507 results on '"Pezoldt J"'
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2. Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC
3. Impurity Effects on Nucleation and Growth of SiC Clusters and Layers on Si(100) and Si(111)
4. Comprehensive (S)TEM characterization of polycrystalline GaN/AlN layers grown on LTCC substrates
5. Gate-tunable hysteresis response of field effect transistor based on sulfurized Mo
6. High Quality Graphene Grown by Sublimation on 4H-SiC (0001)
7. Studies of buried (SiC)1-x(AlN)x layers formed by co-implantation of N+ and Al+ ions into 6H-SiC
8. Lattice Location Determination of Ge in SiC by ALCHEMI
9. Strain relaxation and void reduction in SiC on Si by Ge predeposition
10. Beta to alpha transition and defects on SiC on Si grown by CVD
11. Silicon Carbide - Graphene Nano-Gratings on 4H and 6H Semi-Insulating SiC
12. Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers
13. Graphene field effect transistor improvement by graphene–silicon dioxide interface modification
14. Strain modification in epitaxial 2H-AlN layers on 3C-SiC/Si(111) pseudo-substrates
15. AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications
16. Structural characterization of sputtered indium oxide films deposited at room temperature
17. Properties of surface and interface structure of AlN/3C–SiC/Ge/Si (1 1 1) heterostructure
18. Reconstruction of concentration profiles in heterostructures with chemically modified interfaces.
19. Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling
20. Study of Si and C adatoms and SiC clusters on the silicon surface by the molecular dynamics method
21. PECVD silicon carbide deposited at different temperature
22. Nanoelectromechanical devices for sensing applications
23. Advanced Thermal Processing of Semiconductor Materials by Flash Lamp Annealing
24. Carbon surface diffusion and SiC nanocluster self-ordering
25. Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometry
26. 5 μm thick 3C-SiC layers grown on Ge-modified Si(100) substrates
27. In Situ Spectroscopic Ellipsometry Studies of The Interaction Process of Ethene With Si Surfaces During Sic Formation
28. The influence of ion beam sputtering on the composition of the near-surface region of silicon carbide layers
29. Structural and local electronic properties of clean and Li-intercalated graphene on SiC(0001)
30. Transformation of the buffer layer grown on 4H-SiC to single-layer graphene by ex situ hydrogen intercalation
31. Thermal Wave Analysis: A Tool for Non-Invasive Testing in Ion Beam Synthesis of Wide Band Gap Materials
32. On the Entrance Effects and the Influence of Buoyancy Forces on the Fluid Flow in Rtp Reactors
33. Auger investigations of thin SiC films
34. Growth of three-dimensional SiC clusters on Si modelled by KMC
35. High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC
36. Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate
37. The transition from 2D to 3D nanoclusters of silicon carbide on silicon
38. Cubic InN on [formula omitted]-plane sapphire
39. Self-organized SiC nanostructures on silicon
40. Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On and Normally Off Operation
41. Theoretical description of high-temperature implantation of silicon carbide with N+ and Al+ ions
42. Critical island size of the SiC formation on Si(1 0 0) and Si(1 1 1)
43. Characterization of SiC grown on Ge modified silicon substrates
44. Structural and Elasticity-based Properties of SiC-based Interfaces: their Relevance to the Heteroepitaxy of III–V Nitrides
45. Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics
46. Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics
47. On the Role of Foreign Atoms in the Optimization of 3C-SiC/Si Heterointerfaces
48. (AlN) x(SiC) 1− x buried layers implanted in 6H–SiC: a theoretical study of their optimized composition
49. Electrical characterization of SiC/Si heterostructures with Ge-modified interfaces
50. Carbon-induced reconstructions on Si(111) investigated by RHEED and molecular dynamics
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