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2. Two-terminal III-V//Si triple-junction solar cell with power conversion efficiency of 35.9 % at AM1.5g

Author

Schygulla, Patrick, Müller, Ralph, Lackner, David, Höhn, Oliver, Hauser, Hubert, Bläsi, Benedikt, Predan, Felix, Benick, Jan, Hermle, Martin, Glunz, Stefan, Dimroth, Frank, and Publica

Subjects
III-V/Si tandem solar cells, MOVPE, Perovskites and Other Non-Silicon Materials and Devices, Multijunctions/Tandems, Efficiency, Tandems
Abstract

38th European Photovoltaic Solar Energy Conference and Exhibition; 366-370, III-V//Si multi-junction solar cells offer a pathway to increase the power conversion efficiency beyond the fundamental Auger limit of silicon single-junctions. In this work we demonstrate how the efficiency of a twoterminal wafer-bonded III-V//Si triple-junction solar cell is increased from 34.1 % to 35.9 % under an AM1.5g spectrum, the highest reported efficiency for silicon based multi-junction solar cell technologies. This improvement was accomplished by two main factors. First, the integration of a GaInAsP absorber in the middle cell increased the open-circuit voltage by 51 mV. Second, a better current matching of all subcells enhanced the short-circuit current by 0.7 mA/cm².

Published
2022

5. Epitaxial GaInP/GaAs/Si Triple-Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic AlxGa1-xAsyP1-y Step-Graded Buffer Structures

Author

Feifel, Markus, Lackner, David, Schön, Jonas, Ohlmann, Jens, Benick, Jan, Siefer, Gerald, Predan, Felix, Hermle, Martin, Dimroth, Frank, and Publica

Subjects
Silicium-Photovoltaik, Photovoltaik, III-V Epitaxie und Solarzellen, III-V- und Konzentrator-Photovoltaik, Dotierung und Diffusion
Abstract

III-V/Si multi-junction solar cells are potential successors to the silicon single-junction cell due to their efficiency potential of up to 40% in the radiative limit.[1] Herein, latest results of epitaxially integrated GaInP/GaAs/Si triple-junction cells are presented. To reduce parasitic absorption losses, which have limited the current density in the Si bottom cell in the previous devices, transparent AlxGa1-xAsyP1-y step-graded metamorphic buffers are investigated. Compared with previous GaAsyP1-y step-graded buffers, the transmittance is enhanced significantly, while no significant impact on the threading dislocation density is observed. Implemented into a new triple-junction solar cell, an increase in short-circuit current density from 10.0 to 12.2mA(cm-2) is achieved, leading to a new record conversion efficiency of 25.9% under AM1.5g conditions.

Published
2021

7. Effects of thermal annealing on structural and electrical properties of surface-activated n-GaSb/n-GaInP direct wafer bonds.

Author

Predan, Felix, Kovács, András, Ohlmann, Jens, Lackner, David, Dunin-Borkowski, Rafal E., Dimroth, Frank, and Jäger, Wolfgang

Subjects
*ANNEALING of metals, *RECRYSTALLIZATION (Metallurgy), *OHMIC contacts, *ELECTRIC contactors, *SEMICONDUCTORS
Abstract

A study on the microstructure of argon-beam activated n-GaSb/n-Ga0.32In0.68P bond interfaces is presented, focusing on the behavior of the bond upon thermal annealing and the relationship with electrical bond properties. Structural investigations of annealed samples utilizing high-resolution transmission electron microscopy combined with energy dispersive x-ray spectroscopy are discussed and compared with electrical current-voltage measurements. An amorphous interlayer of ~1.4nm thickness between the n-GaSb and n-Ga0.32In0.68P originates from the argon sputtering process. This layer continuously recrystallizes upon thermal annealing, creating a mostly crystalline interface at an annealing temperature of 500 °C. Additionally at 400 °C, In enrichment is observed in the near-surface regions of GaSb and pores are generated at the interface. At 500 °C, larger pores are observed and the In enrichment continues, leading to the formation of crystalline In precipitates within the GaSb crystal. The observed changes in the interfacial microstructure upon annealing correlate with variations in the electrical bond resistances. All bonds show ohmic IV-characteristics with resistances in the range of few mΩcm2. However, the bond resistance decreases after annealing at temperatures up to 350 °C but increases after annealing at higher temperatures. This behaviour agrees with the observation of reduced amorphous layer thickness upon annealing and with the formation of new induced interfacial defects for annealing temperatures above 350 °C. [ABSTRACT FROM AUTHOR]

Published
2017
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8. Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1%

Author

Lackner, David, primary, Höhn, Oliver, additional, Müller, Ralph, additional, Beutel, Paul, additional, Schygulla, Patrick, additional, Hauser, Hubert, additional, Predan, Felix, additional, Siefer, Gerald, additional, Schachtner, Michael, additional, Schön, Jonas, additional, Benick, Jan, additional, Hermle, Martin, additional, and Dimroth, Frank, additional

Published
2020
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10. 34.1 % Efficient GaInP/AlGaAs//Si Tandem Cell

