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6. Geometry and strain dependence of the proton radiation behavior of MuGFET devices

Author

Put, S., Simoen, E., Collaert, N., Claeys, C., Van Uffelen, M., and Leroux, P.

Subjects
Field-effect transistors -- Design and construction, Protons -- Properties, Gates (Electronics) -- Properties, Business, Electronics, Electronics and electrical industries
Abstract

The proton irradiation effects on n-MuGFET devices with three different geometries (single fin, wide fin and multiple fin) are studied. Also, the effect of tensile strain in the fin on the radiation behavior is investigated. A fundamental difference in the radiation behavior between the non-strained and the strained devices is found. The degradation of the strained devices is most affected by the mobility decrease of the backside transistor. The non-strained devices show a much lesser back gate mobility degradation. For these devices the creation of positive oxide traps is dominant. This shifts the onset of the back channel to lower gate voltages, inducing a transconductance increase at intermediate gate voltages. This effect is less pronounced for single fin MuGFETs. At higher gate voltage, the transconductance decreases for the strained and increases for the non-strained transistors. Index Terms--Fully depleted, multiple gate transistors, proton irradiation effects, strain.

Published
2007

14. Reaction tubes: A new platform for silicon nanophotonic ring resonator sensors.

Author

Arce, C. Lerma, Van Put, S., Goes, A., Hallynck, E., Dubruel, P., Komorowska, K., and Bienstman, P.

Subjects
*BIOSENSORS, *SILICON detectors, *MICROFLUIDICS, *NANOPHOTONICS, *RESONATORS
Abstract

Label-free biosensing with silicon nanophotonic ring resonator sensors has proven to be an excellent sensing technique for achieving high throughput and high sensitivity, comparing favorably with other labeled and label-free sensing techniques. However, as in any biosensing platform, silicon nanophotonic ring resonator sensors require a fluidic component that allows the continuous delivery of the sample to the sensor surface. This is the big disadvantage of this platform since this type of microfluidic system is very much removed from the daily practice in, e.g., hospital labs, which still relies to a large degree on platforms like 96-well microtiter plates or reaction tubes. To address this major drawback, we propose the combination of a simple and lab-compatible reaction tube platform, with label-free nanophotonic biosensors with a special microfluidic system imbedded into the same chip, where the flow is through the chip rather than over the chip as in more traditional approaches. This shows that label-free nanophotonic ring resonators can be also used in the user-friendly platform like reaction tubes or well microtiter plates, conserving their excellent performance. [ABSTRACT FROM AUTHOR]

Published
2014
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16. Social protection and labour market policies for vulnerable groups from a social investment perspective. The case of people with a migration background in Belgium/Flanders (RE-InVEST working paper series D5.1)

Author

Debuyne, M. and Put, S.

Subjects
labour market policy, capabilities, social inclusion, social investment, social protection, social policy
Abstract

The European project RE-InVEST re-assesses the role of active labour market and social protection policy for integrating vulnerable groups from a social investment perspective that the EU endorsed as a response to the financial crisis. This Belgian national case study of RE-InVEST used peer research to investigate the nature and effect of relevant policies concerning unemployed persons with a migratory background. This report analyses the counselling services in Flanders, where two services have the task to reintegrate unem­ployed people. The main research question is the quality of the counselling and the possible differences between the counselling services. Lessons can be learned from these analyses. The qualitative research addresses the question if the counselling comply with the social investment perspective from a human rights and capability approach. We detected that the counselling has negative consequences for the clients, espe­cially for people with a migratory background. It increases fatalism among people with a migratory back­ground. Those people tend to lose every hope for an opportunity to develop their talents or any hope for a life they have reason to value. The unilateral focus on the demand side and a lack of insight in the supply side has negative consequences on participation, agency and choice. Though activation is a goal, counselling is not guided by social investment in general.

Published
2017

17. Reliable filling of through vias with silver based conductive adhesives in flexible PEN substrates using low-cost optimized stencil printing methods

Author

Peter, M., Ende, D. van den, Remoortere, B. van, Put, S. van, Podprocky, T., Henckens, A., and Brand, J. van den

Subjects
Systems-in-foil, TS - Technical Sciences, Isotropic conductive adhesive (ICA), Through via, Industrial Innovation, FE modeling, Vision Materials, Interconnection technology, HOL - Holst, Mechatronics, Mechanics & Materials
Abstract

