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341 results on '"Pintilie, Lucian"'

1. Epitaxial Ferroelectric Thin Films: Potential for New Applications

Author

Chirila, Cristina, primary, G. Boni, Andra, additional, D. Filip, Lucian, additional, Botea, Mihaela, additional, Popescu, Dana, additional, Stancu, Viorica, additional, Trupina, Lucian, additional, Hrib, Luminita, additional, Negrea Ioana Pintilie, Raluca, additional, and Pintilie, Lucian, additional

Published
2024
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3. Analysis of an Independent Double-Boost Interleaved Converter Operating as Power Optimizer in a PV Application

Author

Suciu, Vasile Mihai, Pintilie, Lucian Nicolae, Teodosescu, Petre Dorel, Mathe, Zsolt, Kacprzyk, Janusz, Series Editor, Gomide, Fernando, Advisory Editor, Kaynak, Okyay, Advisory Editor, Liu, Derong, Advisory Editor, Pedrycz, Witold, Advisory Editor, Polycarpou, Marios M., Advisory Editor, Rudas, Imre J., Advisory Editor, Wang, Jun, Advisory Editor, Yang, Xin-She, editor, Sherratt, Simon, editor, Dey, Nilanjan, editor, and Joshi, Amit, editor

Published
2023
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4. AC-DC Microgrid Analysis Using a Hybrid Real-Time HiL Approach

Author

Iuoras, Adrian Mihai, Salcu, Sorin Ionuț, Suciu, Vasile Mihai, Pintilie, Lucian Nicolae, Szekely, Norbert Csaba, Bojan, Mircea, Teodosescu, Petre Dorel, Kacprzyk, Janusz, Series Editor, Gomide, Fernando, Advisory Editor, Kaynak, Okyay, Advisory Editor, Liu, Derong, Advisory Editor, Pedrycz, Witold, Advisory Editor, Polycarpou, Marios M., Advisory Editor, Rudas, Imre J., Advisory Editor, Wang, Jun, Advisory Editor, Yang, Xin-She, editor, Sherratt, Simon, editor, Dey, Nilanjan, editor, and Joshi, Amit, editor

Published
2023
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5. Analysis of an Independent Double Boost Interleaved Converter in a Renewable Energy Application

Author

Suciu, Vasile Mihai, Pintilie, Lucian Nicolae, Salcu, Sorin Ionuț, Teodosescu, Petre Dorel, Pana, Teodor, Mathe, Zsolt, Kacprzyk, Janusz, Series Editor, Gomide, Fernando, Advisory Editor, Kaynak, Okyay, Advisory Editor, Liu, Derong, Advisory Editor, Pedrycz, Witold, Advisory Editor, Polycarpou, Marios M., Advisory Editor, Rudas, Imre J., Advisory Editor, Wang, Jun, Advisory Editor, Yang, Xin-She, editor, Sherratt, Simon, editor, Dey, Nilanjan, editor, and Joshi, Amit, editor

Published
2023
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6. Grain size-driven effect on the functional properties in Ba0.6Sr0.4TiO3 ceramics consolidated by spark plasma sintering

Author

Pătru, Roxana-Elena, Stanciu, Cătălina Andreea, Soare, Elena Mirabela, Surdu, Vasile-Adrian, Truşcă, Roxana Doina, Nicoară, Adrian Ionuţ, Vasile, Bogdan Ştefan, Boni, Georgia, Amarande, Luminiţa, Horchidan, Nadejda, Curecheriu, Lavinia Petronela, Mitoşeriu, Liliana, Pintilie, Lucian, Pintilie, Ioana, and Ianculescu, Adelina-Carmen

Published
2023
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7. Chapter Charge Transport in Ferroelectric Thin Films

Author

Pintilie, Lucian

Subjects
Mathematics & science, bic Book Industry Communication::P Mathematics & science::PH Physics::PHF Materials / States of matter::PHFC Condensed matter physics (liquid state & solid state physics)
Abstract

Materials / States of matter

Published
2011
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12. Normal and inverted hysteresis in perovskite solar cells

Author

Nemnes, George Alexandru, Besleaga, Cristina, Stancu, Viorica, Leonat, Lucia Nicoleta, Pintilie, Lucian, Torfason, Kristinn, Ilkov, Marjan, Manolescu, Andrei, and Pintilie, Ioana

