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The efficiency of organic solar cells has raised drastically in the past years. However, there is an undeniable lack of hole transport layers that can provide high carrier selectivity, low defect density, and high processing robustness, simultaneously. In this work, this issue is addressed by studying defect generation and surface passivation of nickel oxide (NiOx). It is revealed that the generation of high oxidation state species on NiOx surface lowers contact resistance but hinders charge extraction when employed as transport layer in organic solar cells. By using them as coordination centers, a straightforward surface modification strategy is implemented using (2‐(9H‐carbazol‐9‐yl)ethyl)phosphonic acid (2PACz) that enhances charge extraction and increases the solar cell efficiency from 11.46% to 17.12%. Additionally, the robustness of this modification across different deposition methods of the carbazole molecule is demonstrated. Finally, by fine‐tuning the Fermi level using various carbazole‐based molecules, and in particular with ((4‐(7H‐dibenzo[c,g]carbazol‐7‐yl)butyl)phosphonic acid (4PADCB), a power conversion efficiency of 17.29% is achieved, with an outstanding combination of a VOC of 0.888 V and a fill factor of 80%. [ABSTRACT FROM AUTHOR]

Lead chalcogenide colloidal quantum dots are one of the most promising materials to revolutionize the field of short-wavelength infrared optoelectronics due to their bandgap tunability and strong absorption. By self-assembling these quantum dots into ordered superlattices, mobilities approaching those of the bulk counterparts can be achieved while still retaining their original optical properties. The recent literature focused mostly on PbSe-based superlattices, but PbS quantum dots have several advantages, including higher stability. In this work, we demonstrate highly ordered 3D superlattices of PbS quantum dots with tunable thickness up to 200 nm and high coherent ordering, both in-plane and along the thickness. We show that we can successfully exchange the ligands throughout the film without compromising the ordering. The superlattices as the active material of an ion gel-gated field-effect transistor achieve electron mobilities up to 220 cm 2 V -1 s -1 . To further improve the device performance, we performed a postdeposition passivation with PbI 2 , which noticeably reduced the subthreshold swing making it reach the Boltzmann limit. We believe this is an important proof of concept showing that it is possible to overcome the problem of high trap densities in quantum dot superlattices enabling their application in optoelectronic devices.