Systems-in-foil technologies address the current need to manufacture low-cost, low-complexity and high-reliabiltiy large area organic electronics in the field of OLEDs, OPVs and sensors. For substrates with multiple layers of conductive tracks, there is a need to realize contact positions on either side of the foil. Unfortunately, typical interconnection solutions such as electroplating used in the PCB industry, are not highly compatible with large area electronics processing technologies, such as roll-to-roll processing. In this paper, the authors present results on the development of a reliable front-to-backside interconnection technology by filling laser drilled through vias (TVs) in PEN foil with a silver-based conductive adhesive using optimized stencil printing methods. Typical initial resistances for 100 μm TVs are situated in a range of 0.4 to 0.5 and TVs in a range of 0.15 to 0.35 for 200 μm, respectively. Samples were subjected to various accelerated life time tests; 1,000 hours at 60̊C/90%RH, 1,000 hours at 85̊C/85% RH, 1,000 cycles at -40̊C/120̊C and 15,000 bending cycles using cylinders with 10 mm and 25 mm bending radius. Only the bending stress resulted in an increase in via resistance. Stress during bending was simulated using FE modeling and maximum stress positions were compared to SEM cross sections of the vias. To emphasize the robustness of this interconnection technology, a flexible demonstrator was successfully fabricated consisting of a 10 by 10 grid of LEDs on the front side, connected to photo diodes on the backside of the foil using 200 μm TVs for interconnection. © 2013 IMAPS.

Published
2013

18. High-temperature characterization of advanced strained nMuGFETs

Author

Talmat, Rachida, Put, S., Collaert, N., Mercha, A., Claeys, C., Guo, Wei, Equipe Electronique - Laboratoire GREYC - UMR6072, Groupe de Recherche en Informatique, Image et Instrumentation de Caen (GREYC), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU), GRMNT,Mouloud Mammeri University of Tizi-Ouzou, Algeria, University of Tizi-Ouzou, IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), E.E. Dept - KU Leuven, Kasteelpark Arenberg - Belgium, and Centre d'Etude de l'Energie Nucléaire (SCK-CEN)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience; DC measurements at high temperature of n-channel triple-gate transistors with 25 nm fin-width and 65 nm fin-height, high-k dielectric and metal gate for strained and unstrained substrates are investigated. The variations of the main transistor parameters with temperature are analyzed from room temperature up to 200°C.

Published
2010

20. A Novel Concept for Advanced Modules with Back-Contact Solar Cells

Author

Govaerts, J., Robbelein, J., Gong, C., Pawlak, B.J., Gonzalez, M., De Wolf, I., Bossuyt, F., Van Put, S., Gordon, I., Vanfleteren, J., Beaucarne, G., Van Der Heide, A., Dewallef, S., and Baert, K.

Subjects
PV Modules, Components for PV Systems
Abstract

25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 3850-3853, Imec has developed a new technology concept to integrate and interconnect back-contact solar cells into modules, based on embedding cells in silicone on top of a glass substrate. This so-called i-module (interconnect module) technology aims at an improved optical performance and reliability, combined with an increased throughput for module manufacturing, through the use of silicones and a module-level interconnection that eliminates string handling. One of the additional advantages is that the technology could therefore be suitable for integrating very thin cells into modules. The paper will first elaborate on the process flow, its background and motivation. A lot of options are still open for consideration, but technical feasibility is demonstrated for two distinct implementations. Materials and processing are discussed for these cases, as well as the resulting module measurements. Then the methodology behind the followed reliability approach is discussed on a general level and some first results on accelerated reliability testing and outdoor weathering are shown. Finally, a view on future developments is given as an outlook.

Published
2010
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27. High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs

Author

UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, IMEC, UCL - SST/CRC - Centre de ressources du cyclotron, Kilchytska, Valeriya, Alvarado, Jose Joaquin, Put, S., Collaert, N., Simoen, E., Claeys, C., Militaru, Otilia, Berger, Guy, Flandre, Denis, UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, IMEC, UCL - SST/CRC - Centre de ressources du cyclotron, Kilchytska, Valeriya, Alvarado, Jose Joaquin, Put, S., Collaert, N., Simoen, E., Claeys, C., Militaru, Otilia, Berger, Guy, and Flandre, Denis

Abstract

A comparative investigation of high-energy neutrons effect on strained and non-strained devices with different geometries is presented. Both single-gate planar and multiple-gate (MuG) silicon-on-insulator (SOI) devices are considered. Device response to the neutron irradiation is assessed through the variations of threshold voltage and transconductance maximum. The difference between strained and non-strained device response to the high-energy neutrons exposure is clearly evidenced. The reasons for such a difference are discussed. Analysis of the experimental results allows for suggesting that strain relaxation is one of the probable causes.

Published
2012

28. Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs

Author

UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, IMEC, Kilchytska, Valeriya, Alvarado, Joaquin, Collaert, N., Rooyackers, R., Put, S., Simoen, E., Claeys, C., Flandre, Denis, UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, IMEC, Kilchytska, Valeriya, Alvarado, Joaquin, Collaert, N., Rooyackers, R., Put, S., Simoen, E., Claeys, C., and Flandre, Denis

Abstract

This paper analyzes the influence of negative charges (NC) located at the gate edges on the advanced MOSFETs behavior, paying particular attention to the subthreshold slope, S, maximum transconductance, Gmmax, and analog figures of merit, such as transconductance over drain current ratio, Gm/ID, output conductance, GD, Early voltage, VEA, and intrinsic gain. General trends obtained by two-dimensional numerical simulations on double-gate (DG) structures are whenever possible qualitatively correlated with experimental data obtained on FinFETs. We show that the presence of negative charges at the gate edges while degrading the subthreshold behavior and analog figures of merit (especially for long-channel devices) can result in apparent improved control of short-channel effects and higher Gmmax. The origin of such twofold impact of negative charges at the gate edges on the device behavior is also analyzed by 2-D device simulations and a simplified two-transistors model.

