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κ-Ga2O3 has been predicted to be a potential ferroelectric material. In this work, undoped Ga2O3 films were grown by either plasma-enhanced atomic layer deposition (PEALD) or metal organic chemical vapor deposition (MOCVD) on platinized sapphire substrates. 50 nm thick PEALD films with a mixture of κ-Ga2O3 and β-Ga2O3 had a relative permittivity of ∼27, a loss tangent below 2%, and high electrical resistivity up to ∼1.5 MV/cm. 700 nm thick MOCVD films with predominantly the κ-Ga2O3 phase had relative permittivities of ∼18 and a loss tangent of 1% at 10 kHz. Neither film showed compelling evidence for ferroelectricity measured at fields up to 1.5 MV/cm, even after hundreds of cycles. Piezoresponse force microscopy measurements on bare κ-Ga2O3 showed a finite piezoelectric response that could not be reoriented for electric fields up to 1.33 MV/cm. [ABSTRACT FROM AUTHOR]

Phase transitions in metastable α-, κ(ε)-, and γ-Ga2O3 films to thermodynamically stable β-Ga2O3 during annealing in air, N2, and vacuum have been systematically investigated via in situ high-temperature x-ray diffraction (HT-XRD) and scanning electron microscopy (SEM). These respective polymorphs exhibited thermal stability to ∼471–525 °C, ∼773–825 °C, and ∼490–575 °C before transforming into β-Ga2O3, across all tested ambient conditions. Particular crystallographic orientation relationships were observed before and after the phase transitions, i.e., (0001) α-Ga2O3 → ( 2 ¯ 01) β-Ga2O3, (001) κ(ε)-Ga2O3 → (310) and ( 2 ¯ 01) β-Ga2O3, and (100) γ-Ga2O3 → (100) β-Ga2O3. The phase transition of α-Ga2O3 to β-Ga2O3 resulted in catastrophic damage to the film and upheaval of the surface. The respective primary and possibly secondary causes of this damage are the +8.6% volume expansion and the dual displacive and reconstructive transformations that occur during this transition. The κ(ε)- and γ-Ga2O3 films converted to β-Ga2O3 via singular reconstructive transformations with small changes in volume and unchanged surface microstructures. [ABSTRACT FROM AUTHOR]

Phase and microstructural evolution of gallium oxide (Ga2O3) films grown on vicinal (0001) sapphire substrates was investigated using a suite of analytical tools. High-resolution transmission electron microscopy and scanning transmission electron microscopy of a film grown at 530 °C revealed the initial pseudomorphic growth of three to four monolayers of α-Ga2O3, a 20–60 nm transition layer that contained both β- and γ-Ga2O3, and a top ∼700 nm-thick layer of phase-pure κ-Ga2O3. Explanations for the occurrence of these phases and their sequence of formation are presented. Additional growths of Ga2O3 films in tandem with x-ray diffraction and scanning electron microscopy investigations revealed that the top layer varied in phase composition between ∼100% κ-Ga2O3 and ∼100% β-Ga2O3; the surface microstructure ranged from poorly coalesced to completely coalesced grains as a function of growth temperature, growth rate, or diluent gas flow rate. In general, it was found that the κ-phase is favored at lower growth temperatures and higher triethylgallium flow rates (low VI/III ratios). The growth of nominally single-phase κ-Ga2O3 within the top layer was observed in a temperature range between 500 and 530 °C. Below 470 °C, only amorphous Ga2O3 was obtained; above 570 °C, only the β-phase was deposited. [ABSTRACT FROM AUTHOR]

A near-ideal and homogeneous β-Ga2O3 Schottky diode with Co contact for a doping level of ∼4.2 × 1017 cm−3 in the drift layer where the Boltzmann approximation is valid is reported. Unlike Si or GaN, thermionic emission is shown to be the dominant current conduction mechanism in the β-Ga2O3 Schottky diode at this doping level. A wide depletion region appended with a large built-in potential is observed to limit the thermionic field emission current, which is otherwise evident in narrower bandgap semiconductor (such as Si or GaN) Schottky diodes having a similar carrier concentration in the drift region. The results shown in this study can be used to identify the theoretical limits of drift layer doping beyond which the ideality factor and reverse leakage current should start deteriorating in ultra-wide bandgap semiconductor based Schottky diodes. [ABSTRACT FROM AUTHOR]

