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218 results on '"Plis, E."'

6. Space Weathering Experiments on Spacecraft Materials

Author

Engelhart, D. P, Cooper, R, Cowardin, H, Maxwell, J, Plis, E, Ferguson, D, Barton, D, Schiefer, S, and Hoffmann, R

Subjects
Space Processing
Abstract

A project to investigate space environment effects on specific materials with interest to remote sensing was initiated in 2016. The goal of the project is to better characterize changes in the optical properties of polymers found in multi-layered spacecraft insulation (MLI) induced by electron bombardment. Previous analysis shows that chemical bonds break and potentially reform when exposed to high energy electrons like those seen in orbit. These chemical changes have been shown to alter a material's optical reflectance, among other material properties. This paper presents the initial experimental results of MLI materials exposed to various fluences of high energy electrons, designed to simulate a portion of the geosynchronous Earth orbit (GEO) space environment. It is shown that the spectral reflectance of some of the tested materials changes as a function of electron dose. These results provide an experimental benchmark for analysis of aging effects on satellite systems which can be used to improve remote sensing and space situational awareness. They also provide preliminary analysis on those materials that are most likely to comprise the high area-to-mass ratio (HAMR) population of space debris in the geosynchronous orbit environment. Finally, the results presented in this paper serve as a proof of concept for simulated environmental aging of spacecraft polymers that should lead to more experiments using a larger subset of spacecraft materials.

Published
2017

10. Long-wave InAs/GaSb superlattice detectors based on nBn and pin designs

Author

Khoshakhlagh, A., Myers, S., HaSul Kim, Plis, E., Gautam, N., Sang Jun Lee, Noh, S.K., Dawson, L.R., and Krishna, S.

Subjects
Antimony -- Electric properties, Antimony -- Optical properties, Arsenic -- Electric properties, Arsenic -- Optical properties, Gallium -- Electric properties, Gallium -- Optical properties, Indium -- Electric properties, Indium -- Optical properties, Infrared radiation -- Analysis, Photodetectors -- Design and construction, Photodetectors -- Electric properties, Photodetectors -- Optical properties, Quantum electronics -- Analysis, Business, Computers, Electronics, Electronics and electrical industries
Published
2010

12. InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations.

Author

Lackner, D., Steger, M., Thewalt, M. L. W., Pitts, O. J., Cherng, Y. T., Watkins, S. P., Plis, E., and Krishna, S.

Subjects
SUPERLATTICES, OPTOELECTRONIC devices, INDIUM arsenide, GALLIUM compounds, PHOTOLUMINESCENCE
Abstract

InAsSb/InAs type II strain balanced superlattices lattice matched to GaSb have recently been proposed as an alternative to InAs/(In)GaSb short period superlattices for mid- to long infrared photodetectors. Photoluminescence data at 4 K of OMVPE grown InAsSb (multi-) quantum wells in an InAs matrix on InAs and GaSb substrates is presented for Sb compositions between 4% and 27%. The measured transition energies are simulated with a self-consistent Poisson and Schroedinger equation solver that includes strain and band-offsets. The fitted parameters are then used to predict the type II transition energies of InAsSb/InAs strain balanced superlattice absorber stacks at 77 K for different compositions and periods. The optical matrix element was calculated and compared with InAs/(In)GaSb superlattices. The InAsSb/InAs structures can be designed with higher or equal matrix elements for longer periods. Finally, the initial optical response data of an unoptimized strain balanced InAs0.79Sb0.21/InAs detector with a 40 nm period are shown. Its cutoff wavelength is 0.15 eV (8.5 μm), in good agreement with the predicted type II transition energy of 0.17 eV. [ABSTRACT FROM AUTHOR]

Published
2012
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13. Modeling of electrical characteristics of midwave type II InAs/GaSb strain layer superlattice diodes.

Author

Gopal, V., Plis, E., Rodriguez, J.-B., Jones, C. E., Faraone, L., and Krishna, S.

