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457 results on '"Pintilie L"'

1. Existential Loneliness Among Older People from the Perspective of Health Care Professionals: A European Multicenter Study

Author

Edberg AK, Trogu G, Manattini A, Renn-Żurek A, Modrzejewska DM, Woźnicka EB, Popovici S, Pintilie L, Beck I, Virbalienė A, and Šiurienė A

Subjects
older people, health care professionals, existential loneliness, qualitative, multicenter study, Psychology, BF1-990, Industrial psychology, HF5548.7-5548.85
Abstract

Anna-Karin Edberg,1 Giusy Trogu,2 Alessandra Manattini,2 Agnieszka Renn-Żurek,3 Daria Maria Modrzejewska,3 Elżbieta Barbara Woźnicka,4 Silvia Popovici,5 Liliana Pintilie,6 Ingela Beck,1 Akvilė Virbalienė,7 Aurelija Šiurienė7 1Kristianstad University, Kristianstad, Sweden; 2Anziani e non solo Societá Cooperativa Sociale, Carpi, Italy; 3University of Humanities and Economics, Lodz, Poland; 4Stefan Batory State University, Skierniewice, Poland; 5Asociatia Demetrius, Iasi, Romania; 6Executive Office of the Order of General Nurses, Midwives and Nurses in Romania, Iasi, Romania; 7Klaipeda State University of Applied Sciences, Klaipeda, LithuaniaCorrespondence: Anna-Karin Edberg, Faculty of Health Sciences, Kristianstad University, SE 291 88, Kristianstad, Sweden, Tel +46 44-250 39 75, Email anna-karin.edberg@hkr.seIntroduction: Health care professionals (HCPs) encounter different forms of loneliness in their work. It is essential that they have the courage, skills, and tools to deal with loneliness, in particular with existential loneliness (EL) which relates to meaning in life and the fundamentals of living and dying.Aim: The aim of this study was to investigate HCPs’ views on loneliness among older people and their understanding, perception, and professional experience of EL in older people.Materials and Methods: In all, 139 HCPs from five European countries participated in audio-recorded focus group and individual interviews. The transcribed materials were locally analyzed using a predefined template. The participating countries’ results were then translated, merged, and inductively analyzed using conventional content analysis.Results: Participants described different forms of loneliness – a negative form that is unwanted and causes suffering, and a positive form where solitude is desired and sought. The results showed that the HCPs’ knowledge and understanding of EL varied. The HCPs mainly related EL to different types of loss, eg loss of autonomy, independence, hope, and faith, and to concern alienation, guilt, regret and remorse, and concerns about the future.Discussion and Conclusions: The HCPs expressed a need to improve their sensitivity and self-confidence to engage in existential conversations. They also stated the need to increase their knowledge and understanding of aging, death, and dying. Based on these results, a training program aimed to increase knowledge and understanding of older people’s situation has been developed. The program includes practical training in conversations about emotional and existential aspects, based on recurrent reflections on the topics presented. The program is available at: www.aloneproject.eu.Keywords: older people, health care professionals, existential loneliness, qualitative, multicenter study

Published
2023

2. Healthcare Professionals’ Viewpoint on Existential Loneliness in Older Individuals [Response to Letter]

Author

Edberg AK, Trogu G, Manattini A, Renn-Żurek A, Modrzejewska DM, Woźnicka EB, Popovici S, Pintilie L, Beck I, Virbalienė A, and Šiurienė A

Subjects
le, Psychology, BF1-990, Industrial psychology, HF5548.7-5548.85
Abstract

Anna-Karin Edberg Nursing Kristianstad University, Kristianstad, SwedenCorrespondence: Anna-Karin Edberg, Faculty of Health Sciences, Kristianstad University, Kristianstad, SE 291 88, Sweden, Tel +46 44-250 39 75, Email anna-karin.edberg@hkr.se

Published
2023

7. How measurement protocols influence the dynamic J-V characteristics of perovskite solar cells: theory and experiment

Author

Nemnes, G. A., Besleaga, Cristina, Tomulescu, A. G., Palici, Alexandra, Pintilie, L., Manolescu, A., and Pintilie, Ioana

