1. Enhanced figure of merit in two-dimensional ZrNiSn nanosheets for thermoelectric applications.
- Author
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Monika, S, Suganya, G, Gokulsaswath, V, and Kalpana, G
- Subjects
- *
ELECTRONIC band structure , *SEEBECK coefficient , *FACE centered cubic structure , *NANOSTRUCTURED materials , *BAND gaps - Abstract
A novel two-dimensional (2D) half-Heusler ZrNiSn nanosheet for thermoelectric applications was designed from bulk half-Heusler ZrNiSn through first-principles calculation. Investigation of bulk half-Heusler and 2D nanosheet ZrNiSn was performed with the Quantum Espresso code based on a density functional theory plane wave basis set. Electronic band structure and density of states calculations were used to study the confinement effects. On moving from bulk to 2D a change of structure is observed from face-centered cubic to trigonal due to confinement effects. The semiconducting nature of bulk ZrNiSn is undisturbed while moving to a 2D nanosheet; however, the band gap is widened from 0.46 to 1.3 eV due to the restricted motion of electrons in one direction. Compared with bulk ZrNiSn, 2D nanosheets were found to have a higher Seebeck coefficient a lower thermal conductivity and higher figure of merit, which makes 2D ZrNiSn nanosheets suitable for thermoelectric applications. Atomically thin 2D structures with a flat surface have the potential to form van der Waals heterojunctions, paving the way for device fabrication at the nanoscale level. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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