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8 results on '"Predan, F."'

2. Silicon-Based Monolithic Triple-Junction Solar Cells with Conversion Efficiency >34%

Author

Müller, R., Schygulla, P., Lackner, D., Höhn, O., Hauser, H., Richter, A., Fell, A., Bläsi, B., Predan, F., Benick, J., Hermle, M., Dimroth, F., and Glunz, S.W.

Subjects
Perovskites and Other Non-Silicon Materials, MJs and Tandems, Tandems
Abstract

37th European Photovoltaic Solar Energy Conference and Exhibition; 574-578, Triple-junction solar cells with top cells made from III-V compound semiconductors on a silicon bottom cell show conversion efficiencies beyond the theoretical limit of single-junction devices, so this is one of the promising technologies for terrestrial photovoltaics. In this work, a III-V//Si tandem device with 34.5% efficiency is presented and further developments are discussed. A detailed investigation of the silicon bottom cell revealed, that with optimum wafer resistivity (~1 Ω cm) and low-temperature passivation of the cell perimeter, the perimeter losses can be reduced to ~0.2%abs. This corresponds to an efficiency gain of up to 0.8%abs for the current devices.

Published
2020
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3. Two-Terminal direct Wafer bonded GaInP/AlGaAs//Si Triple-Junction Solar Cell with AM1.5g Efficiency of 34.1 %

Author

Lackner, D., Höhn, O., Müller, R., Beutel, P., Schygulla, P., Hauser, H., Predan, F., Siefer, G., Schachtner, M., Schön, J., Benick, J., Hermle, M., Dimroth, F., and Publica

Subjects
Silicium-Photovoltaik, solar cell, MOVPE, Photovoltaik, Herstellung und Analyse von hocheffizienten Si-Solarzellen, III-V und Konzentrator-Photovoltaik, wafer bonding, III-V Epitaxie und Solarzellen, multi junction solar cell
Abstract

The terrestrial photovoltaic market is dominated by single‐junction silicon solar cell technology. However, there is a fundamental efficiency limit at 29.4%. This is overcome by multijunction devices. Recently, a GaInP/GaAs//Si wafer‐bonded triple‐junction two‐terminal device is presented with a 33.3% (AM1.5g) efficiency. Herein, it is analyzed how this device is improved to reach a conversion efficiency of 34.1%. By improving the current matching, an efficiency of 35% (two terminals, AM1.5g) is expected.

Published
2020

6. Next Generation of Wafer-Bonded Multi-Junction Solar Cells

Author

Niemeyer, M., Klinger, V., Dimroth, F., Predan, F., Fuss-Kailuweit, P., Reinwand, D., Lackner, D., Wekkeli, A., Oliva, E., Schachtner, M., Siefer, G., and Bett, A.W.

Subjects
SOLAR CELLS / ASSEMBLIES / MODULES FOR TERRESTRIAL CONCENTRATOR SYSTEMS AND FOR SPACE SOLAR GENERATORS, III-V-based Multi-junction Solar Cells, Concentrator Solar Cells and Space Solar Cells
Abstract

29th European Photovoltaic Solar Energy Conference and Exhibition; 1991-1995, The highest conversion efficiencies are reached by multi-junction III-V solar cells. Wafer-bonding offers new possibilities to advance beyond the industrial standard triple-junction cells and its efficiency limitations. Here we present for the first time results of two novel 4-junction device concepts based on direct wafer-bonding with a realistic efficiency potential of 50% under concentrated sunlight. In the first concept, an inverted grown GaInP/GaAs tandem cell is bonded to a metamorphic GaInAs/Ge tandem cell. Frist bonded 4-junction solar cell on Ge shows an efficiency of 34.5% under one sun AM1.5d. In the latter concept a GaSb cell will be bonded to an inverted metamorphic triple-junction solar cell. The main challenge in this approach is a conductive direct wafer bond between the two cell stacks. Here, bond characteristics between GaSb and Ga0.29In0.71P and another between GaSb and Ga0.79In0.21As are shown for the first time.

Published
2014
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8. Mask and plate: a scalable front metallization with low-cost potential for III-V-based tandem solar cells enabling 31.6 % conversion efficiency.

Author

Schube J, Höhn O, Schygulla P, Müller R, Jahn M, Mikolasch G, Steiner M, Predan F, Bartsch J, Dimroth F, Clement F, and Keding R

Abstract

Low-cost approaches for mass production of III-V-based photovoltaics are highly desired today. For the first time, this work presents industrially relevant mask and plate for front metallization of III-V-based solar cells replacing expensive photolithography. Metal contacts are fabricated by nickel (Ni) electroplating directly onto the solar cell's front using a precisely structured mask. Inkjet printing offers low-cost and high-precision processing for application of an appropriate plating resist. It covers the solar cell's front side with narrow openings for subsequent electroplating. The width of the resulting Ni contacts is as low as (10.5 ± 0.8) µm with sharp edges and homogenous shape. The 4 cm 2 -sized champion III-V-on-silicon triple-junction solar cell with mask and plate front metallization reaches a certified conversion efficiency η of (31.6 ± 1.1) % (AM1.5 g spectrum). It performs just as well as the reference sample with photolithography-structured evaporated front contacts, which reaches η = (31.4 ± 1.1) %., (© 2023. Springer Nature Limited.)

Published
2023
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