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Enhancing local field intensity through light field compression is one of the core issues in surface plasmon-enhanced spectroscopy. The theoretical framework for the nanostructure composed of a tip and a substrate has predominantly relied on classical electromagnetic models, ignoring the electron tunneling effect. In this paper, we investigate the plasmonic near-field characteristics in the sub-nanometer cavity formed by the tip and the substrate using a quantum-corrected model. Additionally, we analyze the local electric field and Raman enhancement when hexagonal boron nitride (h-BN) monolayer is used as a decoupling layer for the nanocavity. The results indicate that classical electromagnetic theory fails to accurately describe the plasmonic electric field in smaller sub-nanometer gaps. When the gap is reduced to 0.32 nm, the quantum-corrected model shows that the local electric field in the sub-nanometer cavity is significantly reduced due to the tunneling current, aligning more closely with experimental results. Moreover, adding a high-barrier h-BN layer effectively prevents the occurrence of tunneling current, allowing for a strong local electric field even when the gap is less than 0.32 nm. The calculated maximum Raman enhancement reaches up to 15 orders of magnitude. Our research results provide a deep understanding of quantum mechanical effects in tip-enhanced spectroscopy systems, enabling the potential applications based on quantum plasmons in nanocavity.