322 results on '"Polyakov, A.Y."'
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2. High-quality Cr2O3 - Ga2O3 solid solutions films grown by mist-CVD epitaxy
3. Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3
4. Two-dimensional hole gas formation at the κ-Ga2O3 /AlN heterojunction interface
5. Magma fracking and production reservoirs beneath and adjacent to Mutnovsky volcano based on seismic data and hydrothermal activity
6. Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking
7. Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells
8. Influence of Ga-halogen bond formation at the interface of nanoporous GaN photoelectrodes for enhanced photoelectrochemical water splitting efficiency
9. Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress
10. Thermal-permeability structure and recharge conditions of the Mutnovsky high-temperature geothermal field (Kamchatka, Russia)
11. Electron Beam Induced Current Study of Photocurrent Gain in κ-Ga2O3 Schottky Diodes
12. Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy
13. Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN
14. Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters<30 µm
15. Impact of porosity on the structural and optoelectronic properties of nanoporous GaN double layer fabricated via combined electrochemical and photoelectrochemical etching
16. Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching
17. Properties of nanopillar structures prepared by dry etching of undoped GaN grown by maskless epitaxial overgrowth
18. Corrigendum to “Dynamics of natural discharge of the hydrothermal system and geyser eruption regime in the Valley of Geysers, Kamchatka” [Appl. Geochem. 136 (2022) 105166]
19. Dynamics of natural discharge of the hydrothermal system and geyser eruption regime in the Valley of Geysers, Kamchatka
20. Corrigendum to “Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells” [J. Alloy. Compd. 868 (2021) 159211]
21. On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors
22. Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire
23. Electrical and luminescent properties and deep traps spectra of N-polar GaN films
24. Deep centers in bulk AlN and their relation to low-angle dislocation boundaries
25. EBIC investigations of defect distribution in ELOG GaN films
26. Electrical properties and deep traps spectra in AlGaN films with nitrogen and gallium polarities prepared by molecular beam epitaxy
27. EBIC and CL studies of ELOG GaN films
28. Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth
29. Deep-level studies in GaN layers grown by epitaxial lateral overgrowth
30. Estimations of Activation Energy for Dislocation Mobility in p-GaN
31. Radiation Damage in GaN-Based Materials and Devices
32. Synthesis solute diffusion growth of bulk GaAs: Effects of growth temperature and stoichiometry
33. Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical–chemical vapor transport method
34. Residual impurities and native defects in 6H-SiC bulk crystals grown by halide chemical-vapor deposition
35. Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
36. Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments
37. Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes
38. Neutron irradiation effects in AlGaN/GaN heterojunctions
39. Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition
40. Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers
41. Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition
42. Halide-CVD Growth of Bulk SiC Crystals
43. Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates
44. Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes
45. Resistivity Distribution in Undoped 6H-SiC Boules and Wafers
46. Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC
47. Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk Crystals
48. Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition
49. Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy
50. Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy
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