130 results on '"Protzmann, H."'
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2. Effect of the AIN nucleation layer growth on AlN material quality
3. Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor ®
4. Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors
5. Characterization of undoped and silicon-doped InGaN/GaN single quantum wells
6. Ternary Group-III-Nitrides Grown in Movpe Production Reactors
7. MOVPE production reactors for high temperature electronics
8. Metalorganic vapor phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH)
9. Uniformity Control of 3-Inch GaN/InGaN Layers Grown in Planetary Reactors®
10. Reproducibility and Uniformity of MOVPE Planetary Reactors® for the Growth of GaN Based Materials
11. Uniformity control of 3 inch GaN/InGaN layers grown in Planetary Reactors®
12. Uniformity control of group-III nitrides grown on 5×3 inch Al 2O 3 substrates inch Planetary Reactors ®
13. A novel reactor concept for multiwafer growth of III–V semiconductors
14. Eine Mänade des Skopas im Albertinum in Dresden
15. Die Antikensammlung im Albertinum zu Dresden
16. Reactive ion etching of GaN : results and morphology
17. Algorithm for reconstructing lost samples from oversampled signals
18. Planetary Production Type MOCVD Reactors for Blue Laser Applications in the GaTnN Material System
19. Светоизлучающие структуры и лазеры на основе GaN
20. High‐temperature growth of AlN in a production scale 11 × 2′ MOVPE reactor
21. GaN Uniformity Control on Multiple 3 Inch Wafer Grown in Planetary Reactors
22. High etch rate and smooth morphology using a novel chemistry in reactive ion etching of GaN
23. InP Based Materials for Long Wavelength Optoelectronics Grown in Multiwafer Planetary Reactors
24. Progress in reactive ion etching of epitaxial GaN
25. Growth, Stimulated Emission, Photo‐ and Electroluminescence of InGaN/GaN EL‐Test Heterostructures
26. Multiple Quantum Well InGaN/GaN Blue Optically Pumped Lasers Operating in the Spectral Range of 450-470 nm
27. Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm
28. Group-III nitride growth in production scale MOVPE systems
29. PRODUCTION TYPE PLANETARY® MOVPE REACTORS FOR FABRICATION OF NITRIDE QUANTUM WELL LASERS
30. ENERGY TRANSFER AND LASINQ IN InGaN/GaN MULTIPLE QUANTUM WELL HETEROSTRUCTURES
31. Uniformity control of group-III nitrides grown on 5×3 inch Al2O3 substrates inch Planetary Reactors®
32. Stimulated Emission, Electro- and Photoluminescence of InGaN/GaN EL-Test and SQW Heterostructures Grown by MOVPE
33. Indium nanowires in thick (InGaN) layers as determined by x-ray analysis
34. Band Fillling and Energy Relaxation in InGaN/GaN-Multiple Quantum Well Structures
35. Characterization of InGaN Single Layers and Quantum Wells Grown by LP-MOVPE
36. In Situ Monitoring of GaN Growth in Multiwafer MOVPE Reactors
37. Influence of UV Light-Assisted Annealing on Optical Properties of InGaN/GaN Heterostructures Grown by MOVPE
38. Structural and Optical Analysis of (In,Ga)N Structures Grown by MOCVD
39. Interface Treatment of GaN/InGaN-Multi Quantum Well Structures Grown in Production Type MOVPE Systems
40. High-Temperature Lasing in InGaN/GaN Multiquantum Well Heterostructures
41. GaInN/GaN heterostructures grown in production scale MOVPE reactors
42. Evaluation of strain and In content in (InGaN/GaN) multiquantum wells by x-ray analysis
43. Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane
44. Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors
45. Amino-arsine and -phosphine compounds for the MOVPE of III–V semiconductors
46. New alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III–V semiconductors: in-situ formation of AsH functionality by β elimination of specific metal-organic arsenic compounds
47. New group III aluminium and gallium hydride precursors for metal-organic vapour-phase epitaxy
48. In-situ formation of As-H functions by β-elimination of specific metalorganic arsenic compounds for the MOVPE of III/V semiconductors
49. Properties of (GaIn)As and InP bulk epitaxial layers. (GaIn)As/InP-heterostructures and pin-detector device structures grown by using the alternative sources ditertiarybutyl-arsine and ditertiarybutyl phosphine.
50. Growth of AlInGaP in multiwafer planetary reactors(R).
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