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Superconductivity in topological insulators is expected to show very unconventional features such as $p+ip$ order parameter, Majorana fermions etc. However, the intrinsic superconductivity has been observed in a very limited number of materials in which the pairing symmetry is still a matter of debate. Here, we study the topological crystalline insulator (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te, where a peculiar insulator to superconductor transition was previously reported near the gap inversion transition, when the system is nearly a 3-dimensional Dirac semimetal. Both the existence of superconductivity near the 3-dimensional Dirac semimetal and the occurrence of insulator to superconductor transition in an isotropic material is highly unusual. We suggest that the observed phenomena are related to an intrinsic instability of a 3-dimensional Dirac semimetal state in (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te and "flattening" of the bulk valence and conduction bands as they acquire a Mexican hat-like dispersion on the inverted side of the phase diagram. This favors the pairing instability if the chemical potential is pinned to these flat regions., Comment: 9 pages, 5 figures

In high-temperature cuprate superconductors, the anti-ferromagnetic spin fluctuations are thought to have a very important role in naturally producing an attractive interaction between the electrons in the $d$-wave channel. The connection between superconductivity and spin fluctuations is expected to be especially consequential at the overdoped end point of the superconducting dome. In some materials, that point seems to coincide with a Lifshitz transition, where the Fermi surface changes from the hole-like centered at ($\pi, \pi$) to the electron-like, centered at the $\Gamma$ point causing a loss of large momentum anti-ferromagnetic fluctuations. Here, we study the doping dependence of the electronic structure of Bi$_{1.8}$Pb$_{0.4}$Sr$_2$CuO$_{6+\delta}$ in angle-resolved photoemission and find that the superconductivity vanishes at lower doping than at which the Lifshitz transition occurs. This requires a more detailed re-examination of a spin-fluctuation scenario., Comment: 6 pages, 3 Figures, 1 Table

In the present work, we investigate the electronic structure of the two-dimensional (2D) ferromagnet Cr2Ge2Te6 by photoemission spectroscopy and ab initio calculations. Our results demonstrate the presence of multiple hole-type bands in the vicinity of the Fermi level indicating that the material can support high electrical conductivity by manipulating the chemical potential. Also, our photon energy dependent angle resolved photoemission experiment revealed that several of the hole bands exhibit weak dispersion with varied incident photon energy providing experimental signature for its two dimensionality. These findings can pave the way for further studies towards the application of Cr2Ge2Te6 in electronic devices., Comment: 8 pages, 3 figures

We report the temperature-dependent optical conductivity and ARPES studies of the iron-based superconductor (SC) Sr$_{0.67}$Na$_{0.33}$Fe$_2$As$_2$ in the high-temperature tetragonal paramagnetic phase; below the structural and magnetic transitions at $T_{\rm N}\simeq$125 K in the orthorhombic spin-density-wave (SDW)-like phase, and $T_r\simeq$42 K in the reentrant tetragonal double-Q magnetic phase where both charge and SDW order exist; and below the SC transition at $T_c\simeq$10 K. The free-carrier component in the optical conductivity is described by two Drude contributions; one strong and broad, the other weak and narrow. The broad Drude component decreases dramatically below $T_{\rm N}$ and $T_r$, with much of its strength being transferred to a bound excitation in the mid-infrared, while the narrow Drude component shows no anomalies at either of the transitions, actually increasing in strength at low temperature while narrowing dramatically. The behavior of an infrared-active mode suggests zone-folding below $T_r$. Below $T_c$ the dramatic decrease in the low-frequency optical conductivity signals the formation of a SC energy gap. ARPES reveals hole-like bands at the center of the Brillouin zone (BZ), with both electron- and hole-like bands at the corners. Below $T_{\rm N}$, the hole pockets at the center of the BZ decrease in size, consistent with the behavior of the broad Drude component; while below $T_r$ the electron-like bands shift and split, giving rise to a low-energy excitation in the optical conductivity at ~20 meV. The magnetic states, with resulting SDW and charge-SDW order, respectively, lead to a significant reconstruction of the Fermi surface that has profound implications for the transport originating from the electron and hole pockets, but appears to have relatively little impact on the SC in this material., Comment: 11 pages with 6 figures; 7 pages of supplementary material

