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17 results on '"Plugotarenko, Nina"'

2. Investigation of Adsorption Kinetics on the Surface of a Copper-Containing Silicon–Carbon Gas Sensor: Gas Identification.

Author

Plugotarenko, Nina K., Novikov, Sergey P., Myasoedova, Tatiana N., and Mikhailova, Tatiana S.

Subjects
GAS detectors, ADSORPTION kinetics, GENETIC algorithms, CARBON films, CARBON monoxide, NITROGEN dioxide
Abstract

The low selectivity of materials to gases of a similar nature may limit their use as sensors. Knowledge of the adsorption kinetic characteristics of each gas on the surface of the material may enable the ability to identify them. In this work, copper-containing silicon–carbon films were formed using electrochemical deposition on the Al2O3 substrate with interdigitated Cr/Cu/Cr electrodes. These films showed good adsorption characteristics with several different gases. The adsorption kinetics of nitrogen dioxide, sulfur dioxide, and carbon monoxide on the film surface were investigated by the change in the resistivity of the material. Pseudo-first-order and pseudo-second-order kinetics, Elovich, Ritchie, and Webber intraparticle diffusion models were applied. It was found that the largest approximation factor and the lowest Root-Mean-Square Error and Mean Bias Error for all three gases were for the Elovich model. The advantages of silicon–carbon copper-containing films for gas sensor applications were shown. An algorithm for gas recognition was proposed based on the dependence of the change in the resistivity of the material under stepwise gas exposure. It was found that parameters such as the values of the extrema of the first and second derivatives of the R vs. t dependence during adsorption and the slope of R vs. t dependence in the Elovich coordinates are responsible for gas identification among several one-nature gases. [ABSTRACT FROM AUTHOR]

Published
2023
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17. SiO2ZrO2 Thin Films as Low Temperature NO2 and O3 Sensors

Author

Myasoedova, T.N., Petrov, Victor V., Plugotarenko, Nina K., Sergeenko, Dmitriy V., Yalovega, Galina E., Brzhezinskaya, Mariya M., and Shishlyanikova, Evgeniya N.

Abstract

Thin SiO2ZrO2 films were prepared, up to 0.2 μm thick, by means of the sol–gel technology and characterized by a Scanning electron microscopy and X-ray diffraction. It is shown the presence of monoclinic, cubic and tetragonal phases of ZrO2 in the SiO2 matrix. The crystallites sizes depend on the annealing temperature of the film and amount to 35 and 56 nm for the films annealed at 773 and 973 K, respectively. The films resistance is rather sensitive to the presence of NO2 and O3 impurity in air at lower operating temperatures in the range of 30-60°C.

Published
2015
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