intriguingly, raising the thermal annealing temperature can significantly enlarge the temperature coefficient of supported monolayer graphene. The derived temperature coefficient of G band remains mostly unchanged with thermal annealing temperature below 473 K, while it increases from −0.030 cm−1/K to −0.0602 cm−1/K with thermal annealing temperature ranging from 473 K to 773 K, suggesting the great impact of thermal annealing on thermal transport in supported monolayer graphene. Such an impact might reveal the vital role of coupling strength on phonon scattering and on the thermal transport property of supported monolayer graphene. To further interpret the thermal annealing mechanism, the compressive stress in supported monolayer graphene, which is closely related to coupling strength and is studied through the temperature-dependent Raman spectra. It is found that the variation tendency for compressive stress induced by thermal annealing is the same as that for temperature coefficient, implying the intense connection between compressive stress and thermal transport. Actually, 773 K thermal annealing can result in 2.02 GPa compressive stress on supported monolayer graphene due to the lattice mismatch of graphene and substrate. This study proposes thermal annealing as a feasible path to modulate the thermal transport in supported graphene and to design future graphene-based devices. [ABSTRACT FROM AUTHOR]

Abstract: The electrical characteristics of Pt Schottky contact to ZnO nanorod were studied with atomic force microscopy. A Pt tip was placed on the top end of a ZnO nanorod, forming a Pt/ZnO Schottky nano-junction. An ideality factor of 3.1 was derived from the current–voltage characteristics curve of the junction. As an application of the Schottky nano-contact, piezoelectric generation of the ZnO nanorod was carried out with atomic force microscopy. The rectifying effect of Pt/ZnO nano-contact on accumulating and releasing piezoelectric current for the nanogenerator was analyzed. [ABSTRACT FROM AUTHOR]

The fused silica cylindrical resonator is a type of axisymmetric resonator that can be used for Coriolis vibratory gyroscopes. Although the resonant frequency, frequency mismatch, and Q factor are natural properties of the resonator, they can change with temperature. Therefore, the temperature drift severely limits the detection accuracy and bias stability of the gyroscope. In this paper, the influence of temperature variation on the vibrational characteristics of fused silica cylindrical resonators was investigated. Experiments were performed on a fused silica cylindrical resonator coated with Cr/Au films. It was shown that at the temperature range from 253.15 K to 353.15 K, the resonant frequency linearly increased with temperature, the frequency mismatch remained unchanged, and the Q factor gradually increased till about 333.15 K, when it began to decrease. Meanwhile, the change of thermoelastic damping with temperature may dominate the variation of Q factor at the temperature range from 253.15 K to 353.15 K. This phenomenon was theoretically analyzed and the variation trends of results were consistent with the theoretical analysis. This study indicates that, for the fused silica cylindrical resonator, to discover the influence of temperature variation on the resonant frequency, frequency mismatch, and Q factor, there are certain rules to follow and repeat. The relationship between temperature and frequency can be established, which provides the feasibility of using self-calibration based on temperature characteristics of the resonator for temperature drift compensations. Additionally, there is an optimum temperature that may improve the performance of the Coriolis vibratory gyroscope with the fused silica cylindrical resonator. [ABSTRACT FROM AUTHOR]

The Coriolis Vibratory Gyroscopes are a type of sensors that measure angular velocities through the Coriolis effect. The resonator is the critical component of the CVGs, the vibrational characteristics of which, including the resonant frequency, frequency mismatch, Q factor, and Q factor asymmetry, have a great influence on the performance of CVG. The frequency mismatch and Q factor of the resonator, in particular, directly determine the precision and drift characteristics of the gyroscope. Although the frequency mismatch and Q factor are natural properties of the resonator, they can change with external conditions, such as temperature, pressure, and external forces. In this paper, the influence of electrostatic forces on the vibrational characteristics of the fused silica cylindrical resonator is investigated. Experiments were performed on a fused silica cylindrical resonator coated with Cr/Au films. It was shown that the resonant frequency, frequency mismatch, and the decay time slightly decreased with electrostatic forces, while the decay time split increased. Lower capacitive gaps and larger applied voltages resulted in lower frequency mismatch and lower decay time. This phenomenon was theoretically analyzed, and the variation trends of results were consistent with the theoretical analysis. This study indicates that, for fused silica cylindrical resonator with electrostatic transduction, the electrostatic influence on the Q factor and frequency, although small, should be considered when designing the capacitive gap and choosing bias voltages. [ABSTRACT FROM AUTHOR]

