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Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based electronic devices typically requires graphene transfer from its growth substrate to another desired substrate. This key step for device integration must be applicable at the wafer level and meet the stringent requirements of semiconductor fabrication lines. In this work, wet and semidry transfer (i.e. wafer bonding) are evaluated regarding wafer scalability, handling, potential for automation, yield, contamination, and electrical performance. A wafer scale tool is developed to transfer graphene from 150 mm copper foils to 200 mm silicon wafers without adhesive intermediate polymers. The transferred graphene coverage ranges from 97.9 % to 99.2 % for wet transfer and from 17.2 % to 90.8 % for semidry transfer, with average copper contaminations of 4.7 × 1013 (wet) and 8.2 × 1012 atoms/cm2 (semidry). The corresponding electrical sheet resistance extracted from terahertz timedomain spectroscopy varied from 450 to 550 O sq-1 for wet transfer and from 1000 to 1650 O sq-1 for semidry transfer. Although the wet transfer is superior in terms of yield, carbon contamination level, and electrical quality, wafer bonding yields lower copper contamination levels and provides scalability due to existing industrial tools and processes. Our conclusions can be generalized to all 2D materials. [ABSTRACT FROM AUTHOR]

Covers information on a study which discussed the development of a partially depleted silicon-on-insulator (PDSOI) complementary metal oxide semiconductor (CMOS) technology employing pocket implantation and a self-aligned titanium silicidation. Fabrication process of the the PDSOI CMOS; Overview of the advanced isolation process; Description of the device; Conclusion.

Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe2), an exciting and unexplored 2D transition metal dichalcogenide material, is particularly interesting because its low temperature growth process is scalable and compatible with silicon technology. Here, we report the potential of thin PtSe2 films as electromechanical piezoresistive sensors. All experiments have been conducted with semimetallic PtSe2 films grown by thermally assisted conversion of platinum at a complementary metal-oxide-semiconductor (CMOS)-compatible temperature of 400 °C. We report high negative gauge factors of up to -85 obtained experimentally from PtSe2 strain gauges in a bending cantilever beam setup. Integrated NEMS piezoresistive pressure sensors with freestanding PMMA/PtSe2 membranes confirm the negative gauge factor and exhibit very high sensitivity, outperforming previously reported values by orders of magnitude. We employ density functional theory calculations to understand the origin of the measured negative gauge factor. Our results suggest PtSe2 as a very promising candidate for future NEMS applications, including integration into CMOS production lines. [ABSTRACT FROM AUTHOR]

Control of the clutch position is a crucial point for automating manual transmissions. Here, an electrohydraulic clutch position control system is considered. Based on the flatness approach, a nonlinear feedforward control is designed, which is combined with a linear feedback control and implemented on a standard transmission control unit. Experiments with a Mercedes-Benz Sprinter and a Mercedes-Benz CLK prove that this new control system is significantly superior to conventional control concepts, and provides an accurate trajectory tracking of the clutch position. [Copyright &y& Elsevier]