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

Hysteretic effects are investigated in perovskite solar cells in the standard FTO/TiO$_2$/CH$_3$NH$_3$PbI$_{3-x}$Cl$_x$/spiro-OMeTAD/Au configuration. We report normal (NH) and inverted hysteresis (IH) in the J-V characteristics occurring for the same device structure, the behavior strictly depending on the pre-poling bias. NH typically appears at pre-poling biases larger than the open circuit bias, while pronounced IH occurs for negative bias pre-poling. The transition from NH to IH is marked by a intermediate mixed hysteresis behavior characterized by a crossing point in the J-V characteristics. The measured J-V characteristics are explained quantitatively by the dynamic electrical model (DEM). Furthermore, the influence of the bias scan rate on the NH/IH hysteresis is discussed based on the time evolution of the non-linear polarization. Introducing a three step measurement protocol, which includes stabilization, pre-poling and measurement, we put forward the difficulties and possible solutions for a correct PCE evaluation., Comment: 11 pages, 10 figures

Published
2017

19. Dynamic electrical behavior of halide perovskite based solar cells

Author

Nemnes, George Alexandru, Besleaga, Cristina, Tomulescu, Andrei Gabriel, Pintilie, Ioana, Pintilie, Lucian, Torfason, Kristinn, and Manolescu, Andrei

Subjects
Condensed Matter - Materials Science
Abstract

A dynamic electrical model is introduced to investigate the hysteretic effects in the I-V characteristics of perovskite based solar cells. By making a simple ansatz for the polarization relaxation, our model is able to reproduce qualitatively and quantitatively detailed features of measured I-V characteristics. Pre-poling effects are discussed, pointing out the differences between initially over- and under-polarized samples. In particular, the presence of the current over-shoot observed in the reverse characteristics is correlated with the solar cell pre-conditioning. Furthermore, the dynamic hysteresis is analyzed with respect to changing the bias scan rate, the obtained results being consistent with experimentally reported data: the hysteresis amplitude is maximum at intermediate scan rates, while at very slow and very fast ones it becomes negligible. The effects induced by different relaxation time scales are assessed. The proposed dynamic electrical model offers a comprehensive view of the solar cell operation, being a practical tool for future calibration of tentative microscopic descriptions., Comment: 8 pages, 6 figures, Supplemental material, to appear in Solar Energy Materials & Solar Cells

Published
2016
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27. Epitaxial thin films of the multiferroic double perovskite Bi2FeCrO6 grown on (100)-oriented SrTiO3 substrates: Growth, characterization, and optimization

Author

Nechache, Riad, Harnagea, Catalin, Carignan, Louis-Philippe, Gautreau, Olivier, Pintilie, Lucian, Singh, Mangala P., Menard, David, Fournier, Patrick, Alexe, Marin, and Pignolet, Alain

Subjects
Condensed Matter - Materials Science
Abstract

The influence of the deposition pressure PO2 and substrate temperature TS during the growth of Bi2FeCrO6 thin films grown by pulsed laser deposition has been investigated. It is found that the high volatility of Bi makes the deposition very difficult and that the growth of pure Bi2FeCrO6 thin films on SrTiO3 substrates is possible only in a narrow deposition parameter window. We find that the pure Bi2FeCrO6 phase is formed within a narrow window around an oxygen pressure PO2 =1.210-2 mbar and around a substrate temperature TS=680 degC. At lower temperature or higher pressure, Bi7.38Cr0.62O12+x_also called (b*Bi2O3)and Bi2Fe4O9 /Bi2(Fe,Cr)4O9+x phases are detected, while at lower pressure or higher temperature a (Fe,Cr)3O4 phase forms. Some of these secondary phases are not well known and have not been previously studied. We previously reported Fe/Cr cation ordering as the probable origin of the tenfold improvement in magnetization at saturation of our Bi2FeCrO6 film, compared to BiFeO3. Here, we address the effect of the degree of cationic ordering on the magnetic properties of the Bi2FeCrO6 single phase. Polarization measurements at room temperature reveal that our Bi2FeCrO6 films have excellent ferroelectric properties with ferroelectric hysteresis loops exhibiting a remanent polarization as high as 55-60 miroC/cm2 along the pseudocubic (001) direction., Comment: Manuscript accepted for publication in J. Appl. Phys (ISIF conference- multiferroics special issue)

