Search

This paper demonstrates a five-layer InAs/InP quantum-dash semiconductor optical amplifier (QDash-SOA), which will be integrated into microwave-photonic on-chip devices for millimeter-wave (mmWave) over fibre wireless networking systems. A thorough investigation of the QDash-SOA is conducted regarding its communication performance at different temperatures, bias currents, and input powers. The investigation shows a fibre-to-fibre (FtF) small-signal gain of 18.79 dB and a noise figure of 6.3 dB. In a common application with a 300 mA bias current and 25 °C temperature, the peak FtF gain is located at 1507.8 nm, which is 17.68 dB, with 3 dB gain bandwidth of 56.6 nm. Furthermore, the QDash-SOA is verified in a mmWave radio-over-fibre link with QAM (32 Gb/s 64-QAM 4-GBaud) and OFDM (250 MHz 64-QAM) signals. The average error vector magnitude of the QAM and OFDM signals after a 2 m wireless link could be as low as 8.29% and 6.78%, respectively. These findings highlight the QDash-SOA's potential as a key amplifying component in future integrated microwave-photonic on-chip devices. [ABSTRACT FROM AUTHOR]

Florence Bourillon, Nathalie Gorochov, Boris Nogues et Loic Vadelorge, dir., L'universite et la ville : les espaces universitaires et leurs usages en Europe du XIIIe au XXIe siecle Rennes, Presses [...]

The influence of the degree of quantum confinement on the carrier dynamics and high-speed performance of semiconductor optical amplifiers (SOAs) is evaluated by comparing the amplitude and phase recovery dynamics in three SOAs with different dimensionalities. Findings reveal that shorter gain recovery time results in lower dimensionality in the active region.

The equipment and methods used to produce wide-angle antireflection coatings based on Reststrahlen materials are described. The optical constants of the coating materials used in the construction of the multilayers were determined by spectrophotometric ellipsometry and are compared with the literature values. The measured performance of an experimentally produced antireflection coating is compared with the expected calculated performance. The reflectance is low over a wide range of angles, but only in the narrow-wavelength region at which the refractive index of the Reststrahlen material is close to unity. OCIS codes: 310.0310, 310.1210, 310.1860, 310.3840.

Recently we performed a numerical investigation of antireflection coatings that reduce significantly the reflection over a wide range of wavelengths and angles of incidence, and we proposed some experiments to demonstrate their feasibility. We provide a theoretical description of omnidirectional antireflection coatings that are effective over a wide range of wavelengths.

We propose using ion-beam etching as an additional tool for the accurate control of the thickness of thin films during the manufacture of sensitive optical multilayer coatings. We use a dual ion-beam sputtering system in the deposition and etch modes. In the deposition mode both the assist and sputtering ion beams are used to produce dense films at deposition rates in the range of 0.1-0.3 nm/s. In the etch mode, only the assist ion beam is used to remove material at a rate of less than 0.1 nm/s. A very high precision in the layer thicknesses can be obtained by alternating between deposition and etch modes. We observed that etching did not significantly affect the surface quality and the uniformity of the coatings. We introduced etching into our current manufacturing process and demonstrated its potential for the fabrication of several optical multilayer systems with performances that are very sensitive to the thickness of their layers. OCIS codes: 310.1620, 310.1860.