Nominally phase-pure γ-Ga2O3 was deposited on (100) MgAl2O4 within a narrow temperature window centered at ∼470 °C using metal-organic chemical vapor deposition. The film deposited at 440 °C exhibited either poor crystallization or an amorphous structure; the film grown at 500 °C contained both β-Ga2O3 and γ-Ga2O3. A nominally phase-pure β-Ga2O3 film was obtained at 530 °C. Atomic-resolution scanning transmission electron microscopy (STEM) investigations of the γ-Ga2O3 film grown at 470 °C revealed a high density of antiphase boundaries. A planar defect model developed for γ-Al2O3 was extended to explain the stacking sequences of the Ga sublattice observed in the STEM images of γ-Ga2O3. The presence of the 180° rotational domains and 90° rotational domains of β-Ga2O3 inclusions within the γ-Ga2O3 matrix is discussed within the context of a comprehensive investigation of the epitaxial relationship between those two phases in the as-grown film at 470 °C and the same film annealed at 600 °C. The results led to the hypotheses that (i) incorporation of certain dopants, including Si, Ge, Sn, Mg, Al, and Sc, into β-Ga2O3 locally stabilizes the "γ-phase" and (ii) the site preference(s) for these dopants promotes the formation of "γ-phase" and/or γ-Ga2O3 solid solutions. However, in the absence of such dopants, pure γ-Ga2O3 remains the least stable Ga2O3 polymorph, as indicated by its very narrow growth window, lower growth temperatures relative to other Ga2O3 polymorphs, and the largest calculated difference in Helmholtz free energy per formula unit between γ-Ga2O3 and β-Ga2O3 than all other polymorphs. [ABSTRACT FROM AUTHOR]

Atomic resolution scanning/transmission electron microscopy (S/TEM) and energy-dispersive x-ray (EDX) analysis were used to determine the effects of annealing at 800–1000 °C in air on Ga2O3 films grown on (100) MgAl2O4 at 650 °C via metal-organic chemical vapor deposition. Annealing resulted in the diffusion of Mg and Al into the films concomitantly with the transformation of β-Ga2O3 to γ-Ga2O3 solid solutions. The minimum atomic percent of Al + Mg that corresponded with the transformation was ∼4.6 at. %. Analyses of atomic-scale STEM images and EDX profiles revealed that the Al and Mg atoms in the γ-Ga2O3 solid solutions occupied octahedral sites; whereas the Ga atoms occupied tetrahedral sites. These site preferences may account for the stabilization of the γ-Ga2O3 solid solutions. [ABSTRACT FROM AUTHOR]

Ga2O3 films were deposited on (100) MgAl2O4 spinel substrates at 550, 650, 750, and 850 ° C using metal-organic chemical vapor deposition and investigated using x-ray diffraction and transmission electron microscopy. A phase-pure γ-Ga2O3-based material having an inverse spinel structure was formed at 850 °C; a mixture of the γ-phase and β-Ga2O3 was detected in films grown at 750 ° C. Only β-Ga2O3 was determined in the films deposited at 650 and 550 ° C. A β- to γ-phase transition occurred from the substrate/film interface during growth at 750 ° C. The growth and stabilization of the γ-phase at the outset of film growth at 850 ° C was affected by the substantial Mg and Al chemical interdiffusion from the MgAl2O4 substrate observed in the energy-dispersive x-ray spectrum. Atomic-scale investigations via scanning transmission electron microscopy of the films grown at 750 and 850 ° C revealed a strong tetrahedral site preference for Ga and an octahedral site preference for Mg and Al. It is postulated that the occupation of these atoms in these particular sites drives the β-Ga2O3 to γ-phase transition and markedly enhances the thermal stability of the latter phase at elevated temperatures. [ABSTRACT FROM AUTHOR]

Thin (40–150 nm), highly doped n+ (1019–1020 cm−3) Ga2O3 layers deposited using pulsed laser deposition (PLD) were incorporated into Ti/Au ohmic contacts on (001) and (010) β-Ga2O3 substrates with carrier concentrations between 2.5 and 5.1 × 1018 cm−3. Specific contact resistivity values were calculated for contact structures both without and with a PLD layer having different thicknesses up to 150 nm. With the exception of a 40 nm PLD layer on the (001) substrate, the specific contact resistivity values decreased with increasing PLD layer thickness: up to 8× on (001) Ga2O3 and up to 16× on (010) Ga2O3 compared with samples without a PLD layer. The lowest average specific contact resistivities were achieved with 150 nm PLD layers: 3.48 × 10−5 Ω cm2 on (001) Ga2O3 and 4.79 × 10−5 Ω cm2 on (010) Ga2O3. Cross-sectional transmission electron microscopy images revealed differences in the microstructure and morphology of the PLD layers on the different substrate orientations. This study describes a low-temperature process that could be used to reduce the contact resistance in Ga2O3 devices. [ABSTRACT FROM AUTHOR]