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

The dynamic effects observed in the J-V measurements represent one important hallmark in the behavior of the perovskite solar cells. Proper measurement protocols (MPs) should be employed for the experimental data reproducibility, in particular for a reliable evaluation of the power conversion efficiency (PCE), as well as for a meaningful characterization of the type and magnitude of the hysteresis. We discuss here several MPs by comparing the experimental J-V characteristics with simulated ones using the dynamic electrical model (DEM). Pre-poling conditions and bias scan rate can have a dramatic influence not only on the apparent solar cell performance, but also on the hysteretic phenomena. Under certain measurement conditions, a hysteresis-free behavior with relatively high PCEs may be observed, although the J-V characteristics may be far away from the stationary case. Furthermore, forward-reverse and reverse-forward bias scans show qualitatively different behaviors regarding the type of the hysteresis, normal and inverted, depending on the bias pre-poling. We emphasize here that correlated forward-reverse or reverse-forward bias scans are essential for a correct assessment of the dynamic hysteresis. In this context, we define a hysteresis index which consistently assigns the hysteresis type and magnitude. Our DEM simulations, supported by experimental data, provide further guidance for an efficient and accurate determination of the stationary J-V characteristics, showing that the type and magnitude of the dynamic hysteresis may be affected by unintentional pre-conditioning in typical experiments., Comment: 11 pages 7, figures

Published
2018

13. Metal-Ferroelectric-Metal heterostructures with Schottky contacts I. Influence of the ferroelectric properties

Author

Pintilie, L. and Alexe, M.

Subjects
Condensed Matter - Materials Science
Abstract

A model for Metal-Ferroelectric-Metal structures with Schottky contacts is proposed. The model adapts the general theories of metal-semiconductor rectifying contacts for the particular case of metal-ferroelectric contact by introducing: the ferroelectric polarization as a sheet of surface charge located at a finite distance from the electrode interface; a deep trapping level of high concentration; the static and dynamic values of the dielectric constant. Consequences of the proposed model on relevant quantities of the Schottky contact such as built-in voltage, charge density and depletion width, as well as on the interpretation of the current-voltage and capacitance-voltage characteristics are discussed in detail., Comment: 14 pages with 4 figures, manuscript under revision at Journal of Applied Physics for more than 1 year (submitted May 2004, first revision September 2004, second revision May 2005)

Published
2005
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17. Orientation-dependent potential barriers in case of epitaxial Pt- BiFeO3 - SrRuO3 capacitors

Author

Pintilie, L, Dragoi, C, Chu, YH, Martin, LW, Ramesh, R, and Alexe, M

Subjects
bismuth compounds, electrodes, ferroelectric capacitors, ferroelectric thin films, leakage currents, permittivity, platinum, pulsed laser deposition, strontium compounds, Applied Physics, Engineering, Physical Sciences
Abstract

The leakage current in epitaxial BiFeO3 capacitors with bottom SrRuO3 and top Pt electrodes, grown by pulsed laser deposition on SrTiO3 (100), SrTiO3 (110), and SrTiO3 (111) substrates, is investigated by current-voltage (I-V) measurements in the 100-300 K temperature range. It is found that the leakage current is interface-limited and strongly dependent on the orientation of the substrate. The potential barriers at the electrode interfaces are estimated to about 0.6, 0.77, and 0.93 eV for the (100), (110), and (111) orientations, respectively. © 2009 American Institute of Physics.

Published
2009

20. Oxide Thin Films and Nano-heterostructures for Microelectronics (MOS Structures, Ferroelectric Materials and Multiferroic Heterostructures)

Author

Pintilie, I., Pintilie, L., Filip, L. D., Nistor, L. C., Ghica, C., Hull, Robert, Series editor, Jagadish, Chennupati, Series editor, Osgood, Richard M., Series editor, Parisi, Jürgen, Series editor, Seong, Tae-Yeon, Series editor, Uchida, Shin-ichi, Series editor, Wang, Zhiming M., Series editor, Kuncser, Victor, editor, and Miu, Lucica, editor

Published
2014
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30. The Role of Interface Defect States in n- and p-Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf0.5Zr0.5O2 Ferroelectric

Author

Boni, G.A. Istrate, C.M. Zacharaki, C. Tsipas, P. Chaitoglou, S. Evangelou, E.K. Dimoulas, A. Pintilie, I. Pintilie, L.

