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142 results on '"Qasaimeh, Omar"'

6. Analytical Modeling of Epsilon-Near-Zero Effect in Indium Tin Oxide and Its Application as an Optical Modulator

Author

Qasaimeh, Omar

Abstract

We present a theoretical model for the complex optical conductivity of a structure consisting of indium tin oxide (ITO) and hafnium oxide (HfO2). The model includes an analytical derivation of the electrostatic potential, electron concentration, and complex relative permittivity of the ITO thin film, which is then compared with a numerical model. Excellent agreement is observed between the analytical model and the numerical data, demonstrating its simplicity, accuracy, and ease of use for evaluating optical conductivity and designing ITO-based optical modulators. Exploiting plasma dispersion effect of ITO nanostructures, we have developed a novel vertical-cavity optical modulator. The modulator consists of ITO thin films and HfO2 dielectric layers positioned between two distributed Bragg reflectors (DBRs) mirrors. By utilizing the tunable property of the ultrathin layer at the ITO–dielectric interface, the modulator exhibits efficient optical modulation capabilities.

Published
2024
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18. Novel closed-form model for multiple-state quantum-dot semiconductor optical amplifiers

Author

Qasaimeh, Omar

Subjects
Photonics -- Research, Quantum electronics -- Research, Semiconductor device, Business, Computers, Electronics, Electronics and electrical industries
Abstract

The derivation of a novel closed form model for multiple-state quantum-dot semiconductor optical amplifiers (QD-SOAs) is discussed. Results suggest the simplicity and accuracy of the proposed model.

Published
2008

21. Simple model for quantum-dot semiconductor optical amplifiers using artificial neural networks

Author

Ababneh, Jehad I. and Qasaimeh, Omar

Subjects
Neural networks -- Analysis, Image intensifiers -- Design and construction, Light amplifiers -- Design and construction, Neural network, Business, Electronics, Electronics and electrical industries
Abstract

A simple, accurate and fast multilayer feedforward artificial neural network (ANN) model is developed for quantum-dot semiconductor optical amplifiers (QD-SOAs). The developed model has demonstrated excellent precisions and is used to create very interesting design curves for QD-SOAs.

Published
2006

22. Effect of inhomogeneous line broadening on gain and differential gain of quantum dot lasers

Author

Qasaimeh, Omar

Subjects
Semiconductor lasers -- Analysis, Semiconductor device, Business, Electronics, Electronics and electrical industries
Abstract

An analysis for the inhomogeneous line broadening and the optical gain, which are derived from size fluctuation distribution, are studied. The effects of this on quantum dot density are also studied in detail.

Published
2003

24. InP-based cylindrical microcavity light-emitting diodes

Author

Zhou, Weidong, Bhattacharya, Pallab, and Qasaimeh, Omar

Subjects
Light-emitting diodes -- Research, Quantum electronics -- Research, Business, Computers, Electronics, Electronics and electrical industries
Abstract

The properties of InP-based microcavity light emitting diodes were studied for the effects of lateral optical confinement.

Published
2001

25. Electroabsorption and electrooptic effect in SiGe-Si quantum wells: realization of low-voltage optical modulators

Author

Qasaimeh, Omar, Singh, Jasprit, and Bhattacharya, Pallab

Subjects
Quantum wells -- Research, Modulators (Electronics) -- Research, Electrooptics -- Research, Optoelectronics -- Research, Business, Computers, Electronics, Electronics and electrical industries
Abstract

The indirect band-to-band absorption coefficient and electrooptic effect in SiGe-Si quantum well optical modulators were computed. The effect of the quantum well shape and the dimensions on the optical properties of the optical modulator was also analyzed. The shift of the electron wavefunction created significant changes in the absorption coefficient, the refractive index, and the linear optic coefficient. These changes show that the novel amplitude and phase modulators can be realized in this material system.

Published
1997

26. A modified model of the light amplifying optical switch (LAOS)

Author

Zebda, Yousef and Qasaimeh, Omar

Subjects
Optoelectronics -- Research, Photoelectric devices -- Research, Light amplifiers -- Analysis, Diodes, Laser -- Usage, Business, Computers, Electronics, Electronics and electrical industries
Abstract

A model of the Light Amplifying Optical Switch (LAOS) based on a derived expression for the nonlinear current gain of the heterojunction phototransistor (HPT) provides input-output characteristics, static I-V curve and switching voltage. Study of I-V characteristics and the switching mechanism show that nonlinear current gain of the HPT and the early effect creates thyristor-like characteristics in LAOS.

Published
1995

27. A new physical model of the light amplifying optical switch (LAOS)

Author

Zebda, Yousef and Qasaimeh, Omar

Subjects
Junction transistors -- Research, Feedback (Electronics) -- Analysis, Electric currents -- Measurement, Business, Electronics, Electronics and electrical industries
Abstract

A new physical model based on the determination of feedback current in light amplifying optical switch (LAOS) and the currents in heterojunction phototransistors (HPTs) helps measure the static I-V curve of LAOS. Solutions to the continuity equation in the HPT yield values for electrical and optical feedback current values. Feedback coefficients, recombination currents, early effect and collector to base doping ratio affect the negative resistance region in the I-V curve.

