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Reverse breakdown in Cu(In,Ga)S e 2 (CIGS) solar cells can lead to defect creation and performance degradation. We present pulsed reverse-bias experiments, where we stress CIGS solar cells with a short reverse voltage pulse of ten milliseconds and detect the electrical and thermal response of the cell. This way, we limit the duration of the reverse stress, allowing us to study the initial stages of reverse-bias defect creation in CIGS solar cells and modules. Our results show that permanent damage can develop very fast in under milliseconds. Furthermore, we find the location of defect creation as well as the susceptibility to defect creation under reverse bias depends strongly on whether the cell is encapsulated or not, where encapsulated cells are generally more robust against reverse bias. [ABSTRACT FROM AUTHOR]

Thin-film Cu(In,Ga)Se2 modules are investigated by electro-modulated luminescence with bias illumination. The large signal analysis enables the determination of the average current density/voltage (J/V) characteristics of individual cell-stripes in a module, without contacting each individual cell. It was found that the characteristics determined from electro-modulated photo-luminescence measurements differ from the characteristics determined without bias illumination via electro-luminescence. As a reason for this, we found the non-linear relation of the local current to the local voltage which makes the determination of the cell voltage via an average of the local voltages determined from electro-luminescence images incorrect especially at high injection currents. A second analysis method using the small signal response of electro-modulated photo-luminescence was also analyzed. Recently, a method based on such a small signal analysis was demonstrated that yields the local photocurrent collection efficiency. This contribution presents the first application of this method to solar modules with series connected cells rather than the previously shown analysis of single cells. We compare two ways to evaluate the photocurrent collection efficiency from the small signal analysis and discuss how applicable these measurements are to modules. We find that the photocurrent collection efficiency of modules gives valuable information about how defective cells act within a module and which parts of the module limit the overall current through the module. [ABSTRACT FROM AUTHOR]

We present the electroluminescence and quantum efficiency of three different types of thin-film solar cells based on absorbers made from Cu(In,Ga)Se2 as well as from µc-Si:H and a-Si:H. Simulations of our experimental results show that the main contribution to the electroluminescence spectrum originates from band-to-tail transitions in the case of Cu(In,Ga)Se2, from tail-to-tail transitions in µc-Si:H, and from tail-to-tail as well as from band-to-midgap-defect transitions in a-Si:H. By comparing the electroluminescence with the quantum efficiency, we analyze the effect of localized states on the optoelectronic reciprocity relation in the three material systems. The relatively steep band--tail density of states in Cu(In,Ga)Se2 is compatible with the reciprocity relation at room temperature while the shallower band--tail density of states in µc-Si:H and the deep mid-gap defect states in a-Si:H lead to substantial deviations from the reciprocity. [ABSTRACT FROM AUTHOR]