Subjects
*SUPERLATTICES, *DIODES, *INDIUM arsenide, *GALLIUM, *ANTIMONY, *DIFFUSION, *LOW temperatures, *OHMIC contacts
Abstract

This paper reports the results of modeling of electrical characteristics of midinfrared type II InAs/GaSb strain layer superlattice (SLS) diode with p-on-n polarity. Bulk based model with the effective band gap of SLS material has been used in modeling of the experimental data. Temperature dependence of zero-bias resistance area product (R0A) and bias dependent dynamic resistance of the diode have been analyzed in detail to investigate dark current contributing mechanisms that are limiting the electrical performance of the diode. R0A of the diode is found to be limited by thermal diffusion currents at higher temperatures and Ohmic shunt resistance contribution limits it at low temperatures ∼82 K. [ABSTRACT FROM AUTHOR]

Published
2008
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14. Midwave infrared type-II InAs/GaSb superlattice detectors with mixed interfaces.

Author

Plis, E., Annamalai, S., Posani, K. T., Krishna, S., Rupani, R. A., and Ghosh, S.

Subjects
*SUPERLATTICES, *SEMICONDUCTORS, *CRYSTALS, *CRYSTALLOGRAPHY, *INTERFACES (Physical sciences), *SURFACES (Physics)
Abstract

We report the growth and fabrication of midwave infrared InAs/GaSb strain layer superlattice (SLS) detectors. Growth of alternate interfaces leads to a reduced strain between the GaSb buffer and SLS (Δa∥/a=-5×10-4), enabling the growth of active regions up to 3 μm (625 periods). The structural, optical, and electrical properties of the active region were characterized using x-ray crystallography and photoluminescence, respectively. p-i-n detectors were grown using 625 periods of 8 ML (monolayer) InAs/8 ML GaSb as the active region. The λcutoff for the detectors was 4.6 μm with a conversion efficiency of 32% at Vb=-0.2 V. Detectivity was obtained using noise power spectral density measurements under 300 K 2π field of view illumination and was equal to 5.2×1010 and 3×1010 cm Hz1/2/W (Vb=-0.02 V, T=80 K) in the white noise and 1/f noise limit (at 50 Hz). [ABSTRACT FROM AUTHOR]

Published
2006
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16. Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors

Author

Takei, Kuniharu, Madsen, Morten, Fang, Hui, Kapadia, Rehan, Chuang, Steven, Kim, Ha Sul, Liu, Chin-Hung, Plis, E., Nah, Junghyo, Krishna, Sanjay, Chueh, Yu-Lun, Guo, Jing, and Javey, Ali

Abstract

As of yet, III–V p-type field-effect transistors (p-FETs) on Si have not been reported, due partly to materials and processing challenges, presenting an important bottleneck in the development of complementary III–V electronics. Here, we report the first high-mobility III–V p-FET on Si, enabled by the epitaxial layer transfer of InGaSb heterostructures with nanoscale thicknesses. Importantly, the use of ultrathin (thickness, ∼2.5 nm) InAs cladding layers results in drastic performance enhancements arising from (i) surface passivation of the InGaSb channel, (ii) mobility enhancement due to the confinement of holes in InGaSb, and (iii) low-resistance, dopant-free contacts due to the type III band alignment of the heterojunction. The fabricated p-FETs display a peak effective mobility of ∼820 cm2/(V s) for holes with a subthreshold swing of ∼130 mV/decade. The results present an important advance in the field of III–V electronics.

Published
2024
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20. Self-Aligned, Extremely High Frequency III-V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates

Author

CALIFORNIA UNIV BERKELEY DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE, Wang, Chuan, Chien, Jun-Chau, Fang, Hui, Takei, Kuniharu, Nah, Junghyo, Plis, E, Krishna, Sanjay, Niknejad, Ali M, Javey, Ali, CALIFORNIA UNIV BERKELEY DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE, Wang, Chuan, Chien, Jun-Chau, Fang, Hui, Takei, Kuniharu, Nah, Junghyo, Plis, E, Krishna, Sanjay, Niknejad, Ali M, and Javey, Ali