Abstract

The discovery of ferroelectricity in doped HfO2 represents an excellent opportunity to overcome the obstacles in manufacturing reliable ferroelectric field effect transistors (FeFET) for nonvolatile memory applications, considering that HfO2 is compatible with Si and Ge and it is already used in semiconductor industry. The presence of interface defects may have detrimental effects on the operation of FeFETs, so their role is systematically investigated in this study in correlation with the substrate doping. Metal–ferroelectric–semiconductor (MFS) structures are fabricated by depositing Hf0.5Zr0.5O2 (HZO) layers on n-type Ge substrate. Their electric properties are compared with those of MFS structures obtained by depositing HZO on p-type Ge, to study the influence of the doping. It is found that, although the ferroelectric properties of HZO are similar, the capacitance and impedance of the MFS structures behave differently. For n-Ge, the occupation probability of a large number of low-lying interface defect acceptor states, charges the interface negatively which adversely affects the C–V response of the MFS, albeit without harming the ferroelectric (P–V) hysteresis. Although the interface defects do not harm ferroelectricity, they could inhibit inversion in p-type Ge or accumulation in n-type Ge so they should be taken into account when designing Ge FeFET devices. © 2021 Wiley-VCH GmbH

Published
2021

34. Depletion induced depolarization field in Hf1-xZrxO2metal-ferroelectric-semiconductor capacitors on germanium

Author

Zacharaki, C. Tsipas, P. Chaitoglou, S. Evangelou, E.K. Istrate, C.M. Pintilie, L. Dimoulas, A.

Abstract

Germanium Metal-Ferroelectric-Semiconductor (MFS) capacitors based on ferroelectric Hf1-xZrxO2 (HZO) with clean, oxide free Ge/HZO interfaces emerge as an interesting layer structure for the fabrication of ferroelectric field effect transistor (FeFET) non-volatile memory devices. It is shown that, at low temperature (

Published
2020

35. Short-circuit photocurrent in epitaxial lead zirconate-titanate thin films

Author

Pintilie, L., Vrejoiu, I., Rhun, Le G., and Alexe, M.

Subjects
Epitaxy -- Research, Lead compounds -- Structure, Lead compounds -- Electric properties, Dielectric films -- Structure, Dielectric films -- Electric properties, Thin films -- Structure, Thin films -- Electric properties, Physics
Abstract

The short-circuit photocurrent (SC-PHC) in the 200-800 nm wavelength domain was used to investigate the photovoltaic properties of the metal-ferroelectric-metal structures having SrRu[O.sub.3] metal oxide electrodes and Pb(Zr, Ti)[O.sub.3] (PZT) as ferroelectric layer. The band-gap energies evaluated from the PHC spectral distribution for different PZT compositions range between 3.9 to 4.4 eV and it is constantly higher than the reported experimental values on polycrystalline films but agree well with theoretical values.

Published
2007

37. Metal-ferroelectric-metal structures with Schottky contacts. II. Analysis of the experimental current-voltage and capacitance-voltage characteristics of Pb(Zr,Ti)O3 thin films

Author

Pintilie, L., Boerasu, I., Gomes, M.J.M., Zhao, T., Ramesh, R., and Alexe, M.

Subjects
Lead compounds -- Electric properties, Lead compounds -- Magnetic properties, Semiconductor-metal boundaries -- Design and construction, Titanium compounds -- Electric properties, Titanium compounds -- Magnetic properties, Physics
Abstract

A methodology is presented to extract the relevant quantities of a Schottky contact, in the specific case of metal-ferroelectric-metal structures, by using the metal-ferroelectric interface. The models are applied to Pb(Zr, Ti)O3 thin films with different Zr/Ti ratios, fabricated by different deposition methods and having different Schottky contacts.

Published
2005

38. Metal-ferroelectric-metal heterostructures with Schottky contacts. l. Influence of the ferroelectric properties

Author

Pintilie, L. and Alexe, M.

Subjects
Diodes, Schottky-barrier -- Research, Dielectric films -- Electric properties, Thin films -- Electric properties, Semiconductor device, Physics
Abstract

A model is proposed for metal-ferroelectric-metal heterostructures with Schottky contacts. The model adapts the general theories of metal-semiconductor rectifying contacts for the praticular case of metal-ferroelectric contact by introducing the ferroelectric polarization as a sheet of surface charge located at a finite distance from the electrode interface.

