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A new approach for the growth of vertical 2D van‐der‐Waals heterostructures is reported: Using metal‐organic molecular beam epitaxy (MOMBE), aspects of chemical and physical vapor deposition are combined to grow ultrathin films of WX2 (X = Se, S) on epitaxial graphene on SiC(0001). Thorough investigation of the films using a variety of spectroscopy, diffraction, and microscopy techniques reveals an island‐like growth of predominantly mono‐ and bilayer regions with crystallite size up to 300 nm, which show a preferred epitaxial alignment with the graphene substrate. Angle‐resolved photoemission reveals a well‐developed band structure of the heterostructure, with the growth process showing minimal effect on the electronic structure of the graphene sheet.

Abstract Sulfur intercalation of a carbon rich (63×63)R30∘ reconstruction on silicon carbide, also known as buffer layer, is reported. In a two‐zone furnace a sulfur rich precursor is heated and the gaseous species is transported for intercalation by an argon flow to the sample. Successful intercalation can be confirmed by X‐ray photoelectron spectroscopy and low‐energy electron diffraction. Angle‐resolved photoelectron spectroscopy reveals a p‐type doping of the intercalated samples. In some cases only partial intercalation appears with non‐intercalated sulfur on top of the remaining buffer layer areas. Further annealing of such samples leads to a migration of the non‐intercalated sulfur under the buffer layer areas, indicating that the sulfur bonded to the buffer layer constitutes a transition state.

Abstract The synthesis of new graphene‐based quantum materials by intercalation is an auspicious approach. However, an accompanying proximity coupling depends crucially on the structural details of the new heterostructure. It is studied in detail the Pb monolayer structure after intercalation into the graphene buffer layer on the SiC(0001) interface by means of photoelectron spectroscopy, x‐ray standing waves, and scanning tunneling microscopy. A coherent fraction close to unity proves the formation of a flat Pb monolayer on the SiC surface. An interlayer distance of 3.67 Å to the suspended graphene underlines the formation of a truly van der Waals heterostructure. The 2D Pb layer reveals a quasi ten‐fold periodicity due to the formation of a grain boundary network, ensuring the saturation of the Si surface bonds. Moreover, the densely‐packed Pb layer also efficiently minimizes the doping influence by the SiC substrate, both from the surface dangling bonds and the SiC surface polarization, giving rise to charge‐neutral monolayer graphene. The observation of a long‐ranged (3×3) reconstruction on the graphene lattice at tunneling conditions close to Fermi energy is most likely a result of a nesting condition to be perfectly fulfilled.

The intercalation of graphene with suitable atomic species is one of the most frequently applied methods to decouple the graphene layer from the substrate in order to establish the classical electronic properties of graphene. In this context, we studied the bismuth (Bi) intercalation of the $\left(6\sqrt{3}\times6\sqrt{3}\right)R30^\circ$ reconstructed so-called ‘zeroth layer graphene’ on SiC $\left(0001\right)$ . As reported earlier by Sohn et al (2021 J. Korean Phys. Soc. 78 157) two phases are formed depending on the amount of intercalated Bi, which in turn is controlled by the annealing temperature: The α phase, showing a $(1\times1)$ periodicity with respect to the substrate, and, at higher temperatures, the $(\sqrt{3}\times\sqrt{3})$ reconstructed β phase. We characterise both phases and the transformation from the α to the β phase by photoelectron spectroscopy, normal incidence x-ray standing waves, electron diffraction and electron microscopy. We clearly see an almost complete intercalation of the graphene layers in both phases, with strong (covalent) interaction between the topmost Si atoms of the substrate and the Bi intercalant, but only weak (van der Waals) interaction between Bi and the graphene layer. The n-doping of the graphene found for the α phase decreases continuously during the phase transformation, in agreement with a reduced density of the Bi intercalating layer. Missing core level shifts of the surface species as well as the normal incidence x-ray standing waves results indicate that all surface Si atoms remain saturated during the transition and no dangling bonds are formed. Low energy electron microscopy and diffraction reveal the coexistance of both phases after annealing to intermediate temperatures and allow a quantitative analysis of island sizes and numbers.

Measurement of charge transport in epitaxial graphene is challenging. Here, the authors quantitatively investigate local transport properties of graphene prepared by polymer assisted sublimation growth using scanning tunneling potentiometry and report local sheet resistances with a variation of up to 270% at low temperatures.