Published
1994

28. Currents and current gain analysis of passivated heterojunction bipolar transistors (HBT)

Author

Zebda, Yousef and Qasaimeh, Omar

Subjects
Bipolar transistors -- Research, Electric currents -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

Examination of the influence of effective interface velocities on current gain and currents of passivated heterojunction bipolar transistors (HBT) shows that thermionic flux and effective interface velocities are determinants of the collector current and the space-charge region recombination current. The quasi-Fermi level discontinuity expression depends on the recombination current and the interface velocities. The expression for the current gain of the HBT agrees well with previously derived experimental values.

Published
1994

29. Evolutionary design process ponders optoelectronic eye; tunnel junction and vertical integration of phototransceiver provide alternative to CCDS for mass-producible, monolithically integrated image sensors. (Detector Arrays)

Author

Bhattacharya, Pallab, Zhou, Weidong, Qasaimeh, Omar, and Pradhan, Sameer

Subjects
Business, Electronics and electrical industries
Abstract

Image sensors for many high-performance applications are based on high-performance--but relatively expensive--charge-coupled devices (CCDs). Moreover, a primary cost factor in CCD-based sensors is the incompatibility between CCD technology and current [...]

Published
2002

34. Saturated Gain of Doped Multilayer Quantum Dot Semiconductor Optical Amplifiers

Author

Qasaimeh, Omar

Subjects
multilayer, quantum dot optical amplifier, doping, saturated gain
Abstract

The effect of the number of quantum dot (QD) layers on the saturated gain of doped QD semiconductor optical amplifiers (SOAs) has been studied using multi-population coupled rate equations. The developed model takes into account the effect of carrier coupling between adjacent layers. It has been found that increasing the number of QD layers (K) increases the unsaturated optical gain for K, {"references":["Li Jiang and Levon V. Asryan,\" Excited-State-Mediated Capture of\nCarriers Into the Ground State and the Saturation of Optical Power in\nQuantum-Dot Lasers,\" IEEE Photonics Tech. Lett., vol. 18, no. 24, pp.\n2611-2613, 2006.","H. C. Wong, G. B. Ren, and J. M. Rorison, \"The Constraints on\nQuantum-Dot Semiconductor Optical Amplifiers for Multichannel\nAmplification, \"IEEE Photonics Tech. Lett., vol. 18, no. 20, pp. 2075-\n2077, 2006.","Jungho Kim and Shun Lien Chuang, \"Theoretical and Experimental\nStudy of Optical Gain, Refractive Index Change, and Linewidth\nEnhancement Factor of p-Doped Quantum-Dot Lasers,\" IEEE J.\nQuantum Electron, vol. 42, no. 9, pp. 942-952, 2006.","S. Schneider, P. Borri, W. Langbein, U. Woggon, R. Sellin, D. Ouyang,\nD. Bimberg, \"Excited-state gain dynamics in InGaAs quantum-dot\namplifiers\", IEEE Photonics Tech. Lett., vol. 17, no. 10, pp. 2014-\n2016, 2005.","A. Salhi, L. Martiradonna, G. Visimberga, V. Tasco, L. Fortunato, M. T.\nTodaro, R. Cingolani, A. Passaseo, and M. De Vittorio,\" High-Modal\nGain 1300-nm In(Ga)As-GaAs Quantum-Dot Lasers,\" IEEE Photonics\nTech. Lett., vol. 18, no. 16, pp. 1735-1737, 2006.","T. Akiyama, H. Kuwatsuka, N. Hatori, Y. Nakata, H. Ebe and M.\nSugawara,\" Symmetric highly efficient (~0 dB) wavelength conversion\nbased on four-wave mixing in quantum dot optical amplifiers,\" IEEE\nPhotonics Tech. Lett., vol. 14, no. 8, pp. 1139-1141, 2002.","M. Van der Poel, E. Gehrig, O. Hess, D. Birkedal, J. Hvam, \"Ultrafast\nGain Dynamics in Quantum-Dot Amplifiers: Theoretical Analysis and\nExperimental Investigations\" IEEE J. Quantum Electron, vol. 41, no. 9,\npp. 1115-1123, 2005.","O. Qasaimeh, \"Ultra-Fast Gain Recovery and Compression Due to\nAuger-Assisted Relaxation in Quantum Dot Semiconductor Optical\nAmplifiers\" IEEE J. Lightwave Technology, vol. 27, no. 13, pp. 2530-\n2536, 2009.","Ryan R. Alexander, David T. D. Childs, Harsh Agarwal, Kristian M.\nGroom, Hui-Yun Liu, Mark Hopkinson, Richard A. Hogg, Mitsuru\nIshida, Tsuyoshi Yamamoto, Mitsuru Sugawara, Yasuhiko Arakawa,\nTom J. Badcock, Richard J. Royce, and David J. Mowbray, \"Systematic\nStudy of the Effects of Modulation p-Doping on 1.3-╬╝m Quantum-Dot\nLasers,\" IEEE J. Quantum Electron, vol. 43, no. 12, pp. 1129-1139,\n2007.\n[10] T. Chen, Y. F. Chen, J. S. Wang, Y. S. Huang, R. S. Hsiao, J. F. Chen,\nC. M. Lai and J. Y. Chi,\" Wire-like characteristics in stacked InAs/GaAs\nquantum dot superlattices for optoelectronic devices,\" Semicond. Sci.\nTechnol. vol. 22, pp. 1077-1080, 2007.\n[11] Omar Qasaimeh,\" Effect of Doping on the Optical Characteristics of\nQuantum Dot Semiconductor Optical Amplifiers\" IEEE J. Lightwave\nTech, vol. 27, no. 12, pp.1978-1984, 2009.\n[12] T. Amano, S. Aoki, T. Sugaya, Kazuhiro Komori, and Y. Okada, \"Laser\nCharacteristics of 1.3-╬╝m Quantum Dots Laser With High-Density\nQuantum Dots,\" IEEE J. Of Selected Topics in Quantum Electrons, vol.\n13, no. 5, pp. 1273-1278, 2007.\n[13] Jyh-Shyang Wang, Ru-Shang Hsiao, Jenn-Fang Chen, Chu-Shou Yang,\nGray Lin, Chiu-Yueh Liang, Chih-Ming Lai, Hui-Yu Liu, Tung-Wei\nChi, and Jim-Y. Chi,\" Engineering Laser Gain Spectrum Using\nElectronic Vertically Coupled InAs-GaAs Quantum Dots,\" IEEE\nPhotonics Tech. Lett., vol. 17, no. 8, pp. 1590-1592, 2005.\n[14] O. Qasaimeh, \"Vertical Coupling in Multiple Stacks Quantum Dot\nSemiconductor Optical Amplifiers\" Journal of Physics D: Applied\nScience, vol. 42, pp. 234001, 2009.\n[15] Ian. C. Sandall, Peter M. Smowton, Hui-Yun Liu, and Mark\nHopkinson,\" Nonradiative Recombination in Multiple Layer In(Ga)As\nQuantum-Dot Lasers,\" IEEE J. Quantum Electron, vol. 43, no. 8, pp.\n698-703, 2007.\n[16] C. L. Walker, I. C. Sandall, P. M. Smowton, I. R. Sellers, D. J.\nMowbray, H. Y. Liu, and M. Hopkinson,\" The Role of High Growth\nTemperature GaAs Spacer Layers in 1.3-╬╝m In(Ga)As Quantum-Dot\nLasers,\" IEEE Photonics Tech. Lett., vol. 17, no. 10, pp. 2011-2013,\n2005."]}