Author

Dimroth, Frank, primary, Muller, Ralph, additional, Predan, Felix, additional, Siefer, Gerald, additional, Schygulla, Patrick, additional, Benick, Jan, additional, Hohn, Oliver, additional, Hermle, Martin, additional, Lackner, David, additional, Beutel, Paul, additional, Hauser, Hubert, additional, and Glunz, Stefan, additional

Published
2020
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11. The First Glued Tandem Solar Cell Using a ZnO Based Adhesive

Author

Heitmann, Ulrike, primary, Bartsch, Jonas, additional, Kluska, Sven, additional, Hermann, Richard, additional, Hauser, Hubert, additional, Hohn, Oliver, additional, Predan, Felix, additional, Lackner, David, additional, Dimroth, Frank, additional, and Janz, Stefan, additional

Published
2020
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15. Development of Germanium-Based Wafer-Bonded Four-Junction Solar Cells

Author

Hohn, Oliver, primary, Niemeyer, Markus, additional, Weiss, Charlotte, additional, Lackner, David, additional, Predan, Felix, additional, Franke, Alexander, additional, Beutel, Paul, additional, Schachtner, Michael, additional, Muller, Ralph, additional, Siefer, Gerald, additional, Janz, Stefan, additional, and Dimroth, Frank, additional

Published
2019
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17. Radiation hard four-junction space solar cell based on GaInAsP alloys

Author

Lackner, David, primary, Schon, Jonas, additional, Lang, Robin, additional, Godejohann, Birte-Julia, additional, Predan, Felix, additional, Schachtner, Michael, additional, Boizot, Bruno, additional, Lefevre, Jereemie, additional, Flotgen, Christoph, additional, Schwar, Joerg, additional, and Dimroth, Frank, additional

Published
2019
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18. Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic AlxGa1−xAsyP1−y Step‐Graded Buffer Structures.

Author

Feifel, Markus, Lackner, David, Schön, Jonas, Ohlmann, Jens, Benick, Jan, Siefer, Gerald, Predan, Felix, Hermle, Martin, and Dimroth, Frank

Subjects
SILICON solar cells, SOLAR cells, AUDITING standards, SHORT-circuit currents, DISLOCATION density, PHOSPHORUS
Abstract

III–V/Si multi‐junction solar cells are potential successors to the silicon single‐junction cell due to their efficiency potential of up to 40% in the radiative limit.[1] Herein, latest results of epitaxially integrated GaInP/GaAs/Si triple‐junction cells are presented. To reduce parasitic absorption losses, which have limited the current density in the Si bottom cell in the previous devices, transparent AlxGa1–xAsyP1–y step‐graded metamorphic buffers are investigated. Compared with previous GaAsyP1–y step‐graded buffers, the transmittance is enhanced significantly, while no significant impact on the threading dislocation density is observed. Implemented into a new triple‐junction solar cell, an increase in short‐circuit current density from 10.0 to 12.2 mA cm−2 is achieved, leading to a new record conversion efficiency of 25.9% under AM1.5g conditions. [ABSTRACT FROM AUTHOR]

Published
2021
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19. Advancing solar energy conversion efficiency to 47.6% and exploring the spectral versatility of III-V photonic power converters

Author

Freundlich, Alexandre, Collin, Stéphane, Hinzer, Karin, Sellers, Ian R., Helmers, Henning, Höhn, Oliver, Lackner, David, Schygulla, Patrick, Klitzke, Malte, Schön, Jonas, Pellegrino, Carmine, Oliva, Eduard, Schachtner, Michael, Beutel, Paul, Heckelmann, Stefan, Predan, Felix, Ohlmann, Jens, Siefer, Gerald, and Dimroth, Frank

Published
2024
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22. Four-Junction Wafer-Bonded Concentrator Solar Cells

Author

Dimroth, Frank, primary, Tibbits, Thomas N. D., additional, Niemeyer, Markus, additional, Predan, Felix, additional, Beutel, Paul, additional, Karcher, Christian, additional, Oliva, Eduard, additional, Siefer, Gerald, additional, Lackner, David, additional, Fus-Kailuweit, Peter, additional, Bett, Andreas W., additional, Krause, Rainer, additional, Drazek, Charlotte, additional, Guiot, Eric, additional, Wasselin, Jocelyne, additional, Tauzin, Aurelie, additional, and Signamarcheix, Thomas, additional

Published
2016
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23. Four-junction wafer bonded concentrator solar cells

Author

Dimroth, Frank, primary, Tibbits, Thomas N. D., additional, Niemeyer, Markus, additional, Predan, Felix, additional, Beutel, Paul, additional, Karcher, Christian, additional, Oliva, Eduard, additional, Siefer, Gerald, additional, Lackner, David, additional, Fuss-Kailuweit, Peter, additional, Bett, Andreas W., additional, Krause, Rainer, additional, Drazek, Charlotte, additional, Guiot, Eric, additional, Wasselin, Jocelyne, additional, Tauzin, Aurelie, additional, and Signamarcheix, Thomas, additional

Published
2015
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