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7 results on '"Pupysheva, O. V."'

1. Green's Function Formulation of Electronic Transport at Nanoscale

Author

Farajian, A. A., Pupysheva, O. V., Yakobson, B. I., Kawazoe, Y., Kawazoe, Y., editor, Hasegawa, M., editor, Inoue, A., editor, Kobayashi, N., editor, Sakurai, T., editor, Wille, L., editor, Ohno, Kaoru, editor, Tanaka, Masatoshi, editor, Takeda, Jun, editor, and Kawazoe, Yoshiyuki, editor

Published
2008
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3. Transition between N- and Z-shaped current-voltage characteristics in semiconductor multiple-quantum-well structures.

Author

Pupysheva, O. V., Dmitriev, A. V., Farajian, A. A., Mizuseki, H., and Kawazoe, Y.

Subjects
*ELECTRON transport, *QUANTUM wells, *FREE electron theory of metals, *OPTICAL bistability, *ELECTROMAGNETIC fields, *ENERGY-band theory of solids
Abstract

We study theoretically the vertical electron transport in semiconductor multiple-quantum-well structures, where sequential tunneling between neighboring wells takes place. The nonuniformity of electric field along the growth axis and charge redistribution among the quantum wells, as well as between the inner wells and contacts, are taken into account. A simple and efficient model of charged contact layers is proposed. The calculated I-V curves exhibit regions of conventional N-shaped negative differential conductivity and Z-shaped portions of intrinsic bistability, both arising due to the tunneling resonances. A general explanation of their formation mechanism is given, which is valid for any form of interwell transitions of resonant nature. The conditions of N- and Z-shaped curve observation and controllable transition between them are discussed. [ABSTRACT FROM AUTHOR]

Published
2006
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5. Green's Function Formulation of Electronic Transport at Nanoscale.

Author

Hasegawa, M., Inoue, A., Kobayashi, N., Sakurai, T., Wille, L., Ohno, Kaoru, Tanaka, Masatoshi, Takeda, Jun, Kawazoe, Yoshiyuki, Farajian, A. A., Pupysheva, O. V., Yakobson, B. I., and Kawazoe, Y.

Abstract

Electronic transport is among the unique physical phenomena whose applications have shaped human civilization as we know it today. From old telegrams and light bulbs to modern televisions, mobile phones, laptops, and super-computers, all make use of electronic transport. In fact, nowadays we can hardly find any significant technological product in which electronic transport is not used one way or another. This enormous technological impact is a result of basic scientific research on electron tunneling and scattering, in different environments and including various levels of interactions and correlations. The basic research in the field of electronic transport is expected to yield equally unique, and even more important, fruits in future, as the challenges of this vibrant field are ever increasing. One of the main areas of interest which has been the focus of numerous scholarly works is electronic transport at nanometer length scales. The reason is that miniaturization of electronic components has caused the device dimensions to reach nanoscale. At nanoscale, the atomistic character of the systems can no longer be treated using rather rough models applicable at micrometer length scales. Therefore, fundamentally new approaches are necessary, in both theory and experiment, to deal with electronic transport at nanoscale. [ABSTRACT FROM AUTHOR]

Published
2008
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