Published
2009
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30. Electronic Synapses Enabled by an Epitaxial SrTiO3‐δ / Hf0.5Zr0.5O2 Ferroelectric Field‐Effect Memristor Integrated on Silicon

Author

Siannas, Nikitas, primary, Zacharaki, Christina, additional, Tsipas, Polychronis, additional, Kim, Dong Jik, additional, Hamouda, Wassim, additional, Istrate, Cosmin, additional, Pintilie, Lucian, additional, Schmidbauer, Martin, additional, Dubourdieu, Catherine, additional, and Dimoulas, Athanasios, additional

Published
2023
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31. Intrinsic ferroelectric properties of strained tetragonal PbZr0.2Ti0.8O3 obtained on layer-by-layer grown, defect-free single crystalline films

Author

Vrejoiu, Ionela, Rhun, Gwenael Le, Pintilie, Lucian, Hesse, Dietrich, Alexe, Marin, and Goesele, Ulrich

Subjects
Condensed Matter - Materials Science
Abstract

PbZrxTi1-xO3 (PZT) is one of the technologically most important ferroelectric materials. Bulk single-domain single crystals of PZT have never been synthesized for a significant compositional range across the solid-solution phase diagram. This leaves the fundamental properties of PZT under debate. Synthesis of defect-free single crystalline films enables us to unambiguously determine the intrinsic quantities that describe ferroelectric materials, such as spontaneous polarization and dielectric constant. Defect-free single crystalline, strained PbZr0.2Ti0.8O3 thin films were grown by pulsed-laser deposition (PLD) onto vicinal SrTiO3 (001) single crystal substrates. Single crystalline SrRuO3 films fabricated by PLD were employed as bottom electrode. The PZT films have square shape hysteresis loops and remnant polarization values of up to Pr= 110 micro C/cm2, which is considerably higher than the theoretical value predicted for (unstrained) bulk single crystalline PZT of the investigated composition. The films have a dielectric constant eps33= 90 and a piezoelectric coefficient d33= 50 pm/V., Comment: 15 pages, 3 figures

Published
2006
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34. Energy Conversion Optimization Method in Nano-Grids Using Variable Supply Voltage Adjustment Strategy Based on a Novel Inverse Maximum Power Point Tracking Technique (iMPPT)

Author

Pintilie, Lucian Nicolae, primary, Hedeșiu, Horia Cornel, additional, Rusu, Călin Gheorghe, additional, Teodosescu, Petre Dorel, additional, Mărginean, Călin Ignat, additional, Salcu, Sorin Ionuț, additional, Suciu, Vasile Mihai, additional, Szekely, Norbert Csaba, additional, and Păcuraru, Alexandru Mădălin, additional

Published
2023
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36. Electronic Synapses Enabled by an Epitaxial SrTiO3‐δ / Hf0.5Zr0.5O2 Ferroelectric Field‐Effect Memristor Integrated on Silicon.

Author

Siannas, Nikitas, Zacharaki, Christina, Tsipas, Polychronis, Kim, Dong Jik, Hamouda, Wassim, Istrate, Cosmin, Pintilie, Lucian, Schmidbauer, Martin, Dubourdieu, Catherine, and Dimoulas, Athanasios

Subjects
SYNAPSES, FERROELECTRIC devices, DOPED semiconductors, METALLIC oxides, FERROELECTRIC materials, LONG-term memory
Abstract

Synapses play a vital role in information processing, learning, and memory formation in the brain. By emulating the behavior of biological synapses, electronic synaptic devices hold the promise of enabling high‐performance, energy‐efficient, and scalable neuromorphic computing. Ferroelectric memristive devices integrate the characteristics of both ferroelectric and memristive materials and present a far‐reaching potential as artificial synapses. Here, it is reported on a new ferroelectric device on silicon, a field‐effect memristor, consisting of an epitaxial ultrathin ferroelectric Hf0.5Zr0.5O2 film sandwiched between an epitaxial highly doped oxide semiconductor SrTiO3‐δ and a top metal. Upon a low voltage of less than 2 V, the field‐effect modulation in the semiconductor enables to access multiple states. The device works in a large time domain ranging from milliseconds down to tens of nanoseconds. By gradually switching the polarization by identical pulses, the ferroelectric diode devices can dynamically adjust the synaptic strength to mimic short‐ and long‐term memory plasticity. Ionic contributions due to redox processes in the oxide semiconductor beneficially influence the device operation and retention. [ABSTRACT FROM AUTHOR]

Published
2024
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43. Influence of Grain Size on Dielectric Behavior in Lead-Free 0.5 Ba(Zr 0.2 Ti 0.8)O 3 –0.5 (Ba 0.7 Ca 0.3)TiO 3 Ceramics.

