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Rose-petal-like superhydrophobic surfaces with strong water adhesion are promising for microdroplet manipulation and lossless droplet transfer. Assembly of self-grown micropillars on shape-memory polymer sheets with their surface adhesion finely tunable was enabled using a picosecond laser microprocessing system in a simple, fast, and large-scale manner. The processing speed of the wettability-finely-tunable superhydrophobic surfaces is up to 0.5 cm

As a key component of next-generation photovoltaic technology, quantum well solar cells (QWSCs) have received great attention in the past few years. The growth characteristics and structure of III/V materials also provide a new choice for QWSCs. In this paper, a novel multi-quantum well solar cell is proposed, in which InGaAs/InGaAsP quantum wells (QWs) are inserted in the intrinsic region of the PIN structure, and the thickness, number and position of the QWs are optimized. Compared with ordinary solar cells, the short-circuit current (Jsc ) increased from 30.25mA/cm2 to 42.65mA/cm2, and the cell efficiency increased to 27.4%. Then, after adding an anti-reflection layer (ARC) on top of the QWSCs, Jsc has increased another 7mA/cm2 on average on the basis of previous one. It is clear that InGaAs/InGaAsP QWSCs absorb more incident sunlight. Furthermore, the influence on Jsc of the different position of QWs in the intrinsic region is also discussed. The results show that placing the QWs on top of the intrinsic region maximizes the efficiency of the solar cell.

The photodetector with superlattice electron barrier has received great attention in the past few years. In this paper, a type of photodetector with superlattice structure is simulated. InGaAs/InAs superlattices are inserted into the intrinsic layer of the PIN structure, and the positions of the superlattices are optimized. After changing the position of the superlattice, the dark current was reduced from 6.42 × 10−5 A/cm2 to 3.02 × 10−5 A/cm2. The results show that placing the superlattice on top of the intrinsic layer can minimize the dark current of the photodetector. Similarly, after changing the number of superlattice layers, the dark current is reduced from 6.42 × 10−5 A/cm2 to 1.55 × 10−5 A/cm2. In addition, the thickness of the superlattice was optimized, and the dark current was reduced from 6.42 × 10−5 A/cm2 to 3.1 × 10−5 A/cm2.