Abstract

This paper reports the radio frequency (RF) performance of InAs nanomembrane transistors on both mechanically rigid and flexible substrates. We have employed a self-aligned device architecture by using a T-shaped gate structure to fabricate high performance InAs metal-oxide-semiconductor field effect transistors (MOSFETs) with channel lengths down to 75 nm. RF measurements reveal that the InAs devices made on a silicon substrate exhibit a cutoff frequency (f t) of approx. 165 GHz, which is one of the best results achieved in III-V MOSFETs on silicon. Similarly, the devices fabricated on a bendable polyimide substrate provide a f(t) of approx. 105 GHz, representing the best performance achieved for transistors fabricated directly on mechanically flexible substrates. The results demonstrate the potential of III-V -on-insulator platform for extremely high-frequency (EHF) electronics on both conventional silicon and flexible substrates., Published in the Journal of Nano Letters, v12 n8 p4140-4145, 2012. Supported in part by DARPA, DOE and AFOSR Grant no. FA9550-10-1-0113.

Published
2012

21. Radiation Tolerance Characterization of Dual Band InAs/GaSb Type-II Strain-Layer Superlattice pBp Detectors Using 63 MeV Protons

Author

AIR FORCE RESEARCH LAB KIRTLAND AFB NM SPACE VEHICLES DIRECTORATE, Cowan, V M, Morath, C P, Hubbs, J E, Myers, S, Plis, E, Krishna, S, AIR FORCE RESEARCH LAB KIRTLAND AFB NM SPACE VEHICLES DIRECTORATE, Cowan, V M, Morath, C P, Hubbs, J E, Myers, S, Plis, E, and Krishna, S

Abstract

The radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors of varying size using 63 MeV proton irradiation is presented. The detectors' mid-wave infrared performance degraded with increasing proton fluence PhiP up to 3.75 x 10(exp 12)/sq cm or, equivalently, a total ionizing dose=500 kRad (Si). At this PhiP, an 31% drop in quantum efficiency g, 2 order increase in dark current density JD, and consequently, 1 order drop in calculated detectivity D* were observed. Proton damage factors were determined for g and D*. Arrhenius-analysis of temperature-dependent JD measurements reflected significant changes in the activation energies following irradiation., Applied Physics Letters, v101 article 251108, 2012.

Published
2012

22. Performance Improvement of Long-Wave Infrared InAs/GaSb Strained-Layer Superlattice Detectors Through Sulfur-Based Passivation

Author

NAVAL RESEARCH LAB WASHINGTON DC, Plis, E A, Kutty, M N, Myers, S, Rathi, A, Aifer, E H, Vurgaftman, I, Krishna, S, NAVAL RESEARCH LAB WASHINGTON DC, Plis, E A, Kutty, M N, Myers, S, Rathi, A, Aifer, E H, Vurgaftman, I, and Krishna, S

Abstract

We report on effective sulfur-based passivation treatments of type-II InAs/GaSb strained layer superlattice detectors (100% cut-off wavelength is 9.8 microns at 77 K). The electrical behavior of detectors passivated by electrochemical sulfur deposition (ECP) and thioacetamide (TAM) was evaluated for devices of various sizes. ECP passivated detectors with a perimeter-to-area ratio of 1600/cm exhibited superior performance with surface resistivity in excess of 10(exp 4) ohm cm, dark current density of 2.7 x 10(exp -3) A/sq cm, and specific detectivity improved by a factor of 5 compared to unpassivated devices (VBias = - 0.1 V, 77 K)., To be published in Infrared Physics & Technology, 2012.

Published
2012

28. Low-frequency noise in type-II superlattice MWIR nBn detector

Author

Ciura, L., primary, Kolek, A., additional, Zawislak, Z., additional, Stadler, A. W., additional, Kowalewski, A., additional, Martyniuk, P., additional, Wrobel, J., additional, Rogalski, A., additional, Gautam, N., additional, Plis, E., additional, and Krishna, S., additional

Published
2013
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