The effects of structural supermodulation with the period $\lambda \approx26$ \AA \ along the $b$-axis of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ have been observed in photoemission studies from the early days as the presence of diffraction replicas of the intrinsic electronic structure. Although predicted to affect the electronic structure of the Cu-O plane, the influence of supermodulation potential on Cu-O electrons has never been observed in photoemission. In the present study, we clearly see, for the first time, the effects on the Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ electronic structure - we observe a hybridization of the intrinsic bands with the supermodulation replica bands in the form of avoided crossings and a corresponding reconstruction of the Fermi surface. We estimate the hybridization gap, $2\Delta_h\sim25$ meV in the slightly underdoped samples. The hybridization weakens with doping and the anti-crossing can no longer be resolved in strongly overdoped samples. In contrast, the shadow replica, shifted by $(\pi, \pi)$, is found not to hybridize with the original bands within our detection limits., Comment: 6 pages, 4 figures

In cuprate superconductors, the doping of carriers into the parent Mott insulator induces superconductivity and various other phases whose characteristic temperatures are typically plotted versus the doping level $p$. In most materials, $p$ cannot be determined from the chemical composition, but it is derived from the superconducting transition temperature, $T_\mathrm{c}$, using the assumption that $T_\mathrm{c}$ dependence on doping is universal. Here, we present angle-resolved photoemission studies of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$, cleaved and annealed in vacuum or in ozone to reduce or increase the doping from the initial value corresponding to $T_\mathrm{c}=91$ K. We show that $p$ can be determined from the underlying Fermi surfaces and that $in-situ$ annealing allows mapping of a wide doping regime, covering the superconducting dome and the non-superconducting phase on the overdoped side. Our results show a surprisingly smooth dependence of the inferred Fermi surface with doping. In the highly overdoped regime, the superconducting gap approaches the value of $2\Delta_0=(4\pm1)k_\mathrm{B}T_\mathrm{c}$, Comment: 8 pages, 4 figures

The success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust, isoelectronic, and share the same structure with black phosphorus. We measured the band structure of SnSe and found highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across. This is exactly the band structure desired for efficient thermoelectric generation where SnSe has shown a great promise.

We report a new, cleavable, strong-topological-metal, Zr2Te2P, which has the same tetradymite-type crystal structure as the topological insulator Bi2Te2Se. Instead of being a semiconductor, however, Zr2Te2P is metallic with a pseudogap between 0.2 and 0.7 eV above the fermi energy (EF). Inside this pseudogap, two Dirac dispersions are predicted: one is a surface-originated Dirac cone protected by time-reversal symmetry (TRS), while the other is a bulk-originated and slightly gapped Dirac cone with a largely linear dispersion over a 2 eV energy range. A third surface TRS-protected Dirac cone is predicted, and observed using ARPES, making Zr2Te2P the first system to realize TRS-protected Dirac cones at M points. The high anisotropy of this Dirac cone is similar to the one in the hypothetical Dirac semimetal BiO2. We propose that if EF can be tuned into the pseudogap where the Dirac dispersions exist, it may be possible to observe ultrahigh carrier mobility and large magnetoresistance in this material.

A long-standing issue in topological insulator research has been to find a material that provides an ideal platform for characterizing topological surface states without interference from bulk electronic states and can reliably be fabricated as bulk crystals. This material would be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, have high surface state electronic mobility, and be growable as large, high quality bulk single crystals. Here we show that this major materials obstacle in the field is overcome by crystals of lightly Sn-doped Bi1.1Sb0.9Te2S (Sn-BSTS) grown by the Vertical Bridgeman method, which we characterize here via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies of the bulk and surface states, and X-ray diffraction and Raman scattering. We present this new material as a bulk topological insulator that can be reliably grown and studied in many laboratories around the world., Comment: 21 pages, 5 figures

The chiral magnetic effect is the generation of electric current induced by chirality imbalance in the presence of magnetic field. It is a macroscopic manifestation of the quantum anomaly in relativistic field theory of chiral fermions (massless spin $1/2$ particles with a definite projection of spin on momentum) -- a dramatic phenomenon arising from a collective motion of particles and antiparticles in the Dirac sea. The recent discovery of Dirac semimetals with chiral quasi-particles opens a fascinating possibility to study this phenomenon in condensed matter experiments. Here we report on the first observation of chiral magnetic effect through the measurement of magneto-transport in zirconium pentatelluride, ZrTe_5. Our angle-resolved photoemission spectroscopy experiments show that this material's electronic structure is consistent with a 3D Dirac semimetal. We observe a large negative magnetoresistance when magnetic field is parallel with the current. The measured quadratic field dependence of the magnetoconductance is a clear indication of the chiral magnetic effect. The observed phenomenon stems from the effective transmutation of Dirac semimetal into a Weyl semimetal induced by the parallel electric and magnetic fields that represent a topologically nontrivial gauge field background., Comment: 15 pages, 5 figures

The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. A change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior of the magnetoresistance in WTe$_2$ was identified.

Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave superconductors put the hard constraints on these experiments. Significantly larger gaps and higher transition temperatures in cuprate superconductors might be an attractive alternative to considerably relax these constraints, but it is not clear whether the proximity effect would be effective in heterostructures involving cuprates and topological insulators. Here, we present angle-resolved photoemission studies of thin Bi2Se3 films grown in-situ on optimally doped Bi2Sr2CaCu2O8 substrates that show the absence of proximity-induced gaps on the surfaces of Bi2Se3 films as thin as a 1.5 quintuple layer. These results suggest that the superconducting proximity effect between a cuprate superconductor and a topological insulator is strongly suppressed, likely due to a very short coherence length along the c-axis, incompatible crystal and pairing symmetries at the interface, small size of the topological surface state Fermi surface and adverse effects of a strong spin-orbit coupling in the topological material., Comment: Work presented at the March Meeting of American Physical Society in Denver on March 3, 2014

A comparative study of the properties of topological insulator Bi2Te2Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 x 1014 cm-3. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (EF) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, that the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near EF. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed., Comment: 24 pages, 7 figures

Properties of many layered materials, including copper- and iron-based superconductors, topological insulators, graphite and epitaxial graphene can be manipulated by inclusion of different atomic and molecular species between the layers via a process known as intercalation. For example, intercalation in graphite can lead to superconductivity and is crucial in the working cycle of modern batteries and supercapacitors. Intercalation involves complex diffusion processes along and across the layers, but the microscopic mechanisms and dynamics of these processes are not well understood. Here we report on a novel mechanism for intercalation and entrapment of alkali-atoms under epitaxial graphene. We find that the intercalation is adjusted by the van der Waals interaction, with the dynamics governed by defects anchored to graphene wrinkles. Our findings are relevant for the future design and application of graphene-based nano-structures. Similar mechanisms can also play a role for intercalation of layered materials., Comment: 8 pages, 7 figures in published form, supplementary information available

Topological crystalline insulators represent a novel topological phase of matter in which the surface states are protected by discrete point group-symmetries of the underlying lattice. Rock-salt lead-tin-selenide alloy is one possible realization of this phase which undergoes a topological phase transition upon changing the lead content. We used scanning tunneling microscopy (STM) and angle resolved photoemission spectroscopy (ARPES) to probe the surface states on (001) Pb$_{1-x}$Sn$_{x}$Se in the topologically non-trivial (x=0.23) and topologically trivial (x=0) phases. We observed quasiparticle interference with STM on the surface of the topological crystalline insulator and demonstrated that the measured interference can be understood from ARPES studies and a simple band structure model. Furthermore, our findings support the fact that Pb$_{0.77}$Sn$_{0.23}$Se and PbSe have different topological nature., Comment: 5 pages, 4 figures

Angle resolved photoelectron spectroscopy (ARPES) is extensively used to characterize the dependence of the electronic structure of graphene on Ir(111) on the preparation process. ARPES findings reveal that temperature programmed growth alone or in combination with chemical vapor deposition leads to graphene displaying sharp electronic bands. The photoemission intensity of the Dirac cone is monitored as a function of the increasing graphene area. Electronic features of the moir\'e superstructure present in the system, namely minigaps and replica bands are examined and used as robust features to evaluate graphene uniformity. The overall dispersion of the pi-band is analyzed. Finally, by the variation of photon energy, relative changes of the pi- and sigma-band intensities are demonstrated., Comment: 8 pages, 6 figures in published form

Epitaxial graphene on Ir(111) prepared in excellent structural quality is investigated by angle-resolved photoelectron spectroscopy. It clearly displays a Dirac cone with the Dirac point shifted only slightly above the Fermi level. The moire resulting from the overlaid graphene and Ir(111) surface lattices imposes a superperiodic potential giving rise to Dirac cone replicas and the opening of minigaps in the band structure., Comment: 4 pages, 4 figures