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MicroLEDs, particularly when integrated with CMOS microelectronics, represent a significant advancement in nitride technology. While large-area, high-power LEDs for solid-state lighting have seen extensive optimization, microLEDs present unique fabrication and characterization challenges. Utilizing standard CMOS design and foundry services for silicon driver electronics, a new hybrid interconnect technology must be developed for chip–chip or wafer–wafer integration, necessitating much higher lateral resolution than current bonding technologies. Beyond display technology, microLED integration opens avenues for groundbreaking applications such as highly efficient nanosensors, miniaturized optical neuromorphic networks, and robust chip-based microscopy. This paper explores recent advancements in nitride/CMOS hybrid modules, providing an overview of current technologies and future possibilities in this dynamic field. [ABSTRACT FROM AUTHOR]

The role of different charge transport mechanisms in Si=SiO2 structures has been studied. A theoretical model based on the Transfer Hamiltonian Formalism has been developed to explain experimental current trends in terms of three different elastic tunneling processes: (1) trap assisted tunneling; (2) transport through an intermediate quantum dot; and (3) direct tunneling between leads. In general, at low fields carrier transport is dominated by the quantum dots whereas, for moderate and high fields, transport through deep traps inherent to the SiO2 is the most relevant process. Besides, current trends in Si=SiO2 superlattice structure have been properly reproduced. [ABSTRACT FROM AUTHOR]

The physical laws of diffraction limit the spatial resolution of optical systems. In contrary to most superresolution microscopy approaches used today, in our novel idea we are aiming to overcome this limit by developing a spatially resolved illumination source based on semiconductor nanoscale light emitting diode (nanoLED) arrays with individual pixel control. We present and discuss the results of optical simulations performed for such nanoLED emitter arrays and analyze the theoretical limits of this approach. As possible designs we study arrays of GaN nanofins and nanorods (obtained by etching nanofin arrays), with InGaN/GaN multi quantum wells embedded as active regions. We find that a suitable choice of the array dimensions leads to a reasonably directed light output and concentration of the optical power in the near field around an activated pixel. As a consequence, the spatial resolution for this type of microscopy should only be limited by the pixel pitch, and no longer by the optical diffraction. Realization of optimized nanoLED arrays has a potential to open new field of chip based superresolution microscopy, making super-high spatial resolution ubiquitously available. [ABSTRACT FROM AUTHOR]

Silicon nanowires synthesized on an amorphous substrate by the vapor-liquid-solid method were studied using Raman spectroscopy and ab initio calculations. The authors show that the Raman spectrum of Si nanowires is compatible with the existence of two distinct phases. The Raman spectra revealed a peak centered around 517 cm-1 as expected for the nanosized diamond cubic phase (Si-I). However, two new contributions, centered around 506 and 516 cm-1, arose which they attributed to the diamond hexagonal phase (Si-IV). The identification of these Raman peaks clarifies the controversy surrounding the vibration modes of Si-IV previously reported in the literature. [ABSTRACT FROM AUTHOR]