This work reports the interlayer difference of exciton and phonon performance between the top and bottom layer of a bilayer-stacked two-dimensional materials structure (BSS). Through photoluminescence (PL) and Raman spectroscopy, we find that, compared to that of the bottom layer, the top layer of BSS demonstrates PL redshift, Raman E 2 g 1 mode redshift, and lower PL intensity. Spatial inhomogeneity of PL and Raman are also observed in the BSS. Based on theoretical analysis, these exotic effects can be attributed to substrate-coupling-induced strain and doping. Our findings provide pertinent insight into film–substrate interaction, and are of great significance to researches on bilayer-stacked structures including twisted bilayer structure, Van der Waals hetero- and homo-structure. [ABSTRACT FROM AUTHOR]

Graphene has unique properties which make it an ideal material for photonic and optoelectronic devices. However, the low light absorption in monolayer graphene seriously limits its practical applications. In order to greatly enhance the light absorption of graphene, many graphene-based structures have been developed to achieve perfect absorption of incident waves. In this review, we discuss and analyze various types of graphene-based perfect absorption structures in the visible to terahertz band. In particular, we review recent advances and optoelectronic applications of such structures. Indeed, the graphene-based perfect absorption structures offer the promise of solving the key problem which limits the applications of graphene in practical optoelectronic devices. [ABSTRACT FROM AUTHOR]

Broadband optical absorption structures in the near infrared by coupling monolayer-graphene with periodical metal structures are proposed and demonstrated numerically. Optical absorption of graphene with over-50%-absorption bandwidth up to hundreds of nanometer caused by magnetic dipole resonances and magnetic coupling effect are investigated in detail, and the demonstrated bandwidths are one order higher than those caused by dielectric guiding mode resonances. In addition, the influences of geometrical parameters of structures are fully analyzed and these demonstrated structures show angular-insensitive absorption for oblique incidence in a large angular range. The demonstrated absorption structures in this work provide new design ideas in the realization of advanced graphene-based optoelectronic devices. [ABSTRACT FROM AUTHOR]

Graphene plasmons are rapidly emerging as a versatile platform for manipulating light at the deep subwavelength scale. Here we show numerically that strong optical near-field forces can be generated under the illumination of mid-IR light when dielectric nanoparticles are located in the vicinity of a nanostructured graphene film. These near-field forces are attributed to the excitation of the graphene's plasmonic mode. The optical forces can generate an efficient optical trapping potential for a 10-nm-diameter dielectric particle when the light intensity is only about about 4.4 mW/μm2 and provide possibilities for a new type of plasmonic nano-tweezers. Graphene plasmonic tweezers can be potentially exploited for optical manipulation of nanometric biomolecules and particles. Moreover, the optical trapping/tweezing can be combined with biosensing and provide a versatile platform for studing biology and chemistry with mid-IR light. [ABSTRACT FROM AUTHOR]

A so called all-carbon based graphene field effect transistor (GFET) in which the electrodes are composed of graphite-like nano-sheets instead of metals in the traditional devices is fabricated by one-step e-beam direct writing (EBDW). It is also found that the graphite-like nano-sheets in electrodes are perpendicular to the channel graphene, which is confirmed by the transmission electron microscopy (HRTEM). The one-step fabrication of the carbonaceous electrodes is more convenient and lower-cost comparing to the preparation of traditional metal electrodes and can be applied to many other nano-electronic devices. [ABSTRACT FROM AUTHOR]