Published
2005

46. Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

Author

Fretwurst, E., Adey, J., Al-Ajili, A., Alfieri, G., Allport, P.P., Artuso, M., Assouak, S., Avset, B.S., Barabash, L., Barcz, A., Bates, R., Biagi, S.F., Bilei, G.M., Bisello, D., Blue, A., Blumenau, A., Boisvert, V., Bolla, G., Bondarenko, G., Borchi, E., Borrello, L., Bortoletto, D., Boscardin, M., Bosisio, L., Bowcock, T.J.V., Brodbeck, T.J., Broz, J., Bruzzi, M., Brzozowski, A., Buda, M., Buhmann, P., Buttar, C., Campabadal, F., Campbell, D., Candelori, A., Casse, G., Cavallini, A., Charron, S., Chilingarov, A., Chren, D., Cindro, V., Collins, P., Coluccia, R., Contarato, D., Coutinho, J., Creanza, D., Cunningham, L., Dalla Betta, G.-F., Dawson, I., de Boer, W., De Palma, M., Demina, R., Dervan, P., Dittongo, S., Dolezal, Z., Dolgolenko, A., Eberlein, T., Eremin, V., Fall, C., Fasolo, F., Ferbel, T., Fizzotti, F., Fleta, C., Focardi, E., Forton, E., Garcia, C., Garcia-Navarro, J.E., Gaubas, E., Genest, M.-H., Gill, K.A., Giolo, K., Glaser, M., Goessling, C., Golovine, V., González Sevilla, S., Gorelov, I., Goss, J., Gouldwell Bates, A., Grégoire, G., Gregori, P., Grigoriev, E., Grillo, A.A., Groza, A., Guskov, J., Haddad, L., Härkönen, J., Hauler, F., Hoeferkamp, M., Hönniger, F., Horazdovsky, T., Horisberger, R., Horn, M., Houdayer, A., Hourahine, B., Hughes, G., Ilyashenko, I., Irmscher, K., Ivanov, A., Jarasiunas, K., Johansen, K.M.H., Jones, B.K., Jones, R., Joram, C., Jungermann, L., Kalinina, E., Kaminski, P., Karpenko, A., Karpov, A., Kazlauskiene, V., Kazukauskas, V., Khivrich, V., Khomenkov, V., Kierstead, J., Klaiber-Lodewigs, J., Klingenberg, R., Kodys, P., Kohout, Z., Korjenevski, S., Koski, M., Kozlowski, R., Kozodaev, M., Kramberger, G., Krasel, O., Kuznetsov, A., Kwan, S., Lagomarsino, S., Lassila-Perini, K., Lastovetsky, V., Latino, G., Lazanu, I., Lazanu, S., Lebedev, A., Lebel, C., Leinonen, K., Leroy, C., Li, Z., Lindström, G., Linhart, V., Litovchenko, P., Litovchenko, A., Lo Giudice, A., Lozano, M., Luczynski, Z., Luukka, P., Macchiolo, A., Makarenko, L.F., Mandić, I., Manfredotti, C., Manna, N., Marti i Garcia, S., Marunko, S., Mathieson, K., Melone, J., Menichelli, D., Messineo, A., Metcalfe, J., Miglio, S., Mikuž, M., Miyamoto, J., Moll, M., Monakhov, E., Moscatelli, F., Naoumov, D., Nossarzewska-Orlowska, E., Nysten, J., Olivero, P., Oshea, V., Palviainen, T., Paolini, C., Parkes, C., Passeri, D., Pein, U., Pellegrini, G., Perera, L., Petasecca, M., Piemonte, C., Pignatel, G.U., Pinho, N., Pintilie, I., Pintilie, L., Polivtsev, L., Polozov, P., Popa, A., Popule, J., Pospisil, S., Pozza, A., Radicci, V., Rafí, J.M., Rando, R., Roeder, R., Rohe, T., Ronchin, S., Rott, C., Roy, A., Ruzin, A., Sadrozinski, H.F.W., Sakalauskas, S., Scaringella, M., Schiavulli, L., Schnetzer, S., Schumm, B., Sciortino, S., Scorzoni, A., Segneri, G., Seidel, S., Seiden, A., Sellberg, G., Sellin, P., Sentenac, D., Shipsey, I., Sicho, P., Sloan, T., Solar, M., Son, S., Sopko, B., Sopko, V., Spencer, N., Stahl, J., Stolze, D., Stone, R., Storasta, J., Strokan, N., Sudzius, M., Surma, B., Suvorov, A., Svensson, B.G., Tipton, P., Tomasek, M., Tsvetkov, A., Tuominen, E., Tuovinen, E., Tuuva, T., Tylchin, M., Uebersee, H., Uher, J., Ullán, M., Vaitkus, J.V., Velthuis, J., Verbitskaya, E., Vrba, V., Wagner, G., Wilhelm, I., Worm, S., Wright, V., Wunstorf, R., Yiuri, Y., Zabierowski, P., Zaluzhny, A., Zavrtanik, M., Zen, M., Zhukov, V., and Zorzi, N.