Author

Ene, Vladimir Lucian, Lupu, Valentin Razvan, Condor, Claudiu Vasile, Patru, Roxana Elena, Hrib, Luminita Mirela, Amarande, Luminita, Nicoara, Adrian Ionut, Pintilie, Lucian, and Ianculescu, Adelina-Carmen

Subjects
GRAIN size, CERAMICS, DIELECTRICS, DIELECTRIC properties, DIELECTRIC loss, DIELECTRIC materials
Abstract

Fine-tuning of grain sizes can significantly influence the interaction between different dielectric phenomena, allowing the development of materials with tailored dielectric resistivity. By virtue of various synthesis mechanisms, a pathway to manipulate grain sizes and, consequently, tune the material's dielectric response is revealed. Understanding these intricate relationships between granulation and dielectric properties can pave the way for designing and optimizing materials for specific applications where tailored dielectric responses are sought. The experimental part involved the fabrication of dense BCT-BZT ceramics with different grain sizes by varying the synthesis (conventional solid-state reaction route and sol-gel) and consolidation methods. Both consolidation methods produced well-crystallized specimens, with Ba0.85Ca0.15O3Ti0.9Zr0.1 (BCTZ) perovskite as the major phase. Conventional sintering resulted in microstructured and submicron-structured BCT-BZT ceramics, with average grain sizes of 2.35 μm for the solid-state sample and 0.91 μm for the sol-gel synthesized ceramic. However, spark plasma sintering produced a nanocrystalline specimen with an average grain size of 67.5 nm. As the grain size decreases, there is a noticeable decrease in the maximum permittivity, a significant reduction in dielectric losses, and a shifting of the Curie temperature towards lower values. [ABSTRACT FROM AUTHOR]

Published
2023
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47. Influence of Ferroelectric Filler Size and Clustering on the Electrical Properties of (Ag–BaTiO3)–PVDF Sub-Percolative Hybrid Composites

Author

Padurariu, Leontin, primary, Horchidan, Nadejda, additional, Ciomaga, Cristina Elena, additional, Curecheriu, Lavinia Petronela, additional, Lukacs, Vlad Alexandru, additional, Stirbu, Radu Stefan, additional, Stoian, George, additional, Botea, Mihaela, additional, Florea, Mihaela, additional, Maraloiu, Valentin Adrian, additional, Pintilie, Lucian, additional, Rotaru, Aurelian, additional, and Mitoseriu, Liliana, additional

Published
2023
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48. Experimental Band Structure of Pb(Zr,Ti)O 3 : Mechanism of Ferroelectric Stabilization

Author

Popescu, Dana Georgeta, primary, Husanu, Marius Adrian, additional, Constantinou, Procopios Christou, additional, Filip, Lucian Dragos, additional, Trupina, Lucian, additional, Bucur, Cristina Ioana, additional, Pasuk, Iuliana, additional, Chirila, Cristina, additional, Hrib, Luminita Mirela, additional, Stancu, Viorica, additional, Pintilie, Lucian, additional, Schmitt, Thorsten, additional, Teodorescu, Cristian Mihail, additional, and Strocov, Vladimir N., additional

Published
2023
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49. Surface charge dynamics on air-exposed ferroelectric Pb(Zr,Ti)O3(001) thin films

Author

Abramiuc, Laura E., primary, Tănase, Liviu C., additional, Prieto, Mauricio J., additional, de Souza Caldas, Lucas, additional, Tiwari, Aarti, additional, Apostol, Nicoleta G., additional, Huşanu, Marius A., additional, Chirilă, Cristina F., additional, Trupină, Lucian, additional, Schmidt, Thomas, additional, Pintilie, Lucian, additional, and Teodorescu, Cristian M., additional

Published
2023
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