Published
2011

29. Study of neutron irradiation effects on SOI and strained SOI MuGFETs assessed by low-frequency noise

Author

IMEC, UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Simoen, E., Put, S., Claeys, C., Kilchytska, Valeriya, Alvarado Pulido, José Joaquin, Flandre, Denis, IMEC, UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Simoen, E., Put, S., Claeys, C., Kilchytska, Valeriya, Alvarado Pulido, José Joaquin, and Flandre, Denis

Abstract

A comparison study is made on the high-energy neutron irradiation response of MuGFETs fabricated on Silicon-on-Insulator (SOI) and strained SOI (sSOI) substrates. Both DC and low-frequency noise characteristics have been obtained in linear operation. It is shown that while a pronounced device-to-device variation can be noted, there is no clear impact of the strain on the radiation behavior.

Published
2010

30. Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs

Author

UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Kilchytska, Valeriya, Alvarado Pulido, José Joaquin, Collaert, N., Rooyakers, R., Put, S., Claeys, C., Flandre, Denis, Sixth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2010), UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Kilchytska, Valeriya, Alvarado Pulido, José Joaquin, Collaert, N., Rooyakers, R., Put, S., Claeys, C., Flandre, Denis, and Sixth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2010)

Abstract

n/a

Published
2010

31. High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs

Author

UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Kilchytska, Valeriya, Alvarado Pulido, José Joaquin, Put, S., Collaert, N., Simoen, E., Claeys, C., Militaru, Otilia, Berger, Guy, Flandre, Denis, 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010), UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Kilchytska, Valeriya, Alvarado Pulido, José Joaquin, Put, S., Collaert, N., Simoen, E., Claeys, C., Militaru, Otilia, Berger, Guy, Flandre, Denis, and 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010)

Abstract

A comparative investigation of high-energy neutrons effect on strained and non-strained devices with different geometries is presented. Both single-gate planar and multiple-gate (MuG) silicon-on-insulator (SOI) devices are considered. Device response to the neutron irradiation is assessed through the variations of threshold voltage and transconductance maximum. The difference between strained and nonstrained device response to the high-energy neutrons exposure is clearly evidenced. The reasons for such a difference are discussed. Analysis of the experimental results allows for suggesting that strain relaxation is one of the probable causes.

Published
2010

37. Towards the best measured part of the Netherlands: GeoFort

Author

Briels, S., Put, S., Briels, S., and Put, S.

Abstract

GeoFort, het Fort bij de Nieuwe Steeg bij Leerdam, is een educatieve attractie in oprichting waar in de toekomst op speelse wijze kennis kan worden gemaakt met een wereld vol kaarten en navigatie. Het fort heeft in de loop van de tijd veranderingen ondergaan. Om deze veranderingen te onderzoeken zijn door de studenten 3 modellen van het fort gemaakt, waaronder een 3-dimensionaal model

Published
2007

50. The granular bed filter as a model of the lower parts of the human lung: Literature study

Author

van der Put, S. (author) and van der Put, S. (author)

Abstract

In this paper, the fiber deposition in the lower parts of the lung (8-23rd generation of Weibel) during inspiration is compared with the deposition of fibers in a granular bed filter with similar dimensions and equal air flow rate. It is found that very little experimental and theoretical research has been done on deposition of fibers in the deeper parts of the human lung. The model of Harris and Fraser (1976) is the only model that predicts regional deposition as a function of breathing conditions and fiber dimensions. This model however, has many shortcomings. Literature on fiber deposition in granular bed filters is scanty as well. For that reason the model of Boulaud (1991) for deposition of spherical aerosol particles in a granular bed filter has been modified in this paper to make a rough estimate of fiber deposition in this type of filters. Geometry of the lung, fluid dynamics and deposition probabilities have been compared in both systems with the help of the model of Harris and Fraser and the model of Boulaud. It is succeeded to translate the Weibel model for geometry of the human lung into a trumpet-like granular bed filter with varying granule size in which the dimensions of the air spaces and the air velocity in a layer are similar to those in an airway generation. As shape and dimensions of the voids in the granular bed filter differ from those in the respiratory system, differences in air flow patterns between both systems will exist, that will have their effect on deposition. Efficiencies depend on the same dimensionless numbers in both systems. Investigations in a granular bed filter will be useful to find out relationships between fiber dimensions and orientation, air velocity, residence time and geometrical dimensions of the air spaces on one hand and fiber deposition on the other hand. Results obtained with granular bed filters can be applicable to the deeper parts of the human lung when differences in geometry of the airspaces and in velocity pat, Applied Sciences, Chemical Engineering and Materials Science, Particle Technology

Published
1991

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