Published
2005
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47. Development of radiation tolerant semiconductor detectors for the Super-LHC

Author

Moll, M., Adey, J., Al-Ajili, A., Alfieri, G., Allport, P.P., Artuso, M., Assouak, S., Avset, B.S., Barabash, L., Barcz, A., Bates, R., Biagi, S.F., Bilei, G.M., Bisello, D., Blue, A., Blumenau, A., Boisvert, V., Bolla, G., Bondarenko, G., Borchi, E., Borrello, L., Bortoletto, D., Boscardin, M., Bosisio, L., Bowcock, T.J.V., Brodbeck, T.J., Broz, J., Bruzzi, M., Brzozowski, A., Buda, M., Buhmann, P., Buttar, C., Campabadal, F., Campbell, D., Candelori, A., Casse, G., Cavallini, A., Charron, S., Chilingarov, A., Chren, D., Cindro, V., Collins, P., Coluccia, R., Contarato, D., Coutinho, J., Creanza, D., Cunningham, W., Dalla Betta, G. -F., Dawson, I., de Boer, W., De Palma, M., Demina, R., Dervan, P., Dittongo, S., Dolezal, Z., Dolgolenko, A., Eberlein, T., Eremin, V., Fall, C., Fasolo, F., Fizzotti, F., Fleta, C., Focardi, E., Forton, E., Fretwurst, E., Garcia, C., Garcia-Navarro, J.E., Gaubas, E., Genest, M. -H., Gill, K.A., Giolo, K., Glaser, M., Goessling, C., Golovine, V., González Sevilla, S., Gorelov, I., Goss, J., Gouldwell Bates, A., Grégoire, G., Gregori, P., Grigoriev, E., Grillo, A.A., Groza, A., Guskov, J., Haddad, L., Härkönen, J., Hauler, F., Hoeferkamp, M., Hönniger, F., Horazdovsky, T., Horisberger, R., Horn, M., Houdayer, A., Hourahine, B., Hughes, G., Ilyashenko, I., Irmscher, K., Ivanov, A., Jarasiunas, K., Johansen, K.M.H., Jones, B.K., Jones, R., Joram, C., Jungermann, L., Kalinina, E., Kaminski, P., Karpenko, A., Karpov, A., Kazlauskiene, V., Kazukauskas, V., Khivrich, V., Khomenkov, V., Kierstead, J., Klaiber-Lodewigs, J., Klingenberg, R., Kodys, P., Kohout, Z., Korjenevski, S., Koski, M., Kozlowski, R., Kozodaev, M., Kramberger, G., Krasel, O., Kuznetsov, A., Kwan, S., Lagomarsino, S., Lassila-Perini, K., Lastovetsky, V., Latino, G., Lazanu, S., Lazanu, I., Lebedev, A., Lebel, C., Leinonen, K., Leroy, C., Li, Z., Lindström, G., Linhart, V., Litovchenko, A., Litovchenko, P., Lo Giudice, A., Lozano, M., Luczynski, Z., Luukka, P., Macchiolo, A., Makarenko, L.F., Mandić, I., Manfredotti, C., Manna, N., Marti i Garcia, S., Marunko, S., Mathieson, K., Melone, J., Menichelli, D., Messineo, A., Metcalfe, J., Miglio, S., Mikuž, M., Miyamoto, J., Monakhov, E., Moscatelli, F., Naoumov, D., Nossarzewska-Orlowska, E., Nysten, J., Olivero, P., OShea, V., Palviainen, T., Paolini, C., Parkes, C., Passeri, D., Pein, U., Pellegrini, G., Perera, L., Petasecca, M., Piemonte, C., Pignatel, G.U., Pinho, N., Pintilie, I., Pintilie, L., Polivtsev, L., Polozov, P., Popa, A., Popule, J., Pospisil, S., Pozza, A., Radicci, V., Rafí, J.M., Rando, R., Roeder, R., Rohe, T., Ronchin, S., Rott, C., Roy, A., Ruzin, A., Sadrozinski, H.F.W., Sakalauskas, S., Scaringella, M., Schiavulli, L., Schnetzer, S., Schumm, B., Sciortino, S., Scorzoni, A., Segneri, G., Seidel, S., Seiden, A., Sellberg, G., Sellin, P., Sentenac, D., Shipsey, I., Sicho, P., Sloan, T., Solar, M., Son, S., Sopko, B., Sopko, V., Spencer, N., Stahl, J., Stolze, D., Stone, R., Storasta, J., Strokan, N., Sudzius, M., Surma, B., Suvorov, A., Svensson, B.G., Tipton, P., Tomasek, M., Tsvetkov, A., Tuominen, E., Tuovinen, E., Tuuva, T., Tylchin, M., Uebersee, H., Uher, J., Ullán, M., Vaitkus, J.V., Velthuis, J., Verbitskaya, E., Vrba, V., Wagner, G., Wilhelm, I., Worm, S., Wright, V., Wunstorf, R., Yiuri, Y., Zabierowski, P., Zaluzhny, A., Zavrtanik, M., Zen, M., Zhukov, V., and Zorzi, N.

