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12 results on '"Przeslak, S. J. B."'

1. Single Lateral Mode Mid-Infrared Laser Diode using Sub-Wavelength Modulation of the Facet Reflectivity

Author

Nash, G. R., Stokes, J. L., Pugh, J. R., Przeslak, S. J. B., Heard, P. J., Rarity, J. G., and Cryan, M. J.

Subjects
Physics - Optics
Abstract

The characteristics of mid-infrared laser diodes have been investigated before and after the patterning of sub-wavelength metallic apertures on the emitting facet. Before modification of the facet the emitted spectrum consisted of a large number of peaks associated with different spatial modes, whereas afterwards the spectrum was dominated by a single peak. Simulations showed that the patterning of the facet caused the effective reflectivity to be different for each lateral mode, suggesting that the peak in the measured spectra is associated with the single lateral mode which is most strongly reflected from the modified facet., Comment: 12 pages, 3 figures

Published
2011
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4. Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K.

Author

Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T., Ashley, T., Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T., and Ashley, T.

Abstract

Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at similar to 3.3 mu m at 200 K for the 1.1% structure. ©2009 American Institute of Physics

Published
2009

5. Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

Author

Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T., Ashley, T., Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T., and Ashley, T.

Abstract

Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at similar to 3.3 mu m at 200K with 1.1% strain in the QW. (C)2009 Optical Society of America

Published
2009

6. GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.

Author

Yin, M., Nash, G. R., Coomber, S. D., Buckle, L., Carrington, P. J., Krier, A., Andreev, A., Przeslak, S. J. B., de Valicourt, G., Smith, S. J., Emeny, M. T., Ashley, T., Yin, M., Nash, G. R., Coomber, S. D., Buckle, L., Carrington, P. J., Krier, A., Andreev, A., Przeslak, S. J. B., de Valicourt, G., Smith, S. J., Emeny, M. T., and Ashley, T.

Abstract

Photoluminescence (PL) from GaInSb/AlInSb type I multi-quantum-wells, grown on GaAs, has been investigated as a function of strain in the quantum wells. Luminescence, between 3 and 4 mu m, was observed for all samples, with good agreement between the measured and calculated peak emission energies. Analysis of the temperature dependence of the luminescence suggests that population of excited quantum well hole subbands occurs at high temperature, leading to a reduction in the PL signal. Room temperature luminescence was obtained from a sample with similar to 0.8% strain in the quantum wells. Preliminary results from laser diodes fabricated from companion wafers indicate lasing up to 220 K. (C) 2008 American Institute of Physics.

Published
2008

7. Electroluminescence from InSb-based mid-infrared quantum well lasers.

Author

Murdin, B. N., Clowes, S. K., Smith, S. J., Przeslak, S. J. B., Nash, G. R., Storey, C. J., Andreev, A. D., Krier, A., Yin, M., Coomber, S. D., Buckle, L., Emeny, M. T., Ashley, T., Murdin, B. N., Clowes, S. K., Smith, S. J., Przeslak, S. J. B., Nash, G. R., Storey, C. J., Andreev, A. D., Krier, A., Yin, M., Coomber, S. D., Buckle, L., Emeny, M. T., and Ashley, T.

Published
2008

11. Mid-Infrared GaInSb/AlGaInSb Quantum Well Laser Diodes

Author

Nash, G. R., primary, Przeslak, S. J. B., additional, Smith, S. J., additional, de Valicourt, G., additional, Andreev, A. D., additional, Carrington, P. J., additional, Yin, M., additional, Krier, A., additional, Coomber, S. D., additional, Buckle, L., additional, Emeny, M. T., additional, and Ashley, T., additional

Published
2009
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12. GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers

Author

Yin, M., primary, Nash, G. R., additional, Coomber, S. D., additional, Buckle, L., additional, Carrington, P. J., additional, Krier, A., additional, Andreev, A., additional, Przeslak, S. J. B., additional, de Valicourt, G., additional, Smith, S. J., additional, Emeny, M. T., additional, and Ashley, T., additional

Published
2008
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