Published
2011
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37. Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser

Author

Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, Laboratory for Electronic Properties of Materials, School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019-1023, Krishna, Sanjay, Qasaimeh, Omar, Bhattacharya, Pallab, McCann, Patrick J., Namjou, Khosrow, Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, Laboratory for Electronic Properties of Materials, School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019-1023, Krishna, Sanjay, Qasaimeh, Omar, Bhattacharya, Pallab, McCann, Patrick J., and Namjou, Khosrow

Abstract

Far-infrared spontaneous emission at 300 K and lower temperatures, due to intersubband transitions in self-organized In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs quantum dots, has been characterized. Measurements were made with a multidot layer near-infrared (∼1 μm) interband laser. The far-infrared signal, centered at 12 μm, was enhanced after the interband transition reached threshold at 300 K. The results are explained in terms of the carrier dynamics in the dots. © 2000 American Institute of Physics.

Published
2010

47. High-power tunable DBR lasers for digital communication systems

Author

Qasaimeh, Omar, primary, Ganikhanov, Ferous S., additional, Dean, E. J., additional, Yi, Jong, additional, Eng, Lars, additional, Juluri, R., additional, Stayt, Jr., J. W., additional, Broutin, S. L., additional, Johanson, J., additional, Bylsma, Richard B., additional, Ketelsen, Leonard J. P., additional, Johnson, John E., additional, Ackerman, David A., additional, Hybertsen, Mark S., additional, Roycroft, Scott, additional, Rao, G., additional, Pinnington, T., additional, and O'Cochlain, Ciaran R., additional

Published
2001
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48. High-power tunable DBR lasers for digital communication systems.

Author

Qasaimeh, Omar, Ganikhanov, Ferous S., Dean, E. J., Yi, Jong, Eng, Lars, Juluri, R., Stayt Jr., J. W., Broutin, S. L., Johanson, J., Bylsma, Richard B., Ketelsen, Leonard J. P., Johnson, John E., Ackerman, David A., Hybertsen, Mark S., Roycroft, Scott, Rao, G., Pinnington, T., and O'Cochlain, Ciaran R.

Published
2001
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