Published
2005
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48. Radiation-hard semiconductor detectors for SuperLHC

Author

Bruzzi, M., Adey, J., Al-Ajili, A., Alexandrov, P., Alfieri, G., Allport, P.P., Andreazza, A., Artuso, M., Assouak, S., Avset, B.S., Barabash, L., Baranova, E., Barcz, A., Basile, A., Bates, R., Belova, N., Biagi, S.F., Bilei, G.M., Bisello, D., Blue, A., Blumenau, A., Boisvert, V., Bolla, G., Bondarenko, G., Borchi, E., Borrello, L., Bortoletto, D., Boscardin, M., Bosisio, L., V. Bowcock, T.J., Brodbeck, T.J., Broz, J., Brukhanov, A., Brzozowski, A., Buda, M., Buhmann, P., Buttar, C., Campabadal, F., Campbell, D., Candelori, A., Casse, G., Cavallini, A., Chilingarov, A., Chren, D., Cindro, V., Citterio, M., Collins, P., Coluccia, R., Contarato, D., Coutinho, J., Creanza, D., Cunningham, W., Cvetkov, V., Dalla Betta, G.-F., Davies, G., Dawson, I., de Boer, W., De Palma, M., Demina, R., Dervan, P., Dierlamm, A., Dittongo, S., Dobrzanski, L., Dolezal, Z., Dolgolenko, A., Eberlein, T., Eremin, V., Fall, C., Fasolo, F., Ferbel, T., Fizzotti, F., Fleta, C., Focardi, E., Forton, E., Franchenko, S., Fretwurst, E., Gamaz, F., Garcia, C., Garcia-Navarro, J.E., Gaubas, E., Genest, M.-H., Gill, K.A., Giolo, K., Glaser, M., Goessling, C., Golovine, V., González Sevilla, S., Gorelov, I., Goss, J., Gouldwell, A., Grégoire, G., Gregori, P., Grigoriev, E., Grigson, C., Grillo, A., Groza, A., Guskov, J., Haddad, L., Härkönen, J., Harding, R., Hauler, F., Hayama, S., Hoeferkamp, M., Hönniger, F., Horazdovsky, T., Horisberger, R., Horn, M., Houdayer, A., Hourahine, B., Hruban, A., Hughes, G., Ilyashenko, I., Irmscher, K., Ivanov, A., Jarasiunas, K., Jin, T., Jones, B.K., Jones, R., Joram, C., Jungermann, L., Kalinina, E., Kaminski, P., Karpenko, A., Karpov, A., Kazlauskiene, V., Kazukauskas, V., Khivrich, V., Khomenkov, V., Kierstead, J., Klaiber-Lodewigs, J., Kleverman, M., Klingenberg, R., Kodys, P., Kohout, Z., Korjenevski, S., Kowalik, A., Kozlowski, R., Kozodaev, M., Kramberger, G., Krasel, O., Kuznetsov, A., Kwan, S., Lagomarsino, S., Lari, T., Lassila-Perini, K., Lastovetsky, V., Latino, G., Latushkin, S., Lazanu, S., Lazanu, I., Lebel, C., Leinonen, K., Leroy, C., Li, Z., Lindström, G., Lindstrom, L., Linhart, V., Litovchenko, A., Litovchenko, P., Litvinov, V., Lo Giudice, A., Lozano, M., Luczynski, Z., Luukka, P., Macchiolo, A., Mainwood, A., Makarenko, L.F., Mandić, I., Manfredotti, C., Marti i