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We demonstrate terahertz (THz) harmonic generation across the Mott insulator-metal transition in rare-earth nickelates (RNiO$_3$, R = rare-earth atom). The THz harmonic generation is observed in all the three different phases with distinct behaviors: the intensity of harmonics increases upon cooling in both the low-temperature antiferromagnetic (AFM) insulating and high-temperature paramagnetic (PM) metallic phases, while this trend is reversed in the intermediate PM insulating phase. Using single- and two-band Hubbard models, we find different dominant origins of THz harmonics in different phases: strong spin-charge and orbital-charge couplings in the AFM insulating phase, intraband currents from renormalized quasi-particles with frequency-dependent scattering rate in the PM metallic phase, and the reduction of the charge carrier density due to the opening of the Mott gap in the PM insulating phase. Our study offers strategies for efficient THz harmonic generation from Mott and other strongly correlated systems and insights into the fundamental physics of complex materials., Comment: Submitted to Physical Review Letters. 5 pages, 3 figures

The ultrafast control of magnetisation states in magnetically ordered systems is a key technological challenge for developing memory devices operable at picosecond timescales or terahertz (THz) frequencies. Despite significant efforts in ultrafast magnetic switching, convenient ultrafast readout of magnetic states remains under investigation. Currently, many experiments exploit magneto-optical effects for detecting magnetisation states, necessitating laser sources and optical components. However, energy-efficient and cost-effective electrical detection is preferred for practical applications. Unidirectional spin-Hall magnetoresistance (USMR) was proposed as a simple two-terminal geometry for the electrical detection of the magnetisation state in magnetic heterostructures. Here, we demonstrate that USMR is active at THz frequencies for picosecond time readouts, and can be initiated with light fields. We detect ultrafast USMR in various types of ferromagnet/heavy metal thin film heterostructures through THz second harmonic generation. Our studies, combined with temperature-dependent measurements of USMR, reveal a significant contribution from electron-magnon spin-flip scattering. This suggests possibilities for all-electrical detection of THz magnon modes., Comment: 20 pages, 5 figures

The interplay of electric charge, spin, and orbital polarizations, coherently driven by picosecond long oscillations of light fields in spin-orbit coupled systems, is the foundation of emerging terahertz spintronics and orbitronics. The essential rules for how terahertz light interacts with these systems in a nonlinear way are still not understood. In this work, we demonstrate a universally applicable electronic nonlinearity originating from spin-orbit interactions in conducting materials, wherein the interplay of light-induced spin and orbital textures manifests. We utilized terahertz harmonic generation spectroscopy to investigate the nonlinear dynamics over picosecond timescales in various transition metal films. We found that the terahertz harmonic generation efficiency scales with the spin Hall conductivity in the studied films, while the phase takes two possible values (shifted by {\pi}), depending on the d-shell filling. These findings elucidate the fundamental mechanisms governing non-equilibrium spin and orbital polarization dynamics at terahertz frequencies, which is relevant for potential applications of terahertz spin- and orbital-based devices., Comment: 11 pages, 4 figures

The nonlinear Hall effect (NLHE) with time-reversal symmetry constitutes the appearance of a transverse voltage quadratic in the applied electric field. It is a second-order electronic transport phenomenon that induces frequency doubling and occurs in non-centrosymmetric crystals with large Berry curvature -- an emergent magnetic field encoding the geometric properties of electronic wavefunctions. The design of (opto)electronic devices based on the NLHE is however hindered by the fact that this nonlinear effect typically appears at low temperatures and in complex compounds characterized by Dirac or Weyl electrons. Here, we show a strong room temperature NLHE in the centrosymmetric elemental material bismuth synthesized in the form of technologically relevant polycrystalline thin films. The ($1\,1\,1$) surface electrons of this material are equipped with a Berry curvature triple that activates side jumps and skew scatterings generating nonlinear transverse currents. We also report a boost of the zero field nonlinear transverse voltage in arc-shaped bismuth stripes due to an extrinsic geometric classical counterpart of the NLHE. This electrical frequency doubling in curved geometries is then extended to optical second harmonic generation in the terahertz (THz) spectral range. The strong nonlinear electrodynamical responses of the surface states are further demonstrated by a concomitant highly efficient THz third harmonic generation which we achieve in a broad range of frequencies in Bi and Bi-based heterostructures. Combined with the possibility of growth on CMOS-compatible and mechanically flexible substrates, these results highlight the potential of Bi thin films for THz (opto)electronic applications., Comment: 44 pages, 21 figures