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359 results on '"Phillipp, F."'

17. Thermal stability of stacked self-assembled InP quantum dots in GalnP

Author

Jin-Phillip, N.Y., Du, K., Phillipp, F., Zundel, M., and Eberl, K.

Subjects
Electron microscopy -- Usage, Phosphorus -- Thermal properties, Indium -- Thermal properties, Gallium -- Thermal properties, Physics
Abstract

Quantitative high-resolution electron microscopy (QHREM) has revealed an anisotropic thermal instability of vertically stacked InP quantum dots (QD) embedded in GaInP during rapid thermal annealing (RTA). This phenomenon is due to the strain-assisted interdiffusion.

Published
2002

27. Implantation-induced disordering of CuPtbeta-ordered GainP

Author

Burkard, M., Englert, A., Geng, C., Muhe, A., Scholz, F., Schweizer, H., and Phillipp, F.

Subjects
Ion implantation -- Research, Annealing -- Research, Simulated annealing (Mathematics) -- Methods, Physics
Abstract

The implantation-induced disordering of CuPtbeta-ordered quantum GainP and its microstructure are considered. Implantation defects mediate implantation-induced disordering and can be identified using defect annealing modelling techniques. The disordering process is associated with an activation energy of 2.15 eV. Masked implantation of lateral order/disorder structures were established after high resolution electron beam lithography techniques were used to make wire and dot implantation masks of 35 nanometers wide.

Published
1997

44. Photoluminescence of mesoporous silica molecular sieves

Author

Zhang, Y., Phillipp, F., Meng, G.W., Zhang, L.D., and Ye, C.H.

Subjects
Molecular sieves -- Research, Photoluminescence -- Research, Physics
Abstract

A new study investigates the optical properties of mesoporous silica molecular sieves.

Published
2000

48. Growth and microstructural characterizations of GaN films grown by laser induced reactive epitaxy.

Author

Zhou, H., Rupp, T., Phillipp, F., Henn, G., Gross, M., Rhm, A., and Schröder, H.

Subjects
GALLIUM nitride, MICROSTRUCTURE, EPITAXY
Abstract

Hexagonal GaN thin films have been grown by laser induced reactive epitaxy (LIRE) and characterized by various techniques. The films were deposited on sapphire (0001) and SiC (0001) without and with a buffer layer. Dislocations with predominant edge type and inversion domains were observed in the films. Dislocation density measured by x-ray diffraction is in fair agreement with that measured by transmission electron microscopy. Studies on the polarity of films indicate that Ga polarity was obtained for the films grown on SiC, while the films grown directly on sapphire were of N polarity. The atomic structure with a displacement of c/8 across the inversion domain boundary was deduced from the fringe contrast analyses and high resolution transmission electron microscopy studies. For the films grown on sapphire, the Ga polarity was achieved by using an AlGaN prelayer coupled with the introduction of low-temperature GaN buffer layer, which led to a clear improvement of the film quality. The typical cathodoluminescence spectra of such GaN films are comparable to those reported in the literature. The present work provides insight into the crystal growth and microstructure of GaN films and indicates that LIRE is a promising method to grow high quality GaN films. [ABSTRACT FROM AUTHOR]

Published
2003
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49. Strain distribution in self-assembled InP/GaInP quantum dots.

Author

Jin-Phillipp, N.Y. and Phillipp, F.

Subjects
*QUANTUM dots, *ELECTRON microscopy
Abstract

Reports that local strain on an atomic scale, as well as the size and the shape of InP quantum dots embedded in GaInP have been measured directly from high-resolution electron microscopy images. Morphology of InP quantum dots; Strain distribution in the layer structures.

Published
2000
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