Garcia, S., Marunko, S., Mathieson, K., Mozzanti, A., Melone, J., Menichelli, D., Meroni, C., Messineo, A., Miglio, S., Mikuž, M., Miyamoto, J., Moll, M., Monakhov, E., Moscatelli, F., Murin, L., Nava, F., Naoumov, D., Nossarzewska-Orlowska, E., Nummela, S., Nysten, J., Olivero, P., Oshea, V., Palviainen, T., Paolini, C., Parkes, C., Passeri, D., Pein, U., Pellegrini, G., Perera, L., Petasecca, M., Piatkowski, B., Piemonte, C., Pignatel, G.U., Pinho, N., Pintilie, I., Pintilie, L., Polivtsev, L., Polozov, P., Popa, A.I., Popule, J., Pospisil, S., Pucker, G., Radicci, V., Rafí, J.M., Ragusa, F., Rahman, M., Rando, R., Roeder, R., Rohe, T., Ronchin, S., Rott, C., Roy, P., Roy, A., Ruzin, A., Ryazanov, A., Sadrozinski, H.F.W., Sakalauskas, S., Scaringella, M., Schiavulli, L., Schnetzer, S., Schumm, B., Sciortino, S., Scorzoni, A., Segneri, G., Seidel, S., Seiden, A., Sellberg, G., Sellin, P., Sentenac, D., Shipsey, I., Sicho, P., Sloan, T., Solar, M., Son, S., Sopko, B., Spencer, N., Stahl, J., Stavitski, I., Stolze, D., Stone, R., Storasta, J., Strokan, N., Strupinski, W., Sudzius, M., Surma, B., Suuronen, J., Suvorov, A., Svensson, B.G., Tipton, P., Tomasek, M., Troncon, C., Tsvetkov, A., Tuominen, E., Tuovinen, E., Tuuva, T., Tylchin, M., Uebersee, H., Uher, J., Ullán, M., Vaitkus, J.V., Vanni, P., Velthuis, J., Verzellesi, G., Verbitskaya, E., Vrba, V., Wagner, G., Wilhelm, I., Worm, S., Wright, V., Wunstorf, R., Zabierowski, P., Zaluzhny, A., Zavrtanik, M., Zen, M., Zhukov, V., and Zorzi, N.

Published
2005
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49. Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition

Author

Zacharaki, C. Tsipas, P. Chaitoglou, S. Fragkos, S. Axiotis, M. Lagoyiannis, A. Negrea, R. Pintilie, L. Dimoulas, A.

Abstract

Plasma assisted atomic oxygen deposition was used to grow polycrystalline ferroelectric Hf1-xZrxO2 (x = 0.5-0.7) on technologically important (100) Germanium substrates showing sharp crystalline interfaces free of interfacial amorphous layers and strong evidence for the presence of a predominately orthorhombic phase. The electrical properties, evaluated using metal-ferroelectric-semiconductor (MFS) capacitors, show symmetric and robust ferroelectric hysteresis with weak or no wake-up effects. The MFS capacitors with x = 0.58 show very large remanent polarization up to 34.4 μC/cm2 or 30.6 μC/cm2 after correction for leakage and parasitics, combined with good endurance reaching 105 cycles at a cycling field of 2.3 MV/cm. The results show good prospects for the fabrication of Ge ferroelectric field effect transistors (FeFETs) for use in 1 T FeFET embedded nonvolatile memory cells with improved endurance. © 2019 Author(s).

Published
2019

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