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2 results on '"Positive Voltage Range"'

1. CH3NH3PbX3 (X = I, Br) encapsulated in silicon carbide/carbon nanotube as advanced diodes

Author

Lishu Zhang, Xinyue Dai, Tao Li, Jie Li, and Hui Li

Subjects
Silicon Carbide Nanotubes, Projected Density Of States (PDOS), Bias Window, Methylammonium, Positive Voltage Range, Medicine, Science
Abstract

Abstract We employ first-principles density functional theory (DFT) calculations to study CH3NH3PbX3 (X = I, Br) and its encapsulation into the silicon carbide nanotube and carbon nanotube (CNT). Our results indicate that these devices show diode behaviors which act on negative bias voltage but do not work under positive voltage. When they are encapsulated into SiC nanotube and CNT, their electronic properties would be changed, especially, electric currents mainly exist at positive bias region. Corresponding transmission spectra and density of states are provided to interpret the transport mechanism of the CH3NH3PbX3 (X = I, Br) as a diode. These findings open a new door to microelectronics and integrated circuit components, providing theoretical foundation for innovation of the new generation of electronic materials.

Published
2018
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2. CH3NH3PbX3 (X = I, Br) encapsulated in silicon carbide/carbon nanotube as advanced diodes

Author

Jie Li, Hui Li, Tao Li, Lishu Zhang, and Xinyue Dai

Subjects
Nanotube, Materials science, Silicon Carbide Nanotubes, Science, 02 engineering and technology, Carbon nanotube, 010402 general chemistry, 01 natural sciences, law.invention, Condensed Matter::Materials Science, chemistry.chemical_compound, law, Bias Window, Silicon carbide, Microelectronics, Projected Density Of States (PDOS), Diode, Multidisciplinary, business.industry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, chemistry, Methylammonium, Positive Voltage Range, Density of states, Medicine, Optoelectronics, Density functional theory, Electric current, 0210 nano-technology, business
Abstract

We employ first-principles density functional theory (DFT) calculations to study CH3NH3PbX3 (X = I, Br) and its encapsulation into the silicon carbide nanotube and carbon nanotube (CNT). Our results indicate that these devices show diode behaviors which act on negative bias voltage but do not work under positive voltage. When they are encapsulated into SiC nanotube and CNT, their electronic properties would be changed, especially, electric currents mainly exist at positive bias region. Corresponding transmission spectra and density of states are provided to interpret the transport mechanism of the CH3NH3PbX3 (X = I, Br) as a diode. These findings open a new door to microelectronics and integrated circuit components, providing theoretical foundation for innovation of the new generation of electronic materials.

Published
2018

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