We have investigated the thermal stability of Co/Au and Ni/Au Schottky contacts to Sn-doped ( 2 ¯ 01) β-Ga2O3 substrates. Current–voltage (I–V) and capacitance–voltage (C–V) measurements were conducted after sequential annealing treatments totaling > 400 h at 300°C and > 150 h at 500°C in vacuum. For both sets of contacts, the average Schottky barrier heights (SBHs) calculated from the I–V measurements displayed no significant changes and remained within a narrow range throughout the anneals at 300°C. The SBHs calculated from the C–V measurements also remained largely constant for 300°C anneals, except for a modest increase for both contacts for anneal times > 350 h. For 500°C anneals, the I–V characteristics for Ni/Au and Co/Au contacts displayed continual degradation in the electrical behavior after 12 h and 24 h, respectively. Characterizations using scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and scanning electron microscopy of the samples annealed at 500°C revealed considerable changes in film morphology, interdiffusion, and phase segregation within the contacts. The results suggest the potential for Co/Au or Ni/Au Schottky contacts to be used in Ga2O3 devices at temperatures below, or possibly up to, 300°C, whereas higher temperatures will require modified metallization schemes. [ABSTRACT FROM AUTHOR]

Cardiac ATP-sensitive [K.sup.+] ([K.sub.ATP]) channels are formed by Kir6.2 and SUR2A subunits. We produced transgenic mice that express dominant negative Kir6.x pore-forming subunits (Kir6.1-AAA or Kir6.2-AAA) in cardiac myocytes by driving their expression with the [alpha]-myosin heavy chain promoter. Weight gain and development after birth of these mice were similar to nontransgenic mice, but an increased mortality was noted after the age of 4-5 mo. Transgenic mice lacked cardiac [K.sub.ATP] channel activity as assessed with patch clamp techniques. Consistent with a decreased current density observed at positive voltages, the action potential duration was increased in these mice. Some myocytes developed EADs after isoproterenol treatment. Hemodynamic measurements revealed no significant effects on ventricular function (apart from a slightly elevated heart rate), whereas in vivo electrophysiological recordings revealed a prolonged ventricular effective refractory period in transgenic mice. The transgenic mice tolerated stress less well as evident from treadmill stress tests. The proarrhythmogenic features and lack of adaptation to a stress response in transgenic mice suggest that these features are intrinsic to the myocardium and that [K.sub.ATP] channels in the myocardium have an important role in protecting the heart from lethal arrhythmias and adaptation to stress situations. potassium channels; ATP-sensitive [K.sup.+] channel; heart; ventricle; stress responses doi:10.1152/ajpheart.00051.2006

Date Presented 03/23/24 This qualitative study explores the experience of eleven adults and adolescents with sensory integration/processing differences through semi-structured interviews after completion of intervention. Implications relate to better targeted intervention. Primary Author and Speaker: Dana Miller Additional Authors and Speakers: Sarah A. Schoen, Carolyn M. Schmitt, Lisa M. Porter [ABSTRACT FROM AUTHOR]

A study was conducted on the role of QLS motif in transmembrane helix VII of the glucose transporter family. The findings indicate that the QLS motif in helix VII functions as a molecular filter that dictates the ability of GLUTs 1, 3 and 4 to transport glucose. Moreover, this region of helix VII plays a key role in substrate recognition at the exofacial substrate binding site by interaction with the C-1 position of the incoming sugar molecule.

Alanine-scanning mutagenesis of putative transmembrane helix VIII and an investigation of the role of proline residues in transport catalysis were conducted to understand the structure-function of the brain-type glucose transporter, GLUT3. Results reveal that no individual amino acid within the helix is required for transport catalysis. Results also suggest that the role of the helix is to provide a framework for structural packing within the transporter molecule.

A range of chimeric glucose transporters composed of regions of liver-type (GLUT2) and brain-type (GLUT3) human facilitative glucose transporters were produced to determine the regions of the transporter which are involved in substrate recognition and binding. Findings indicate a model in which the seventh putative transmembrane-spanning helix is intimately involved in the selection of transported substrate and in which this region plays a critical role in determining the K(sub m) for 2-deoxyglucose.

Chemical and electrical measurements of Ti/(010) β-Ga2O3 and Ti/(001) β-Ga2O3 interfaces were conducted as a function of annealing temperature using x-ray photoelectron spectroscopy (XPS), current density–voltage (J–V), and capacitance–voltage (C–V) measurements. XPS revealed partial Ti oxidation at both interfaces in the as-deposited condition, with more Ti oxidation on the (001) β-Ga2O3 epilayer surface than the (010) β-Ga2O3 substrate surface. The amount of oxidized Ti increased with annealing temperature. The Schottky barrier heights for as-deposited (unannealed) Au/Ti/(010) β-Ga2O3 and Au/Ti/(001) β-Ga2O3 contacts as determined from J–V and C–V measurements were between 0.64 and 0.83 eV. Shifts in XPS core level peaks for Ti/(010) β-Ga2O3 suggest that the Schottky barrier height decreases with temperature up to 350 °C for 10-min anneals and increases for 10-min anneals ≥460 °C. Taken together, the results suggest a strong dependence of Ti reactivity on the β-Ga2O3 surface, which can affect the electrical performance and stability of Ti/β-Ga2O3 ohmic contacts at elevated temperatures. [ABSTRACT FROM AUTHOR]